公开(公告)号：KR1020000061888A

公开(公告)日：2000-10-25

申请号：KR1019990011269

申请日：1999-03-31

Applicant: 삼성전자주식회사

Inventor： 강성규 ,  이기방 ,  최재준 ,  정희문

IPC: H01L21/768

CPC classification number: G01P15/0802 ,  B81C1/0019 ,  B81C1/00507 ,  B81C2201/0115 ,  H01L21/76251 ,  H01L21/76262

Abstract: PURPOSE: A multilayer wafer is to form a porous silicon or a porous oxidized silicon as a sacrifice layer, thereby securing an enough space between a substrate and a depending structure. CONSTITUTION: A method of a multilayer wafer comprises steps of: preparing a doped p¬+ and n¬+ wafer as a substrate wafer(1); forming a porous silicon layer by a predetermined thickness on a surface of the wafer by an anode reaction; making an oxidized a porous silicon layer(3) by oxidizing the porous silicon layer using a thermal oxidation process; depositing a poly silicon seed layer on the porous oxidized silicon layer using a method of chemical vapor deposition; growing an epitaxial poly-silicon layer on the porous oxidized silicon layer using the poly-silicon seed layer. Because a porosity of silicon is varied upon a concentration and a current density of a fluoric acid, if the porosity is set to 55%, the porous oxidized silicon layer can be grown without a transformation of the wafer by a volumetric expansion, thereby solving a problem for an air resistance and sticking.

Abstract translation: 目的：多层晶片将形成多孔硅或多孔氧化硅作为牺牲层，由此确保基板和悬垂结构之间的足够空间。 构成：多层晶片的方法包括以下步骤：制备掺杂的p +和n +晶片作为衬底晶片（1）; 通过阳极反应在所述晶片的表面上形成预定厚度的多孔硅层; 通过使用热氧化法氧化多孔硅层，使氧化的多孔硅层（3） 使用化学气相沉积的方法在多孔氧化硅层上沉积多晶种子层; 使用多晶硅种子层在多孔氧化硅层上生长外延多晶硅层。 由于硅的孔隙率根据氟酸的浓度和电流密度而变化，所以如果将孔隙率设定为55％，则可以在不通过体积膨胀使晶片转变的情况下生长多孔氧化硅层，从而求解 空气阻力和粘附问题。

公开(公告)号：KR1020000050473A

公开(公告)日：2000-08-05

申请号：KR1019990000387

申请日：1999-01-11

Applicant: 삼성전자주식회사

Inventor： 이기방 ,  최재준 ,  정희문 ,  김규용 ,  강성규

IPC: G01P15/08

CPC classification number: H02N1/008 ,  B81B3/0094 ,  B81B2201/025 ,  B81B2203/0136 ,  G01C19/5755 ,  G01P15/097 ,  G01P15/125 ,  G01P2015/0814

Abstract: PURPOSE: A three-dimensional comb structure is provided to increase an electrostatic force through the increase of the number of combs per a unit area by manufacturing combs in vertical directions on a suspension structure and a substrate. CONSTITUTION: A suspension structure(42) is floated while maintaining a certain gap with a substrate to sense inertia movements and to be oscillated on the substrate. At least one or more elastic members(44) are connected to the suspension structure(42) in order to enable the suspension structure(42) to be oscillated. At least one or more supporters(45) are connected to the substrate to support the elastic members(44). A moving comb structure(43) is connected to the suspending structure(42) and has at least one comb formed to be protruded.

Abstract translation: 目的：提供一种三维梳状结构，通过在悬挂结构和基底上垂直方向制造梳子，通过增加每单位面积的梳子数来增加静电力。 构成：悬挂结构（42）浮动，同时与衬底保持一定的间隙以感测惯性运动并且在衬底上振荡。 至少一个或多个弹性构件（44）连接到悬架结构（42），以使得悬挂结构（42）能够摆动。 至少一个或多个支撑件（45）连接到基板以支撑弹性构件（44）。 移动梳结构（43）连接到悬挂结构（42）上并具有形成为突出的至少一个梳子。