公开(公告)号：KR1020050050351A

公开(公告)日：2005-05-31

申请号：KR1020030084065

申请日：2003-11-25

Applicant: 제일모직주식회사

Inventor： 노현수 ,  박태원 ,  이길성 ,  이인경

IPC: C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/02024

Abstract: 본 발명은 실리콘 웨이퍼 연마용 슬러리 및 이를 이용한 경면연마 방법에 관한 것으로, 보다 상세하게는 평균 입경이 10-200nm인 콜로이드 실리카, 폴리피롤리돈 공중합체, TMAH, pH 조절제 및 탈이온수를 포함하는 실리콘 웨이퍼 연마용 슬러리 및 상기 연마용 슬러리를 2차 연마 단계에서 사용하는 것을 특징으로 하는 다단계 경면연마 방법에 관한 것이다. 본 발명에 따른 연마용 슬러리를 사용하여 경면연마 공정을 수행하면 미크론 단위 이하의 LPD(submicron LPD)가 크게 감소되는 효과를 제공할 수 있다.

公开(公告)号：KR100459101B1

公开(公告)日：2004-12-03

申请号：KR1020020028052

申请日：2002-05-21

Applicant: 삼성전자주식회사 ,  제일모직주식회사

Inventor： 이재석 ,  도원중 ,  노현수 ,  이길성 ,  이종원 ,  윤보언 ,  하상록 ,  박준상 ,  홍창기

IPC: H01L21/304

Abstract: PURPOSE: A slurry composition for chemical mechanical polishing of metal wiring is provided to improve a polishing rate and planarization as well as distribution stability and polishing repeatability by adding a propylene diamine tetra acetate(PDTA)-metal complex and carboxyl acid to a slurry composition for polishing nonspecific metal layer using a small quantity of peroxide and inorganic acid. CONSTITUTION: The CMP slurry composition for the metal wiring includes a PDTA-metal complex, carboxyl acid, metal oxide powder and deionized water wherein bonding energy of peroxide, inorganic acid, metal atoms and oxygen atoms is less than that of O and W. The peroxide is 0.5-5 weight percent. The inorganic acid is 0.001-5.0 weight percent. The PDTA-metal complex is 0.001-0.5 weight percent. The carboxyl acid is 0.1-10 weight percent. The metal oxide powder is 0.1-10 weight percent. The rest of the CMP slurry composition is deionized water.

Abstract translation: 目的：通过将丙二胺四乙酸酯（PDTA） - 金属配合物和羧酸加入到用于金属配线的浆料组合物中以提高抛光速率和平面化以及分配稳定性和抛光重复性，提供用于金属配线的化学机械抛光的浆料组合物 使用少量过氧化物和无机酸抛光非特异性金属层。 构成：用于金属布线的CMP浆料组合物包括PDTA-金属络合物，羧酸，金属氧化物粉末和去离子水，其中过氧化物，无机酸，金属原子和氧原子的键能小于O和W. 过氧化物为0.5-5重量％。 无机酸为0.001-5.0重量％。 PDTA-金属络合物为0.001-0.5重量％。 羧酸为0.1-10重量％。 金属氧化物粉末为0.1-10重量％。 CMP浆料组合物的其余部分是去离子水。

公开(公告)号：KR1020040060613A

公开(公告)日：2004-07-06

申请号：KR1020020087423

申请日：2002-12-30

Applicant: 제일모직주식회사

Inventor： 도원중 ,  이길성 ,  이인경 ,  이재석 ,  노현수 ,  정재훈

IPC: C09K3/14

CPC classification number: C09G1/02 ,  C01P2004/64 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/3212 ,  Y10S977/775 ,  Y10S977/888

Abstract: PURPOSE: A slurry composition for copper wire polishing is provided to improve selection ratio and to reduce erosion and dishing due to overpolishing. CONSTITUTION: The slurry composition comprises 1-15 wt% of a polishing agent; 0.1-10 wt% of an oxidizing agent; 0.05-0.5 wt% of a dispersant; 0.01-0.5 wt% of a chelating agent; 0.01-0.5 wt% of an inhibitor; 0.01-0.5 wt% of a complexing agent which is at least one selected from the group consisting of polyethylene glycol, methyl cellulose and poly(acrylic acid); and the balance of deionized water. Preferably the complexing agent has a weight average molecular weight of 500-10,000; the polishing agent is silica, alumina, ceria or titania having an average particle size of 200 nm or less; the oxidizing agent is at least one selected from the group consisting of hydrogen peroxide, potassium periodate, potassium persulfate and potassium ferricyanide; the dispersant is at least one selected from the group consisting of acetic acid, formamide, propionic acid and malonic acid; the chelating agent is at least one selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium formate, ammonium tartrate, ammonium lactate, ammonium tetrahydrate, aminobenzotriazole, aminobutyric acid, aminoethyl aminoethanol and aminopyridine; and the inhibitor is at least one selected from the group consisting of benzotriazole, benzoquinone, benzylbutyl phthalate and benzyl dioxolane.

Abstract translation: 目的：提供用于铜线抛光的浆料组合物，以提高选择比，并减少由于过度抛光引起的侵蚀和凹陷。 构成：浆料组合物包含1-15重量％的抛光剂; 0.1-10重量％的氧化剂; 0.05-0.5重量％的分散剂; 0.01-0.5重量％的螯合剂; 0.01-0.5重量％的抑制剂; 0.01-0.5重量％的选自聚乙二醇，甲基纤维素和聚（丙烯酸）中的至少一种的络合剂; 和去离子水的平衡。 络合剂优选具有500-10,000的重均分子量; 抛光剂是平均粒径为200nm以下的二氧化硅，氧化铝，二氧化铈或二氧化钛; 氧化剂是选自过氧化氢，高碘酸钾，过硫酸钾和铁氰化钾中的至少一种; 分散剂是选自乙酸，甲酰胺，丙酸和丙二酸中的至少一种; 螯合剂为选自乙酸铵，草酸铵，甲酸铵，酒石酸铵，乳酸铵，四水合四铵，氨基苯并三唑，氨基丁酸，氨基乙基氨基乙醇和氨基吡啶中的至少一种。 并且所述抑制剂为选自苯并三唑，苯醌，邻苯二甲酸苄基丁酯和苄基二氧戊环中的至少一种。

公开(公告)号：KR1020040050726A

公开(公告)日：2004-06-17

申请号：KR1020020077860

申请日：2002-12-09

Applicant: 제일모직주식회사

Inventor： 노현수 ,  박태원 ,  이길성 ,  이인경

IPC: H01L21/304

CPC classification number: H01L21/30625 ,  C09G1/02

Abstract: PURPOSE: A slurry composition for final polishing of silicon wafer is provided to be capable of improving dispersion characteristic of the slurry composition and reducing the concentration of the slurry composition. CONSTITUTION: A slurry composition for final polishing of silicon wafer contains colloid silica of 2-10 weight% as an abrasive, ammonia of 0.5-1.5 weight%, and a hydroxide alkyl cellulose based water-soluble thickener of 0.2-1.0 weight%. At this time, the grain diameter of the colloid silica is in the range of 30-80 nm. The last polishing slurry composition further contains a polyoxyethylenealkylamine ether based non-ionic surfactant of 0.03-0.5 weight%, quaternary ammonium salt of 0.01-1.0 weight%, and deionized water.

Abstract translation: 目的：提供用于硅晶片的最终抛光的浆料组合物，以能够改善浆料组合物的分散特性并降低浆料组合物的浓度。 构成：用于硅晶片的最终研磨的浆料组合物含有2-10重量％的研磨剂胶体二氧化硅，0.5-1.5重量％的氨和0.2-1.0重量％的氢氧化烷基纤维素基水溶性增稠剂。 此时，胶体二氧化硅的粒径在30-80nm的范围内。 最后抛光浆料组合物还含有0.03-0.5重量％的聚氧乙烯烷基胺醚非离子表面活性剂，0.01-1.0重量％的季铵盐和去离子水。

公开(公告)号：KR100425261B1

公开(公告)日：2004-03-30

申请号：KR1020010033258

申请日：2001-06-13

Applicant: 제일모직주식회사

Inventor： 이재석 ,  도원중 ,  노현수 ,  이길성

IPC: C09K3/14

Abstract: 본 발명은 반도체 소자의 금속층 연마용 슬러리에 관한 것으로, 보다 상세하게는 금속산화물 미분말, 질산망간, 과산화수소, 폴리아크릴산, 및 탈이온수를 포함하는 반도체 소자의 금속층 연마용 고순도 슬러리에 관한 것이며, 본 발명의 연마용 슬러리를 사용하면 CMP 공정시 높은 연마속도를 유지하면서도 금속 또는 금속이온으로 인한 결함을 예방할 수 있으며, 슬러리의 장기저장이 가능하다.

公开(公告)号：KR100386396B1

公开(公告)日：2003-06-09

申请号：KR1020010047502

申请日：2001-08-07

Applicant: 제일모직주식회사

Inventor： 이길성 ,  이재석 ,  노현수 ,  도원중 ,  김천일 ,  강경문 ,  이동준 ,  김남수 ,  임영삼

IPC: H01L21/302

Abstract: PURPOSE: A method for fabricating metal oxide slurry for CMP to reduce the amount of defect is provided to improve defects by controlling sintered diamond used as a raw material of an orifice. CONSTITUTION: A premixer(1) is used for mixing metal oxide with deionized to form a metal oxide slurry of predetermined density. The metal oxide slurry is injected into an orifice of a distribution chamber(3) by using an intensifier pump(2). The metal oxide slurry is dispersed in the inside of the distribution chamber(3). The chamber is formed with a sintered diamond instead of engineering plastic, tempered glass plastic, carbon steel, SUS, and ceramic. The sintered diamond is fabricated by using a compact shape. A diameter of particles of the diamond compact is about 15 micro meter. The diamond compact is fabricated by using particles of Co.

Abstract translation: 目的：提供一种制造用于CMP的金属氧化物浆料以减少缺陷量的方法，以通过控制用作孔的原材料的烧结金刚石来改善缺陷。 组成：预混器（1）用于将金属氧化物与去离子水混合以形成预定密度的金属氧化物浆料。 通过增强泵（2）将金属氧化物浆料注入分配室（3）的孔口中。 金属氧化物浆料分散在分配室（3）的内部。 该室由烧结金刚石代替工程塑料，钢化玻璃塑料，碳钢，SUS和陶瓷形成。 烧结金刚石通过使用紧凑的形状来制造。 金刚石复合片颗粒的直径约为15微米。 该金刚石复合片通过使用Co.的颗粒

公开(公告)号：KR100374724B1

公开(公告)日：2003-03-04

申请号：KR1020000075810

申请日：2000-12-13

Applicant: 제일모직주식회사

Inventor： 이재석 ,  이길성 ,  김석진 ,  노현수

IPC: H01L21/304

Abstract: PURPOSE: A slurry for polishing metal layers of semiconductor devices is provided to restrain decomposition of hydrogen peroxide by adding some 2-phosphonobutan-1,2,4-tricarboxylic acid. CONSTITUTION: A slurry for polishing metal layers of semiconductor devices is composed of a polishing agent having in the range of 0.10-10.00 weight%, an oxygenated water having in the range of 1.00-3.00 weight%, a ferrous nitrate having in the range of 0.03-0.10 weight%, a 2-phosphonobutan-1,2,4-tricarboxylic acid having in the range of 0.001-0.01 weight%, a pH controlling agent having in the range of 0.05-0.20 weight%, and a deionized water having in the range of 87.00-95.00 weight%.

Abstract translation: 目的：提供用于抛光半导体器件金属层的浆料以通过添加一些2-膦酰基丁烷-1,2,4-三羧酸来抑制过氧化氢的分解。 一种用于抛光半导体器件金属层的抛光液，其特征在于：抛光剂含有0.10-10.00重量％的范围内的抛光剂，1.00-3.00重量％的含氧水， 0.03-0.10重量％的2-膦酰基丁烷-1,2,4-三羧酸，0.001-0.01重量％的2-膦酰基丁烷-1,2,4-三羧酸，0.05-0.20重量％的pH控制剂和去离子水， 在87.00-95.00重量％的范围内。

公开(公告)号：KR1020030014338A

公开(公告)日：2003-02-17

申请号：KR1020020028052

申请日：2002-05-21

Applicant: 삼성전자주식회사 ,  제일모직주식회사

Inventor： 이재석 ,  도원중 ,  노현수 ,  이길성 ,  이종원 ,  윤보언 ,  하상록 ,  박준상 ,  홍창기

IPC: H01L21/304

Abstract: PURPOSE: A slurry composition for chemical mechanical polishing of metal wiring is provided to improve a polishing rate and planarization as well as distribution stability and polishing repeatability by adding a propylene diamine tetra acetate(PDTA)-metal complex and carboxyl acid to a slurry composition for polishing nonspecific metal layer using a small quantity of peroxide and inorganic acid. CONSTITUTION: The CMP slurry composition for the metal wiring includes a PDTA-metal complex, carboxyl acid, metal oxide powder and deionized water wherein bonding energy of peroxide, inorganic acid, metal atoms and oxygen atoms is less than that of O and W. The peroxide is 0.5-5 weight percent. The inorganic acid is 0.001-5.0 weight percent. The PDTA-metal complex is 0.001-0.5 weight percent. The carboxyl acid is 0.1-10 weight percent. The metal oxide powder is 0.1-10 weight percent. The rest of the CMP slurry composition is deionized water.

Abstract translation: 目的：提供金属配线的化学机械抛光用浆料组合物，通过向丙烯二胺四乙酸盐（PDTA） - 金属络合物和羧酸加入到浆料组合物中以提高抛光速率和平面化，以及分布稳定性和抛光重复性 使用少量的过氧化物和无机酸抛光非特异性金属层。 构成：金属布线的CMP浆料组合物包括PDTA-金属络合物，羧酸，金属氧化物粉末和去离子水，其中过氧化物，无机酸，金属原子和氧原子的结合能小于O和W的结合能。 过氧化物为0.5-5重量％。 无机酸为0.001-5.0重量％。 PDTA-金属络合物为0.001-0.5重量％。 羧酸为0.1-10重量％。 金属氧化物粉末为0.1-10重量％。 CMP浆料组合物的其余部分是去离子水。

公开(公告)号：KR1020030013160A

公开(公告)日：2003-02-14

申请号：KR1020010047500

申请日：2001-08-07

Applicant: 제일모직주식회사

Inventor： 이재석 ,  이길성 ,  노현수 ,  도원중

IPC: C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1463 ,  C23F3/00 ,  H01L21/3212

Abstract: PURPOSE: Provided is a CMP(chemical mechanical polishing) slurry for polishing copper wires, which can prevent dishing and erosion caused by the porosity and low strength of a cooper oxide layer and can keep high polishing-velocity. CONSTITUTION: The CMP slurry contains: 0.01-0.5wt% of an amine compound being at least one selected from ethyl maleimide, ethyl hexyl amine, and salts thereof; 0.01-0.5wt% of an ester compound being at least one selected from ethyl bromo isobutyrate, ethyl bromo methyl propionate, diacetoxy pentane, and salts thereof; 0.01-0.5wt% of a sulfone compound being at least one selected from toluene sulfonyl hydrazine, toluene sulfonyl isocyanate, toluene sulfonamide, sulfonyl urea, and etc.; 1-5wt% of a peroxide being at least one selected from hydrogen peroxide, potassium periodate, potassium persulfate, and salts thereof; 1-15wt% of metal oxide fine powder being at least one selected from silica(SiO2), alumina(Al2O3), ceria(CeO2), and titania(TiO2); the balance being deionized water.

Abstract translation: 目的：提供一种用于抛光铜线的CMP（化学机械抛光）浆料，其可以防止由孔隙率引起的凹陷和侵蚀，并且能够保持高的抛光速度。 构成：CMP浆料含有：0.01-0.5重量％的选自乙基马来酰亚胺，乙基己胺及其盐中的至少一种的胺化合物; 0.01-0.5重量％的选自溴代异丁酸乙酯，溴甲基丙酸乙酯，二乙酰氧基戊烷和其盐中的至少一种的酯化合物; 0.01-0.5重量％的选自甲苯磺酰肼，甲苯磺酰异氰酸酯，甲苯磺酰胺，磺酰脲等中的至少一种的砜化合物; 1-5wt％的过氧化物是选自过氧化氢，高碘酸钾，过硫酸钾及其盐中的至少一种; 1-15重量％的选自二氧化硅（SiO 2），氧化铝（Al 2 O 3），二氧化铈（CeO 2）和二氧化钛（TiO 2）中的至少一种的金属氧化物细粉末。 余量为去离子水。

公开(公告)号：KR1020030001719A

公开(公告)日：2003-01-08

申请号：KR1020010037062

申请日：2001-06-27

Applicant: 제일모직주식회사

Inventor： 도원중 ,  이재석 ,  노현수 ,  이길성

IPC: H01L21/304

Abstract: PURPOSE: A CMP(Chemical Mechanical Polishing) slurry for polishing a metal wire of a semiconductor device is provided to minimize contents of metal or metal ions of the slurry by using iron oxide compound and hydrogen peroxide as oxidizer. CONSTITUTION: A CMP slurry is fabricated by metal oxide powders, iron oxide compound, hydrogen peroxide, 4-methyl salicylic acid, and deionized water. The metal oxide powders have weight percent of 1.0 to 15. The iron oxide compound has weight percent of 0.001 to 0.05. The hydrogen peroxide has weight percent of 1 to 4. The 4-methyl salicylic acid has weight percent of 0.001 to 0.01. The metal oxide powders are used as an abrasive. The metal oxide powders are formed with one or more material selected from a group including SiO2, Al2O3, CeO2, and TiO2. In addition, the CMP slurry has nitric acid or acetic acid of 0.03 to 0.1 weight percent. The slurry further comprises citric acid of 1 to 5 weight percent.

Abstract translation: 目的：提供一种用于抛光半导体器件的金属线的CMP（化学机械抛光）浆料，以通过使用氧化铁化合物和过氧化氢作为氧化剂来最小化浆料中金属或金属离子的含量。 构成：CMP浆料由金属氧化物粉末，氧化铁化合物，过氧化氢，4-甲基水杨酸和去离子水制成。 金属氧化物粉末的重量百分比为1.0〜15。氧化铁化合物的重量百分比为0.001〜0.05。 过氧化氢的重量百分比为1〜4。4-甲基水杨酸的重量百分比为0.001〜0.01。 金属氧化物粉末用作研磨剂。 金属氧化物粉末由选自包括SiO 2，Al 2 O 3，CeO 2和TiO 2的一种或多种材料形成。 此外，CMP浆料具有0.03至0.1重量％的硝酸或乙酸。 该浆料还包含1至5重量％的柠檬酸。