公开(公告)号：US20220403497A1

公开(公告)日：2022-12-22

申请号：US17893223

申请日：2022-08-23

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu

IPC: C23C14/00 ,  C23C14/54 ,  C23C14/34

Abstract: There is disclosed apparatus and processes for the uniform controlled growth of materials on a substrate which direct a plurality of pulsed flows of a precursor into a reaction space of a reactor to deposit the thin film on the substrate. Each pulsed flow is a combination of a first pulsed subflow and a second pulsed subflow, wherein a pulse profile of the second pulsed subflow overlaps at least a portion of a latter half of a pulse profile of the first pulsed subflow.

公开(公告)号：US11230770B2

公开(公告)日：2022-01-25

申请号：US16881885

申请日：2020-05-22

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20210358721A1

公开(公告)日：2021-11-18

申请号：US17385997

申请日：2021-07-27

Applicant: ASM IP Holding B.V.

Inventor： Tom Blomberg ,  Varun Sharma ,  Chiyu Zhu

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687

Abstract: A reactor for processing substrates and methods for manufacturing and using the reactor are disclosed. Specifically, the reactor can include a material that forms gas compounds. The gas compounds are then easily removed from the reactor, thus reducing or avoiding contamination of the substrates in the reactor that would otherwise arise.

公开(公告)号：US11094582B2

公开(公告)日：2021-08-17

申请号：US16685787

申请日：2019-11-15

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu

IPC: H01L21/76 ,  H01L21/768 ,  H01L21/02

Abstract: A method for depositing a film to form an air gap within a semiconductor device is disclosed. An exemplary method comprises pulsing a metal halide precursor onto the substrate and pulsing an oxygen precursor onto a selective deposition surface. The method can be used to form an air gap to, for example, reduce a parasitic resistance of the semiconductor device.

公开(公告)号：US20210233772A1

公开(公告)日：2021-07-29

申请号：US16337301

申请日：2019-02-07

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Henri Jussila ,  Qi Xie

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  H01L21/768

Abstract: There is provided a method of selectively depositing a material on a substrate with a first and second surface, the first surface being different than the second surface. The depositing of the material on the substrate comprises: supplying a bulk precursor comprising metal atoms, halogen atoms and at least one additional atom not being a metal or halogen atom to the substrate; and supplying a reactant to the substrate. The bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface.

公开(公告)号：US20210151352A1

公开(公告)日：2021-05-20

申请号：US17151435

申请日：2021-01-18

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Kiran Shrestha ,  Shankar Swaminathan ,  Chiyu Zhu ,  Henri Tuomas Antero Jussila ,  Qi Xie

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/14 ,  C23C16/02 ,  H01L23/532 ,  C23C16/04 ,  C23C16/455

Abstract: Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.

公开(公告)号：US10903113B2

公开(公告)日：2021-01-26

申请号：US16773064

申请日：2020-01-27

Applicant: ASM IP Holding B.V.

Inventor： Han Wang ,  Qi Xie ,  Delphine Longrie ,  Jan Willem Maes ,  David de Roest ,  Julian Hsieh ,  Chiyu Zhu ,  Timo Asikainen ,  Krzysztof Kachel ,  Harald Profijt

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L23/532 ,  C23C16/455 ,  C23C16/04 ,  C23C16/34 ,  C23C16/56 ,  C23C16/00

Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.

公开(公告)号：US10851456B2

公开(公告)日：2020-12-01

申请号：US16258187

申请日：2019-01-25

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Suvi Haukka

IPC: C23C16/38 ,  C23C16/455

Abstract: A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane precursor onto the substrate. A reaction between the metal halide precursor and the decaborane precursor forms a metal film, specifically a metal boride.

公开(公告)号：US20200308709A1

公开(公告)日：2020-10-01

申请号：US16881718

申请日：2020-05-22

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi P. Haukka ,  Marko J. Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20200263297A1

公开(公告)日：2020-08-20

申请号：US16748299

申请日：2020-01-21

Applicant: ASM IP Holding B.V.

Inventor： Henri Jussila ,  Chiyu Zhu ,  Qi Xie ,  Jiyeon Kim ,  Tom E. Blomberg

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/34 ,  C23C16/40

Abstract: Vapor deposition processes such as atomic layer deposition (ALD) processes employing a deposition enhancing precursor can be used to form a variety of oxide and nitride films, including metal oxide, metal nitride, metal oxynitride, silicon oxide and silicon nitride films. For example, the methods can be used to deposit transition metal nitrides, transition metal oxides, and silicon oxides and nitrides. In some embodiments the deposition enhancing precursor comprises a Group II metal such as Mg, Sr, Ba or Ca. Atomic layer deposition processes may comprise a deposition cycle comprising a first sub-cycle in which a substrate is contacted with a deposition enhancing precursor and an oxygen or nitrogen reactant and a second sub-cycle in which the substrate is contacted with a metal or silicon precursor and an oxygen or nitrogen reactant. In some embodiments the methods advantageously enable improved thin film formation, for example increased deposition rates.