公开(公告)号：US20240222110A1

公开(公告)日：2024-07-04

申请号：US18395907

申请日：2023-12-26

Applicant: ASM IP Holding B.V.

Inventor： Tommi Tynell ,  Viljami J. Pore

IPC: H01L21/02 ,  H01J37/302 ,  H01J37/32

CPC classification number: H01L21/02274 ,  H01J37/3023 ,  H01J37/32357

Abstract: The present disclosure relates to methods and systems for forming a film using atomic layer deposition (ALD). More particularly, the disclosed methods and systems utilize a remote low-power plasma to partially breakdown a chemical precursor to form a radicalized precursor which more efficiently chemisorbs onto the surface of a substrate. A second reactant is introduced to convert the chemisorb layer into the desired film.

公开(公告)号：US11804373B2

公开(公告)日：2023-10-31

申请号：US17934817

申请日：2022-09-23

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Viljami J. Pore

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/3105 ,  C23C16/40

CPC classification number: H01L21/0228 ,  C23C16/40 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31058

Abstract: Methods and systems for selectively depositing dielectric films on a first surface of a substrate relative to a passivation layer previously deposited on a second surface are provided. The methods can include at least one cyclical deposition process used to deposit material on the first surface while the passivation layer is removed, thereby preventing deposition over the passivation layer.

公开(公告)号：US20230343601A1

公开(公告)日：2023-10-26

申请号：US18340261

申请日：2023-06-23

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/32 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/768

CPC classification number: H01L21/31144 ,  H01L21/02186 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/02178 ,  H01L21/32 ,  C23C16/04 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02118 ,  H01L21/0228 ,  H01L21/31138 ,  H01L21/76834

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US11728175B2

公开(公告)日：2023-08-15

申请号：US17130902

申请日：2020-12-22

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/32 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/768

CPC classification number: H01L21/31144 ,  C23C16/04 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/02118 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0337 ,  H01L21/31138 ,  H01L21/32 ,  H01L21/32139 ,  H01L21/76834

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US11562900B2

公开(公告)日：2023-01-24

申请号：US16811258

申请日：2020-03-06

Applicant: ASM IP Holding B.V.

Inventor： Toshiya Suzuki ,  Viljami J. Pore ,  Hannu Huotari

IPC: C23C16/32 ,  H01L21/02 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455

Abstract: Methods for depositing silicon oxycarbide (SiOC) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOC films having improved acid-based wet etch resistance.

公开(公告)号：US20230011277A1

公开(公告)日：2023-01-12

申请号：US17808741

申请日：2022-06-24

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma

IPC: H01L21/285 ,  C23C16/56 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/768 ,  B05D1/00 ,  C23C16/04 ,  C23C16/455

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.

公开(公告)号：US20220388031A1

公开(公告)日：2022-12-08

申请号：US17820180

申请日：2022-08-16

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami J. Pore ,  Marko Tuominen ,  Hannu Huotari

IPC: B05D1/00 ,  H01L51/00 ,  C23C16/455

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve.

公开(公告)号：US20220323991A1

公开(公告)日：2022-10-13

申请号：US17808384

申请日：2022-06-23

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami J. Pore ,  Marko Tuominen ,  Hannu Huotari

IPC: B05D1/00 ,  H01L21/02 ,  C23C16/30 ,  B05D1/36 ,  C23C16/455 ,  H01L21/67

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve. Deposition reactors conducive to depositing organic films are provided.

公开(公告)号：US20220076946A1

公开(公告)日：2022-03-10

申请号：US17401901

申请日：2021-08-13

Applicant: ASM IP Holding B.V.

Inventor： Toshiya Suzuki ,  Viljami J. Pore

IPC: H01L21/02 ,  H01L21/033

Abstract: Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.

公开(公告)号：US20200251330A1

公开(公告)日：2020-08-06

申请号：US16742079

申请日：2020-01-14

Applicant: ASM IP Holding B.V.

Inventor： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  C23C16/455 ,  H01L21/28 ,  H01L21/033

Abstract: A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.