MARK POSITION MEASURING APPARATUS AND METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
    71.
    发明申请
    MARK POSITION MEASURING APPARATUS AND METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 有权
    标记位置测量装置和方法,光刻装置和装置制造方法

    公开(公告)号:US20150234290A1

    公开(公告)日:2015-08-20

    申请号:US14428565

    申请日:2013-09-23

    CPC classification number: G03F7/70141 G01B11/14 G03F9/7069 G03F9/7088

    Abstract: An apparatus to measure the position of a mark, the apparatus including an illumination arrangement to direct radiation across a pupil of the apparatus, the illumination arrangement including an illumination source to provide multiple-wavelength radiation of substantially equal polarization and a wave plate to alter the polarization of the radiation in dependency of the wavelength, such that radiation of different polarization is supplied; an objective to direct radiation on the mark using the radiation supplied by the illumination arrangement while scanning the radiation across the mark in a scanning direction; a radiation processing element to process radiation that is diffracted by the mark and received by the objective; and a detection arrangement to detect variation in an intensity of radiation output by the radiation processing element during the scanning and to calculate from the detected variation a position of the mark in at least a first direction of measurement.

    Abstract translation: 一种用于测量标记位置的装置,该装置包括用于将辐射引导到装置的光瞳上的照明装置,所述照明装置包括照明源,以提供基本上相等偏振的多波长辐射和波片,以改变 依赖于波长的辐射的极化,使得提供不同极化的辐射; 使用由照射装置提供的辐射在扫描方向上扫描横过标记的辐射来将辐射引导到标记上的目的; 辐射处理元件,用于处理由所述标记衍射并由所述物镜接收的辐射; 以及检测装置,用于检测在扫描期间由辐射处理元件输出的辐射强度的变化,并且根据检测到的变化来计算至少第一测量方向上的标记的位置。

    METHOD AND APPARATUS FOR MEASURING ASYMMETRY OF A MICROSTRUCTURE, POSITION MEASURING METHOD, POSITION MEASURING APPARATUS, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
    72.
    发明申请
    METHOD AND APPARATUS FOR MEASURING ASYMMETRY OF A MICROSTRUCTURE, POSITION MEASURING METHOD, POSITION MEASURING APPARATUS, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 有权
    用于测量微结构不对称的方法和装置,位置测量方法,位置测量装置,平面设备和装置制造方法

    公开(公告)号:US20150227061A1

    公开(公告)日:2015-08-13

    申请号:US14427942

    申请日:2013-11-04

    CPC classification number: G03F9/7069 G03F9/7088

    Abstract: A lithographic apparatus includes a sensor, such as an alignment sensor including a self-referencing interferometer, configured to determine the position of an alignment target including a periodic structure. An illumination optical system focuses radiation of different colors and polarizations into a spot which scans the structure. Multiple position-dependent signals are detected and processed to obtain multiple candidate position measurements. Asymmetry of the structure is calculated by comparing the multiple position-dependent signals. The asymmetry measurement is used to improve accuracy of the position read by the sensor. Additional information on asymmetry may be obtained by an asymmetry sensor receiving a share of positive and negative orders of radiation diffracted by the periodic structure to produce a measurement of asymmetry in the periodic structure.

    Abstract translation: 光刻设备包括传感器,诸如包括自参考干涉仪的对准传感器,其被配置为确定包括周期性结构的对准目标的位置。 照明光学系统将不同颜色和偏振的辐射聚焦到扫描结构的光斑中。 检测并处理多个与位置相关的信号以获得多个候选位置测量。 通过比较多个位置相关信号来计算结构的不对称性。 不对称测量用于提高传感器读取位置的精度。 通过不对称传感器可以获得关于不对称性的附加信息,所述非对称传感器接收由周期性结构衍射的辐射的正和负数的一部分,以产生周期性结构中的不对称性的测量。

Patent Agency Ranking