公开(公告)号：US20080306808A1

公开(公告)日：2008-12-11

申请号：US11811175

申请日：2007-06-08

Applicant: Iqbal Adjali ,  Malcolm Benjamin Dias ,  Wael El-Deredy ,  Carmen Maria Sordo-Garcia ,  Ming Li ,  Paulo Jorge Gomes Lisboa

Inventor： Iqbal Adjali ,  Malcolm Benjamin Dias ,  Wael El-Deredy ,  Carmen Maria Sordo-Garcia ,  Ming Li ,  Paulo Jorge Gomes Lisboa

IPC: G06Q30/00

CPC classification number: G06Q30/02 ,  G06Q10/06375 ,  G06Q10/06395 ,  G06Q30/0203 ,  G06Q30/0204

Abstract: In an automated method for providing personalised recommendations to a user, a global probabilistic purchase model based on prior interactions of a group of users of a system, is used in the generation of personalised recommendations for future purchases for a given user. Attributes of the given user are used to identify characteristics relating to the user's personal purchasing, correction factors are calculated to update the output of the global probabilistic purchase model to personalise the recommendations for the user.

Abstract translation: 在用于向用户提供个性化建议的自动化方法中，基于系统的一组用户的先前交互的全局概率购买模型被用于为给定用户的将来购买生成个性化推荐。 给定用户的属性用于识别与用户个人购买相关的特征，计算校正因子以更新全局概率购买模型的输出以个性化用户的建议。

公开(公告)号：US20080305629A1

公开(公告)日：2008-12-11

申请号：US12195263

申请日：2008-08-20

Applicant: Shulin Wang ,  Ulrich Kroemer ,  Lee Luo ,  Aihua Chen ,  Ming Li

Inventor： Shulin Wang ,  Ulrich Kroemer ,  Lee Luo ,  Aihua Chen ,  Ming Li

IPC: H01L21/4763

CPC classification number: C23C16/45527 ,  C23C16/02 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/28061 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76841 ,  H01L27/10861 ,  H01L28/60 ,  H01L29/4941 ,  H01L29/66181

Abstract: In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 Å or less and tungsten nitride layer may have an electrical resistivity of about 380 μΩ-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.

Abstract translation: 在一个实施例中，提供了一种在衬底上形成钨阻挡材料的方法，其包括在气相沉积工艺期间在衬底上沉积钨层并将衬底依次暴露于钨前体和氮前体以形成氮化钨层 在钨层上。 一些实施例提供可以在原子层沉积工艺期间通过依次将基底暴露于钨前体和还原气体（例如乙硼烷或硅烷）来沉积钨层。 钨层的厚度可以为约或者更小，并且氮化钨层的电阻率可以为约380μΩ·cm以下。 其它实例提供了通过化学气相沉积工艺在钨氮化物层上沉积钨体层。

公开(公告)号：US20080150123A1

公开(公告)日：2008-06-26

申请号：US12044828

申请日：2008-03-07

Applicant: Ming Li ,  Sayeh Khalili ,  Donald R. Mullen

Inventor： Ming Li ,  Sayeh Khalili ,  Donald R. Mullen

IPC: H01L23/12

CPC classification number: H01L23/4985 ,  H01L23/49833 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2223/6688 ,  H01L2224/04042 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/07811 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05599

Abstract: The semiconductor package includes a rigid circuit board substrate having a substrate first side and an opposing substrate second side. The package also includes multiple electrical contacts coupled to the substrate at the substrate first side. An adhesive directly contacts the substrate second side. A semiconductor device directly contacts the adhesive. At least one flexible conductor is electrically connected to the semiconductor device and to at least one of the electrical contacts. The flexible conductor extends from the first side to the second side of the substrate.

Abstract translation: 半导体封装包括具有衬底第一侧和相对衬底第二侧的刚性电路板衬底。 封装还包括在衬底第一侧耦合到衬底的多个电触点。 粘合剂直接接触基板第二面。 半导体器件直接接触粘合剂。 至少一个柔性导体电连接到半导体器件和至少一个电触头。 柔性导体从衬底的第一侧延伸到第二侧。

公开(公告)号：US07376307B2

公开(公告)日：2008-05-20

申请号：US10976524

申请日：2004-10-29

Applicant: Rajminder Singh ,  Ming Li ,  Jimmy Yi-Jie Jia ,  Xinbing Liu ,  Tetsuo Ohara

Inventor： Rajminder Singh ,  Ming Li ,  Jimmy Yi-Jie Jia ,  Xinbing Liu ,  Tetsuo Ohara

IPC: G02B6/34

CPC classification number: G02B6/02095 ,  G02B6/02085 ,  G02B6/02147 ,  G02B2006/0209 ,  H01S5/12 ,  H01S5/141 ,  H01S5/4068

Abstract: A multimode long period fiber Bragg grating (LPFBG) for a predetermined wavelength band. The LPFBG formed of a non-photosensitive material having an initial index of refraction. The multimode optical fiber core includes a substantially cylindrical surface, a longitudinal core axis, a core radius, and a number of index-altered portions having an altered index of refraction different from the initial cladding index of refraction. Each of the index-altered multimode optical fiber core has a first transmission surface and second transmission surface that is substantially parallel to the first transmission surface. Also, these index-altered portions are arranged within the non-photosensitive material of the multimode optical fiber core such that the first transmission surface of one portion of the plurality of index-altered portions is substantially parallel to the second transmission surface of a neighboring portion to form a long period Bragg grating structure.

Abstract translation: 用于预定波长带的多模长周期光纤布拉格光栅（LPFBG）。 LPFBG由具有初始折射率折射率的非感光材料形成。 多模光纤芯包括具有与初始包层折射率不同的改变的折射率的基本圆柱形表面，纵向芯轴，芯半径和多个折射率改变部分。 每个索引改变的多模光纤芯具有基本上平行于第一传输表面的第一传输表面和第二传输表面。 此外，这些折射率改变部分布置在多模光纤芯的非感光材料内，使得多个折射率改变部分中的一部分的第一透射表面基本上平行于相邻部分的第二透射表面 形成长周期布拉格光栅结构。

公开(公告)号：US20080078742A1

公开(公告)日：2008-04-03

申请号：US11618728

申请日：2006-12-29

Applicant: Jianqiang HU ,  Zhixian Rui ,  Yanli Zhao ,  Yanjun Wang ,  Ming Li ,  Min Pan

Inventor： Jianqiang HU ,  Zhixian Rui ,  Yanli Zhao ,  Yanjun Wang ,  Ming Li ,  Min Pan

IPC: C03C15/00 ,  C23F1/00

CPC classification number: G01N1/32

Abstract: A method for preparing TEM sample, comprising the following steps: providing a sample with two pits and a failure region between the two pits, the failure region comprising a semiconductor device; milling the first surface of the failure region, till the cross section of the semiconductor device is exposed; etching the first surface of the failure region; cleaning the sample; milling the second surface of the failure region, till the failure region can be passed by electron beam. A sample can be prepared for a high resolution TEM through above steps. When the sample is observed, it is easy to distinguish the lightly doped drain, source/drain regions from the silicon substrate and observe the pattern and defects in the lightly doped drain, source/drain regions clearly; in addition, it is easy to distinguish the BPSG from the non-doped silicon dioxide in the failure region.

Abstract translation: 一种制备TEM样品的方法，包括以下步骤：提供具有两个凹坑的样品和两个凹坑之间的失效区域，所述失效区域包括半导体器件; 铣削故障区域的第一表面，直到半导体器件的横截面露出; 蚀刻失效区域的第一表面; 清洗样品; 铣削失效区域的第二表面，直到失效区域可以通过电子束。 可以通过上述步骤制备用于高分辨率TEM的样品。 当观察样品时，很容易区分轻掺杂漏极，源极/漏极区域与硅衬底，并清楚地观察到轻掺杂漏极，源极/漏极区域中的图案和缺陷; 此外，在故障区域中容易区分BPSG和非掺杂二氧化硅。

公开(公告)号：US20080041209A1

公开(公告)日：2008-02-21

申请号：US11893484

申请日：2007-08-16

Applicant: Ming Li

Inventor： Ming Li

IPC: B26D1/14

CPC classification number: B23D59/002 ,  Y10T83/7697

Abstract: The present invention provides a power saw, which comprises a base, a support arm mounted on the base, a cutting unit supported by the support arm and pivotable about a first axis to a first angle position, and a table disposed on the base for supporting a workpiece to be cut. The cutting unit comprises a cutting head which contains a cutting element, a gear box, and a motor. The gear box is positioned between and connects the cutting head and the motor. The power saw further comprises an angle indication device which comprises a first angle indication light, a control device connected to the first angle indication light, and a power source supplying power to the first angle indication light. The first angle indication light, the control device and the power source are electrically connected when the cutting unit is at the first angle position.

Abstract translation: 本发明提供一种动力锯，其包括基座，安装在基座上的支撑臂，由支撑臂支撑并可围绕第一轴线枢转到第一角度位置的切割单元，以及设置在基座上用于支撑的台子 要切割的工件。 切割单元包括切割头，其包含切割元件，齿轮箱和马达。 齿轮箱位于切割头和电机之间并连接。 动力锯进一步包括角度指示装置，其包括第一角度指示灯，连接到第一角度指示灯的控制装置和向第一角度指示灯供电的电源。 当切割单元处于第一角度位置时，第一角度指示灯，控制装置和电源电连接。

公开(公告)号：US07280720B2

公开(公告)日：2007-10-09

申请号：US11198721

申请日：2005-08-05

Applicant: Giovanni Barbarossa ,  Ming Li ,  Song Peng

Inventor： Giovanni Barbarossa ,  Ming Li ,  Song Peng

IPC: G02B6/28 ,  H04J14/02

CPC classification number: G02B6/29382 ,  G02B6/272 ,  G02B6/2766 ,  G02B6/29361 ,  G02B6/29362 ,  G02B6/29395 ,  G02F1/313 ,  G02F2202/40 ,  G02F2203/05

Abstract: A tunable optical filter comprises an optical switch having a single first optical port and a plurality of second optical ports; a plurality of band pass filters, each one of the band pass filters optically coupled to a respective second optical port; and an optical multiplexer having a plurality of inputs and a single output, each input optically coupled to a respective band pass filter, wherein the optical switch delivers a plurality of optical channels to a selected one of the band pass filters, the selected band pass filter transmitting a single selected optical channel to an input of the optical multiplexer. Alternatively, the multiplexer may be substituted by a second optical switch. Optionally, the band pass filters may reflect other channels back to the plurality of second optical ports.

Abstract translation: 可调光滤波器包括具有单个第一光端口和多个第二光端口的光开关; 多个带通滤波器，每个带通滤波器光耦合到相应的第二光端口; 以及具有多个输入和单个输出的光学多路复用器，每个输入光学耦合到相应的带通滤波器，其中所述光学开关将多个光学信道传送到所选择的带通滤波器中的一个，所选择的带通滤波器 将单个选择的光信道发送到光复用器的输入。 或者，多路复用器可以由第二光学开关代替。 可选地，带通滤波器可以将其它信道反射回多个第二光端口。

公开(公告)号：US07274051B2

公开(公告)日：2007-09-25

申请号：US11074900

申请日：2005-03-09

Applicant: Sungmin Kim ,  Ming Li ,  Eungjung Yoon

Inventor： Sungmin Kim ,  Ming Li ,  Eungjung Yoon

IPC: H01L29/76

CPC classification number: H01L29/42392 ,  H01L29/42384 ,  H01L29/66772 ,  H01L29/7854 ,  H01L29/78654 ,  H01L29/78696

Abstract: In a field effect transistor (FET), and a method of fabricating the same, the FET includes a semiconductor substrate, source and drain regions formed on the semiconductor substrate, a plurality of wire channels electrically connecting the source and drain regions, the plurality of wire channels being arranged in two columns and at least two rows, and a gate dielectric layer surrounding each of the plurality of wire channels and a gate electrode surrounding the gate dielectric layer and each of the plurality of wire channels.

Abstract translation: 在场效应晶体管（FET）及其制造方法中，FET包括半导体基板，在半导体基板上形成的源极和漏极区域，多个电连接源极和漏极区域的导线沟道，多个 线通道布置成两列并且至少两行，以及围绕多个线通道中的每一个的栅极电介质层和围绕栅介质层和多个有线通道中的每一个的栅电极。

公开(公告)号：US07265036B2

公开(公告)日：2007-09-04

申请号：US10898094

申请日：2004-07-23

Applicant: Sheeba J. Panayil ,  Ming Li ,  Shulin Wang ,  Jonathan C. Pickering

Inventor： Sheeba J. Panayil ,  Ming Li ,  Shulin Wang ,  Jonathan C. Pickering

IPC: H01L21/20

CPC classification number: C23C16/24 ,  Y10S977/814

Abstract: Numerous embodiments of a method for depositing a layer of nano-crystal silicon on a substrate. In one embodiment of the present invention, a substrate is placed in a single wafer chamber and heated to a temperature between about 300° C. to about 490° C. A silicon source is also fed into the single wafer chamber.

Abstract translation: 用于在衬底上沉积纳米晶体硅层的方法的许多实施例。 在本发明的一个实施例中，将衬底放置在单个晶片室中并加热到约300℃至约490℃的温度。硅源也被馈送到单个晶片室中。

公开(公告)号：US20070201023A1

公开(公告)日：2007-08-30

申请号：US11710284

申请日：2007-02-23

Applicant: Ming Li

Inventor： Ming Li

IPC: G01J3/44 ,  G01N21/65

CPC classification number: G01N21/65 ,  G01J3/02 ,  G01J3/0224 ,  G01J3/44 ,  G01N21/21 ,  G01N2021/216 ,  G01N2021/656 ,  G01N2021/8477

Abstract: A method of determining the crystalline orientation of a crystal surface of a workpiece using Raman spectroscopy. A beam of substantially monochromatic light is directed to be incident on the crystal surface at a predetermined angle of incidence. The beam of light is substantially polarized. The workpiece is rotated relative to the beam of light about a rotation axis substantially normal to the crystal surface. A Raman shift of scattered light is measured at each of a number of rotational positions during the rotation of the workpiece. The crystalline orientation of the crystal surface is determined based on the measured Raman shifts. Data indicating the determined crystalline orientation of the crystal surface is stored.

Abstract translation: 使用拉曼光谱测定工件的晶体表面的晶体取向的方法。 一根基本上单色的光被引导为以预定的入射角入射在晶体表面上。 光束基本上是极化的。 工件相对于光束绕基本上垂直于晶体表面的旋转轴线旋转。 在工件旋转期间，在多个旋转位置的每一个处测量散射光的拉曼偏移。 晶体表面的晶体取向基于测量的拉曼位移来确定。 存储表示确定的晶体表面的结晶取向的数据。