公开(公告)号：DE3788486D1

公开(公告)日：1994-01-27

申请号：DE3788486

申请日：1987-09-19

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： MUSUMECI SALVATORE ,  ZAMBRANO RAFFAELE

IPC: H01L21/76 ,  H01L21/331 ,  H01L21/74 ,  H01L21/761 ,  H01L21/8222 ,  H01L21/8228 ,  H01L27/06 ,  H01L27/082 ,  H01L29/73 ,  H01L21/72 ,  H01L21/82 ,  H01L29/06

公开(公告)号：DE3880996T2

公开(公告)日：1993-10-07

申请号：DE3880996

申请日：1988-12-16

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： ZAMBRANO RAFFAELE ,  MUSUMECI SALVATORE

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/761 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/082 ,  H01L29/732 ,  H01L21/82 ,  H01L21/76 ,  H01L27/08

公开(公告)号：IT8820357D0

公开(公告)日：1988-04-28

申请号：IT2035788

申请日：1988-04-28

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： ZAMBRANO RAFFAELE ,  MUSUMECI SALVATORE

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/761 ,  H01L21/8228 ,  H01L27/082 ,  H01L29/732

Abstract: In this process P type regions are diffused on a substrate of N type semiconductor material, said regions forming the horizontal isolation region of the NPN transistors and the low-resistivity collector region of the PNP transistors. Within each isolation region a high-concentration N type zone is created that acts as a low-resistivity collector region for the NPN transistors. An N type epitaxial layer is then grown over the whole surface of the device. The completion of the device is carried out in such a way to ensure that the low-concentration collector thickness of transistors NPN be practically equal to the low-concentration collector thickness of transistors PNP.

公开(公告)号：DE68910169D1

公开(公告)日：1993-12-02

申请号：DE68910169

申请日：1989-04-24

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： ZAMBRANO RAFFAELE ,  MUSUMECI SALVATORE

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/761 ,  H01L21/8228 ,  H01L27/082 ,  H01L29/732 ,  H01L21/82 ,  H01L27/08

Abstract: In this process P type regions are diffused on a substrate of N type semiconductor material, said regions forming the horizontal isolation region of the NPN transistors and the low-resistivity collector region of the PNP transistors. Within each isolation region a high-concentration N type zone is created that acts as a low-resistivity collector region for the NPN transistors. An N type epitaxial layer is then grown over the whole surface of the device. The completion of the device is carried out in such a way to ensure that the low-concentration collector thickness of transistors NPN be practically equal to the low-concentration collector thickness of transistors PNP.

公开(公告)号：IT1218230B

公开(公告)日：1990-04-12

申请号：IT2035788

申请日：1988-04-28

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： ZAMBRANO RAFFAELE ,  MUSUMECI SALVATORE

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/761 ,  H01L21/8228 ,  H01L27/082 ,  H01L29/732 ,  H01L

Abstract: In this process P type regions are diffused on a substrate of N type semiconductor material, said regions forming the horizontal isolation region of the NPN transistors and the low-resistivity collector region of the PNP transistors. Within each isolation region a high-concentration N type zone is created that acts as a low-resistivity collector region for the NPN transistors. An N type epitaxial layer is then grown over the whole surface of the device. The completion of the device is carried out in such a way to ensure that the low-concentration collector thickness of transistors NPN be practically equal to the low-concentration collector thickness of transistors PNP.

公开(公告)号：DE3854911T2

公开(公告)日：1996-09-05

申请号：DE3854911

申请日：1988-10-11

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： ZAMBRANO RAFFAELE

IPC: H01L21/033 ,  H01L21/762 ,  H01L21/76

Abstract: The process calls for determination of the contact areas (20, 21, 22) occupied by the collector (14), emitter (15) and base (10) implantations by selective removal of a layer of oxidation resistant material (5) only from said contact areas (20, 21, 22) and not from the separating zones (23, 24) between said areas.

公开(公告)号：DE3852362T2

公开(公告)日：1995-05-24

申请号：DE3852362

申请日：1988-08-30

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： MUSUMECI SALVATORE ,  ZAMBRANO RAFFAELE

IPC: H01L21/331 ,  H01L21/74 ,  H01L21/761 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/73 ,  H01L29/732 ,  H01L21/76