公开(公告)号：US20170256623A1

公开(公告)日：2017-09-07

申请号：US15601128

申请日：2017-05-22

Applicant: Sensor Electronic Technology, Inc.

Inventor： Mikhail Gaevski ,  Grigory Simin ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/45 ,  H01L33/38 ,  H01L21/285 ,  H01L29/417

CPC classification number: H01L29/452 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/7787 ,  H01L33/382 ,  H01L2933/0016

Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.

公开(公告)号：US20170251533A1

公开(公告)日：2017-08-31

申请号：US15444735

申请日：2017-02-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Grigory Simin

IPC: H05B33/08 ,  H01L33/14 ,  H01S5/30 ,  H01L33/32 ,  H01L33/06 ,  H01S5/042 ,  H01L33/38 ,  H01L33/24

Abstract: A solid-state light source with built-in access resistance modulation is described. The light source can include an active region configured to emit electromagnetic radiation during operation of the light source. The active region can be formed at a p-n junction of a p-type side with a p-type contact and a n-type side with a n-type contact. The light source includes a control electrode configured to modulate an access resistance of an access region located on the p-type side and/or an access resistance of an access region located on the n-type side of the active region. The solid-state light source can be implemented in a circuit, which includes a voltage source that supplies a modulation voltage to the control electrode to modulate the access resistance(s).

公开(公告)号：US20170196061A1

公开(公告)日：2017-07-06

申请号：US15387586

申请日：2016-12-21

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Alexander Dobrinsky ,  Maxim S. Shatalov

IPC: H05B33/08 ,  H05B37/02 ,  H01L27/15

CPC classification number: H05B33/0842 ,  H01L27/15 ,  H05B33/0809 ,  H05B33/0851 ,  H05B37/0227

Abstract: A solid-state light source (SSLS) structure with integrated control. In one embodiment, a SSLS control circuit can be integrated with a SSLS structure formed from a multiple of SSLSs. The SSLS control circuit controls the total operating current of the SSLS structure to within a predetermined total operating current limit by selectively limiting the current in individual SSLSs or in groups of SSLSs as each are turned on according to a sequential order. The SSLS control circuit limits the current in each of the individual SSLSs or groups of SSLSs as function of the saturation current of the SSLSs. In one embodiment, the individual SSLSs or groups of SSLSs has a turn on voltage corresponding to a voltage causing a preceding SSLS or group of SSLSs in the sequential order to saturate current.

公开(公告)号：US09647076B2

公开(公告)日：2017-05-09

申请号：US15096930

申请日：2016-04-12

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/02 ,  H01L29/40 ,  H01L29/778 ,  H01L29/872 ,  H01L29/06 ,  H01L29/20 ,  H01L29/417

CPC classification number: H01L29/404 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/405 ,  H01L29/41725 ,  H01L29/7786 ,  H01L29/872

Abstract: A circuit including a semiconductor device having a set of space-charge control electrodes is provided. The set of space-charge control electrodes is located between a first terminal, such as a gate or a cathode, and a second terminal, such as a drain or an anode, of the device. The circuit includes a biasing network, which supplies an individual bias voltage to each of the set of space-charge control electrodes. The bias voltage for each space-charge control electrode can be: selected based on the bias voltages of each of the terminals and a location of the space-charge control electrode relative to the terminals and/or configured to deplete a region of the channel under the corresponding space-charge control electrode at an operating voltage applied to the second terminal.

公开(公告)号：US20170117438A1

公开(公告)日：2017-04-27

申请号：US15331896

申请日：2016-10-23

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Grigory Simin ,  Alexander Dobrinsky

IPC: H01L33/12 ,  H01L33/08 ,  H01L33/42 ,  H01L33/30 ,  H01L33/46 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/0232 ,  H01L33/00 ,  H01L33/62 ,  H01L31/18 ,  H01L31/02 ,  G06F17/50 ,  H01L33/06

Abstract: A heterostructure for use in an electronic or optoelectronic device is provided. The heterostructure includes one or more semiconductor layers containing columnar nanostructures (e.g., nanowires). The nanowire semiconductor layer can include sub-layers of varying composition, at least one of which is an active layer that can include quantum wells and barriers. A heterostructure can include n-type and p-type semiconductor contact layers adjacent to the nanowire semiconductor layer containing the active layer.

公开(公告)号：US09601611B2

公开(公告)日：2017-03-21

申请号：US14333890

申请日：2014-07-17

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Mikhail Gaevski ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/06 ,  H01L29/417 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L29/0653 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41766 ,  H01L29/7788

Abstract: A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The lateral portion of the device channel can be located adjacent to a first surface of the device structure, and one or more contacts and/or a gate can be formed on the first surface. The device structure also includes a set of insulating layers located in the device structure between the lateral portion of the device channel and a second surface of the device structure opposite the first surface. An opening in the set of insulating layers defines a transition region between the lateral portion of the device channel and a vertical portion of the device channel. A contact to the vertical portion of the device channel can be located on the second surface.

公开(公告)号：US20170047438A1

公开(公告)日：2017-02-16

申请号：US15234350

申请日：2016-08-11

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur

IPC: H01L29/778 ,  H01L29/201 ,  H01L29/66 ,  H01L29/15

CPC classification number: H01L29/402 ,  H01L29/15 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/423 ,  H01L29/42316 ,  H01L29/7783 ,  H01L29/7832

Abstract: A normally-off transistor with a high operating voltage is provided. The transistor can include a barrier above the channel and an additional barrier layer located below the channel. A source electrode and a drain electrode are connected to the channel and a gate electrode is connected to the additional barrier layer located below the channel. The bandgap for each of the barrier layers can be larger than the bandgap for the channel. A polarization charge induced at the interface between the additional barrier layer below the channel and the channel depletes the channel. A voltage can be applied to the bottom barrier to induce free carriers into the channel and turn the channel on.

Abstract translation: 提供了具有高工作电压的常关晶体管。 晶体管可以包括通道上方的阻挡层和位于通道下方的附加阻挡层。 源电极和漏极连接到沟道，并且栅电极连接到位于沟道下方的附加势垒层。 每个阻挡层的带隙可以大于沟道的带隙。 在通道下方的附加阻挡层和通道之间的界面处感应的极化电荷消耗通道。 电压可以施加到底部屏障，以引导自由载流子进入通道并打开通道。

公开(公告)号：US20160225863A1

公开(公告)日：2016-08-04

申请号：US15096930

申请日：2016-04-12

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/778

CPC classification number: H01L29/404 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/405 ,  H01L29/41725 ,  H01L29/7786 ,  H01L29/872

Abstract: A circuit including a semiconductor device having a set of space-charge control electrodes is provided. The set of space-charge control electrodes is located between a first terminal, such as a gate or a cathode, and a second terminal, such as a drain or an anode, of the device. The circuit includes a biasing network, which supplies an individual bias voltage to each of the set of space-charge control electrodes. The bias voltage for each space-charge control electrode can be: selected based on the bias voltages of each of the terminals and a location of the space-charge control electrode relative to the terminals and/or configured to deplete a region of the channel under the corresponding space-charge control electrode at an operating voltage applied to the second terminal.

公开(公告)号：US20160181410A1

公开(公告)日：2016-06-23

申请号：US15052911

申请日：2016-02-25

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/205 ,  H01L29/40 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/404 ,  H01L29/405

Abstract: A semiconductor device including a low conducting field-controlling element is provided. The device can include a semiconductor including an active region (e.g., a channel), and a set of contacts to the active region. The field-controlling element can be coupled to one or more of the contacts in the set of contacts. The field-controlling element can be formed of a low conducting layer of material and have a lateral resistance that is both larger than an inverse of a minimal operating frequency of the device and smaller than an inverse of a maximum control frequency of the device.

公开(公告)号：US20160172544A1

公开(公告)日：2016-06-16

申请号：US15042433

申请日：2016-02-12

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Jinwei Yang ,  Michael Shur ,  Grigory Simin

IPC: H01L33/40 ,  H01L33/32 ,  H01L33/22 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/405 ,  H01L24/05 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/1134 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2933/0016 ,  H01L2924/00

Abstract: A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.

Abstract translation: 公开了一种包括第一半导体层和与第一半导体层的接触的器件。 第一半导体层和触点之间的界面包括具有特征高度和特征宽度的第一粗糙度轮廓。 特征高度可以对应于第一粗糙度轮廓中波峰和相邻谷之间的平均垂直距离。 特征宽度可以对应于第一粗糙度轮廓中的波峰和相邻谷之间的平均横向距离。