Abstract:
Solar spectral irradiance (SSI) measurements are important for solar collector / photovoltaic panel efficiency and solar energy resource assessment as well as being important for scientific meteorological/climate observations and material testing research. To date such measurements have exploited modified diffraction grating based scientific instruments which are bulky, expensive, and with low mechanical integrity for generalized deployment. A compact and cost-effective tool for accurately determining the global solar spectra as well as the global horizontal or tilted irradiances as part of on-site solar resource assessments and module performance characterization studies would be beneficial. An instrument with no moving parts for mechanical and environment stability in open field, non-controlled deployments could exploit software to resolve the global, direct and diffuse solar spectra from its measurements within the 280-4000 nm spectral range, in addition to major atmospheric processes, such as air mass, Rayleigh scattering, aerosol extinction, ozone and water vapour absorptions.
Abstract:
The method for manufacturing opto-electronic modules (1) comprises . a) providing a substrate wafer (PW) on which a multitude of detecting members (D) are arranged; . b) providing a spacer wafer (SW); . c) providing an optics wafer (OW), said optics wafer comprising a multitude of transparent portions (t) transparent for light generally detectable by said detecting members and at least one blocking portion (b) for substantially attenuating or blocking incident light generally detectable by said detecting members; . d) preparing a wafer stack (2) in which said spacer wafer (SW) is arranged between said substrate wafer (PW) and said optics wafer (OW) such that said detecting members (D) are arranged between said substrate wafer and said optics wafer. Preferably, a multitude of emission members (E) for emitting light generally detectable by said detecting members (D) is arranged on said substrate wafer (PW) such that a multitude of neighboring emission members and detecting members are present on said substrate wafer. Single modules (I) can be obtained by separating said wafer stack (2) into a multitude of separate modules (I). The manufacturing method may be applied for the manufacture of proximity sensors.
Abstract:
Provided are an integrating sphere photometer and a measuring method of the same. The integrating sphere photometer includes an integrating sphere including a left hemisphere and a right hemisphere, a photometer disposed on the center surface of the right hemisphere, a photometer baffle disposed in front of the photometer to be spaced apart therefrom, a light source to be tested disposed at the center region of the integrating sphere to illuminate light to at least an illumination region of the left hemisphere, an auxiliary lamp part disposed in the vicinity of a contact region between the left hemisphere and the right hemisphere to illuminate light to the illumination region, and an auxiliary lamp baffle disposed around the auxiliary lamp part to prevent the light emitted from the light source to be tested from being directly illuminated to the auxiliary lamp part and also to prevent the light emitted from the auxiliary lamp part from being directly illuminated to the light source to be tested.