Patent search cpc:"H01L2924/01201" Page 8

71.

发明申请
PALLADIUM COATED COPPER WIRE FOR BONDING APPLICATIONS 审中-公开
Title translation: 用于粘接应用的铜包铜线

公开(公告)号：WO2014137286A1

公开(公告)日：2014-09-12

申请号：PCT/SG2014/000064

申请日：2014-02-19

Applicant: HERAEUS MATERIALS SINGAPORE PTE.LTD.

Inventor： CHEW, Yeong, Huey , SARANGAPANI, Murali , MILKE, Eugen

IPC: H01L23/49 , C22C9/00 , H01L21/60

CPC classification number: H01L24/43 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/04042 , H01L2224/05624 , H01L2224/05644 , H01L2224/4312 , H01L2224/4321 , H01L2224/4382 , H01L2224/43848 , H01L2224/43985 , H01L2224/45014 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45664 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48472 , H01L2224/48624 , H01L2224/48644 , H01L2224/48824 , H01L2224/48844 , H01L2224/85099 , H01L2224/85205 , H01L2924/00011 , H01L2924/12041 , H01L2924/14 , H01L2924/181 , H01L2924/01047 , H01L2924/01015 , H01L2924/01203 , H01L2924/01201 , H01L2924/2075 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20109 , H01L2924/00014 , H01L2924/20303 , H01L2924/20304 , H01L2924/20305 , H01L2924/01204 , H01L2924/01202 , H01L2924/013 , H01L2924/00013 , H01L2924/00015 , H01L2924/00 , H01L2924/2011 , H01L2924/00012 , H01L2924/01005 , H01L2924/01033 , H01L2924/01034

Abstract: The invention is related to a bonding wire, comprising a core (2) with a surface, wherein the core comprises copper as a main component, and a coating layer (3) superimposed over the surface of the core (2), wherein the coating layer (3) comprises palladium as a main component, wherein the core (2) comprises at least 5 wt.ppm silver and at least 20 wt. ppm phosphorus as further components, wherein the wire meets the relation 0.0008

Abstract translation: 本发明涉及一种接合线，其包括具有表面的芯（2），其中所述芯包括铜作为主要成分，以及重叠在所述芯（2）的表面上的涂层（3），其中所述涂层层（3）包括钯作为主要成分，其中芯（2）包含至少5重量ppm的银和至少20重量％ ppm磷作为其他组分，其中线满足关系0.0008

72.

发明申请
CAP LAYER FOR AN ALUMINUM COPPER BOND PAD 审中-公开
Title translation: 铝箔铜箔垫

公开(公告)号：WO2007098306A3

公开(公告)日：2008-10-30

申请号：PCT/US2007060845

申请日：2007-01-22

Applicant: FREESCALE SEMICONDUCTOR INC , LEE CHU-CHUNG , HESS KEVIN J

Inventor： LEE CHU-CHUNG , HESS KEVIN J

IPC: H01L21/44

CPC classification number: H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05082 , H01L2224/05083 , H01L2224/05124 , H01L2224/05166 , H01L2224/05181 , H01L2224/05624 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48463 , H01L2224/48507 , H01L2224/48624 , H01L2224/48799 , H01L2224/85205 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01058 , H01L2924/01073 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01201 , H01L2924/01327 , H01L2924/04941 , H01L2924/04953 , H01L2924/10329 , H01L2924/14 , H01L2924/19043 , H01L2924/00014 , H01L2924/01203 , H01L2224/05147 , H01L2924/00 , H01L2224/48824 , H01L2924/01202

Abstract: A bond pad (25) for an electronic device (10) such as an integrated circuit makes electrical connection to an underlying device (14) via an interconnect layer (16). The bond pad has a first layer (24) of a material that is aluminum and copper and a second layer (26), over the first layer (26), of a second material that is aluminum and is essentially free of copper. The second layer (26) functions as a cap to the first layer (24) for preventing copper in the first layer (24) from being corroded by residual chemical elements. A wire (32) such as a gold wire may be bonded to the second layer (26) of the bond pad.

Abstract translation: 用于诸如集成电路的电子设备（10）的接合焊盘（25）经由互连层（16）电连接到下面的设备（14）。接合焊盘具有铝和铜的材料的第一层（24）和在第一层（26）上的第二材料的第二层（26），第二材料是铝并且基本上不含铜。第二层（26）用作第一层（24）的盖，用于防止第一层（24）中的铜被残留的化学元素腐蚀。诸如金线的线（32）可以结合到接合焊盘的第二层（26）。

73.

发明申请
WIRE-BONDING ALLOY COMPOSITES 审中-公开
Title translation: 焊接合金复合材料

公开(公告)号：WO00015858A1

公开(公告)日：2000-03-23

申请号：PCT/US1999/021217

申请日：1999-09-14

IPC: C22C5/02 , C22C9/00 , H01L21/60 , H01H1/02 , C22C21/00

CPC classification number: H01L24/43 , C22C5/02 , C22C9/00 , H01L24/45 , H01L2224/43 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01037 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01045 , H01L2924/01047 , H01L2924/01052 , H01L2924/01055 , H01L2924/01057 , H01L2924/01072 , H01L2924/01073 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/30107 , Y10T428/1216 , Y10T428/12222 , H01L2924/00015 , H01L2224/48 , H01L2924/00 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/01201 , H01L2924/01204 , H01L2924/013 , H01L2924/00013

Abstract: A metal alloy composite comprising a phase of a highly-conductive base metal in the form of a matrix and a phase of another metal positioned within the matrix, the base metal being present in a major amount and the other metal being present in a minor amount, the metal alloy composite being capable of being formed into a very thin wire for use in a semiconductor application which includes a terminal assembly comprising an electrically conductive terminal in conductive contact with a conductive member and another electrically conductive terminal in conductive contact with a semiconductor, said terminals being joined by said alloy composite wire, examples of the base metal being gold, copper, and aluminum.

Abstract translation: 一种金属合金复合材料，其包含基体形式的高导电性基体金属和位于基体内的另一种金属的相，所述贱金属以大量存在，而另一种金属以少量存在该金属合金复合体能够形成为用于半导体应用的非常细的导线，其包括端子组件，该端子组件包括与导电部件导电接触的导电端子和与半导体导电接触的另一个导电端子，所述端子由所述合金复合线连接，所述基体金属的实例为金，铜和铝。

74.

发明授权
Semiconductor device and semiconductor device manufacturing method 有权

公开(公告)号：US09653390B2

公开(公告)日：2017-05-16

申请号：US14422573

申请日：2012-09-04

Applicant: Yosuke Nakata , Masayoshi Tarutani

Inventor： Yosuke Nakata , Masayoshi Tarutani

IPC: H01L23/48 , H01L23/498 , H01L23/00

CPC classification number: H01L24/05 , H01L23/498 , H01L24/01 , H01L24/03 , H01L24/08 , H01L24/11 , H01L24/16 , H01L24/48 , H01L24/73 , H01L2224/034 , H01L2224/0401 , H01L2224/04042 , H01L2224/05083 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/05624 , H01L2224/05644 , H01L2224/0603 , H01L2224/16113 , H01L2224/16245 , H01L2224/29101 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73251 , H01L2224/73265 , H01L2924/00014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01042 , H01L2924/01047 , H01L2924/01079 , H01L2924/07025 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/2064 , H01L2924/20641 , H01L2924/20642 , H01L2924/20643 , H01L2924/20644 , H01L2924/20645 , H01L2924/20646 , H01L2924/20647 , H01L2924/20648 , H01L2924/20649 , H01L2924/2065 , H01L2924/351 , H01L2924/00 , H01L2224/45099 , H01L2924/014 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2924/01201 , H01L2924/01014

Abstract: A semiconductor device of the present invention includes a semiconductor element, a surface electrode formed on a surface of the semiconductor element, a metal film formed on the surface electrode so as to have a joining portion and a stress relieving portion formed so as to border on and surround the joining portion, solder joined to the joining portion while avoiding the stress relieving portion, and an external electrode joined to the joining portion through the solder.

75.

发明申请
PALLADIUM (PD)-COATED COPPER WIRE FOR BALL BONDING 审中-公开
Title translation: PALLADIUM（PD） - 用于球接的铜线

公开(公告)号：US20170057020A1

公开(公告)日：2017-03-02

申请号：US15248196

申请日：2016-08-26

Applicant: TANAKA DENSHI KOGYO K.K.

Inventor： Hiroyuki AMANO , Somei YARITA , Yusuke SAKITA , Yuki ANTOKU , Wei CHEN

IPC: B23K35/02 , C22C9/00 , C22C5/04 , C22C5/02 , B23K35/30 , B21C1/02 , C22F1/14 , C25D3/50 , C23C14/16 , C23C14/35 , C23C26/00 , B32B15/01 , C22C9/06 , C22F1/08

CPC classification number: B23K35/0227 , B21C1/02 , B23K35/302 , B32B15/018 , C22C5/02 , C22C5/04 , C22C9/00 , C22C9/06 , C22F1/08 , C22F1/14 , C23C14/165 , C23C14/35 , C23C26/00 , C25D3/50 , H01L2224/05624 , H01L2224/45 , H01L2224/45015 , H01L2224/45147 , H01L2224/45565 , H01L2224/45664 , H01L2924/00011 , H01L2924/10253 , H01L2924/01201 , H01L2924/00012 , H01L2924/01016 , H01L2924/01005 , H01L2924/01015 , H01L2924/01006 , H01L2924/20751 , H01L2924/20752 , H01L2924/01004 , H01L2924/013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01028 , H01L2924/01078 , H01L2924/01203 , H01L2924/01206

Abstract: A palladium coated copper wire for ball bonding includes a core formed of pure copper or copper alloy having a purity of 98% by mass or more, and a palladium draw coated layer coated on the core. The copper wire has a diameter of 10 to 25 μm, and the palladium drawn layer contains sulfur, phosphorus, boron or carbon.

Abstract translation: 用于球接的钯包铜线包括由纯度为98质量％以上的纯铜或铜合金形成的芯和涂覆在芯上的钯吸附涂层。铜线的直径为10〜25μm，钯拉伸层含有硫，磷，硼或碳。

76.

发明授权
Bonding wire for semiconductor device use and method of production of same 有权
Title translation: 半导体器件用接合线及其制造方法

公开(公告)号：US09543266B2

公开(公告)日：2017-01-10

申请号：US14893789

申请日：2015-03-31

Applicant: Nippon Micrometal Corporation , Nippon Steel & Sumikin Materials Co., Ltd.

Inventor： Takashi Yamada , Daizo Oda , Ryo Oishi , Teruo Haibara , Tomohiro Uno

IPC: H01B5/00 , H01L23/00 , B21C1/00 , C22C5/06 , C22C5/08 , C22F1/00 , C22F1/14

CPC classification number: H01L24/45 , B21C1/00 , B21C1/003 , C22C5/06 , C22C5/08 , C22F1/00 , C22F1/14 , H01L24/43 , H01L2224/4321 , H01L2224/43848 , H01L2224/43986 , H01L2224/45012 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2924/00011 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/201 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00 , H01L2924/01201 , H01L2924/01016 , H01L2924/01017 , H01L2924/20751 , H01L2924/20752 , H01L2924/12044 , H01L2924/00015 , H01L2224/45664 , H01L2924/01049 , H01L2924/01045 , H01L2924/01004 , H01L2924/01005

Abstract: Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis “a” and a short axis “b” of 10 or more and with an area of 15 μm2 or more (“fiber texture”), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 10% to less than 50%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 70% or more. During the drawing step, a drawing operation with a rate of reduction of area of 15.5% or more is performed at least once. The final heat treatment temperature and the pre-final heat treatment temperature are made predetermined ranges.

Abstract translation: 用于半导体器件的接合线，其中通过（1）在包含线中心并且平行于线纵向（线中心横截面）的横截面中抑制倾斜故障和弹簧故障，不存在具有长轴“a”的比率a / b和短轴“b”为10以上，面积为15μm2以上（“纤维织构”），（2）当测定线材纵向的晶体方向线中心横截面的方向，晶体方向<100>相对于导线纵向方向的角度差为15°以下的面积比为10％以上且小于50％，（3 ）当在线表面测量线长度方向的晶体方向时，晶体方向<100>与线长度方向的角度差为15°以下的面积比为70％以上。在拉伸步骤中，至少进行一次具有15.5％以上的面积减小率的拉拔操作。将最终的热处理温度和预热处理温度设定为预定范围。

77.

发明授权
Module comprising a semiconductor chip 有权

公开(公告)号：US09379046B2

公开(公告)日：2016-06-28

申请号：US14752295

申请日：2015-06-26

Applicant: Infineon Technologies AG

Inventor： Ralf Otremba , Xaver Schloegel , Khai Huat Jeffrey Low , Chee Soon Law

IPC: H01L21/00 , H01L23/495 , H01L23/00 , B81C1/00

CPC classification number: H01L23/49503 , B81C1/00301 , H01L23/4952 , H01L23/49524 , H01L23/49562 , H01L23/49582 , H01L24/00 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/84 , H01L24/85 , H01L24/91 , H01L2224/05553 , H01L2224/05624 , H01L2224/05647 , H01L2224/0603 , H01L2224/37144 , H01L2224/40245 , H01L2224/4103 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45624 , H01L2224/45639 , H01L2224/45644 , H01L2224/48091 , H01L2224/48247 , H01L2224/48464 , H01L2224/48472 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/4903 , H01L2224/49051 , H01L2224/73213 , H01L2224/78301 , H01L2224/7865 , H01L2224/84801 , H01L2224/85045 , H01L2224/85099 , H01L2224/851 , H01L2224/85205 , H01L2224/85439 , H01L2224/85444 , H01L2224/85801 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1301 , H01L2924/1304 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/181 , H01L2924/2075 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/48639 , H01L2224/48644 , H01L2924/01016 , H01L2924/01026 , H01L2924/01201

Abstract: A module includes a semiconductor chip having at least a first terminal contact surface and a second terminal contact surface. A first bond element made of a material on the basis of Cu is attached to the first terminal contact surface, and a second bond element is attached to the second terminal contact surface. The second bond element is made of a material different from the material of the first bond element or is made of a type of bond element different from the type of the first bond element.

78.

发明授权
Aluminum coated copper ribbon 有权
Title translation: 镀铝铜带

公开(公告)号：US09214444B2

公开(公告)日：2015-12-15

申请号：US14399003

申请日：2013-05-07

Applicant: Heraeus Materials Technology GmbH & Co. KG

Inventor： Eugen Milke , Peter Prenosil , Sven Thomas

IPC: H01L23/00 , H01B1/02 , B21C1/00 , B21C9/00 , B32B15/01 , H01L25/07 , H01L25/16

CPC classification number: H01L24/48 , B21C1/003 , B21C9/00 , B32B15/01 , H01B1/023 , H01B1/026 , H01L24/43 , H01L24/45 , H01L24/85 , H01L25/072 , H01L25/165 , H01L2224/43 , H01L2224/4321 , H01L2224/4382 , H01L2224/43848 , H01L2224/45014 , H01L2224/45015 , H01L2224/45033 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45624 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/4569 , H01L2224/48091 , H01L2224/48106 , H01L2224/48137 , H01L2224/48227 , H01L2224/4847 , H01L2224/85051 , H01L2224/85205 , H01L2924/00011 , H01L2924/00014 , H01L2924/00015 , H01L2924/01006 , H01L2924/01015 , H01L2924/01047 , H01L2924/01322 , H01L2924/1203 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/14 , H01L2924/16151 , H01L2924/20303 , H01L2924/20304 , H01L2924/20305 , H01L2924/2064 , H01L2924/20641 , H01L2924/20642 , H01L2924/20643 , H01L2924/207 , H01L2924/2075 , Y10T29/49117 , Y10T428/1275 , H01L2924/01028 , H01L2924/01014 , H01L2924/01012 , H01L2924/01008 , H01L2924/01205 , H01L2924/01204 , H01L2924/01203 , H01L2924/01201 , H01L2924/01206 , H01L2924/00 , H01L2924/013 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2224/05599 , H01L2924/00013 , H01L2924/01049

Abstract: A ribbon, preferably a bonding ribbon for bonding in microelectronics, contains a first layer containing copper, a coating layer containing aluminum superimposed over the first layer, and an intermediate layer. In a cross-sectional view of the ribbon, the area share of the first layer is from 50 to 96% and the aspect ratio between the width and the height of the ribbon in a cross-sectional view is from 0.03 to less than 0.8. The ribbon has a cross-sectional area of 25,000 μm2 to 800,000 μm2. The intermediate layer contains at least one intermetallic phase containing materials of the first and coating layers. The invention further relates to a process for making a wire, to a wire obtained by the process, to an electric device containing the wire, to a propelled device comprising said electric device and to a process of connecting two elements through the wire by wedge-bonding.

Abstract translation: 带，优选用于在微电子学中结合的粘合带包含含有铜的第一层，包含叠加在第一层上的铝的涂层和中间层。在带的横截面视图中，第一层的面积份额为50至96％，横截面视图中的带的宽度和高度之间的纵横比为0.03至小于0.8。带的截面积为25,000μm2至800,000μm2。中间层含有至少一种包含第一层和涂层的材料的金属间相。本发明还涉及一种用于将由该工艺获得的线材制成的线材制造到包含该线材的电气装置的方法，该方法包括所述电气装置的推进装置以及通过楔形连接器将两个元件通过导线连接的过程，粘接。