公开(公告)号：US08388751B2

公开(公告)日：2013-03-05

申请号：US12542131

申请日：2009-08-17

Applicant: David Harvey ,  Weidong Huang ,  Scott Reitsma ,  Minh Sy Le

Inventor： David Harvey ,  Weidong Huang ,  Scott Reitsma ,  Minh Sy Le

IPC: C30B15/20

CPC classification number: C30B29/06 ,  C30B15/007 ,  C30B15/14 ,  C30B29/64 ,  Y10T117/1036 ,  Y10T117/1044 ,  Y10T117/1068

Abstract: A method of growing a ribbon crystal provides a crucible containing molten material and passes string through the molten material to grow the ribbon crystal. The method further directs gas flow around the ribbon crystal such that the gas flows down along the ribbon crystal toward the crucible.

Abstract translation: 生长带状晶体的方法提供了一种含有熔融材料的坩埚，并将线穿过熔融材料以使带状晶体生长。 该方法进一步引导气体流过带状晶体，使得气体沿着带状晶体朝向坩埚向下流动。

公开(公告)号：US20120186512A1

公开(公告)日：2012-07-26

申请号：US13434167

申请日：2012-03-29

Applicant: Benno Orschel ,  Andrzej Buczkowski ,  Joel Kearns ,  Keiichi Takanashi ,  Volker Todt

Inventor： Benno Orschel ,  Andrzej Buczkowski ,  Joel Kearns ,  Keiichi Takanashi ,  Volker Todt

IPC: C30B15/22 ,  C30B15/30

CPC classification number: C30B15/22 ,  C30B15/203 ,  C30B29/06 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1036 ,  Y10T117/104 ,  Y10T117/1044 ,  Y10T117/1048 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/106 ,  Y10T117/1064 ,  Y10T117/1068 ,  Y10T117/1072

Abstract: A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.

Abstract translation: 用于生长半导体晶体的方法和装置包括以拉速从熔体中拉出半导体晶体，并通过组合周期性拉速与平均速度来调制拉速。 拉速的调制允许在晶体形成期间原位测定熔体和晶体中的特征温度梯度。 温度梯度可用于控制影响成品晶体的形态稳定性或本征材料性质的相关工艺参数，例如晶体的目标拉速或熔体间隙，这决定了生长过程中晶体的热梯度。

公开(公告)号：US20060191470A1

公开(公告)日：2006-08-31

申请号：US11396800

申请日：2006-04-03

Applicant: Richard Wallace

Inventor： Richard Wallace

IPC: C30B15/00 ,  C30B27/02 ,  C30B21/06 ,  C30B28/10 ,  C30B30/04

CPC classification number: C30B15/34 ,  C30B15/005 ,  C30B15/007 ,  C30B15/24 ,  C30B29/06 ,  Y10T117/1036 ,  Y10T117/1044 ,  Y10T117/1052

Abstract: Methods and apparatus for concurrent growth of multiple crystalline ribbons from a single crucible employ meniscus shapers to facilitate continuous growth of discrete and substantially flat crystalline ribbons having controlled width.

公开(公告)号：US5558712A

公开(公告)日：1996-09-24

申请号：US334753

申请日：1994-11-04

Applicant: Juris P. Kalejs

Inventor： Juris P. Kalejs

IPC: C30B15/34 ,  C30B35/00

CPC classification number: C30B15/34 ,  Y10T117/10 ,  Y10T117/1036

Abstract: An apparatus for growing hollow crystalline bodies by the EFG process, comprising an EFG die having a top surface shaped for growing a hollow crystalline body having a cross-sectional configuration in the shape of a polygon having n faces, and a radiation shield adjacent to and surrounded by the top end surface of the die, characterized in that the shield has an inner edge defining a similar polygon with n sides, and the inner edge of the shield is notched so that the spacing between the n faces and the n sides is greatest between the central portions of the n faces and the n sides, whereby the greater spacing at the central portions helps to reduce lateral temperature gradients in the crystalline body that is grown by use of the die.

Abstract translation: 一种用于通过EFG工艺生长空心结晶体的装置，包括具有成形为具有呈n形面多边形形状的横截面形状的中空晶体的顶表面的EFG管芯和与其相邻的辐射屏蔽 由模具的顶端表面包围，其特征在于，屏蔽件具有限定具有n个侧面的类似多边形的内边缘，并且屏蔽件的内边缘被切口，使得n面和n侧之间的间隔最大 在n个面的中心部分和n个侧面之间，由此在中心部分处的较大的间距有助于减少通过使用该模具生长的结晶体中的横向温度梯度。

公开(公告)号：US5551977A

公开(公告)日：1996-09-03

申请号：US339357

申请日：1994-11-14

Applicant: Andrew A. Menna

Inventor： Andrew A. Menna

IPC: C30B15/34 ,  C30B35/00

CPC classification number: C30B15/34 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1036

Abstract: An improved susceptor for a crucible/die assembly for growing tubular crystalline structures by the EFG process is provided. The crucible/die assembly comprises a die having a substantially polygonally-shaped top end surface for supporting a film of silicon feed material that is replenished from a melt in the crucible through capillary action. A hollow crystalline body is grown from the film of silicon material on the top end surface of the die. The heat susceptor is made of graphite or similar material, and has a peripheral configuration similar to that of the die. Further, the upper surface of the heat susceptor has a central land and a plurality of circumferentially-spaced upwardly extending projections. The central land thermally contacts a central portion of the lower surface of the crucible/die, and the projections thermally contact the lower surface of the crucible/die at its corners, whereby a temperature distribution is provided that permits growth of hollow bodies having more nearly constant thickness walls.

Abstract translation: 提供了用于通过EFG方法生长管状结晶结构的用于坩埚/模具组件的改进的基座。 坩埚/模具组件包括具有基本上多边形形状的顶端表面的模具，用于支撑通过毛细管作用从坩埚中的熔体补充的硅进料材料的膜。 在模具的顶端表面上从硅材料的膜生长中空的结晶体。 热感器由石墨或类似材料制成，并且具有与模具相似的外围结构。 此外，热基座的上表面具有中心区域和多个周向间隔开的向上延伸的突起。 中心区域与坩埚/模具的下表面的中心部分热接触，并且突起在其拐角处与坩埚/模具的下表面热接触，由此提供温度分布，允许具有更接近 恒定厚度的墙壁。

公开(公告)号：US5431124A

公开(公告)日：1995-07-11

申请号：US182574

申请日：1994-01-18

Applicant: Hiroshi Machida ,  Tsuguo Fukuda ,  Keigo Hoshikawa

Inventor： Hiroshi Machida ,  Tsuguo Fukuda ,  Keigo Hoshikawa

IPC: C30B15/00 ,  C30B15/34

CPC classification number: C30B15/34 ,  C30B15/00 ,  C30B29/16 ,  Y10T117/1036

Abstract: A rutile single crystal with no grain boundaries of large inclination is obtained by an EFG crystal growth process wherein a die provided with slits is incorporated in a feed melt 2 to deliver up the melt through the slits until it reaches the upper face of the die, thereby obtaining a single crystal conforming in configuration to the die by pulling growth.

Abstract translation: 通过EFG晶体生长方法获得不具有大倾斜晶界的金红石单晶，其中在进料熔体2中装有切口的模具，以将熔体通过狭缝传送直到其到达模具的上表面， 从而通过拉伸生长获得与构型相一致的单晶。

公开(公告)号：US5268061A

公开(公告)日：1993-12-07

申请号：US950214

申请日：1992-09-24

Applicant: Kuk H. Sunwoo ,  Jae Y. Ma ,  Tae H. Kim

Inventor： Kuk H. Sunwoo ,  Jae Y. Ma ,  Tae H. Kim

IPC: C30B15/24 ,  C30B15/00 ,  C30B15/34 ,  C30B29/22 ,  C30B15/22

CPC classification number: C30B15/34 ,  C30B15/00 ,  C30B29/24 ,  Y10T117/1008 ,  Y10T117/1036 ,  Y10T117/1068

Abstract: A method and apparatus for producing a manganese-zinc ferrite single crystal using a local liquid pool formation which involves melting of a starting material in a crucible and lowering of the temperature of crucible to make the resultant melt maintain form three phase regions of an upper liquid pool region, an intermediate semi-rigid region and a lower solid region. A pair of heaters are disposed at the upper and side wall portions of crucible and controlled differently from each other so that the formed lower solid region extends at its peripheral portion throughout the inner surface of the side wall portion of the crucible, thereby minimizing the contact of the formed upper liquid pool region with the whole inner surface of the crucible. For monitoring respective temperatures of various portions in the crucible to control the heaters, there are provided thermocouples which includes a thermocouple for the crystal drawing port member, a thermocouple for the upper portion of crucible, a thermocouple for the upper portion of the side wall of crucible and a thermocouple for the lower portion of crucible.

Abstract translation: 一种使用局部液体池形成生产锰锌铁氧体单晶的方法和装置，其包括在坩埚中熔化原料并降低坩埚的温度以使所得熔体保持形成上部液体的三相区域 池区域，中间半刚性区域和下部固体区域。 一对加热器设置在坩埚的上壁部分和侧壁部分，并且彼此不同地控制，使得形成的下部固体区域在其周边部分延伸贯穿坩埚的侧壁部分的内表面，从而使接触最小化 形成的上部液体池区域与坩埚的整个内表面。 为了监测坩埚中各部分的温度以控制加热器，提供了热电偶，其包括用于晶体抽出口部件的热电偶，用于坩埚上部的热电偶，用于上部侧壁的热电偶 坩埚和用于坩埚下部的热电偶。

公开(公告)号：US4335081A

公开(公告)日：1982-06-15

申请号：US232570

申请日：1981-02-09

Applicant: Emanual M. Sachs ,  Brian H. Mackintosh

Inventor： Emanual M. Sachs ,  Brian H. Mackintosh

IPC: C30B15/00 ,  C30B15/34

CPC classification number: C30B15/34 ,  C30B15/005 ,  Y10S117/90 ,  Y10T117/1036 ,  Y10T117/1044 ,  Y10T117/106

Abstract: An improved furnace is provided for growing crystalline bodies from a melt. The improved furnace is characterized by a door assembly which is remotely controlled and is arranged so as to selectively shut off or permit communication between an access port in the furnace enclosure and a hot zone within that enclosure. The invention is especially adapted to facilitate use of crystal growing cartridges of the type disclosed in U.S. Pat. No. 4,118,197.

Abstract translation: 提供了一种用于从熔体生长晶体的改进的炉。 改进的炉子的特征在于门组件，其被远程控制并且布置成选择性地切断或允许炉壳体中的进入端口与该外壳内的热区域之间的通信。 本发明特别适用于有利于使用美国专利No.5,623,997中公开的类型的晶体生长筒。 第4,118,197号。

公开(公告)号：US3681033A

公开(公告)日：1972-08-01

申请号：US3681033D

申请日：1969-01-31

Applicant: GEN MOTORS CORP

Inventor： BLYEIL CARL E

IPC: C30B15/06 ,  C30B29/64 ,  B01J17/18

CPC classification number: C30B15/06 ,  Y10T117/1036 ,  Y10T117/1048 ,  Y10T117/1068

Abstract: A METHOD AND APPARATUS IS DESCRIBED FOR HORIZONTALLY PULLING CRYSTAL RIBBONS FROM A MELT PARALLEL TO THE MELT SURFACE. THE HEAT OF CRYSTALLIZATION IS SELECTIVELY REMOVED FROM ONE END OF A SEED CRYSTAL BY A HEAT ABSORBING MEANS PERPENDICULAR TO THE MELT SURFACE. MEANS ARE PROVIDED TO APPROPRIATELY SUPPRESS NET LOSS OF THE HEAT OF FUSION FROM THE BALANCE OF THE SEED IN CONTACT WITH THE MELT TO CONTROL THE THICKNESS OF THE RESULTANT RIBBON.

D R A W I N G

公开(公告)号：US3086856A

公开(公告)日：1963-04-23

申请号：US40942054

申请日：1954-02-10

Applicant: SIEMENS AG

Inventor： KARL SIEBERTZ

IPC: C30B13/16 ,  C30B13/26 ,  C30B13/28 ,  C30B13/32 ,  C30B15/00 ,  C30B15/02 ,  C30B15/30

CPC classification number: C30B13/28 ,  C30B13/16 ,  C30B13/26 ,  C30B13/32 ,  C30B15/002 ,  C30B15/02 ,  C30B15/30 ,  Y10S117/901 ,  Y10S117/91 ,  Y10S117/917 ,  Y10T117/1036 ,  Y10T117/1076