公开(公告)号：JPS5826442A

公开(公告)日：1983-02-16

申请号：JP12546181

申请日：1981-08-11

Applicant: TOKYO SHIBAURA ELECTRIC CO

Inventor： INOHARA KOUICHIROU ,  ENDOU YORIMASA

IPC: G01T1/18 ,  H01J47/08

Abstract: PURPOSE:To permit the life of a GM counter tube to be known accurately and enable measurement error and proper exchange time to be estimated by providing the pulse integration circuit which is applied for the measurement of radioactive rays and posseses preset function and the alarm generating part. CONSTITUTION:When a GM counter tube 11 receives the radioactive ray to be measured, the counter tube 11 transmits the pulse signal in a number which is proportional to the dose of radioactive rays, and the pulse signals are counted by a preset-type pulse integration circuit 12 through a signal wire 13. The integration value is displayed on an integration display device 14. In the preset- type pulse integration circuit 12, the number of counts which shows the estimated life of the sealed-up gas in the GM counter tube 11 is preset beforehand. When the integration value is attained, alarm signal is transmitted from the pulse integration circuit 12 to the alarm display part 15 to inform the life of the GM counter tube 11.

公开(公告)号：JPS5821578A

公开(公告)日：1983-02-08

申请号：JP12085181

申请日：1981-07-31

Applicant: SHIMADZU CORP

Inventor： AKUTAGAWA TETSUO ,  HIRAOKA MASARU

IPC: H01J47/08 ,  G01T1/18

Abstract: PURPOSE:To achieve earier measurement starting time while preventing damage to a meter by discharging charged electric charge quickly through a clamp circuit while clamping overvoltage therewith. CONSTITUTION:Ionization current generated from an ionization chamber 1 is amplified with an arithmetic amplifier 2 and a negative output current is generated to deflect a pointer of a meter 3. On the other hand, the arithmetic amplifier 2 is connected to the ground on the negative side of a power source 4 thereof via a series circuit of a variable resistance 5 and a diode 6 and two diodes 7 and 8 are connected to an output terminal thereof. When output voltage V0 of the arithmetic amplifier 2 is V0>V2-(VR+V1), it is clamped to V2-(VR+V1). When it is V0

公开(公告)号：JPS57208053A

公开(公告)日：1982-12-21

申请号：JP9246381

申请日：1981-06-16

Applicant: HAMAMATSU TV CO LTD

Inventor： HONMA ATSUSHI ,  SUZUKI HIROYUKI ,  TAKAGI SADAMITSU

IPC: G01T1/18 ,  H01J47/08

Abstract: PURPOSE:To obtain a non-directional GM counter with an excellent energy characteristic by fixing a tubular GM tube inside a spherical shell made of a material interrupting radiations of relatively low energy, and homogeneously distributing numbers of penetrating holes in the said spherical shell. CONSTITUTION:An outgoing wire 1b extending from the outer wall of a GM tube 1, and a core wire 1a strained across the center of the tube 1 are drawn out in one direction. A spherical shell 5, which is made of a tin plate of 2mm. thickness, is provided with numbers of penetrating holes 6 extending toward the center of the shell 5. Here, the holes 6 are homogeneously distributed over the entire surface of the shell 5.

公开(公告)号：JPS53135688A

公开(公告)日：1978-11-27

申请号：JP5044077

申请日：1977-04-30

Applicant: MITSUBISHI ELECTRIC CORP

Inventor： UEDA TOSHIHARU

IPC: G01T1/18 ,  H01J47/08

Abstract: PURPOSE:To thin tube wall, enhance counting efficiency and increase corrosion resistance, and high-temperature-, high-moisture resistances by using a metal having rigidity for the tube body of a GM counter tube for measurement of betaUPSILON and electrodepositing or evaporating a corrosion-resistant metal on top thereof.

公开(公告)号：JPS4959568A

公开(公告)日：1974-06-10

申请号：JP7239373

申请日：1973-06-28

IPC: H01J40/18 ,  G01J1/02 ,  H01J17/20 ,  H01J47/08

公开(公告)号：JPS4832091U

公开(公告)日：1973-04-18

申请号：JP7495871

申请日：1971-08-23

IPC: H01J47/06 ,  G01T1/00 ,  H01J47/08

公开(公告)号：JPS4217200Y1

公开(公告)日：1967-10-03

申请号：JP2998467

申请日：1967-04-12

IPC: H01J47/08 ,  H01J39/30

公开(公告)号：JPS427040Y1

公开(公告)日：1967-03-31

申请号：JP1311064

申请日：1964-02-27

IPC: H01J47/08 ,  H01J39/30

公开(公告)号：WO2008115202A2

公开(公告)日：2008-09-25

申请号：PCT/US2007020158

申请日：2007-09-18

Applicant: CORNELL RES FOUNDATION INC

Inventor： LAL AMIT ,  DUGGIRALA RAJESH ,  CHANDRASEKHAR MVS

IPC: H01J47/08

CPC classification number: G21H5/00 ,  G01T1/2018 ,  G01T3/06 ,  G01T7/00

Abstract: A self-powered sensor (e.g., 100, 180, 220, 400) can wake-up systems requiring a trigger signal to wake-up circuits or systems in power-sleep mode, conserving the battery power for emergency computations and communications. In a humidity sensor embodiment 100, radioisotope generated voltage biases are employed to power sensor capacitors to realize self-powered sensors. A first self-powered capacitor biasing architecture 160 is based on changes in the leakage resistance of the polymer capacitor 110, and a second self-powered capacitor biasing architecture 140 uses changes in the capacitance of the polymer capacitor. Another sensor embodiment uses changes in the capacitance or leakage resistance of the sensor capacitor to modulate conductance of a MOSFET 114, realizing an easily readable electronic output signal. A temperature sensor embodiment 180 and a MEMS cantilever structure based fissile material proximity sensor embodiment 400 are also disclosed.

Abstract translation: 自供电传感器（例如，100,180,220,400）可以唤醒需要触发信号的系统以唤醒电源或电源睡眠模式下的系统，从而节省用于紧急计算和通信的电池电力。 在湿度传感器实施例100中，使用放射性同位素产生的电压偏压来为传感器电容器供电以实现自供电传感器。 第一自供电电容器偏置架构160基于聚合物电容器110的耐漏电流的变化，第二自供电电容器偏置架构140使用聚合物电容器的电容的变化。 另一传感器实施例使用传感器电容器的电容或漏电阻的变化来调制MOSFET 114的电导，实现易于读取的电子输出信号。 还公开了温度传感器实施例180和基于MEMS悬臂结构的裂变材料接近传感器实施例400。

公开(公告)号：WO2008054862A2

公开(公告)日：2008-05-08

申请号：PCT/US2007/067181

申请日：2007-04-23

Applicant: II-VI INCORPORATED ,  SOLDNER, Stephen, A.

Inventor： SOLDNER, Stephen, A.

IPC: H01J47/08

CPC classification number: H01J47/08

Abstract: A semiconductor radiation detector (1', 1'', 1''', 1"") includes a body of semiconducting material (2) responsive to ionizing radiation for generating electron-hole pairs in the bulk of said body (2). A conductive cathode (4) is disposed on one side of the body (2) and an anode structure (6) is disposed on the other side of the body (2). The anode structure (6) includes a first set of spaced elongated conductive fingers (8) in contact with the body (2) and defining between each pair of fingers thereof an elongated gap (10) and a second set of spaced elongated conductive fingers (12) positioned above the surface of the body (2) that includes spaced elongated conductive fingers (8). Each finger of the second set of spaced elongated conductive fingers (12) overlays, either partially or wholly, the elongated gap between a pair of adjacent fingers of the first set of spaced elongated conductive fingers (8).

Abstract translation: 半导体辐射检测器（1'，1“，1”，1“”）包括响应于电离辐射的半导体材料（2）主体，以产生电子空穴对 所述主体（2）的大部分。 导电阴极（4）设置在主体（2）的一侧，阳极结构（6）设置在主体（2）的另一侧。 阳极结构（6）包括与主体（2）接触的第一组间隔开的细长导电指状物（8），并且在其每对指状物之间限定细长间隙（10）和第二组间隔细长导电指状物（ 位于包括间隔开的细长导电指状物（8）的主体（2）的表面上方。 第二组间隔开的细长导电指状物（12）的每个指状物（部分或全部）覆盖第一组间隔细长导电指状物（8）的一对相邻指状物之间的细长间隙。