公开(公告)号：HU0103631A3

公开(公告)日：2004-07-28

申请号：HU0103631

申请日：1999-06-11

Applicant: KOLARIK VLADIMIR

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/312 ,  H01J29/04 ,  H01J29/10 ,  H01J29/44 ,  H01J31/12 ,  H01J37/073 ,  H01J63/06 ,  H01J63/08 ,  H01L29/76 ,  H01L31/10 ,  H01L33/00

Abstract: A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (~1 mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (~100 V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

公开(公告)号：AU2003207866A8

公开(公告)日：2003-09-16

申请号：AU2003207866

申请日：2003-02-26

Applicant: PHILIPS INTELLECTUAL PROPERTY

Inventor： KRAUS ALBRECHT ,  BACHMANN PETER KLAUS

IPC: C23C16/01 ,  C23C16/27 ,  H01J1/46 ,  H01J9/24 ,  H01J21/10 ,  H01J61/00 ,  H01J63/02 ,  H01J63/08

Abstract: Light source (1) comprises a discharge vessel (2) filled with a gas and an electron beam source (4) located in a vacuum or in a region of low pressure. The electron beam source produces electrons (12) which enter the discharge vessel through a foil (8) having a diamond layer. An Independent claim is also included for a process for the production of the foil for the light source comprising depositing carbon atoms on a substrate (7) to form the diamond layer and back etching the substrate so that the remaining part of the substrate is molded into a frame for the foil. Preferably the diamond layer has a thickness of less than 100, especially less than 50 microns. The diamond layer has a metallic solder layer or an organic adhesive layer.

公开(公告)号：AT249094T

公开(公告)日：2003-09-15

申请号：AT99926278

申请日：1999-06-11

Applicant: VISCOR PETR ,  NIELSEN NIELS OLE ,  DELONG ARMIN ,  KOLARIK VLADIMIR

Inventor： VISCOR PETR ,  NIELSEN NIELS OLE ,  DELONG ARMIN ,  KOLARIK VLADIMIR

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/312 ,  H01J29/04 ,  H01J29/10 ,  H01J29/44 ,  H01J31/12 ,  H01J37/073 ,  H01J63/06 ,  H01J63/08 ,  H01L29/76 ,  H01L31/10 ,  H01L33/00 ,  H01J1/30

Abstract: A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (~1 mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (~100 V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

公开(公告)号：AU2002358370A1

公开(公告)日：2003-07-09

申请号：AU2002358370

申请日：2002-12-10

Applicant: LIGHTLAB AB

Inventor： FRANCKE TOM

IPC: H01J63/08 ,  H01J20060101 ,  H01J17/00 ,  H01J63/06 ,  H05B33/04 ,  H05B33/10

Abstract: An arrangement for emitting light includes a hermetically sealed casing with a window, a layer of a fluorescent substance arranged within the casing covering at least a major part of the window, an electron emitting cathode arranged within the casing, and an anode. The casing is filled with a gas suitable for electron avalanche amplification. In operation, the cathode and anode are held at an electric potential such that said emitted electrons are accelerated and avalanche amplified in the gas. The layer of the fluorescent substance is arranged to emit light through the window in response to avalanche amplified electron bombardment and/or ultraviolet light emitted from the gas.

公开(公告)号：IL139693D0

公开(公告)日：2002-02-10

申请号：IL13969399

申请日：1999-06-11

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/312 ,  H01J29/04 ,  H01J29/10 ,  H01J29/44 ,  H01J31/12 ,  H01J37/073 ,  H01J63/06 ,  H01J63/08 ,  H01L29/76 ,  H01L31/10 ,  H01L33/00 ,  H01J

Abstract: A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (~1 mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (~100 V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

公开(公告)号：HK1034358A1

公开(公告)日：2001-10-19

申请号：HK01104860

申请日：2001-07-12

Applicant: VISCOR PETR ,  NIELSEN NIELS OLE ,  DELONG ARMIN ,  KOLARIK VLADIMIR

Inventor： VISCOR PETR ,  NIELSEN NIELS OLE ,  DELONG ARMIN ,  KOLARIK VLADIMIR

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/312 ,  H01J29/04 ,  H01J29/10 ,  H01J29/44 ,  H01J31/12 ,  H01J37/073 ,  H01J63/06 ,  H01J63/08 ,  H01L29/76 ,  H01L31/10 ,  H01L33/00 ,  H01J ,  H01L

Abstract: A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (~1 mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (~100 V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

公开(公告)号：FR2759201B1

公开(公告)日：1999-09-10

申请号：FR9801324

申请日：1998-02-02

Applicant: SMITHS INDUSTRIES PLC

Inventor： NEIL ANTONY FOX ,  WANG NANG WANG

IPC: H01J1/308 ,  H01J1/304 ,  H01J1/312 ,  H01J17/06 ,  H01J61/067 ,  H01J63/02 ,  H01J63/08 ,  H01J1/30 ,  H01J61/78

公开(公告)号：FR2759201A1

公开(公告)日：1998-08-07

申请号：FR9801324

申请日：1998-02-02

Applicant: SMITHS INDUSTRIES PLC

Inventor： NEIL ANTONY FOX ,  WANG NANG WANG

IPC: H01J1/308 ,  H01J1/304 ,  H01J1/312 ,  H01J17/06 ,  H01J61/067 ,  H01J63/02 ,  H01J63/08 ,  H01J1/30 ,  H01J61/78

公开(公告)号：NL192590C

公开(公告)日：1997-10-03

申请号：NL9301314

申请日：1993-07-27

Applicant: HANLET JACQUES M

Inventor： HANLET JACQUES MARIE

IPC: H01J61/00 ,  H01J20060101 ,  H01J17/49 ,  H01J61/02 ,  H01J61/067 ,  H01J61/09 ,  H01J61/16 ,  H01J61/38 ,  H01J61/42 ,  H01J61/54 ,  H01J61/70 ,  H01J61/76 ,  H01J61/78 ,  H01J63/08 ,  H01J61/12

Abstract: An improved lighting system (10) which in the preferred embodiment includes a cathode (12) having an external surface (34) being coated with a cathode outside film (40) for emitting electrons therefrom. A first anode (14) extends internal to the cathode (12) for heating the cathode (12) to thereby emit electrons from the external surface (34). A second anode (16) is positionally located external to the enclosed cathode (12) for accelerating the electrons emitted from the cathode external surface (34). A bulb member (18) encompasses the cathode (12), the first anode (14), and the second anode (16) in a hermetic type seal. The bulb member (18) has a predetermined gas composition contained therein with the gas composition atoms being ionized by the cathode emitted electrons. The gas composition ionized atoms radiate in the ultraviolet bandwidth of the electromagnetic spectrum. The bulb member (18) is coated with a fluorescent material (20) for intercepting the ultraviolet energy responsive to the ionization of the gas composition atoms. The fluorescent material (20) radiates in the visible bandwidth of the electromagnetic spectrum to give a visible light output.

公开(公告)号：NL191346B

公开(公告)日：1995-01-02

申请号：NL8120187

申请日：1981-04-27

Applicant: HANLET JACQUES M

IPC: H01J61/00 ,  H01J20060101 ,  H01J17/49 ,  H01J61/02 ,  H01J61/067 ,  H01J61/09 ,  H01J61/16 ,  H01J61/38 ,  H01J61/42 ,  H01J61/54 ,  H01J61/70 ,  H01J61/76 ,  H01J61/78 ,  H01J63/08

Abstract: An improved lighting system (10) which in the preferred embodiment includes a cathode (12) having an external surface (34) being coated with a cathode outside film (40) for emitting electrons therefrom. A first anode (14) extends internal to the cathode (12) for heating the cathode (12) to thereby emit electrons from the external surface (34). A second anode (16) is positionally located external to the enclosed cathode (12) for accelerating the electrons emitted from the cathode external surface (34). A bulb member (18) encompasses the cathode (12), the first anode (14), and the second anode (16) in a hermetic type seal. The bulb member (18) has a predetermined gas composition contained therein with the gas composition atoms being ionized by the cathode emitted electrons. The gas composition ionized atoms radiate in the ultraviolet bandwidth of the electromagnetic spectrum. The bulb member (18) is coated with a fluorescent material (20) for intercepting the ultraviolet energy responsive to the ionization of the gas composition atoms. The fluorescent material (20) radiates in the visible bandwidth of the electromagnetic spectrum to give a visible light output.