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公开(公告)号：WO2016085171A1
公开(公告)日：2016-06-02
申请号：PCT/KR2015/012213
申请日：2015-11-13
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： BYUN, Sang-Hwan , KIM, Jong-Rak , KO, Ik-Hwan
CPC classification number: B01D53/885 , A61L9/205 , A61L2209/14 , B01D53/86 , B01D2255/20707 , B01D2255/802 , B01D2257/90 , B01D2258/06 , B01D2259/804
Abstract: Disclosed herein is an air purifier capable of removing harmful gas and performing deodorization through a photocatalytic reaction, by providing an installation structure of a photocatalytic filter and a light source therein, even when the air purifier has a flat shape. The air purifier that includes a photocatalytic filter (70) and a light source (62) for activating the photocatalytic filter, includes a body housing (10) including a dust collection filter (40) accommodated in a front face thereof, and a fan (20) installed in a rear thereof, a cover (30) installed in a front of the body housing (10) to define a hollow section together with the body housing, and an intake port (32) for allowing a space outside the air purifier to communicate with the hollow section.
Abstract translation: 本文公开了一种空气净化器，即使当空气净化器具有扁平形状时，也可以通过提供光催化过滤器和光源的安装结构，通过光催化反应去除有害气体并进行除臭。 包括光催化过滤器（70）和用于活化光催化过滤器的光源（62）的空气净化器包括：主体壳体（10），包括容纳在其前表面的集尘过滤器（40）和风扇（ 20），安装在所述主体壳体（10）的前部以与所述主体壳体一起限定中空部分的盖（30）和用于允许空气净化器外部的空间的进气口（32） 与中空部分进行通信。
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公开(公告)号：WO2016076637A1
公开(公告)日：2016-05-19
申请号：PCT/KR2015/012153
申请日：2015-11-12
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： KIM, Chang Yeon , SON, Sung Su , LEE, Joon Sup , CHAE, Jong Hyeon
IPC: H01L33/64
CPC classification number: H01L33/382 , H01L33/0079 , H01L33/06 , H01L33/24 , H01L33/486 , H01L33/62 , H01L33/647 , H01L2224/16225 , H01L2933/0016
Abstract: Disclosed herein is a light emitting device. The light emitting device includes a light emitting structure; a first contact electrode and a second contact electrode; an insulation layer; a first bulk electrode and a second bulk electrode disposed on the light emitting structure; an insulation support layer covering side surfaces of the first and second bulk electrodes and portions of upper surfaces of the first and second bulk electrodes and including first and second openings; and a first pad electrode and a second pad electrode at least partially filling the first and second openings, respectively, wherein exposed regions of the upper surfaces of the first and second bulk electrodes exposed through the first and second opening are smaller than horizontal cross-sectional areas of the first and second bulk electrodes, respectively.
Abstract translation: 本文公开了一种发光器件。 发光器件包括发光结构; 第一接触电极和第二接触电极; 绝缘层; 设置在所述发光结构上的第一体电极和第二体电极; 绝缘支撑层，其覆盖第一和第二体电极的侧表面和第一和第二体电极的上表面的部分，并且包括第一和第二开口; 以及分别至少部分地填充第一和第二开口的第一焊盘电极和第二焊盘电极，其中通过第一和第二开口暴露的第一和第二体电极的上表面的暴露区域小于水平横截面 分别是第一和第二体电极的区域。
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公开(公告)号：WO2016052936A1
公开(公告)日：2016-04-07
申请号：PCT/KR2015/010136
申请日：2015-09-24
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： PARK, Seung Chul , AHN, Soon Ho , LIM, Michael
IPC: H01L33/14
CPC classification number: H01L33/007 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/0025 , H01L33/16
Abstract: A light emitting device and a method of manufacturing the same. The method includes: growing a first nitride semiconductor layer on a substrate having a non-polar or semi-polar crystal plane; growing an active layer on the first nitride semiconductor layer; and growing a second nitride semiconductor layer on the active layer, wherein growing the second nitride semiconductor layer includes sequentially growing a p-type semiconductor layer, an undoped layer, a p++-type semiconductor layer, and a P++ InGaN contact layer, and the undoped layer, the p++-type semiconductor layer and the P++ InGaN contact layer may be grown in a nitrogen atmosphere.
Abstract translation: 发光器件及其制造方法。 该方法包括：在具有非极性或半极性晶面的基板上生长第一氮化物半导体层; 在第一氮化物半导体层上生长活性层; 以及在所述有源层上生长第二氮化物半导体层，其中生长所述第二氮化物半导体层包括依次生长p型半导体层，未掺杂层，p ++型半导体层和P ++ InGaN接触层，并且所述未掺杂 p ++型半导体层和P ++ InGaN接触层可以在氮气气氛中生长。
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公开(公告)号：WO2016052929A1
公开(公告)日：2016-04-07
申请号：PCT/KR2015/010113
申请日：2015-09-24
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： SHIN, Chan Seob
IPC: H01L33/42
Abstract: Disclosed is a light emitting diode. The light emitting diode includes a light emitting structure including a first conductive type semiconductor layer, an active layer disposed on the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed on the active layer; and a first transparent electrode layer disposed on the light emitting structure and having a plurality of air gaps; a second transparent electrode layer disposed on the first transparent electrode layer and having a plurality of air gaps formed therein, the number or size of the air gaps formed in the second transparent electrode layer being greater or larger than that of the air gaps formed in the first transparent electrode layer; and an electrode disposed on the second transparent electrode layer; and an electrode disposed on the second transparent electrode layer.
Abstract translation: 公开了一种发光二极管。 发光二极管包括发光结构，其包括第一导电类型半导体层，设置在第一导电类型半导体层上的有源层和设置在有源层上的第二导电类型半导体层; 以及设置在所述发光结构上并具有多个气隙的第一透明电极层; 设置在第一透明电极层上并具有形成在其中的多个气隙的第二透明电极层，形成在第二透明电极层中的气隙的数量或尺寸大于或大于形成在第二透明电极层中的气隙的数量或尺寸 第一透明电极层; 以及设置在所述第二透明电极层上的电极; 以及设置在所述第二透明电极层上的电极。
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85.发明申请METHOD OF FABRICATING LIGHTING EMITTING DEVICE AND LIGHTING EMITTING DEVICE FABRICATED BY THE SAME 审中-公开制造照明发光装置的方法及其制造的照明发光装置
公开(公告)号：WO2016047932A1
公开(公告)日：2016-03-31
申请号：PCT/KR2015/009172
申请日：2015-09-01
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： JANG, Jong Min , CHAE, Jong Hyeon , SUH, Dae Woong
IPC: H01L33/36
CPC classification number: H01L51/504 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/62 , H01L51/442
Abstract: A method of fabricating a light emitting device using a wafer level package process and a light emitting device fabricated by the same are disclosed. The light emitting device has improved heat dissipation to prevent damage by heat, thereby achieving improvement in reliability and luminous efficacy. In addition, the light emitting device has a small difference in coefficient of thermal expansion and thus can reduce stress applied to a light emitting structure to prevent damage to the light emitting structure, thereby achieving improvement in reliability and luminous efficacy.
Abstract translation: 公开了使用晶片级封装工艺制造发光器件的方法和由其制造的发光器件。 发光装置具有改善的散热性以防止热量损坏，从而实现可靠性和发光效率的提高。 此外，发光装置的热膨胀系数差异小，因此可以减少施加到发光结构的应力，以防止损坏发光结构，从而实现可靠性和发光效率的提高。
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Patent Agency Ranking
公开(公告)号：WO2014142493A1
公开(公告)日：2014-09-18
申请号：PCT/KR2014/001963
申请日：2014-03-10
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： KIM, Jong Rack , SUH, Daewoong , PARK, Jung Youl
CPC classification number: H04M1/17 , A45C15/00 , A45C2011/002 , A61L2/10 , A61L2202/16 , A61L2202/18 , H04B1/3888 , H04M1/04 , H04W4/80
Abstract: Disclosed herein is a sterilization apparatus for a portable terminal, including a casing configured to receive the portable terminal and a UV LED provided in the casing. The sterilization apparatus can be always carried along with a portable terminal because the sterilization apparatus is constructed using a casing or a cover attached to the portable terminal. Accordingly, the portable terminal can be easily sterilized while in motion without being limited to the place.
Abstract translation: 这里公开了一种用于便携式终端的灭菌装置，其包括被配置为接收便携式终端的壳体和设置在壳体中的UV LED。 杀菌装置总是可以携带便携式终端携带，因为消毒装置是使用附接到便携式终端的外壳或盖构成的。 因此，便携式终端在运动时可以容易地消毒，而不限于该地方。
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公开(公告)号：WO2014142452A1
公开(公告)日：2014-09-18
申请号：PCT/KR2014/001572
申请日：2014-02-26
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： KIM, Jong Rack , SUH, Dae Wong , LEE, Seong Min , KO, Ik Hwan
CPC classification number: A61L2/10 , A61L2202/16 , H02J7/0027 , H02J7/0044 , H02J7/0045 , H02J7/0052
Abstract: A mobile phone charger with a sterilization UV LED may include: a charger case having a space formed therein and including a mobile phone stand formed at the front surface thereof; and one or more first UV LEDs installed at one side of the space of the charger case.
Abstract translation: 具有灭菌UV LED的手机充电器可以包括：具有形成在其中的空间的充电器壳体，并且包括在其前表面处形成的移动电话支架; 以及安装在充电器壳体的空间的一侧的一个或多个第一UV LED。
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公开(公告)号：WO2014116066A1
公开(公告)日：2014-07-31
申请号：PCT/KR2014/000725
申请日：2014-01-24
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： KIM, Jong Rack , SON, Young Hwan , LEE, Seong Min , YI, Jae Seon
Abstract: The present invention relates to an air cleaning apparatus comprising a UVLED, which can efficiently clean air flowing in tubes by an effective combination of the UVLED and a photocatalyst and can effectively clean air flowing in a duct by enhancing the cleaning function or increasing the number of cleaning steps when the concentration of harmful substances increases. The air cleaning apparatus includes: a case comprising an inlet configured to introduce air, an outlet configured to discharge air, and a duct disposed between the air inlet and the air outlet; a photocatalyst unit disposed in the duct; and a UVLED module disposed in the duct and including a plurality of first UVLEDs arranged to irradiate UV light from the side of the inlet to the side of the outlet.
Abstract translation: 本发明涉及一种包括UVLED的空气净化装置，其可以通过UVLED和光催化剂的有效组合有效地清洁在管中流动的空气，并且可以通过增强清洁功能或增加清洁功能来有效地清洁在管道中流动的空气 当有害物质浓度增加时，清洁步骤。 空气净化装置包括：壳体，其包括被配置为引入空气的入口，被配置为排出空气的出口以及设置在空气入口和空气出口之间的管道; 设置在所述管道中的光催化剂单元; 以及UVLED模块，其布置在所述管道中并且包括多个第一UVLED，所述第一UVLED布置成从所述入口侧向所述出口的一侧照射UV光。
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公开(公告)号：WO2013191406A1
公开(公告)日：2013-12-27
申请号：PCT/KR2013/005124
申请日：2013-06-11
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： JUNG, Jung Whan , CHOI, Seung Kyu , KIM, Chae Hon
IPC: H01L33/14
Abstract: A light emitting device having an electron blocking layer is disclosed. The light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, and an electron blocking layer disposed between the active layer and the p-type semiconductor layer. The electron blocking layer includes first, second, third and fourth layers, wherein the first layer is disposed closer to the active layer than the second to fourth layers and has a wider band gap than the second to fourth layers, the second layer adjoins the first layer, and the third layer is disposed between the second layer and the fourth layer and has a narrower band gap than the second and fourth layers. Thus, the light emitting device has improved hole injection efficiency and can efficiently prevent electron overflow.
Abstract translation: 公开了一种具有电子阻挡层的发光器件。 发光器件包括n型半导体层，p型半导体层，设置在n型半导体层和p型半导体层之间的有源层，以及设置在有源层和p型半导体层之间的电子阻挡层 p型半导体层。 电子阻挡层包括第一层，第二层，第三层和第四层，其中第一层被设置成比第二层至第四层更靠近有源层，并且具有比第二层至第四层更宽的带隙，第二层毗邻第一层 层，第三层设置在第二层和第四层之间，并且具有比第二层和第四层窄的带隙。 因此，发光器件具有改善的空穴注入效率并且可以有效地防止电子溢出。
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公开(公告)号：WO2023038457A1
公开(公告)日：2023-03-16
申请号：PCT/KR2022/013520
申请日：2022-09-08
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： KIM, Chae Hon
Abstract: A light emitting diode and a method of fabricating the same are provided. The light emitting diode according to exemplary embodiments includes a lower n-type semiconductor layer, an active layer, a p-type semiconductor layer, a high-concentration n-type semiconductor layer, and an upper n-type semiconductor layer. The high concentration n-type semiconductor layer can have a higher n-type doping concentration than that of the lower or upper n-type semiconductor layer. Oxygen concentrations on a lower surface and an upper surface of the high-concentration n-type semiconductor layer may be substantially same. An electron blocking layer may be interposed between the active layer and the p-type semiconductor layer.
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