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    LIGHT EMITTING DEVICE
    1.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号：WO2016076637A1

    公开(公告)日：2016-05-19

    申请号：PCT/KR2015/012153

    申请日：2015-11-12

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： KIM, Chang Yeon ,  SON, Sung Su ,  LEE, Joon Sup ,  CHAE, Jong Hyeon

    IPC: H01L33/64

    CPC classification number: H01L33/382 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/24 ,  H01L33/486 ,  H01L33/62 ,  H01L33/647 ,  H01L2224/16225 ,  H01L2933/0016

    Abstract: Disclosed herein is a light emitting device. The light emitting device includes a light emitting structure; a first contact electrode and a second contact electrode; an insulation layer; a first bulk electrode and a second bulk electrode disposed on the light emitting structure; an insulation support layer covering side surfaces of the first and second bulk electrodes and portions of upper surfaces of the first and second bulk electrodes and including first and second openings; and a first pad electrode and a second pad electrode at least partially filling the first and second openings, respectively, wherein exposed regions of the upper surfaces of the first and second bulk electrodes exposed through the first and second opening are smaller than horizontal cross-sectional areas of the first and second bulk electrodes, respectively.

    Abstract translation: 本文公开了一种发光器件。 发光器件包括发光结构; 第一接触电极和第二接触电极; 绝缘层; 设置在所述发光结构上的第一体电极和第二体电极; 绝缘支撑层，其覆盖第一和第二体电极的侧表面和第一和第二体电极的上表面的部分，并且包括第一和第二开口; 以及分别至少部分地填充第一和第二开口的第一焊盘电极和第二焊盘电极，其中通过第一和第二开口暴露的第一和第二体电极的上表面的暴露区域小于水平横截面 分别是第一和第二体电极的区域。

    LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME
    2.
    发明申请
    LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME 审中-公开
    发光二极管，其制造方法和具有该发光二极管的LED模块

    公开(公告)号：WO2015016561A1

    公开(公告)日：2015-02-05

    申请号：PCT/KR2014/006904

    申请日：2014-07-29

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： CHAE, Jong Hyeon ,  LEE, Joon Sup ,  SUH, Daewoong ,  KANG, Min Woo ,  KIM, Hyun A ,  ROH, Won Young ,  JANG, Jong Min

    IPC: H01L33/62

    CPC classification number: H01L33/14 ,  H01L33/005 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2933/0016

    Abstract: Disclosed are a light emitting diode (LED), an LED module including the same, and a method of fabricating the same. The light emitting diode includes a first conductive-type semiconductor layer; a second conductive-type semiconductor layer; an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; a first electrode pad region electrically connected to the first conductive-type semiconductor layer; a second electrode pad region electrically connected to the second conductive-type semiconductor layer; and a spark gap formed between a first leading end electrically connected to the first electrode pad region and a second leading end electrically connected to the second electrode pad region. The spark gap can achieve electrostatic discharge protection of the light emitting diode.

    Abstract translation: 公开了一种发光二极管（LED），包括该发光二极管的LED模块及其制造方法。 发光二极管包括第一导电型半导体层; 第二导电型半导体层; 介于所述第一导电型半导体层和所述第二导电型半导体层之间的有源层; 电连接到第一导电型半导体层的第一电极焊盘区域; 电连接到第二导电型半导体层的第二电极焊盘区域; 以及形成在电连接到第一电极焊盘区域的第一前端与电连接到第二电极焊盘区域的第二前端之间形成的火花间隙。 火花隙可以实现发光二极管的静电放电保护。

    LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DIODE
    3.
    发明公开
    LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DIODE 审中-公开
    发光元件和发光二极管

    公开(公告)号：EP3258507A2

    公开(公告)日：2017-12-20

    申请号：EP16749413.7

    申请日：2016-02-04

    Applicant: Seoul Viosys Co., Ltd

    Inventor： KIM, Jong Kyu ,  LEE, So Ra ,  YOON, Yeo Jin ,  KIM, Jae Kwon ,  LEE, Joon Sup ,  KANG, Min Woo ,  OH, Se Hee ,  KIM, Hyun A ,  LIM, Hyoung Jin

    IPC: H01L33/64 ,  H01L33/38 ,  H01L33/08 ,  H01L33/58 ,  H01L33/60

    CPC classification number: H01L27/156 ,  H01L33/08 ,  H01L33/36 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2933/0016 ,  H01L2924/00012

    Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

    Abstract translation: 发光元件包括发光结构，该发光结构包括第一导电半导体层，第二导电半导体层以及插入在第一导电半导体层和第二导电半导体层之间的有源层; 第一接触电极和第二接触电极，位于所述发光结构上，并分别与所述第一导电半导体层和所述第二导电半导体层欧姆接触; 覆盖第一接触电极和第二接触电极的一部分以绝缘第一接触电极和第二接触电极的绝缘层; 电连接到所述第一接触电极和所述第二接触电极中的每一个的第一电极焊盘和第二电极焊盘; 以及辐射焊盘，形成在绝缘层上，并辐射从发光结构产生的热量。

    LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING SAME
    4.
    发明公开
    LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING SAME 有权
    LICHTEMITTIERENDE DIODE

    公开(公告)号：EP2757598A2

    公开(公告)日：2014-07-23

    申请号：EP12832213.8

    申请日：2012-09-14

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： CHAE, Jong Hyeon ,  JANG, Jong Min ,  ROH, Won Young ,  SUH, Dae Woong ,  CHO, Dae Sung ,  LEE, Joon Sup ,  LEE, Kyu Ho ,  IN, Chi Hyun

    IPC: H01L33/36 ,  H01L33/22 ,  H01L33/12

    CPC classification number: H01L33/405 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/12 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058

    Abstract: The present invention relates to a light emitting diode and a method of manufacturing same. The light emitting diode includes: a first conductive semiconductor layer; a plurality of mesas that are disposed spaced apart from one another on the first conductive semiconductor layer, each mesa including an active layer and a second conductive semiconductor layer; reflective electrodes that are respectively disposed on the plurality of mesas and come into ohmic contact with the second conductive semiconductor layer; openings that cover the plurality of mesas and the first conductive semiconductor layer, are electrically insulated from the mesas, and expose the reflective electrodes to the upper region of each mesa; and a current spreading layer that comes into ohmic contact with the first conductive semiconductor layer. Thus, a light emitting diode that improves current spreading performance may be provided.

    Abstract translation: 本发明涉及一种发光二极管及其制造方法。 发光二极管包括：第一导电半导体层; 在所述第一导电半导体层上彼此间隔开设置的多个台面，每个台面包括有源层和第二导电半导体层; 反射电极分别设置在多个台面上并与第二导电半导体层欧姆接触; 覆盖多个台面和第一导电半导体层的开口与台面电绝缘，并将反射电极暴露于每个台面的上部区域; 以及与第一导电半导体层欧姆接触的电流扩散层。 因此，可以提供改善电流扩展性能的发光二极管。

    LIGHT EMITTING DIODE CHIP
    5.
    发明公开
    LIGHT EMITTING DIODE CHIP 审中-实审

    公开(公告)号：EP4340049A2

    公开(公告)日：2024-03-20

    申请号：EP24154569.8

    申请日：2018-09-14

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： OH, Se Hee ,  KIM, Jae Kwon ,  KIM, Jong Kyu ,  KIM, Hyun A ,  LEE, Joon Sup

    IPC: H01L33/20

    Abstract: A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip according to one embodiment includes; a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa including an active layer and a second conductivity type semiconductor layer, wherein the mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer; a side coating layer(s) covering a side surface of the mesa; and a reflection structure spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.

    LIGHT EMITTING DIODE
    8.
    发明公开
    LIGHT EMITTING DIODE 审中-公开

    公开(公告)号：EP3926698A1

    公开(公告)日：2021-12-22

    申请号：EP21185027.6

    申请日：2012-09-14

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： CHAE, Jong Hyeon ,  JANG, Jong Min ,  ROH, Won Young ,  SUH, Dae Woong ,  CHO, Dae Sung ,  LEE, Joon Sup ,  LEE, Kyu Ho ,  IN, Chi Hyun

    IPC: H01L33/36 ,  H01L33/22 ,  H01L33/40 ,  H01L33/08 ,  H01L33/20

    Abstract: The invention relates to a a light emitting diode. A light emitting structure comprises a first conductivity type semiconductor layer (110), an active layer (120) and a second conductivity type semiconductor layer (130). Mesa-etched areas (150) are formed from the surface of the second conductivity type semiconductor layer (130) to the first conductivity type semiconductor layer (110). A reflective electrode (140) is formed on the second conductivity type semiconductor layer (130) and includes a reflective metal layer (142), a barrier metal layer (144) and a stress relieving layer (143) formed between the reflective metal layer (142) and the barrier metal layer (144), wherein the stress relieving layer (143) has a coefficient of thermal expansion between the coefficient of thermal expansion of the reflective metal layer (142) and the coefficient of thermal expansion of the barrier metal layer (144). A lower insulation layer (200) covers an overall surface of the structure formed by the first conductivity type semiconductor layer (110), the active layer (120), the second conductivity type semiconductor layer (130), the mesa-etched areas (150) and the reflective electrode (140), with the lower insulation layer (200) allowing an upper surface of the reflective electrode (140) to be partially exposed therethrough and further allowing the surface of the first conductivity type semiconductor layer (110) to be exposed therethrough in the mesa-etched areas (150). A current spreading layer (210) is formed on the lower insulation layer (200) covering the first conductivity type semiconductor layer (110) and is electrically connected to the first conductivity type semiconductor layer (110). An upper insulation layer (220) is formed on the current spreading layer (210), with both the current spreading layer (210) and the reflective electrode (140) being partially exposed through the upper insulation layer (220). A first pad (230) is electrically connected to the current spreading layer (210) exposed through the upper insulation layer (220), and a second pad (240) is electrically connected to the reflective electrode (140) exposed through the upper insulation layer (220).

    LIGHT-EMITTING DIODE
    10.
    发明公开
    LIGHT-EMITTING DIODE 审中-公开

    公开(公告)号：EP3920245A1

    公开(公告)日：2021-12-08

    申请号：EP19913227.5

    申请日：2019-12-06

    Applicant: Seoul Viosys Co., Ltd

    Inventor： KIM, Jae Kwon ,  HEO, Min Chan ,  KIM, Kyoung Wan ,  KIM, Jong Kyu ,  KIM, Hyun A ,  LEE, Joon Sup

    IPC: H01L33/38 ,  H01L33/62 ,  H01L33/10 ,  H01L33/60 ,  H01L33/36 ,  H01L27/15

    Abstract: A light emitting diode according to an exemplary embodiment includes: a first conductivity type semiconductor layer; a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer, in which the active layer generates light having a peak wavelength of about 500 nm or less, the lower insulation layer includes a distributed Bragg reflector, the lower insulation layer has a high reflection wavelength band continuously exhibiting reflectances of 90% or more in a wavelength range of the visible region, reflectances in a first wavelength region including a peak wavelength of light generated in the active layer within the high reflection wavelength band are higher than those in a second wavelength region within a range of 554 nm to 700 nm, and the first wavelength region is located in a region of wavelengths shorter than 554 nm.

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