公开(公告)号：KR1020020045657A

公开(公告)日：2002-06-20

申请号：KR1020000074916

申请日：2000-12-09

Applicant: 삼성전자주식회사

Inventor： 선호원 ,  이강윤 ,  김정석 ,  신동원 ,  조태희

IPC: H01L21/28

CPC classification number: H01L21/76804 ,  H01L21/76877 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PURPOSE: A metal contact structure of a semiconductor device is provided to prevent a void or key hole by broadening the upper portion of a contact hole, and to eliminate a problem of an ununiform etch-back process by using a barrier metal layer as an etch stop layer when the metal deposited for filling the contact hole is etched back. CONSTITUTION: An interlayer dielectric(130) is formed on a substrate(110) where a lower conductive layer(120) is formed. The interlayer dielectric is etched to form the contact hole exposing the lower conductive layer, wherein the diameter of the upper portion of the contact hole is broader than that of the lower portion of the contact hole. The barrier metal layer(150) is formed on the entire surface of the interlayer dielectric including the inside of the contact hole. The first metal is deposited on the barrier metal layer, but the inside of the contact is not completely filled with the first metal. The first metal is etched back while the barrier metal layer is used as an etch stop layer, so that a part of the first metal is left inside the contact hole and all of the first metal outside the contact hole is completely removed. The second metal is deposited on the resultant structure.

Abstract translation: 目的：提供半导体器件的金属接触结构，通过拓宽接触孔的上部来防止空隙或键孔，并且通过使用阻挡金属层作为蚀刻来消除不均匀的回蚀处理的问题 当沉积用于填充接触孔的金属被回蚀时，停止层。 构成：在形成有下导电层（120）的基板（110）上形成层间电介质（130）。 蚀刻层间电介质以形成露出下导电层的接触孔，其中接触孔的上部的直径比接触孔的下部的直径更宽。 阻挡金属层（150）形成在包括接触孔内部的层间电介质的整个表面上。 第一金属沉积在阻挡金属层上，但触点的内部未完全填充第一金属。 第一金属被蚀刻回来，而阻挡金属层用作蚀刻停止层，使得第一金属的一部分留在接触孔内部，并且接触孔外部的所有第一金属被完全去除。 第二金属沉积在所得结构上。