公开(公告)号：KR1020090012475A

公开(公告)日：2009-02-04

申请号：KR1020070076330

申请日：2007-07-30

Applicant: 연세대학교 산학협력단

Inventor： 고대홍 ,  김상연 ,  손현철 ,  조만호

IPC: B82B3/00 ,  B82Y40/00

CPC classification number: H01L21/02603 ,  B82Y40/00 ,  C01B33/00 ,  C01G17/00 ,  C01P2004/16 ,  H01L21/30604

Abstract: A manufacturing method of silicon-germanium nano wire is provided to have a high component content of pure germanium nano wire or germanium by controlling oxidation time etc. under a proper oxidation condition and exhausting silicon of the silicon-germanium nano wire. A manufacturing method of silicon-germanium nano wire(30) of which a component content of pure germanium nano wire or germanium is high comprises steps of: (a) providing the nano wire(10) consisting of silicon-germanium; (b) putting the nano wire under an oxidizing atmosphere and forming a silicon oxide film(20) on the nano wire; and (c) removing the silicon oxide film formed at the step (b). In the step (b), a silicone concentration of the silicon-germanium nano wire is controlled by controlling oxidation time and growing a silicon oxide film.

Abstract translation: 提供硅 - 锗纳米线的制造方法，通过在适当的氧化条件下控制氧化时间等，并通过硅 - 锗纳米线的排出硅，使纯锗纳米线或锗的成分含量高。 纯锗纳米线或锗的成分含量高的硅 - 锗纳米线（30）的制造方法包括以下步骤：（a）提供由硅 - 锗组成的纳米线（10）; （b）将纳米线放在氧化气氛下并在纳米线上形成氧化硅膜（20）; 和（c）除去在步骤（b）中形成的氧化硅膜。 在步骤（b）中，通过控制氧化时间和生长氧化硅膜来控制硅 - 锗纳米线的硅氧烷浓度。

公开(公告)号：KR1020090012474A

公开(公告)日：2009-02-04

申请号：KR1020070076328

申请日：2007-07-30

Applicant: 연세대학교 산학협력단

Inventor： 고대홍 ,  김상연 ,  손현철 ,  조만호

IPC: B82B3/00 ,  B82Y40/00

CPC classification number: H01L29/0665 ,  B82Y40/00 ,  C01B33/00 ,  C01P2004/16 ,  H01L21/02603

Abstract: A multi-layered nano wire is provided to implement electric component like a transistor having a fast response speed by enhancing mobility of electronics or a hole by a strain by distance difference between surfaces or lattices and to increase availability of the nano wire device. A multi-layered nano wire contains a first nano wire layer consisting of silicon or silicon-germanium and a different kind of second nano wire layer(50) different with the first nano wire layer grown on the first nano wire layer through an epitaxial growth technique. A mobility of electronics or a hole is improved by a strain due to difference of distance between surfaces or lattices of the first nano wire layer and the second nano wire layer. The second nano wire layer is made of silicon-germanium, silicon, or silicon-carbon.

Abstract translation: 提供了一种多层纳米线，以通过利用由表面或格子之间的距离差引起的应变增强电子器件或孔的移动性，并且提高纳米线器件的可用性，来实现具有快速响应速度的电子部件。 多层纳米线包含由硅或硅 - 锗组成的第一纳米线层和不同于通过外延生长技术在第一纳米线层上生长的第一纳米线层的不同种类的第二纳米线层（50） 。 由于第一纳米线层和第二纳米线层的表面或晶格之间的距离的差异，电子或孔的迁移率得到改善。 第二纳米线层由硅 - 锗，硅或硅 - 碳制成。