公开(公告)号：KR100363557B1

公开(公告)日：2002-12-05

申请号：KR1020000083664

申请日：2000-12-28

Applicant: 제일모직주식회사

Inventor： 노현수 ,  이길성 ,  김석진 ,  이재석

IPC: H01L21/306

Abstract: 본 발명은 실리콘 웨이퍼 연마용 슬러리 및 이를 이용한 경면연마 방법에 관한 것으로, 보다 상세하게는
(1)평균 입경이 10~200nm인 단분산 실리카 0.25~20.00중량%,
(2)분자량이 10만~100만인 셀룰로오스 0.02~2.00중량%,
(3)알킬페닐비이온 계면활성제 0.01~0.50중량%,
(4)질소화 유기염 0.10~0.50중량%,
(5)pH 조절제 1.00~5.00중량% 및
(6)탈이온수 73.00~98.60중량%
를 포함하는 실리콘 웨이퍼 연마용 슬러리 및 상기 연마용 슬러리를 중간연마 단계에 사용하는 것을 특징으로 하는 다단계 경면연마 방법에 관한 것이며, 본 발명의 연마용 슬러리를 사용하여 경면연마 공정을 수행하면 SP1 결함 발생율이 현저히 감소되므로, 고품질의 반도체용 실리콘 웨이퍼를 제공할 수 있다.

公开(公告)号：KR1020020048673A

公开(公告)日：2002-06-24

申请号：KR1020000077893

申请日：2000-12-18

Applicant: 제일모직주식회사

Inventor： 김석진 ,  이길성 ,  이재석 ,  노현수

IPC: C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1463 ,  C23F3/00 ,  H01L21/3212 ,  H01L21/7684

Abstract: PURPOSE: Provided are a composition for cmp which can prevent slurry from forming large particles during CMP process thereby inhibiting or minimizing occurrence of μ-scratch upon polishing. CONSTITUTION: The CMP composition includes 0.1 to 50 wt% of deionized water, 50 to 99.9 wt% of metal oxide microparticles and 0.1 to 1000 ppm of tetraethylammonium fluoro alkyl sulfonate of the formula 1, in which n is an integer of 3 to 30. The metal oxide may be at least one selected from the group consisting of silica, alumina, ceria, zirconia and titania. The metal oxide microparticles have an average primary particle size of 10 to 100 nm and an average secondary particle size of 50 to 250 nm. By using the CMP composition, it is possible to reduce occurrence of μ-scratch upon polishing of semiconductor wafers.

Abstract translation: 目的：提供一种用于cmp的组合物，其可以防止在CMP过程中浆料形成大颗粒，从而抑制或最小化抛光时的μ划痕的发生。 构成：CMP组合物包含0.1〜50重量％的去离子水，50〜99.9重量％的金属氧化物微粒和0.1〜1000ppm的式1的氟化烷基磺酸四乙基铵，其中n为3〜30的整数。 金属氧化物可以是选自二氧化硅，氧化铝，二氧化铈，氧化锆和二氧化钛中的至少一种。 金属氧化物微粒的平均一次粒径为10〜100nm，平均二次粒径为50〜250nm。 通过使用CMP组合物，可以减少半导体晶片研磨时的μ划痕的发生。

公开(公告)号：KR1020020047418A

公开(公告)日：2002-06-22

申请号：KR1020000075807

申请日：2000-12-13

Applicant: 제일모직주식회사

Inventor： 이재석 ,  이길성 ,  김석진 ,  노현수

IPC: H01L21/304

Abstract: PURPOSE: A slurry for polishing metal layers of semiconductor devices is provided to restrain decomposition of hydrogen peroxide by adding some 1-hydroxyethylene-1,1-diphosphonic acid. CONSTITUTION: A slurry for polishing metal layers of semiconductor devices is composed of a polishing agent having in the range of 0.10-10.00 weight%, an oxygenated water having in the range of 1.00-3.00 weight%, a ferrous nitrate having in the range of 0.03-0.10 weight%, an 1-hydroxyethylene-1,1-diphosphonic acid having in the range of 0.001-0.01 weight%, a pH controlling agent having in the range of 0.05-0.20 weight%, and a deionized water having in the range of 87.00-95.00 weight%.

Abstract translation: 目的：提供一种用于抛光半导体器件的金属层的浆料，以通过加入一些1-羟基亚乙基-1,1-二膦酸来抑制过氧化氢的分解。 构成：用于抛光半导体器件的金属层的浆料由0.10-10.00重量％范围内的氧化水，1.00-3.00重量％范围内的氧化水，硝酸亚铁的范围内的抛光剂组成， 0.03-0.10重量％，0.001-0.01重量％范围内的1-羟基亚乙基-1,1-二膦酸，0.05-0.20重量％范围内的pH控制剂，以及在 范围为87.00-95.00重量％。