公开(公告)号：JPS6440841A

公开(公告)日：1989-02-13

申请号：JP19656887

申请日：1987-08-05

Applicant: CANON KK

Inventor： AOIKE TATSUYUKI ,  SANO MASAFUMI ,  YOSHINO TOSHIHITO ,  KARIYA TOSHIMITSU ,  NIINO HIROAKI

IPC: G03G5/08 ,  G03G5/082 ,  H01L31/0248

Abstract: PURPOSE:To improve adhesion between an upper layer and a lower layer, to enhance durability and absorption efficiency of long wave-length light, such as semiconductor laser beams, and to prevent interference by incorporating Ge or/and Sn in the layer region of the upper layer in contact with the lower layer. CONSTITUTION:The photorecepive member 100 is obtained by laminating on an Al type conductive supporting body a 101 photoreceptive layer 102 composed of the lower layer 103 and the upper layer 104 made of a nonmonocrystalline material containing Si as a base and H or/and halogen and having the layer region in contact with the layer 103, containing Ge or/and Sn. The lower layer 103 is made of an inorganic material containing at least Al, Si, H, and Mg, and provided with a layer region containing Al, Si, and H in a nonuniform distribution in the layer thickness direction, and Mg, and Ge to be added when needed, or the like may be uniform or nonuniform in the layer thickness direction in the layer 103.

公开(公告)号：JPS63276063A

公开(公告)日：1988-11-14

申请号：JP11216287

申请日：1987-05-07

Applicant: CANON KK

Inventor： AOIKE TATSUYUKI ,  SANO MASAFUMI ,  YOSHINO TOSHIHITO ,  KARIYA TOSHIMITSU ,  NIINO HIROAKI

IPC: G03G5/08 ,  G03G5/082 ,  H01L31/0248 ,  H01L31/08

Abstract: PURPOSE:To improve overall characteristics by consisting a photoreceptive layer of a lower layer which has the part contg. an aluminum atom, silicon atom and hydrogen atom in the distribution state nonuniform in the layer thickness direction and an upper layer which is constituted of a non-single crystalline material. CONSTITUTION:This photoreceptive member 100 has the photoreceptive layer 102 having the layer constitution consisting of the lower layer 103 which is constituted of AlSiH and has the part contg. the aluminum atom (Al), the silicon atom (Si) and the hydrogen atom (H) in the distribution state nonuniform in the layer thickness direction and the upper layer 104 which is constituted of the non-single crystalline material [Non-Si(H, X)] basically consisting of the silicon atom (Si) and contg. at least either of the hydrogen atom (H) and halogen atom (X) on an aluminum base 101. The upper layer 104 has a free surface 105. Particularly the excellent electrical characteristics, optical characteristics, photoconductive characteristics, image characteristics, durability and used environment characteristics are thereby obtd.

公开(公告)号：JPS63276060A

公开(公告)日：1988-11-14

申请号：JP11215987

申请日：1987-05-07

Applicant: CANON KK

Inventor： AOIKE TATSUYUKI ,  SANO MASAFUMI ,  YOSHINO TOSHIHITO ,  KARIYA TOSHIMITSU ,  NIINO HIROAKI

IPC: G03G5/08 ,  G03G5/082 ,  H01L31/0248 ,  H01L31/08

Abstract: PURPOSE:To improve overall characteristics by consisting a photoreceptive layer, successively from a base side, of a lower layer which has the part contg. an aluminum atom, silicon atom and hydrogen atom in the distribution state nonuniform in the layer thickness direction and an upper layer which contains at atom to control conductivity in the layer region in contact with the lower layer. CONSTITUTION:This photoreceptive member 10 has the photoreceptive layer 102 having the layer constitution consisting of the lower layer 103 which is constituted of AlSiH and has the part contg. the aluminum atom (Al), the silicon atom (Si) and the hydrogen atom (H) in the distribution state nonuniform in the layer thickness direction and the upper layer 104 which is constituted of Non-Si(H, X) and contains the atom (M) to control the conductivity in the layer region in contact with the lower layer 103 on an aluminum base 101. The upper layer 104 has a free surface 105. Particularly the photoconductive characteristics, image characteristics, durability and use environment characteristics are thereby obtd.

公开(公告)号：JPS63234514A

公开(公告)日：1988-09-29

申请号：JP6807287

申请日：1987-03-24

Applicant: CANON KK

Inventor： SANO MASAFUMI ,  KANAI MASAHIRO

IPC: H01L21/205 ,  H01L31/04

Abstract: PURPOSE:To obtain a multilayered structure having excellent interfacial characteristics by a method wherein a layer of semiconductor thin film, which is activated and subjected to forbiden band width control by bringing a specific precursor and a specific compound into contact with a heating element with a catalystic effect, and a layer of the other tin film is formed by a plasma CVD method. CONSTITUTION:The raw material substance to be used for formation of a deposition film containing, in a molecule, a kind of elements of halogene and hydrogen is introduced into film-forming space and/or the precursor grown from the raw material substance to be used for formation of a deposition film, is introduced into the activation space provided separately from the above-mentioned film-forming space. Said substance or the precursor is activated by the catalytic effect of a heating element consisting of a single substance of alloy of transition metal provided in the film- forming space, the precursor and/or the active species to be used for formation of the deposition film is grown and the forbiden band width-controlled thin film is formed. Also, besides the above-mentioned thin film, a layer of semiconductor thin film formed by performing a CVD method is provided. As a result, the structure having improve interfacial characteristics can be obtained.

公开(公告)号：JPS63224216A

公开(公告)日：1988-09-19

申请号：JP5648387

申请日：1987-03-13

Applicant: CANON KK

Inventor： SANO MASAFUMI ,  TSUDA HISANORI ,  KANAI MASAHIRO

IPC: H01L21/205 ,  H01L31/04

Abstract: PURPOSE:To contrive both improvement in deposition speed and uniformity of film thickness by a method wherein precursor is passed through activated space without contacting to an active species, it is introduced into film-forming space, and a deposition film is formed by the chemical reaction of the precursor and the active seed introduced into the film-forming space. CONSTITUTION:Glass is used for a substrate 103, the substrate 103 is placed on a supporting stand 102, a film-forming chamber 101 is evacuated and depressed by an exhaust system, and the substrate is heated up by a substrate heating heater 104. At this point, Si2F6 is introduced from a cylinder through a feeding tube 108. At this time, a furnace 109 is heated up to 700 deg.C in advance. The Si2F6 gas passed through the inflared-ray image furnace 109 is decomposed, and the precursor such as SiF2* is grown. The SiF2* is a radical having a long life, it can be passed through a fine precursor carrying tube 110 having the inside diameter of 4 mmphi. This precursor and H* are chemically reacted, and a deposition film is formed on the substrate 103. As a result, a deposition film of high quality having various kinds of film qualities ranging on a large area can be formed uniformly.

公开(公告)号：JPS6357778A

公开(公告)日：1988-03-12

申请号：JP20201986

申请日：1986-08-28

Applicant: CANON KK

Inventor： TSUDA HISANORI ,  KANAI MASAHIRO ,  SANO MASAFUMI

IPC: H01L31/04 ,  C23C16/24 ,  C23C16/30 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C23C16/48 ,  C23C16/50 ,  C23C16/511 ,  G03G5/08 ,  G03G5/082 ,  H01L21/205

Abstract: PURPOSE:To form a deposited film having excellent quality to a uniform thickness by supplying a precursor by a gaseous raw material and gas for constituting an active species without mixing the same and bringing these gases into reaction in a film forming space before a substrate at the time of forming the deposited film on the substrate in a vacuum reaction chamber. CONSTITUTION:The inside of the reaction chamber 101 in which the substrate 103 consisting of a metal, glass, synthetic resin, etc., is placed is evacuated to a vacuum and the substrate 103 is heated to a relatively low temp. of 50-350 deg.C by a heater 104. The gaseous raw material for forming the deposited film is passed through the inside of the cracking space B in an IR image furnace 109 from a pipe 108 to form the precursor of the deposited film and the precursor is supplied through the cracking excitation space C by a pipe 110 to an association space D just before the film forming space A. On the other hand, a gaseous mixture composed of a gas for forming the active species and carrier gas such as H2 is fed in the space C from a pipe 112 without being mixed with the precursor in an activation energy introducing pipe 113 and the active species is formed by the microwaves from a microwave oscillator 114 and is mixed with the precursor so as to react therewith in the space C. The deposited film is thus uniformly formed on the surface of the substrate 103 in the film forming space A with good reproducibility.

公开(公告)号：JPS6247945B2

公开(公告)日：1987-10-12

申请号：JP923685

申请日：1985-01-23

Applicant: CANON KK

Inventor： TAKASU KATSUJI ,  TSUDA HISANORI ,  SANO MASAFUMI ,  HIRAI YUTAKA

IPC: C23C16/44 ,  C23C16/24 ,  C23C16/48 ,  G03G5/08 ,  G03G5/082 ,  H01L21/205 ,  H01L31/0248

公开(公告)号：JPS6269572A

公开(公告)日：1987-03-30

申请号：JP20963385

申请日：1985-09-22

Applicant: CANON KK

Inventor： TAKASU KATSUJI ,  SANO MASAFUMI ,  TSUDA HISANORI ,  HIRAI YUTAKA

IPC: H01L21/205 ,  H01L21/263 ,  H01L33/06 ,  H01L33/16 ,  H01L33/34 ,  H01L33/42

Abstract: PURPOSE:To enhance light emitting efficiency and reproducibility, by providing a multilayer structure, in which the first and second layer regions, whose optical band gaps are different, are periodically laminated as one unit, thereby providing a light emitting peak in a visible wavelength region. CONSTITUTION:On a lower electrode 102, which is provided on a substrate 101, an electric insulating layer 103, a light emitting layer 104 and an upper electrode 105 are provided. The light emitting layer 104 has a multilayer structure, in which the first layer region and the second layer region are periodically laminated as one unit. The first layer region is constituted by an amorphous material, which includes silicon atoms Si, carbon atoms C and fluorine atoms F and also includes hydrogen atoms H as required. The second layer region has the different optical band gap from that of the first layer region.

公开(公告)号：JPS6269570A

公开(公告)日：1987-03-30

申请号：JP20933885

申请日：1985-09-21

Applicant: CANON KK

Inventor： TAKASU KATSUJI ,  SANO MASAFUMI ,  TSUDA HISANORI ,  HIRAI YUTAKA

IPC: H01L21/205 ,  H01L21/263 ,  H01L33/06 ,  H01L33/16 ,  H01L33/34 ,  H01L33/42

Abstract: PURPOSE:To improve light emitting efficiency and reproducibility, by providing a multilayer structure for a light emitting layer, in which a layer region comprising non-single crystal material including Si atoms, C atoms and H atoms and a layer region, whose optical band gap is different from that of said layer region, are combined as one unit. CONSTITUTION:A light emitting element is composed of a lower electrode 102, an electric insulating layer 103, a light emitting layer 104 and an upper electrode 105. The light emitting layer has a multilayer structure, in which a layer region I and a layer region II are periodically laminated as one unit. The layer group I comprises a non-single crystal material including Si atoms, C atoms and H atoms. The layer region II has the different optical band gap from that of the layer region I. The H atoms included in the layer region I compensates for the free dangling bonds of the Si atoms and the C atoms. With respect to the sum of the Si atoms and the C atoms, the rate of 0.1-40atom% is suitable.

公开(公告)号：JPS6255972A

公开(公告)日：1987-03-11

申请号：JP19744985

申请日：1985-09-05

Applicant: CANON KK

Inventor： TAKASU KATSUJI ,  SANO MASAFUMI ,  TSUDA HISANORI ,  HIRAI YUTAKA

IPC: H01L21/205 ,  H01L21/263 ,  H01L33/16 ,  H01L33/34 ,  H01L33/42

Abstract: PURPOSE:To improve the light emitting efficiency of a light emitting element by composing a light emitting layer of the first and second intermediate layers of P-type and N-type amorphous Si which contain Si, C and H atoms when laminating upper and lower electrodes for holding a light emitting layer therebetween on a substrate as the light emitting element, and specifying the optical band gap and quantum efficiency. CONSTITUTION:A lower layer 102 is coated as required to enhance the bondability with an electrode layer 103 on a substrate 101, and the lower electrode layer 103 of the prescribed layer is formed thereon. Then, when a light emitting layer 104 is formed thereon, the layer 104 is formed of a laminated of P-type and N-type amorphous Si intermediate layers which contain Si, C and H atoms, optical band gaps are selected to 2.0eV or higher, and the quantum efficiency is set to 10 or more. Here, these intermediate layers may be of I-type, or may be of Si which does not contain an impurity. Thereafter, an upper electrode 105 is coated on the layer 104 as a light emitting element. Thus, the peak value of emitting light is obtained in a visible wavelength range to improve the light emitting efficiency and the lifetime.