公开(公告)号：JP2008202959A

公开(公告)日：2008-09-04

申请号：JP2007036411

申请日：2007-02-16

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HIRATA SHOJI ,  TANIGUCHI KAYOKO ,  KURODA AKIHIRO ,  NOMOTO KAZUTOSHI

IPC: G01H9/00 ,  H04R23/00

CPC classification number: G01H9/00 ,  H04R1/005 ,  H04R23/008

Abstract: PROBLEM TO BE SOLVED: To provide a vibration detecting device that optically performs digital vibration detection and allows miniaturization of the device.
SOLUTION: A laser beam Lout from a light source 10 is divided into two optical paths (first and second optical paths) and made to proceed by a polarized light beam splitter 130. At this time, an S wave component s1 (reflected light) reflected by a vibrating film 151 via a λ/4 plate 161 in the first optical path (reflected light path) is made to interfere with a P wave component (reflected light) reflected by a vibrating film 152 via a λ/4 plate 162 in the second optical path (reference light path) to form an interference pattern. Based on the interference patterns, vibration of the vibrating films 151 is quantized and detected. The vibration of the vibrating films 151 is digitally and optically detected with a constitution more compact than the conventional one.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种光学执行数字振动检测并允许装置小型化的振动检测装置。 解决方案：来自光源10的激光束Lout被分成两个光路（第一和第二光路），并由偏振光束分离器130进行。此时，S波分量s1（反射 通过第一光路（反射光路）中的λ/ 4板161被振动膜151反射的光通过λ/ 4板与由振动膜152反射的P波分量（反射光）干涉 162在第二光路（参考光路）中形成干涉图案。 基于干涉图案，量化并检测振动膜151的振动。 振动膜151的振动以比传统振动膜更紧凑的结构进行数字和光学检测。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007324312A

公开(公告)日：2007-12-13

申请号：JP2006151771

申请日：2006-05-31

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HIRATA SHOJI

IPC: H01S5/22

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser array capable of making an NFP (Near Field Pattern) in a uniform shape without dropping energy conversion efficiency.
SOLUTION: A plurality of striped ridges 11A arranged side by side are assembled and grouped at a plurality of positions. A light emitting group G1 consists of four ridges 11A, and a light emitting group G2 consists of three ridges 11A. The respective groups G1 and G2 are placed at equal pitches so that their center positions are cyclic. A width W2 of a gap between the respective groups G1 and G2 is wider than widths W1 and W3 of the respective groups G1 and G2. The plurality of ridges 11A in the respective groups G1 and G2 are placed at equal intervals wider than a stripe width of the ridge 11A.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供能够使NFP（近场图案）均匀形状而不降低能量转换效率的半导体激光器阵列。 解决方案：并排设置的多个条纹脊11A被组装并分组在多个位置。 发光组G1由四个脊11A组成，发光组G2由三个脊11A组成。 各组G1和G2以相等的间距放置，使得它们的中心位置是循环的。 各组G1和G2之间的间隙的宽度W2宽于各组G1和G2的宽度W1和W3。 各组G1和G2中的多个脊11A以与脊11A的条宽相等的间隔放置。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007019368A

公开(公告)日：2007-01-25

申请号：JP2005201233

申请日：2005-07-11

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HIRATA SHOJI

IPC: H01S5/40 ,  H01S5/022 ,  H01S5/026

Abstract: PROBLEM TO BE SOLVED: To provide an array type semiconductor laser emitting laser light having composite NFP in which intensity distribution is uniformed.
SOLUTION: The array type semiconductor laser 10 comprises: a multifilm semiconductor layer constituted of laminating a first clad layer 12; an active layer 13; and a second clad layer 14; and a plurality of band-like waveguides 21 arrayed in parallel. In the plurality of waveguides 21 (21A to 21D), each of the widths W1 to W4 is ≥10 μm, and the width of at least one waveguide is different from the widths of the other waveguides. The ripple components of respective NFPs 22A to 22D in respective waveguides 21A to 21D depend on respective waveguide widths Wi. When the NFPs 22A to 22D are superposed to each other, ruggedness is flattened in the ripple component of the composite NFP.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决的问题：提供具有强度分布均匀的复合NFP的阵列型半导体激光发射激光。 解决方案：阵列型半导体激光器10包括：复合半导体层，其由层叠第一覆盖层12; 有源层13; 和第二包层14; 以及并列排列的多个带状波导管21。 在多个波导21（21A〜21D）中，宽度W1〜W4分别为≥10μm，至少一个波导的宽度与其他波导的宽度不同。 各个波导21A至21D中各个NFP 22A至22D的纹波分量取决于相应的波导宽度Wi。 当NFP 22A至22D彼此叠置时，复合NFP的纹波分量中的粗糙度变平坦。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005116728A

公开(公告)日：2005-04-28

申请号：JP2003347932

申请日：2003-10-07

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HIRATA SHOJI

IPC: H01S5/223

Abstract: PROBLEM TO BE SOLVED: To provide a broad area-type semiconductor laser which has NFP that is similar in shape to an ideal top hat profile and is kept stable without causing a deterioration in utilization efficiency of light.
SOLUTION: The semiconductor laser is equipped with a first conductivity-type first clad layer, an active layer formed on the first clad layer, a guide layer 5 which is formed on the active layer and provided with a stripe-shaped rib structure 9, and a second conductivity-type second clad layer formed on the guide layer 5. Rugged optical waveguides 11 to 14 which are periodical in the widthwise direction of the stripe-shaped rib structure 9 are provided to the rib structure 9 of the guide layer 5.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供具有类似于理想顶帽轮廓的NFP的宽范围型半导体激光器，并且保持稳定而不会导致光的利用效率的劣化。 解决方案：半导体激光器配备有第一导电型第一覆盖层，形成在第一覆盖层上的有源层，形成在有源层上并具有条形肋结构的引导层5 形成在引导层5上的第二导电型第二覆盖层。在条形肋结构9的宽度方向上周期性的坚固的光波导11至14设置在引导层的肋结构9 5.版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2003324248A

公开(公告)日：2003-11-14

申请号：JP2002127882

申请日：2002-04-30

Applicant: Sony Corp ,  ソニー株式会社

Inventor： NAGATAKE TAKESHI ,  HIRATA SHOJI

IPC: H01S5/16 ,  H01S5/34 ,  H01S5/343

CPC classification number: B82Y20/00 ,  H01S5/164 ,  H01S5/3403 ,  H01S5/34313 ,  H01S5/34366

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser element having a high output and high reliability and capable of suppressing light absorption on a laser exiting end face.
SOLUTION: The semiconductor laser element 10 that is an AlGaInAs semiconductor laser element is provided with lamination structure composer of an n-AlGaAs buffer layer 14, an n-AlGaAs clad layer 16, an active layer 18, a p-AlGaAs clad layer 20, and a p-GaAs cap layer 22 which are laminated on the surface of an n-GaAs substrate 12. The active layer 18 is constituted of an (Al
0.37 Ga
0.63 )
0.97 In
0.03 As optical guide layer 18a, an Al
0.1 Ga
0.9 As active layer 18b and an (Al
0.37 Ga
0.63 )
0.97 In
0.03 As optical guide layer 18c. When an AlGaInAs layer to which In is added is used for the optical guide layers 18a, 18c in the semiconductor laser element 10, compression distortion is generated in the active layer 18b. Consequently, force is applied from the adjacent optical guide layers 18a, 18c to the laser exiting end face of the active layer 18b, and a grating constant is reduced. As a result, band gap energy in the vicinity of the end face of the active layer is increased larger than band gap energy in the laser and window structure is formed.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供具有高输出和高可靠性并能够抑制激光离开端面的光吸收的半导体激光元件。 解决方案：作为AlGaInAs半导体激光元件的半导体激光元件10设置有n-AlGaAs缓冲层14，n-AlGaAs覆层16，有源层18，p-AlGaAs覆层 层20和层叠在n-GaAs衬底12的表面上的p-GaAs覆盖层22构成。有源层18由（Al 0.37 < SB>） 0.97 在 0.03 中作为光导层18a，作为活性层18b和 作为光导层18c，在（SB）0.03 中，（A1 0.37 Ga 0.63 ） 0.97 当添加了In的AlGaInAs层用于半导体激光元件10中的导光层18a，18c时，在有源层18b中产生压缩失真。 因此，从相邻的光导层18a，18c施加力到有源层18b的激光离开端面，并且光栅常数减小。 结果，有源层的端面附近的带隙能量比激光中的带隙能量增大，形成窗口结构。 版权所有（C）2004，JPO

公开(公告)号：JP2003031887A

公开(公告)日：2003-01-31

申请号：JP2001214791

申请日：2001-07-16

Applicant: Sony Corp ,  ソニー株式会社

Inventor： NARUI HIRONOBU ,  HIRATA SHOJI

IPC: G02B6/42 ,  H01S5/022 ,  H01S5/026 ,  H01S5/22

Abstract: PROBLEM TO BE SOLVED: To provide a low cost optical semiconductor device which can prevent deterioration or stop of a function of the device due to a deterioration of a light source and which has a high mass productivity.
SOLUTION: The optical semiconductor device comprises a multi-beam light source capable of emitting a plurality of beams, and an optical fiber having a wider core diameter than an interval of the beams to be emitted from the light source.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：提供一种低成本的光学半导体装置，其可以防止由于光源的劣化而引起的装置功能的劣化或停止，并且具有高的批量生产率。 解决方案：光学半导体器件包括能够发射多个光束的多光束光源和具有比从光源发射的光束的间隔更宽的芯直径的光纤。

公开(公告)号：JP2002319176A

公开(公告)日：2002-10-31

申请号：JP2001122752

申请日：2001-04-20

Applicant: SONY CORP

Inventor： NARUI HIRONOBU ,  HIRATA SHOJI

IPC: G11B7/135 ,  H01S5/22

Abstract: PROBLEM TO BE SOLVED: To provide an optical pickup device having a multi-beam semiconductor laser device provided with a plurality of semiconductor laser elements as a light source and high optical use efficiency. SOLUTION: The optical pickup device 40 is for recording/reproducing both of a DVD and a CD-R/RW, and is provided with a dual-wavelength semiconductor laser device 42 and an optical system 44. The semiconductor laser device has a semiconductor laser element 46 for the CD-R/RW and a semiconductor laser element 48 for the DVD. The laser stripe of the element 46 extends in the optical axis direction of the optical system 44. The elements 46 and 48 are placed so that the laser stripe of the element 48 approaches the laser stripe of the element 46 as approaching an emission end surface. The optical axis correcting plate 50 makes coincide the emission optical path of the laser beam of the element 48 made incident on the optical axis correcting plate 50 and emitted from the optical axis correcting plate 50 with the emission optical path of the laser beam of the element 46 emitted from the optical axis correcting plate 50.

公开(公告)号：JP2002290335A

公开(公告)日：2002-10-04

申请号：JP2001092627

申请日：2001-03-28

Applicant: SONY CORP

Inventor： HIRATA SHOJI

IPC: H01L33/00 ,  H04B10/00 ,  H04B10/11 ,  H04B10/116 ,  H04B10/54 ,  H04B10/105 ,  H04B10/10 ,  H04B10/22

Abstract: PROBLEM TO BE SOLVED: To provide a safe optical space transmitter covering a wide range that can solve by a simple method a problem of a conventional optical space transmitter employing an infrared ray that has had a defect of determining a transmission path because the infrared ray is not a visible ray and may give damages to eyes. SOLUTION: This method employs a lighting light source also for an information transmitter to solve the problem above. The optical space transmitter is provided with an LED lighting light 1 and a modulation means that modulates a waveform of power supplied to the lighting light 1 by information from a personal computer 2, the lighting light is modulated for transmission of information and a device (e.g. a printer 4) connected to a light receiving unit 3 receiving the modulated lighting light is driven.

公开(公告)号：JP2002050829A

公开(公告)日：2002-02-15

申请号：JP2000235342

申请日：2000-08-03

Applicant: SONY CORP

Inventor： HIRATA SHOJI

IPC: H01S5/22

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser of high reliability by suppressing defect and migration. SOLUTION: This semiconductor laser 1 is provided with an N-type substrate 10 in which protruding regions 10a and recessed regions 10b are formed adjacently, a function layer 20 in which an N-type clad layer 21, an active layer 22 and a P-type clad layer 23 are formed in this order in the protruding region 10a of the substrate 10, a buried layer 30 formed in the recessed part 10b of the substrate 10 in the same constitution as the function layer 20 and is buried in the recessed region 10b, a P-type first contact layer 11 formed on the function layer 20 and the buried layer 30, and an N-type current blocking layer 12 which is formed so as to be in contact with the whole end portion of at least the active layer 22, on the first contact layer 11 formed on the buried layer 30.

公开(公告)号：JP2001244572A

公开(公告)日：2001-09-07

申请号：JP2000056947

申请日：2000-03-02

Applicant: SONY CORP

Inventor： NARUI HIRONOBU ,  HIRATA SHOJI

IPC: H01S5/22 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To contemplate high level integration and improve performance of a semiconductor laser light emitting device by preventing abnormal growth of a quaternary based compound semiconductor layer and reducing an internal between semiconductor laser light emitting elements. SOLUTION: In this manufacturing method of the semiconductor laser light emitting device 1, a first semiconductor laser light emitting element 3 and a second semiconductor laser light emitting element 5 which oscillate laser lights different in wavelength are formed on a substrate 10. After a process for leaving a first laminate 16 which constitutes the first semiconductor laser light emitting element 3 in a forming region 2 of the first semiconductor laser light emitting element is performed and before a second laminate 26 which constitutes the second semiconductor laser light emitting element 5 is formed, a side surface 16S of the left first laminated 16 which is along a laser light oscillating direction is formed to be a slope gentler than a 111} surface.