TEMPERATURE CHARACTERISTIC SETTING CIRCUIT OF ELECTRONIC CIRCUIT

    公开(公告)号:JPS54159847A

    公开(公告)日:1979-12-18

    申请号:JP6921778

    申请日:1978-06-08

    Applicant: SONY CORP

    Abstract: PURPOSE:To make only the temperature characteristic of the output of an electronic circuit into a desired characteristic without changing the output characteristic peculiar to the electronic circuit by constituting the first and the second impedance elements by series circuits of two impedances respectively and satisfying a prescribed relation. CONSTITUTION:Resistor 3 is constituted by a series circuit of resistors 3a and 3b having resistance values R2a and R2b, and resistor 5 is constituted by a series circuit of resistors 5a and 5b having resistance values R2fa and R2fb, and resistor 5a is constituted by a thermistor as a resistor having a large absolute value of a resistance temperature coefficient. Then, the temperature characteristic of output voltage e0 is made into a desired characteristic independently of the irregularity of the temperature characteristic os thermistor 5a while fixing the output characteristic peculiar to the electronic circuit by selecting resistance values above so that they may satisfy R2a/R2fa=R2b/R2fb=constant.

    SEMICONDUCTOR SIMULATION METHOD
    84.
    发明专利

    公开(公告)号:JP2001298185A

    公开(公告)日:2001-10-26

    申请号:JP2000114538

    申请日:2000-04-17

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To allow various effects to be reflected on simulation calculation without causing increased calculation time or degraded convergence characteristics. SOLUTION: Simulation is performed for electric characteristics with the thickness of an insulating film of an MIS semiconductor as a parameter. Here, there are provided a process (S101-S102) where an error between a reference value for relationship between a gate voltage and a drain current of the MIS semiconductor and a simulation calculation result is functionalized in advance with a relationship between the gate voltage and the thickness of insulating film, and a process (S103-S104) where, when simulating the electric characteristics at a specified film thickness of the insulating film of the MIS semiconductor, a drain current at a specified gate voltage is calculated as a drain current acquired through simulation at the film thickness of the insulating film at the specified gate voltage acquired with that function.

    ROTARY COUPLING DEVICE
    85.
    发明专利

    公开(公告)号:JPH06318806A

    公开(公告)日:1994-11-15

    申请号:JP29830793

    申请日:1993-11-29

    Applicant: SONY CORP

    Abstract: PURPOSE:To attain transmission of a multi-channel over a broad band by acting microstrip lines provided to opposite faces of stationary and rotary disks like a directional coupler and allowing the stationary and rotary disks to send/ receive a high frequency signal. CONSTITUTION:When a modulator 21A applies a modulation output signal obtained by modulating a high frequency signal by a reproduced video signal to a microstrip 15A of a rotary section, the signal is sent to a termination side of the strip 15A and sent to microstrip lines 16A1, 16A2 of a stationary section, in which the signal is demodulated by a demodulator 26A via a signal synthesizer 30A. Moreover, when the output signal obtained by modulating a high frequency signal by the reproduced video signal is fed from a modulator 21B to a microstrip line 15B of the rotation section, the signal is sent to a termination of the strip line 15B. Then the signal is sent to the microstrip lines 16A1, 16A2 of the stationary section opposite to the microstrip line 15B, and demodulated by the demodulator 26B via a signal synthesizer 30. Thus, a signal transmission characteristic of a specific band width of 10% or over is obtained from the directional coupler.

    ROTARY COUPLER
    88.
    发明专利

    公开(公告)号:JPS6371905A

    公开(公告)日:1988-04-01

    申请号:JP21753286

    申请日:1986-09-16

    Applicant: SONY CORP

    Abstract: PURPOSE:To make wide band signal transmission continuously by forming a micro-strip line on a circumference having peripheral length corresponding to electrical length integer times central frequency of transmission frequency band nearly over whole circumference. CONSTITUTION:A micro-strip 15 is formed on a circumference having peripheral length Lo integer (n) times signal wavelength lambda of transmission signals, i.e., high frequency signals, nearly over whole circumference. Accordingly, the gap G at both ends of the micro-strip 15 is very small, and phase of signals propagating in the micro-strip 15 is continued apparently even in the gap G, i.e., in a part where there is no micro-strip line, and signal transmission of small loss can be made in the case where micro-strips 15, 16 are coupled crossing the gap G. The loss caused by the gap G having no micro-strip line can be compensated fully by applying AGC to a demodulator 26.

    ROTARY COUPLING DEVICE
    89.
    发明专利

    公开(公告)号:JPS6356801A

    公开(公告)日:1988-03-11

    申请号:JP20246986

    申请日:1986-08-28

    Applicant: SONY CORP

    Abstract: PURPOSE:To obtain a flat frequency characteristic over a wide frequency band by arranging an electromagnetic wave absorbing member along a strip conductor at a dielectric base forming a microstrip line except a region where the electromagnetic wave energy of the microstrip line mode is concentrated. CONSTITUTION:The microstrip line opposed to each other and arranged on a concentric circumference around a turning center of a rotary part 10 are provided to opposed face of a rotary party 10 and a stator part 20 and a high frequency signal is transmitted/received between the microstrip line of the rotor part and that of the stator part. An undesired electromagnetic energy of the parallel planar mode generated between ground conductors 11, 21 of each dielectric base forming the microstrip lines of the rotor part 10 and the stator part 20 is absorbed by electromagnetic absorbing members 13, 23. Thus, a flag frequency characteristic is obtained over a wide frequency band.

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