公开(公告)号：FR2519767A1

公开(公告)日：1983-07-18

申请号：FR8300190

申请日：1983-01-07

Applicant: SONY CORP ,  SONY CORP

Inventor： OTOBE TAKASHI ,  KOMATSU YASUTOSHI ,  TAKASHI OTOBE YASUTOSHI KOMATSU ET YOSHIKAZU MURAKAMI ,  MURAKAMI YOSHIKAZU

IPC: H03D13/00 ,  H03D9/04 ,  G01R25/04

Abstract: A.DETECTEUR DE PHASE. B.DETECTEUR COMPRENANT UN TRANSISTOR FET 11 DONT UNE BORNE G EST RELIEE A UN PREMIER CHEMIN DE SIGNAL 12, S ET UNE AUTRE BORNE S A UNE AUTRE ENTREE 13, S, UNE RESISTANCE DE POLARISATION 17 ET UNE SOURCE DE COURANT 18 AINSI QU'UN CIRCUIT DE CHARGE 23, 24. C.L'INVENTION S'APPLIQUE AUX TECHNIQUES MICRO-ONDES.

公开(公告)号：AU556643B2

公开(公告)日：1986-11-13

申请号：AU9199282

申请日：1982-12-31

Applicant: SONY CORP

Inventor： OTOBE TAKASHI ,  KOMATSU YASUTOSHI

IPC: H03D9/04 ,  H03D13/00 ,  H03D11/00

Abstract: A phase detector for detecting a mutual phase difference between two signals, such as first and second microwave signals, comprises first and second signal paths for being supplied with first and second input signals of the same frequency, respectively, and providing with a predetermined additional mutual phase difference between the first and second input signals at their output ends and a field effect transistor having a pair of input electrodes connected to the output ends of the first and second signal paths, respectively, and an output electrode from which an output signal representing a mutual phase difference which the first and second input signals have originally therebetween is derived. The first and second input signals at the input electrodes of the field effect transistor have the original mutual phase difference which is to be detected and the predetermined additional mutual phase difference added by the first and second signal paths therebetween. The field effect transistor is biased to operate with a gate bias voltage nearly equal to a pinch-off voltage thereof. In order to establish such biasing state without reducing the operational gain of the field effect transistor, a biasing resistance connected to the source of the field effect transistor is selected to be low and a current source is provided for supplying an external biasing current to the biasing resistance, thereby to produce the gate bias voltage required.

公开(公告)号：DE19804568B9

公开(公告)日：2009-08-06

申请号：DE19804568

申请日：1998-02-05

Applicant: SONY CORP

Inventor： KOMATSU YASUTOSHI ,  HAYASHI YUTAKA

IPC: H01L27/06 ,  H01L29/78 ,  H01L21/336 ,  H01L21/84 ,  H01L23/58 ,  H01L27/02 ,  H01L27/12 ,  H01L29/10 ,  H01L29/786 ,  H03K17/687

Abstract: An insulated-gate field effect transistor comprising a channel forming region, source/drain regions, a gate region, a bias supplying means, and a capacitive element, wherein a potential for controlling a gate threshold voltage of the insulated-gate field effect transistor in an off-state thereof is applied to the channel forming region through the bias supplying means, and a signal having approximately the same phase as a phase of a signal supplied to the gate region is supplied to the channel forming region through the capacitive element.

公开(公告)号：DE3587469D1

公开(公告)日：1993-08-26

申请号：DE3587469

申请日：1985-10-30

Applicant: SONY CORP

Inventor： KOMATSU YASUTOSHI

IPC: H01P5/02 ,  G11B5/02 ,  H01F38/14 ,  H01P1/06 ,  H01P5/12 ,  H03C7/02

Abstract: A rotary coupler is disclosed, in which a rotor (11, 411, 511) and a non-rotor (stator 12, 412, 512) are provided on their facing surfaces with microstrip lines (15, 16; 115, 116; 215, 216; 315; 316; 415, 416; 515, 516) which are disposed along circles concentric with the axis of the rotor (11, 411, 511) and facing one another. High frequency signals are transferred between the microstrip line (15, 115, 215, 315, 415, 515) on the side of the rotor (11, 411, 511) and the microstrip line (16, 116, 216, 316, 416, 516) on the side of the non-rotor (12, 412, 512).

公开(公告)号：AT91825T

公开(公告)日：1993-08-15

申请号：AT85113827

申请日：1985-10-30

Applicant: SONY CORP

Inventor： KOMATSU YASUTOSHI

IPC: H01P5/02 ,  G11B5/02 ,  H01F38/14 ,  H01P1/06 ,  H01P5/12 ,  H03C7/02

Abstract: A rotary coupler is disclosed, in which a rotor (11, 411, 511) and a non-rotor (stator 12, 412, 512) are provided on their facing surfaces with microstrip lines (15, 16; 115, 116; 215, 216; 315; 316; 415, 416; 515, 516) which are disposed along circles concentric with the axis of the rotor (11, 411, 511) and facing one another. High frequency signals are transferred between the microstrip line (15, 115, 215, 315, 415, 515) on the side of the rotor (11, 411, 511) and the microstrip line (16, 116, 216, 316, 416, 516) on the side of the non-rotor (12, 412, 512).

公开(公告)号：GB2113492B

公开(公告)日：1985-02-20

申请号：GB8237045

申请日：1982-12-31

Applicant: SONY CORP

Inventor： OTOBE TAKASHI ,  KOMATSU YASUTOSHI ,  MURAKAMI YOSHIKAZU

IPC: H03D9/04 ,  H03D13/00

Abstract: A phase detector for detecting a mutual phase difference between two signals, such as first and second microwave signals, comprises first and second signal paths for being supplied with first and second input signals of the same frequency, respectively, and providing with a predetermined additional mutual phase difference between the first and second input signals at their output ends and a field effect transistor having a pair of input electrodes connected to the output ends of the first and second signal paths, respectively, and an output electrode from which an output signal representing a mutual phase difference which the first and second input signals have originally therebetween is derived. The first and second input signals at the input electrodes of the field effect transistor have the original mutual phase difference which is to be detected and the predetermined additional mutual phase difference added by the first and second signal paths therebetween. The field effect transistor is biased to operate with a gate bias voltage nearly equal to a pinch-off voltage thereof. In order to establish such biasing state without reducing the operational gain of the field effect transistor, a biasing resistance connected to the source of the field effect transistor is selected to be low and a current source is provided for supplying an external biasing current to the biasing resistance, thereby to produce the gate bias voltage required.

公开(公告)号：GB2322003B

公开(公告)日：1999-06-09

申请号：GB9802209

申请日：1998-02-02

Applicant: SONY CORP

Inventor： KOMATSU YASUTOSHI ,  HAYASHI YUTAKA

IPC: H01L21/336 ,  H01L21/84 ,  H01L29/78 ,  H01L27/02 ,  H01L27/12 ,  H01L29/10 ,  H01L29/786 ,  H01L29/423

Abstract: An insulated-gate field effect transistor comprising a channel forming region, source/drain regions, a gate region, a bias supplying means, and a capacitive element, wherein a potential for controlling a gate threshold voltage of the insulated-gate field effect transistor in an off-state thereof is applied to the channel forming region through the bias supplying means, and a signal having approximately the same phase as a phase of a signal supplied to the gate region is supplied to the channel forming region through the capacitive element.

公开(公告)号：AT60690T

公开(公告)日：1991-02-15

申请号：AT85113243

申请日：1985-10-18

Applicant: SONY CORP

Inventor： ITO YUZIRO ,  KOMATSU YASUTOSHI ,  OTOBE TAKASHI

IPC: H01P1/06

公开(公告)号：FR2519767B1

公开(公告)日：1987-01-30

申请号：FR8300190

申请日：1983-01-07

Applicant: SONY CORP

Inventor： OTOBE TAKASHI ,  KOMATSU YASUTOSHI ,  MURAKAMI YOSHIKAZU

IPC: H03D9/04 ,  H03D13/00 ,  G01R25/04

Abstract: A phase detector for detecting a mutual phase difference between two signals, such as first and second microwave signals, comprises first and second signal paths for being supplied with first and second input signals of the same frequency, respectively, and providing with a predetermined additional mutual phase difference between the first and second input signals at their output ends and a field effect transistor having a pair of input electrodes connected to the output ends of the first and second signal paths, respectively, and an output electrode from which an output signal representing a mutual phase difference which the first and second input signals have originally therebetween is derived. The first and second input signals at the input electrodes of the field effect transistor have the original mutual phase difference which is to be detected and the predetermined additional mutual phase difference added by the first and second signal paths therebetween. The field effect transistor is biased to operate with a gate bias voltage nearly equal to a pinch-off voltage thereof. In order to establish such biasing state without reducing the operational gain of the field effect transistor, a biasing resistance connected to the source of the field effect transistor is selected to be low and a current source is provided for supplying an external biasing current to the biasing resistance, thereby to produce the gate bias voltage required.

公开(公告)号：GB2113492A

公开(公告)日：1983-08-03

申请号：GB8237045

申请日：1982-12-31

Applicant: SONY CORP

Inventor： OTOBE TAKASHI ,  KOMATSU YASUTOSHI ,  MURAKAMI YOSHIKAZU

IPC: H03D9/04 ,  H03D13/00

Abstract: A phase detector for detecting a mutual phase difference between two signals, such as first and second microwave signals, comprises first and second signal paths for being supplied with first and second input signals of the same frequency, respectively, and providing with a predetermined additional mutual phase difference between the first and second input signals at their output ends and a field effect transistor having a pair of input electrodes connected to the output ends of the first and second signal paths, respectively, and an output electrode from which an output signal representing a mutual phase difference which the first and second input signals have originally therebetween is derived. The first and second input signals at the input electrodes of the field effect transistor have the original mutual phase difference which is to be detected and the predetermined additional mutual phase difference added by the first and second signal paths therebetween. The field effect transistor is biased to operate with a gate bias voltage nearly equal to a pinch-off voltage thereof. In order to establish such biasing state without reducing the operational gain of the field effect transistor, a biasing resistance connected to the source of the field effect transistor is selected to be low and a current source is provided for supplying an external biasing current to the biasing resistance, thereby to produce the gate bias voltage required.