Method and Apparatus for Performing Group Instructions
    82.
    发明申请
    Method and Apparatus for Performing Group Instructions 审中-公开
    执行组指令的方法和装置

    公开(公告)号:US20080104376A1

    公开(公告)日:2008-05-01

    申请号:US11842025

    申请日:2007-10-29

    Abstract: Systems and apparatuses are presented relating a programmable processor comprising an execution unit that is operable to decode and execute instructions received from an instruction path and partition data stored in registers in the register file into multiple data elements, the execution unit capable of executing a plurality of different group floating-point and group integer arithmetic operations that each arithmetically operates on multiple data elements stored registers in a register file to produce a catenated result that is returned to a register in the register file, wherein the catenated result comprises a plurality of individual results, wherein the execution unit is capable of executing group data handling operations that re-arrange data elements in different ways in response to data handling instructions.

    Abstract translation: 提出了一种系统和装置,其涉及包括执行单元的可编程处理器,该执行单元可操作以解码和执行从指令路径接收的指令,并将存储在寄存器堆中的寄存器中的数据分割成多个数据元素,该执行单元能够执行多个 不同的组浮点和组整数算术运算,每个算术运算在寄存器文件中的多个数据元素存储的寄存器上产生返回到寄存器文件中的寄存器的连接结果,其中,连接结果包括多个单独的结果 其中,所述执行单元能够执行响应于数据处理指令以不同方式重新布置数据元素的组数据处理操作。

    Direct digital frequency synthesizer using sigma-delta techniques
    87.
    发明授权
    Direct digital frequency synthesizer using sigma-delta techniques 失效
    使用Σ-Δ技术的直接数字频率合成器

    公开(公告)号:US5563535A

    公开(公告)日:1996-10-08

    申请号:US350131

    申请日:1994-11-29

    CPC classification number: H03C3/00 G06F1/0328

    Abstract: A direct digital synthesizer (DDS) for generating a waveform generates a sequence of n-bit phase signals representing phase of the waveform, wherein n is an integer greater than zero. Each n-bit phase signal comprises a phase estimate signal and a phase error signal. The phase estimate signal comprises a most-significant m bits of the n-bit quantity (0

    Abstract translation: 用于产生波形的直接数字合成器(DDS)产生表示波形相位的n位相位信号的序列,其中n是大于零的整数。 每个n位相位信号包括相位估计信号和相位误差信号。 相位估计信号包括n比特量(0

    Masks for improved lithographic patterning for off-axis illumination
lithography
    88.
    发明授权
    Masks for improved lithographic patterning for off-axis illumination lithography 失效
    用于离轴照明光刻的改进的平版印刷图案的掩模

    公开(公告)号:US5447810A

    公开(公告)日:1995-09-05

    申请号:US194097

    申请日:1994-02-09

    Abstract: In a lithographical tool utilizing off-axis illumination, masks to provide increased depth of focus and minimize CD differences between certain features is disclosed. A first mask for reducing proximity effects between isolated and densely packed features and increasing depth of focus (DOF) of isolated features is disclosed. The first mask comprises additional lines, referred to as scattering bars, disposed next to isolated edges. The bars are spaced a distance from isolated edges such that isolated and densely packed edge gradients substantially match so that proximity effects become negligible. The width of the bars set so that a maximum DOF range for the isolated feature is achieved. A second mask that is effective with quadrapole illumination only, is also disclosed. This mask "boosts" intensity levels and consequently DOF ranges for smaller square contacts so that they approximate intensity levels and DOF ranges of larger elongated contacts. Increasing the intensity levels in smaller contacts reduces critical dimension differences between variably sized contact patterns when transferred to a resist layer. The second mask comprises additional openings, referred to as anti-scattering bars, disposed about the square contact openings. The amount of separation between the edge of the smaller contact and the anti-scattering bars determines the amount of increased intensity. The width of the anti-scattering bars determines the amount of increase in DOF range. Both scattering bar and anti-scattering bars are designed to have a widths significantly less than the resolution of the exposure tool so that they do not produce a pattern during exposure of photoresist.

    Abstract translation: 在利用离轴照明的光刻工具中,公开了掩模以提供增加的聚焦深度并且使特定特征之间的CD差异最小化。 公开了用于减少隔离和密集堆叠特征之间的邻近效应的第一掩模,并且增加了隔离特征的增加的焦深(DOF)。 第一掩模包括邻近隔离边缘设置的附加线,称为散射棒。 这些杆与隔离边缘间隔开一段距离,使得孤立和密集堆积的边缘梯度基本匹配,使得邻近效应变得可忽略。 条的宽度设置为使得隔离特征的最大DOF范围得以实现。 还公开了仅对四极照明有效的第二掩模。 该掩模“增加”强度水平,因此适用于较小的方形触点的DOF范围,使得它们近似于较大细长触点的强度水平和DOF范围。 增加较小触点中的强度水平可以减少转移到抗蚀剂层时可变尺寸的接触图案之间的临界尺寸差异。 第二掩模包括围绕正方形接触开口设置的称为防散射棒的附加开口。 较小触点的边缘与抗散射条之间的分离量决定了增加强度的量。 防散射条的宽度决定了DOF范围的增加量。 散射棒和防散射棒都被设计成具有明显小于曝光工具的分辨率的宽度,使得它们在光致抗蚀剂曝光期间不产生图案。

    Method for improved lithographic patterning in a semiconductor
fabrication process
    89.
    发明授权
    Method for improved lithographic patterning in a semiconductor fabrication process 无效
    在半导体制造工艺中改进光刻图案化的方法

    公开(公告)号:US5340700A

    公开(公告)日:1994-08-23

    申请号:US149122

    申请日:1993-11-03

    CPC classification number: G03F7/70466 G03F7/2022

    Abstract: A method of printing a sub-resolution device feature having first and second edges spaced in close proximity to one another on a semiconductor substrate includes the steps of first depositing a radiation-sensitive material on the substrate, then providing a first mask image segment which corresponds to the first edge. The first mask image segment is then exposed with radiation using an imaging tool to produce a first pattern edge gradient. The first pattern edge gradient defines the first edge of the feature in the material.A second mask image segment is then provided corresponding to the second feature edge. This second mask image segment is exposed to radiation to produce a second pattern edge gradient which defines the second edge of the feature. Once the radiation-sensitive material has been developed, the two-dimensional feature is reproduced on the substrate.

    Abstract translation: 一种打印具有在半导体衬底上彼此靠近彼此间隔开的第一和第二边缘的子分辨率器件特征的方法包括以下步骤:首先在衬底上沉积辐射敏感材料,然后提供与衬底相对应的第一掩模图像段 到第一边。 然后使用成像工具用辐射曝光第一掩模图像段以产生第一图案边缘梯度。 第一个图案边缘渐变定义材料中特征的第一个边缘。 然后对应于第二特征边缘提供第二掩模图像段。 该第二掩模图像段暴露于辐射以产生限定特征的第二边缘的第二图案边缘梯度。 一旦辐射敏感材料已经开发出来,二维特征就在基片上再现。

    Bipolar junction exhibiting suppressed kirk effect
    90.
    发明授权
    Bipolar junction exhibiting suppressed kirk effect 失效
    显示抑制kirk效应的双极结

    公开(公告)号:US5336926A

    公开(公告)日:1994-08-09

    申请号:US113510

    申请日:1993-08-27

    CPC classification number: H01L29/66272 H01L21/8249 H01L29/0826 Y10S257/927

    Abstract: A bipolar junction transistor (BJT) which exhibits a suppressed Kirk Effect comprises a lightly-doped n-type collector region formed above a more heavily-doped n+ layer. Directly above the collector is a p-type base which has an extrinsic region disposed laterally about an intrinsic region. An n+ emitter is positioned directly above the intrinsic base region. The BJT also includes a localized n+ region disposed directly beneath the intrinsic base region which significantly increases the current handling capabilities of the transistor.

    Abstract translation: 表现出抑制Kirk效应的双极结型晶体管(BJT)包括形成在更掺杂n +层上方的轻掺杂n型集电极区域。 在集电极的正上方是p型基体,其具有在本征区域周围设置的外在区域。 n +发射极位于本征基区的正上方。 BJT还包括直接位于本征基极区域下方的局部n +区,这显着增加了晶体管的电流处理能力。

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