Abstract:
It is disclosed a method of printing comprising the steps of: providing a solid state material having at least one exposed surface; applying an auxiliary layer to the exposed surface to form a composite structure, the auxiliary layer having a stress pattern; subjecting the composite structure to conditions facilitating fracture of the solid state material along a plane at a depth therein; and removing the auxiliary layer and, therewith, a layer of the solid state material terminating at the fracture depth, an exposed surface of the removed layer of solid state material having a surface topology corresponding to the stress pattern.
Abstract:
The invention relates to a method and a through-vapor mask for depositing layers in a structured manner by means of a specially designed coating mask (1) which has structures (4) that accurately fit into complementary alignment structures (5) of the microsystem wafer (2) to be coated (8) in a structured manner such that the mask and the wafer can be accurately aligned relative to one another. Very precisely defined areas on the microsystem wafer are coated (8) through holes (7, 7') in the coating mask, e.g. by means of sputtering, CVD, or evaporation processes.
Abstract:
A plurality of nanoparticles, a structure assembled therefrom, a method of forming the structure, including a plurality of particles where each particle of the plurality of particles is configured with a substantially predetermined shape and a largest dimension less than about 100 micrometers, and where each particle of the plurality of particles includes an opening through the particle.
Abstract:
본 개시물은 하이 표면 영역 스택된 층진 금속 구조들, 디바이스들, 장치, 시스템들 및 관련된 방법들의 구현들을 제공한다. 기판상의 복수의 스택된 층들은 제 1 금속 및 제 2 금속을 포함하는 플레이팅 배스로부터 제조될 수 있다. 변조되는 플레이팅 전류는 교번하는 제 1 금속 층들 및 합금 층들을 증착할 수 있으며, 합금 층들은 제 1 금속 및 제 2 금속을 포함한다. 합금 층들 사이의 갭들은 스택된 층진 구조를 정의하기 위해 제 1 금속 층들의 일부 부분들을 선택적으로 에칭함으로써 형성될 수 있다. 스택된 층진 구조들은 커패시터들, 인덕터들, 촉매 반응기들, 열 전달 튜브들, 비-선형 스프링들, 필터들, 배터리들 및 중금속 정화기들을 형성하기 위해 애플리케이션들에서 유용할 수 있다.
Abstract in simplified Chinese:一种可分离界面的形成方法,系在制程基底与集成电路组件或微机电组件的层与层之间,以接合度不佳的材质或制程或易被蚀刻去除的材质构成一种可藉外力破坏的可分离界面,而且集成电路组件或微机电组件在后续的制程中,可藉破坏该可分离界面而达到使集成电路组件或微机电组件与制程基底相互分离;而应用可分离界面的成形方法制成的微机电薄膜,其结构不带制程基底且具可挠曲性,而且上下两面都可制成具备电路接点、微结构或微机电组件,与必须与制程基底同时存在的传统微机电薄膜相较,不带制程基底且具可挠曲性微机电薄膜具有更广泛的实际应用。
Abstract in simplified Chinese:本发明提供高表面区域堆栈层金属结构、器件、设备、系统及相关方法之实施。可自一包括第一金属及第二金属之电镀槽来制造位于基板上之复数个堆栈层。一调制之电镀电流可沉积交替之第一金属层及合金层,该等合金层包括该第一金属及该第二金属。可借由选择性地蚀刻第一金属层之一些部分以界定堆栈层结构来形成合金层之间的间隙。堆栈层结构可在用以形成电容器、电感器、催化反应器、热转移管、非线性弹簧、过滤器、蓄电池及重金属净化器的应用中有用。
Abstract in simplified Chinese:一种可分离界面的形成方法,系在制程基底与集成电路组件或微机电组件的层与层之间,以接合度不佳的材质或制程或易被蚀刻去除的材质构成一种可藉外力破坏的可分离界面,而且集成电路组件或微机电组件在后续的制程中,可藉破坏该可分离界面而达到使集成电路组件或微机电组件与制程基底相互分离;而应用可分离界面的成形方法制成的微机电薄膜,其结构不带制程基底且具可挠曲性,而且上下两面都可制成具备电路接点、微结构或微机电组件,与必须与制程基底同时存在的传统微机电薄膜相较,不带制程基底且具可挠曲性微机电薄膜具有更广泛的实际应用。