公开(公告)号：US20080050267A1

公开(公告)日：2008-02-28

申请号：US11664058

申请日：2005-09-28

Applicant: Hiroshi Murai ,  Jun Chiba ,  Satoshi Teshima

Inventor： Hiroshi Murai ,  Jun Chiba ,  Satoshi Teshima

IPC: C22C5/02

CPC classification number: C22C5/02 ,  B23K35/3013 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/85439 ,  H01L2924/00011 ,  H01L2924/01105 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01205 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/01046 ,  H01L2924/01014 ,  H01L2924/01063 ,  H01L2924/01004 ,  H01L2924/01058 ,  H01L2924/01064 ,  H01L2924/01012 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01201 ,  H01L2924/00014 ,  H01L2924/0102 ,  H01L2924/01066 ,  H01L2924/0103 ,  H01L2924/0105 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/01404 ,  H01L2924/01006

Abstract: Provided is a thin Au alloy bonding wire having desired strength, good bondability and stability over time, and improved circularity of a squashed ball and sphericity of a melted ball. The Au alloy bonding wire contains, in an Au alloy matrix containing 0.05 to 2 mass % in total of at least one selected from Pd and Pt of high purity in Au of high purity, as trace elements, 10 to 100 ppm by mass of Mg, 5 to 100 ppm by mass of Ce, and 5 to 100 ppm by mass of each of at least one selected from Be, Y, Gd, La, Eu and Si, the total content of Be, Y, Gd, La, Eu and Si being 5 to 100 ppm by mass, or as trace elements, Mg, Be, and at least one selected from Y, La, Eu and Si, or as trace elements, 10 to 100 ppm by mass of Mg, 5 to 30 ppm by mass of Si, 5 to 30 ppm by mass of Be, and 5 to 30 ppm by mass of at least one selected from Ca, Ce and Sn.

Abstract translation: 提供具有期望强度，良好的粘合性和随时间稳定性的薄Au合金接合线，并且改善压扁球的圆形度和熔融球的球形度。 Au合金接合线含有0.05〜2质量％的Au系合金基体，作为微量元素，含有0.05〜2质量％的选自高纯度的Au中的高纯度的Pd和Pt中的至少1种，10〜100质量ppm的Mg ，Ce：5〜100质量ppm，Be，Y，Gd，La，Eu和Si中的至少一种中的至少一种为5〜100质量ppm，Be，Y，Gd，La，Eu的总含量 Si为5〜100质量ppm，作为微量元素，Mg，Be，选自Y，La，Eu，Si中的至少一种，微量元素为10〜100质量ppm，Mg为5〜30 Si为质量ppm，Be为5〜30质量ppm，选自Ca，Ce，Sn中的至少1种为5〜30质量ppm。

公开(公告)号：US20020168538A1

公开(公告)日：2002-11-14

申请号：US10128072

申请日：2002-04-23

Inventor： Timothy W. Ellis

IPC: B22F003/26 ,  H01L023/48

CPC classification number: H01L24/43 ,  C22C5/02 ,  C22C9/00 ,  H01L24/45 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01037 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01055 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/30107 ,  Y10T428/1216 ,  Y10T428/12222 ,  H01L2924/00015 ,  H01L2224/48 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/01201 ,  H01L2924/01204 ,  H01L2924/013 ,  H01L2924/00013

Abstract: A metal alloy composite comprising a phase of a highly-conductive base metal in the from of a matrix and a phase of another metal positioned within the matrix, the base metal being present in a major amount and the other metal being present in a minor amount, the metal alloy composite being capable of being formed into a very thin wire for use in a semiconductor application which includes a terminal assembly comprising an electrically conductive terminal in conductive contact with a conductive member and another electrically conductive terminal in conductive contact with a semiconductor, said terminals being joined by said alloy composite wire, examples of the base metal being gold, copper, and aluminum.

Abstract translation: 一种金属合金复合体，其包含基体中的高导电性贱金属相和位于基体内的另一种金属的相，所述贱金属以主要量存在，另一种金属以少量存在 该金属合金复合材料能够形成为用于半导体应用的非常细的导线，其包括端子组件，该端子组件包括与导电部件导电接触的导电端子和与半导体导电接触的另一个导电端子， 所述端子由所述合金复合线连接，所述基体金属的实例为金，铜和铝。

公开(公告)号：US06213382B1

公开(公告)日：2001-04-10

申请号：US09226033

申请日：1999-01-05

Applicant: Hideyuki Akimoto

Inventor： Hideyuki Akimoto

IPC: B21D3900

CPC classification number: H01L24/85 ,  B23K20/007 ,  B23K35/3013 ,  C22C5/02 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/01046 ,  H01L2924/01004 ,  H01L2924/0102 ,  H01L2924/00014 ,  H01L2924/01201 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/00015 ,  H01L2924/01006

Abstract: A gold alloy wire in which 0.2 to 5.0% by weight of palladium (Pd) and 1 to 100 ppm by weight of bismuth (Bi) are added to gold having a purity of at least 99.99% by weight. Preferably, at least one element selected from the group consisting of yttrium (Y), lanthanum (La), calcium (Ca) and beryllium (Bi) in an amount of 3 to 250 ppm by weight is further added to said gold. The gold alloy wire is especially adapted to forming a gold bump.

Abstract translation: 将纯度为99.99重量％以上的金加入金合金丝中，其中将0.2〜5.0重量％的钯（Pd）和1〜100重量ppm的铋（Bi）加入到金中。 优选地，在所述金中进一步加入至少一种选自3至250ppm重量的钇（Y），镧（La），钙（Ca）和铍（Bi）的元素。 金合金丝特别适合于形成金凸块。

公开(公告)号：US10037958B2

公开(公告)日：2018-07-31

申请号：US15625033

申请日：2017-06-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Toyohiro Aoki ,  Takashi Hisada ,  Eiji I. Nakamura

IPC: H01L23/00

CPC classification number: H01L24/11 ,  H01L24/02 ,  H01L24/13 ,  H01L24/742 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/02166 ,  H01L2224/02313 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0382 ,  H01L2224/03826 ,  H01L2224/03827 ,  H01L2224/0401 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11003 ,  H01L2224/11013 ,  H01L2224/1111 ,  H01L2224/11312 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13014 ,  H01L2224/13018 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/81815 ,  H01L2924/066 ,  H01L2924/0695 ,  H01L2924/07025 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01201

Abstract: Wafers include multiple bulk redistribution layers. A terminal contact pad is on a surface of one of the bulk redistribution layers. A final redistribution layer is formed on the surface and in contact with the terminal contact pad. The final redistribution layer is formed from a material other than a material of the plurality of bulk redistribution layers. A solder ball is formed on the terminal contact pad.

公开(公告)号：US09966355B2

公开(公告)日：2018-05-08

申请号：US14399351

申请日：2013-05-07

Applicant: Heraeus Materials Technology GmbH & Co. KG

Inventor： Eugen Milke ,  Peter Prenosil ,  Sven Thomas

IPC: B32B15/01 ,  B21F9/00 ,  B23K1/00 ,  C22C9/00 ,  C22C21/00 ,  H01L23/00 ,  H01B1/02 ,  C22F1/04 ,  C22F1/08

CPC classification number: H01L24/45 ,  B21F9/005 ,  B23K1/0016 ,  B32B15/01 ,  C22C9/00 ,  C22C21/00 ,  C22F1/04 ,  C22F1/08 ,  H01B1/023 ,  H01B1/026 ,  H01L24/43 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/43848 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45541 ,  H01L2224/45565 ,  H01L2224/45617 ,  H01L2224/45624 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/4823 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/01322 ,  H01L2924/1203 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/1304 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/2076 ,  Y10T428/1275 ,  H01L2924/00014 ,  H01L2924/01201 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01205 ,  H01L2924/00 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2224/45139 ,  H01L2924/00012 ,  H01L2924/01049 ,  H01L2924/01006

Abstract: A wire, preferably a bonding wire for bonding in microelectronics, contains a copper core with a surface and coating layer containing aluminum superimposed over the surface of the copper core. The ratio of the thickness of the coating layer to the diameter of the copper core is from 0.05 to 0.2 μm. The wire has a diameter in the range of from 100 μm to 600 μm and specified standard deviations of the diameter of the copper core and of the thickness of the coating layer. The invention further relates to a process for making a wire, to a wire obtained by the process, to an electric device containing at least two elements and the wire, to a propelled device containing the electric device, and to a process of connecting two elements through the wire by wedge bonding.

公开(公告)号：US09837367B1

公开(公告)日：2017-12-05

申请号：US15297269

申请日：2016-10-19

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Toyohiro Aoki ,  Takashi Hisada ,  Eiji I. Nakamura

IPC: H01L23/00

CPC classification number: H01L24/11 ,  H01L23/3171 ,  H01L24/02 ,  H01L24/13 ,  H01L24/742 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/02166 ,  H01L2224/024 ,  H01L2224/0382 ,  H01L2224/03826 ,  H01L2224/03827 ,  H01L2224/0401 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11003 ,  H01L2224/11312 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/11849 ,  H01L2224/13014 ,  H01L2224/13018 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/81815 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01201

Abstract: Wafers and methods of forming solder balls include forming a final redistribution layer over terminal contact pad on a surface of a wafer. The wafer includes multiple bulk redistribution layers. A hole is etched in the final redistribution layer to expose the terminal contact pad. Solder is injected into the hole using an injection nozzle that is in direct contact with the final redistribution layer. The final redistribution layer is etched back. The injected solder is reflowed to form a solder ball.

公开(公告)号：US09230892B2

公开(公告)日：2016-01-05

申请号：US14373994

申请日：2013-03-12

Applicant: SUMITOMO BAKELITE CO., LTD.

Inventor： Shingo Itoh

IPC: H01L23/49 ,  H01L23/495 ,  H01L23/00 ,  H01L21/56 ,  H01L23/29 ,  H01L23/31

CPC classification number: H01L23/49575 ,  H01L21/56 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/4321 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48451 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48824 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83862 ,  H01L2224/85205 ,  H01L2224/85948 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/20106 ,  H01L2924/01201 ,  H01L2924/01203 ,  H01L2924/01202 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/078 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01014 ,  H01L2924/01056 ,  H01L2924/0102 ,  H01L2924/01038 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01105 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2224/45664 ,  H01L2924/01005 ,  H01L2924/01033

Abstract: A semiconductor device includes a semiconductor element that is mounted on a substrate, an electrode pad that contains aluminum as a main component and is provided in the semiconductor element, a copper wire that contains copper as a main component and connects a connection terminal provided on the substrate and the electrode pad, and an encapsulant resin that encapsulates the semiconductor element and the copper wire. When the semiconductor device is heated at 200° C. for 16 hours in the atmosphere, a barrier layer containing any metal selected from palladium and platinum is farmed at a junction between the copper wire and the electrode pad.

Abstract translation: 半导体器件包括安装在基板上的半导体元件，以铝为主要元件并设置在半导体元件中的电极焊盘，以铜为主要元件的铜线，并连接设置在该基板上的连接端子 基板和电极焊盘，以及密封半导体元件和铜线的密封树脂。 当在大气中将半导体器件在200℃下加热16小时时，在铜线和电极焊盘之间的接合处种植含有选自钯和铂的任何金属的阻挡层。

公开(公告)号：US20150155252A1

公开(公告)日：2015-06-04

申请号：US14399351

申请日：2013-05-07

Applicant: Heraeus Materials Technology GmbH & Co. KG

Inventor： Eugen Milke ,  Peter Prenosil ,  Sven Thomas

IPC: H01L23/00 ,  B21F9/00 ,  C22C21/00 ,  C22F1/08 ,  C22F1/04 ,  C22C9/00 ,  B32B15/01 ,  B23K1/00

CPC classification number: H01L24/45 ,  B21F9/005 ,  B23K1/0016 ,  B32B15/01 ,  C22C9/00 ,  C22C21/00 ,  C22F1/04 ,  C22F1/08 ,  H01B1/023 ,  H01B1/026 ,  H01L24/43 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/43848 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45541 ,  H01L2224/45565 ,  H01L2224/45617 ,  H01L2224/45624 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/4823 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/01322 ,  H01L2924/1203 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/1304 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/2076 ,  Y10T428/1275 ,  H01L2924/00014 ,  H01L2924/01201 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01205 ,  H01L2924/00 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2224/45139 ,  H01L2924/00012 ,  H01L2924/01049 ,  H01L2924/01006

Abstract: A wire, preferably a bonding wire for bonding in microelectronics, contains a copper core with a surface and coating layer containing aluminum superimposed over the surface of the copper core. The ratio of the thickness of the coating layer to the diameter of the copper core is from 0.05 to 0.2 μm. The wire has a diameter in the range of from 100 μm to 600 μm and specified standard deviations of the diameter of the copper core and of the thickness of the coating layer. The invention further relates to a process for making a wire, to a wire obtained by the process, to an electric device containing at least two elements and the wire, to a propelled device containing the electric device, and to a process of connecting two elements through the wire by wedge bonding.

Abstract translation: 电线，优选用于在微电子学中接合的接合线包含铜芯，其表面和包含铝的涂层叠加在铜芯的表面上。 涂层的厚度与铜芯的直径之比为0.05〜0.2μm。 线材的直径在100μm至600μm的范围内，铜芯直径和涂层厚度的特定标准偏差。 本发明还涉及一种将通过该方法获得的线材的线材制造成包含至少两个元件和电线的电气设备到包含电气设备的推进设备的方法，以及连接两个元件的过程 通过电线通过楔形键合。

公开(公告)号：US08441128B2

公开(公告)日：2013-05-14

申请号：US13210453

申请日：2011-08-16

Applicant: Daniel Domes

Inventor： Daniel Domes

IPC: H01L23/36 ,  H03K17/56

CPC classification number: H01L25/072 ,  H01L23/3735 ,  H01L23/49833 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/291 ,  H01L2224/29339 ,  H01L2224/2939 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48132 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/00011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/19107 ,  H01L2924/3011 ,  H02M7/003 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01005 ,  H01L2924/01201 ,  H01L2924/00014

Abstract: A semiconductor arrangement includes a circuit carrier, bonding wire and at least N half bridge circuits. The circuit carrier includes a first metallization layer, a second metallization layer, an intermediate metallization layer arranged between the first metallization layer and the second metallization layer, a first insulation layer arranged between the intermediate metallization layer and the second metallization layer, and a second insulation layer arranged between the first metallization layer and the intermediate metallization layer. Each half bridge circuit includes a controllable first semiconductor switch and a controllable second semiconductor switch. The first semiconductor switch and the second semiconductor switch of each half bridge circuit are arranged on that side of the first metallization layer of the circuit carrier facing away from the second insulation layer. The bonding wire is directly bonded to the intermediate metallization layer of the circuit carrier at a first bonding location.

Abstract translation: 半导体装置包括电路载体，接合线和至少N个半桥电路。 电路载体包括第一金属化层，第二金属化层，布置在第一金属化层和第二金属化层之间的中间金属化层，布置在中间金属化层和第二金属化层之间的第一绝缘层，以及第二绝缘层 层，布置在第一金属化层和中间金属化层之间。 每个半桥电路包括可控的第一半导体开关和可控的第二半导体开关。 每个半桥电路的第一半导体开关和第二半导体开关被布置在电路载体的第一金属化层的背离第二绝缘层的一侧。 接合线在第一接合位置处直接接合到电路载体的中间金属化层。

公开(公告)号：US20120292774A1

公开(公告)日：2012-11-22

申请号：US13519226

申请日：2011-01-20

Applicant: Shingo Itoh

Inventor： Shingo Itoh

IPC: H01L23/49

CPC classification number: H01L21/56 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49503 ,  H01L24/05 ,  H01L24/09 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05144 ,  H01L2224/05164 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01105 ,  H01L2924/01201 ,  H01L2924/01202 ,  H01L2924/01204 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/01039 ,  H01L2924/01049 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/0002 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2224/43848 ,  H01L2924/20751

Abstract: A semiconductor device of the present invention includes a semiconductor element having an electrode pad; a substrate over which the semiconductor element is mounted and has an electrical bonding part; and a bonding wire electrically connecting the electrode pad to the electrical bonding part, wherein a main metal component of the electrode pad is the same or different from a main metal component of the bonding wire, and when the main metal component of the electrode pad is different from the main metal components of the bonding wire, a rate of interdiffusion of the main metal components of the bonding wire and the electrode pad at a junction of the bonding wire and the electrode pad under a post-curing temperature of an encapsulating resin is lower than that of interdiffusion of gold (Au) and aluminum (Al) at a junction of aluminum (Al) and gold (Au) under the post-curing temperature.

Abstract translation: 本发明的半导体器件包括具有电极焊盘的半导体元件; 半导体元件安装在其上并具有电接合部的基板; 以及将电极焊盘电连接到电接合部分的接合线，其中电极焊盘的主金属部件与接合线的主金属部件相同或不同，并且当电极焊盘的主金属部件为 与接合线的主要金属成分不同，在封装树脂的后固化温度下，接合线和电极焊盘的接合处的接合线和电极焊盘的主金属成分的相互扩散率为 低于后固化温度下铝（Al）和金（Au）的接合处的金（Au）和铝（Al）的相互扩散。