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    ELECTRON EMITTING ELEMENT, ELECTRON SOURCE, AND IMAGE FORMING DEVICE
    85.
    发明专利
    ELECTRON EMITTING ELEMENT, ELECTRON SOURCE, AND IMAGE FORMING DEVICE 失效

    公开(公告)号：JPH09330676A

    公开(公告)日：1997-12-22

    申请号：JP16668896

    申请日：1996-06-07

    Applicant: CANON KK

    Inventor： TSUKAMOTO TAKEO ,  YAMANOBE MASATO

    IPC: H01J31/12 ,  H01J1/316 ,  H01J3/08 ,  H01J29/04 ,  H01J29/52 ,  H01J31/15

    Abstract: PROBLEM TO BE SOLVED: To control an emission current with high accuracy at a high speed by providing the third electrode across an insulating layer on the substrate side of an electron emission section, and controlling the potential applied to this electrode. SOLUTION: An electron emission section 5 is constituted with high-resistance cracks formed on a part of a conductive film 4, a voltage is applied between element electrodes 2, 3 to emit electrons from the electron emission section 5. A conductive layer is set to a high potential by a high-voltage power supply, and the parallel electric field is formed across vacuum between an electron emitting element and a glass substrate 8. When a positive potential is applied to the third electrode 6, the emission current quantity is increased, and the electron emission efficiency is improved. When a negative potential is applied to the third electrode 6, the emission current quantity is decreased. When the thickness of an insulating layer 7 is set within the five times the thickness multiplied with the crack width in the electron emission section 5 by the relative dielectric constant of the insulating layer 7, the emission current quantity can be controlled with very small electric power.

    MULTIPOLAR FIELD ELECTRON EMISSION DEVICE AND MANUFACTURE THEREOF
    87.
    发明专利
    MULTIPOLAR FIELD ELECTRON EMISSION DEVICE AND MANUFACTURE THEREOF 失效

    公开(公告)号：JPH05182582A

    公开(公告)日：1993-07-23

    申请号：JP8038092

    申请日：1992-03-02

    Applicant: SEIKO EPSON CORP

    Inventor： KOMATSU HIROSHI

    IPC: H01J1/304 ,  H01J1/46 ,  H01J1/52 ,  H01J3/08 ,  H01J3/40 ,  H01J9/02 ,  H01J19/24 ,  H01J19/38 ,  H01J21/10

    Abstract: PURPOSE:To enable high input resistance, a linear transmission characteristic and high mutual conductance by providing a cathode electrode, a gate electrode, and an anode electrode, and providing a control electrode between cathode and anode. CONSTITUTION:A gate electrode 5 comprising an Mo thin film and a control electrode 6 are provided on the surface of a plane substrate 1 of quartz. A banded insulating layer 2 comprising a thin film of silicon dioxide is provided adjacent the gate electrode 5 and the control electrode 6 and a cathode electrode 3 having overhanging emission protrusions 4 is provided on the surface of the banded insulating layer 2 located adjacent the gate electrode 5. An anode electrode 7 is provided on the surface of the banded insulating layer 2 located adjacent the control electrode 6. A power amplifier of high input resistance, a linear transmission characteristic and high mutual conductance can thus be obtained.

    ELECTRON BEAM GENERATOR, AND IMAGE DISPLAY DEVICE AND LIGHT SIGNAL SUPPLY DEVICE USING THE SAME
    88.
    发明专利
    ELECTRON BEAM GENERATOR, AND IMAGE DISPLAY DEVICE AND LIGHT SIGNAL SUPPLY DEVICE USING THE SAME 失效

    公开(公告)号：JPH04132137A

    公开(公告)日：1992-05-06

    申请号：JP25169790

    申请日：1990-09-25

    Applicant: CANON KK

    Inventor： ONO HARUTO ,  NOMURA ICHIRO ,  MISHINA SHINYA ,  SUZUKI HIDETOSHI ,  KANEKO TETSUYA

    IPC: H01J3/08 ,  H01J1/30 ,  H01J1/316 ,  H01J29/04 ,  H01J29/46 ,  H01J29/52 ,  H01J29/62 ,  H01J31/12

    Abstract: PURPOSE:To facilitate the positioning of a modulating electrode and an electron discharge portion and make manufacture simple, by making the width of a low potential side electrode larger than that of a high potential side electrode which, together with the low potential side electrode, pinches an electron beam generator electron discharge portion, and arranging a modulating electrode on either side of the two sides. CONSTITUTION:An electron discharge element is desired to be a cold cathode, and above all, the one called a surface conduction form discharge element is preferable. A modulating electrode is arranged on either side of the electrodes pinching an electron discharge 36, but arranging it on the high potential side element electrode 35 side is preferred. Also, the width of a low potential electrode is made larger than that of a high potential electrode. As a result, the precision of an image element is effectively improved, and as an electron beam emitted from an electron discharge portion is cut off, the increase of the absolute value of voltage impressed on an modulating electrode is restrained. On the same surface of a base 31, surface conduction form electron discharge elements and modulating electrodes 40 are provided, and beam electron sources are formed by arranging a plurality of electron discharge portions 36 between element wiring electrodes 34a and 34b. Modulating electrodes 40 are connected to modulation wiring electrodes 41 through the contact holes of insulator films 33.

    SOURCE OF HOT ELECTRON BEAM AND ITS MANUFACTURE
    89.
    发明专利
    SOURCE OF HOT ELECTRON BEAM AND ITS MANUFACTURE 失效

    公开(公告)号：JPH02257540A

    公开(公告)日：1990-10-18

    申请号：JP7660289

    申请日：1989-03-30

    Applicant: CANON KK

    Inventor： UDA YOSHIKI ,  NOMURA ICHIRO ,  KANEKO TETSUYA ,  ONO HARUTO ,  SUZUKI HIDETOSHI

    IPC: H01J1/16 ,  H01J1/15 ,  H01J1/18 ,  H01J3/08 ,  H01J9/04 ,  H01J29/04 ,  H01J31/15

    Abstract: PURPOSE:To prolong the life time of an image display device by furnishing an upper metal layer on the surface of a base board, wherein part of said metal layer constitutes hot electron emitting part, and providing a lower metal layer between the upper metal layer and the base board surface. CONSTITUTION:A plurality of hot electron emitting parts 6 are placed in alignment on an insulation base board 1, wherein the part under these emitting parts 6 is constructed in hollow structure to support conductive support layers 4a, 4b, which work also as conductive layer for current supply to a filament layer 5. Thereunder a cutoff grid 2 is provided on the surface of the base board with an insulating layer 3 interposed. A potential difference is applied between the conductive support layers 4a, 4b and the filament layer 5, and a narrow portion as part of this filament layer 5, i.e., hot electron emitting part 6, runs temperature and emits electrons. This element is prepared using Ta as filament material, Au as cutoff grid layer 2 formed on the insulation base board 1 by means of EB evaporation, SiO2 as insulating layer 3, Cu as conductive support layers 4a, 4b, and Ta as filament layer 5.

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