Abstract:
PROBLEM TO BE SOLVED: To provide an integrated circuit including a means which includes producing at least one temperature gradient in at least one region of an integrated circuit resulting from a flow of an electric current in at least a part of the integrated circuit during operation of the integrated circuit, and producing electrical energy through that temperature gradient. SOLUTION: The integrated circuit includes: at least one region RG containing at least one thermoelectric material MTH, which is configured to be subjected to at least one temperature gradient produced by a flow of an electric current in at least parts PSTA, PSTB of the integrated circuit during operation of the integrated circuit; and an electric conduction outputting means connected to that region RG, which transfers electric energy produced from the thermoelectric material MTH. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method of generating electrical energy in an integrated circuit.SOLUTION: The integrated circuit includes at least one three-dimensional enclosed space CG made within the integrated circuit CI and containing at least one piezoelectric element EPZI, at least one object BL housed in a free manner in the three-dimensional enclosed space CG or each three-dimensional enclosed space CG, and an electrically conducting output means MSE coupled to the piezoelectric element EPZI and configured to deliver electrical energy resulting from at least one impact between the object BLi and the piezoelectric element EPZI during a relative motion of the object BL and the corresponding enclosed space CG.
Abstract:
PROBLEM TO BE SOLVED: To detect an attack by fault injection on a memory device.SOLUTION: A memory device includes a fault injection attack detection means including a group of memory planes (PM) each storing a block (BL) having data bits and m-parity bits, and a means (ML) for reading each bit of the block, and a verification means for performing a parity check based on the read value of each data bit and the read value of each parity bit at the time of reading the block. The memory plane (PM) includes reference memory cells disposed between the memory cells of the group to form separate packets (PQ) of m-memory cells. Each reference memory cell stores a reference bit changed with a reference value during the fault injection attack. Each packet of m-memory cells stores m-bits of the block associated with different parities.