公开(公告)号：KR20180018597A

公开(公告)日：2018-02-21

申请号：KR20180008508

申请日：2018-01-23

Applicant: ASM INT N V

Inventor： MATERO RAIJA ,  LINDROOS LINDA ,  SPREY HESSEL ,  MAES JAN WILLEM ,  DE ROEST DAVID ,  PIERREUX DIETER ,  VAN DER JEUGD KEES ,  DURZO LUCIA ,  BLOMBERG TOM E

IPC: H01L21/02 ,  H01L21/306

CPC classification number: H01L21/0228 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/2225 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517

Abstract: 안티몬산화물박막이원자층증착에의하여안티몬반응물및 산소공급원을사용하여증착된다. 안티몬반응물은 SbCl와같은안티몬할로겐화물, 안티몬알킬아민및 Sb(OEt)와같은안티몬알콕사이드를포함할수 있다. 산소공급원은, 예를들어, 오존일수 있다. 일부구현예들에서안티몬산화물박막은회분식반응기에서증착된다. 안티몬산화물박막은, 예를들어, 식각정지층또는희생층으로서작용할수 있다.

Abstract translation: 通过使用锑反应物和氧源的原子层沉积来沉积氧化锑薄膜。 锑反应物可以包括锑卤化物，例如SbCl 3，锑烷基胺和锑醇盐，例如Sb（OEt）3。 氧源可以是例如臭氧。 在一些实施例中，氧化锑薄膜沉积在间歇式反应器中。 氧化锑薄膜可以用作例如刻蚀停止层或牺牲层。

公开(公告)号：JP2001223213A

公开(公告)日：2001-08-17

申请号：JP2000359806

申请日：2000-11-27

Applicant: ASM INT NV

Inventor： WIERTS ERIK ,  VERMEULEN WILLEM JOB CORNELIS ,  BEULENS JACOBUS JOHANNES ,  PHILIPPSEN BENGT ,  OOSTERLAKEN THEODORUS GERARDUS

IPC: C23C16/40 ,  C23C16/448 ,  C23C16/52 ,  H01L21/00 ,  H01L21/31 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a safe treating method and device, by which the explosion of oxygen and nitrogen can be avoided when an oxide layer is formed on a semiconductor material using steam. SOLUTION: A safe treating method for avoiding the explosion of a third gas mixture is a method which is characterized by that hydrogen-containing first gas is mixed with oxygen-containing second gas for forming steam and the hydrogen concentration in the first gas and/or the oxygen concentration in the second gas and/or the ratio of the flow velocity of the first gas to the flow velocity of the second gas is set so that the explosion of a third gas mixture, which is formed from those first and second gases, is avoided between the mixing of the first gas with the second gas and a wafer treating furnace is a safe device for avoiding the explosion of the third gas mixture.

公开(公告)号：JP2000031251A

公开(公告)日：2000-01-28

申请号：JP13000099

申请日：1999-05-11

Applicant: ASM INT NV

Inventor： BEULENS JACOBUS JOHANNES

IPC: H01L21/683 ,  C23C16/455 ,  C23C16/458 ,  H01L21/205 ,  H01L21/22 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To uniformly distribute gas on a wafer, by arranging a gas distributor at least above each wafer, and providing a gas distributor with a number of opening parts which supply gas to a wafer therethrough. SOLUTION: A wafer rack 1 consists of two side plates 3 arranged in opposition mutually. Each side plate 3 has a supporting ridge 4 for loading a wafer 2 therebetween. A gas distribution chamber 5 is arranged between two wafers 2, and the gas distribution chamber 5 is connected to one channel 6 in each side plate 3 in both sides. Each gas distribution chamber 5 consists of an upper plate 7 and a bottom plate 8, and the bottom plate 8 has a number of opening parts 9. As a result, gas flow in a radius direction is formed on each wafer 2 and gas is distributed uniformly on the wafer 2.

公开(公告)号：JP2002151565A

公开(公告)日：2002-05-24

申请号：JP2001298232

申请日：2001-09-27

Applicant: ASM INT NV

Inventor： ZINGER JAN ,  DE RIDDER CHRISTIANUS G M

IPC: H01L21/68 ,  H01L21/673 ,  H01L21/677

Abstract: PROBLEM TO BE SOLVED: To provide a wafer handling system which can be applied to both a 200 mm wafer and a 300 mm wafer. SOLUTION: This system is constituted first to handle a standard 300 mm FOUP cassette. In order to handle a 200 mm wafer open cassette, the system is equipped with a load port adapter frame for adapting a cassette in an mount/ dismount station, a cassette handler adapter which is installed on a cassette handler end effector and adapts the 200 mm open cassette, a store adapter frame which appropriates a compartment for accommodating the 300 mm FOUP to a compartment for accommodating the 200 mm open cassette, and a transfer type FOUP which holds the 200 mm open cassette on a cassette transfer platform and forms an interface between a cassette and a wafer handling apparatus.

公开(公告)号：JPH0349216A

公开(公告)日：1991-03-04

申请号：JP12933590

申请日：1990-05-21

Applicant: ASM INT

Inventor： EICHI PIITAA DABURIYUU HEI ,  UIRIAMU EI MAZAKU ,  RABINDERU KEI AGARUWARU ,  JIYON EICHI KAATEIN ,  POORU BII BURAUN ,  JIYOO AARU SUMISU

IPC: H01L21/205 ,  C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  H01L21/00 ,  H01L21/31

Abstract: PURPOSE: To ensure excellent adhesion by combining upper gas diffusion heads, arranged vertically with respective susceptors, with a downstream flow control structure thereby directing the reaction gas flow uniformly in the radial direction across a supported wafer. CONSTITUTION: In a CVD reactor 10 having one station for processing at least one wafer, a plurality of independently heating susceptors 30 arranged circularly supports and heats one of a plurality of wafers in a processing chamber. Upper gas diffusion heads 32, arranged vertically with respective susceptors 30, are combined with a downstream flow control structure to direct a reaction gas flow uniformly in the radial direction across a supported wafer. This processor has high adhesion, low pinhole density, good step coverage, appropriate electrical characteristics, etc., and suitable for production of an integrated circuit.

公开(公告)号：JP2002060947A

公开(公告)日：2002-02-28

申请号：JP2001198085

申请日：2001-06-29

Applicant: ASM INT NV

Inventor： MARUKUREETO ALBERTIN AN-MARIE

IPC: C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  H01L21/31

Abstract: PROBLEM TO BE SOLVED: To provide a method for applying plating of a thin film onto a base material by an atomic layer plating method. SOLUTION: The atomic layer plating is used for providing firm films on a plurality of disk type base materials. The base materials are charged to the inside of a boat so as to be separated in a furnace and are heated to a plating temperature. In the furnace, the base materials are exposed to the alternate continuous pulses of at least two kinds of mutually reactive reactants in such a manner that the plating temperature is sufficiently high for preventing the condensation of the at least two kinds of reactants on the surfaces, but is not high so as to cause the individually significant thermal decomposition to the at least two kinds of reactants.

公开(公告)号：JP2001250788A

公开(公告)日：2001-09-14

申请号：JP2000390887

申请日：2000-12-22

Applicant: ASM INT NV

Inventor： SNIJDERS GERT-JAN ,  KUZNETSOV VLADIMIR IVANOVICH ,  DE RIDDER CHRISTIANUS GERARDUS ,  TERHORST HERBERT

IPC: H01L21/00 ,  H01L21/26 ,  H01L21/683 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To solve the problem in a heat treatment system, that first and second housing parts provided for avoiding uneven transfer of heat are difficult to be enclosed appropriately. SOLUTION: An apparatus for treating a wafer manufactured from a semiconductor material, the apparatus comprising a first and second housing parts 2 arranged for movement away from and toward each other, the two housing parts bounding a treatment chamber 3, while around the treatment chamber there is provided a first groove 8 connected to gas discharge means, while in at least one of the two boundary surfaces 5 there is provided a second groove 12 connected to the gas feed means, the first groove located radially within the second groove, and, in use, the pressure created by the gas feed means being such that from the second groove, gas flows both in radial inward and in radial outward direction in the gap between the first and second boundary surface.

公开(公告)号：JP2000091249A

公开(公告)日：2000-03-31

申请号：JP24861399

申请日：1999-09-02

Applicant: ASM INT NV

Inventor： VLADIMIR IVANOVICH KUZNETSOV

IPC: H01L21/22 ,  C23C16/455 ,  C30B25/10 ,  C30B25/14 ,  C30B31/12 ,  C30B31/16 ,  F27D11/02 ,  H01L21/00 ,  H01L21/205 ,  H01L21/324

Abstract: PROBLEM TO BE SOLVED: To reduce the size of a heating facility and, in addition, the expenses incurred in connection with the heating facility and gas supply, by providing a gas supply means which is provided to at least the wall of a reactor and has a plurality of passages provided in the body of the reactor, and heating the passages by means of a heating means also provided in the body of the reactor. SOLUTION: A reactor for treating a wafer at a high temperature is provided with a heating device which heats wafers, and a gas supply means which supplies a process gas for the wafers. The gas supply means is provided to at least the wall of a reactor and has a plurality of passages 8 and 9 provided in the body of the reactor. In addition, the passages are heated by means of a heating means 16 provided in the body of the reactor. The heating device is provided with the heating means 16. Such a floating wafer reactor is provided that a treating division is limited between the two facing walls of the reactor and each wall has gas discharging openings 6.

公开(公告)号：JPH09199570A

公开(公告)日：1997-07-31

申请号：JP33626296

申请日：1996-12-03

Applicant: ASM INT

Inventor： JIYAN JINGAA ,  KORUNERIUSU HAANSUTORA ,  RUDEI SHIMERU

IPC: B25J9/06 ,  B65G49/07 ,  H01L21/677 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To determine the position of a wafer concerning the position of a retaining arm during the movement of a robot, and keep the moving time as short as possible, by installing a position adjusting equipment which contains the arrangement of photo detectors and is provided with a computer for determining the position and the velocity of a product. SOLUTION: This equipment consists of a movable transferring equipment which captures a product 8, transfers it, and leaves it at a second position, an equipment which determines the position of the product 8 on the transferring equipment, and a position adjusting equipment which adjusts the movement of the transferring equipment and contains the arrangement of fixed photo detectors 17, 18. These are arranged in the direction which is not parallel with the line of extension of a path from a first position of the product 8 to a second point. A computer which determines the position of the product 8 and the velocity of the transferring equipment on the basis of the output of the arrangement of photo detectors 17, 18 is installed, and connected with the position adjusting equipment.

公开(公告)号：JPH08327238A

公开(公告)日：1996-12-13

申请号：JP9963396

申请日：1996-03-29

Applicant: ASM INT

Inventor： HUUSSEN FRANK ,  BERENPAS GERARD ,  HASPER ALBERT ,  DE RIDDER CHRIS G M

IPC: H05B3/00 ,  F27B1/09 ,  F27B1/10 ,  H01L21/00 ,  H01L21/02 ,  H01L21/22

Abstract: PROBLEM TO BE SOLVED: To minimize heat loss occurring as heat flows from an inner sleeve to a support plate by arranging the support sleeve around the lower end portion of the inner sleeve made of a heat-resistant material and the lower portion of the support sleeve on the support plate. SOLUTION: An inner sleeve 2 is made of a material resisting at least a temperature of 1,200 deg.C, and a support sleeve 9 is arranged around the lower end portion of the inner sleeve 2. The lower portion of the support sleeve 9 rests on a support plate 10. A collar 17 made of a quartz material is provided between the lower end of the inner sleeve 2 and the support plate 10. In order to compensate for a difference in elongation, the collar 17 is not directly attached to the support plate 10, but supported by a resilience of a spring 21 at a projection 19 received in a space 20, which compensates for a difference in thermal expansion. As a result, it is possible to minimize heat loss occurring as heat flows from the inner sleeve 2 to the support plate 10.