公开(公告)号：JP2003226970A

公开(公告)日：2003-08-15

申请号：JP2003019678

申请日：2003-01-29

Applicant: ASM MICROCHEMISTRY OY

Inventor： AALTONEN TITTA ,  ALEN PETRA ,  RITALA MIKKO ,  LESKELAE MARKKU

IPC: C23C16/18 ,  C23C16/44 ,  C23C16/455 ,  G11B5/66 ,  G11B5/85 ,  H01F10/32 ,  H01L21/02 ,  H01L21/285 ,  H01L21/316 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a method of depositing a conductive noble metal thin film on a substrate generally by atomic layer deposition. SOLUTION: As one embodiment, the substrate having a surface is supplied to a reaction chamber and a vaporized noble metal precursor is charged pulse in the reaction chamber. A molecular layer of the metal precursor of one or less layer is deposited on the substrate by bringing the vaporized precursor into contact with the surface of the substrate. In next step, the pulse of molecular oxygen-containing gas is supplied to the reaction chamber to react with the precursor on the substrate. The high quality metal thin film is deposited by the reaction of the metal with oxygen. As another one embodiment, a conductive layer is deposited to have a structure having via of high aspect ratio, groove or a partially swelled field or a structure having other same surface structures which make corse. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2001348666A

公开(公告)日：2001-12-18

申请号：JP2001117413

申请日：2001-04-16

Applicant: ASM MICROCHEMISTRY OY

Inventor： LINDFORS SVEN

IPC: C23C16/44 ,  C23C16/40 ,  C23C16/455 ,  C30B25/02 ,  C30B25/08 ,  C30B25/14 ,  H01L21/205

Abstract: PROBLEM TO BE SOLVED: To provide a method and an apparatus for growing a thin film on a substrate by an ALD process. SOLUTION: The apparatus comprises a reaction chamber inside which a substrate can be deposited, a plurality of inlet channels communicating with the reaction chamber and suitable for feeding a vapor phase type reactant used in a thin film growing process into the reaction chamber, at least one outlet channel communicating with the reaction chamber and suitable for flowing out a reaction product and the reactant of the excessive quantity, and a preliminary reaction chamber disposed on the upstream side immediately close to the reaction chamber in which a solid product can be formed by the reaction of the reaction products of the continuous vapor phase pulse in the vapor phase with each other in the preliminary reaction chamber forming a first reaction zone, and the reaction chamber forming a second reaction zone can be actuated under the conduction for bringing about the ALD growth of the thin film.

公开(公告)号：JP2003055093A

公开(公告)日：2003-02-26

申请号：JP2001236874

申请日：2001-08-03

Applicant: Asm Microchemistry Oy ,  エイエスエム マイクロケミストリ オーワイ

Inventor： JAAKKO NIINISTO ,  PUTKONEN MATTI ,  RITALA MIKKO ,  PETRI RAISANEN ,  ANTTI NISKANEN ,  LESKELA MARKKU

IPC: C01F17/00 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C30B29/16 ,  H01L21/316

CPC classification number: C23C16/45553 ,  C23C16/40 ,  C23C16/405

Abstract: PROBLEM TO BE SOLVED: To provide a process for depositing yttrium oxide and lanthanum oxide thin films by an ALE (atomic layer epitaxial growth) process.
SOLUTION: The source chemicals of the metals are cyclopentadienyl compounds of yttrium and lanthanum. Suitable deposition temperatures for yttrium oxide are between 200 to 400°C when the deposition pressure is between 1 and 2 mbar. Suitable deposition temperature for lanthanum oxide is between 160 and 165°C when the deposition temperature is between 1 and 2 mbar.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：提供通过ALE（原子层外延生长）工艺沉积氧化钇和氧化镧薄膜的方法。 解决方案：金属的源化学品是钇和镧的环戊二烯基化合物。 当沉积压力为1至2毫巴时，氧化钇的合适沉积温度为200至400摄氏度。 当沉积温度在1至2毫巴之间时，氧化镧的合适沉积温度为160至165摄氏度。

公开(公告)号：JP2002353154A

公开(公告)日：2002-12-06

申请号：JP2002060518

申请日：2002-03-06

Applicant: ASM MICROCHEMISTRY OY

Inventor： BONDESTAM NIKLAS ,  LINDFORS SVEN

IPC: B01J19/00 ,  C23C16/30 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  H01L21/205

Abstract: PROBLEM TO BE SOLVED: To provide an ALD device and an ALD method which can improve control of ALD process and automate conveyance of substrates into and out of a reaction chamber. SOLUTION: An ALD device if one for growing a thin film on a substrate 7 structured, so that the substrate 7 is exposed to an alternate surface reaction with a vapor phase reaction substance, and the ALD device contains a plurality of reaction chamber internal walls 1 which sections the reaction chamber; one or a plurality of inlet parts 20 for supplying the vapor phase reaction substance to the reaction chamber; one or a plurality of discharge parts 30 for discharging gaseous sub-products and an excessive reaction substances from the reaction chamber; a substrate support part 2 for supporting the substrate 7 in the reaction chamber during processing; a first temperature adjusting means for maintaining the substrate 7 at a desirable temperature, while supported by the substrate support part 2; and a second temperature adjusting means for maintaining the reaction chamber internal walls 1 at the desired temperature. The first temperature adjusting means and the second temperature adjusting means can be controlled independently.

公开(公告)号：JP2002004054A

公开(公告)日：2002-01-09

申请号：JP2001117468

申请日：2001-04-16

Applicant: ASM MICROCHEMISTRY OY

Inventor： LINDFORS SVEN ,  SOININEN PEKKA T

IPC: B03C3/28 ,  B01J3/00 ,  B01J3/02 ,  B01J19/00 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  H01L21/205

Abstract: PROBLEM TO BE SOLVED: To provide a method by which an ALD method can be performed while minimizing cost and wear of a processing system by using a solid or liquid reactant source and also using a purifier for removing the solid particles or mist emitted from a precursor source. SOLUTION: In this method, a thin film is grown on a substrate placed in a reaction chamber according to an ALD method. A vaporized reactant is introduced from the reactant source via a first conduit into the reaction chamber. The above reactant is supplied repeatedly in the form of a vapor-phase pulse alternately with a vapor-phase pulse of at least one other reactant into the above reaction chamber and allowed to react with the surface of the substrate, by which a thin film compound is deposited on the substrate. By supplying, between the respective vapor-phase pulses of the different reactants, inert gas into the first conduit via a second conduit connected to the above first conduit a vapor-phase barrier is formed against the flow of the vapor-phase reactant flowing from the reactant source-via the first conduit into the reaction chamber, and the inert gas is drawn out of the first conduit via a third conduit connected to the first conduit on the upstream side of the second conduit.

公开(公告)号：JP2001200363A

公开(公告)日：2001-07-24

申请号：JP2000368569

申请日：2000-12-04

Applicant: ASM MICROCHEMISTRY OY

Inventor： IBO RAAIEEMAAKAA ,  HAUKKA SUVI P ,  ERNST H A GURANNEMAN

IPC: C23C16/24 ,  C23C16/40 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a capacitor on an integrated circuit. SOLUTION: This method includes the construction of a bottom electrode containing a silicon layer subjected to texture working and the deposition of a dielectric layer on the silicon layer subjected to texture working, wherein the deposition includes the formation of a single layer on the texture-worked silicon layer by about 1 of the first material or less by the exposure to the first reactant seed and the leaving of a single layer of about 1 of the second material or less by the reaction of the second reactant seed with the first material.

公开(公告)号：JP2003059016A

公开(公告)日：2003-02-28

申请号：JP2002135407

申请日：2002-05-10

Applicant: Asm Microchemistry Oy ,  エイエスエム マイクロケミストリ オーワイ

Inventor： HUJANEN JUHA

IPC: C23C16/44 ,  C08F2/46 ,  G11B5/235 ,  G11B5/31 ,  G11B5/39 ,  H01L43/08 ,  H01L43/12

CPC classification number: G11B5/3109 ,  G11B5/235 ,  G11B5/313 ,  G11B5/3903 ,  Y10T29/49032 ,  Y10T428/11 ,  Y10T428/1193

Abstract: PROBLEM TO BE SOLVED: To obtain an insulating layer having high dielectric breakdown voltage and large step coverage for a magnetic reading head. SOLUTION: The structure and the method for manufacturing a magnetic reading head include a process of forming a fill layer for a magnetic reading head gap by using an atomic layer deposition(ALD) method. The fill layer contains an insulating material, preferably aluminum oxide, aluminum nitride, their mixture or layered structure. Alternatively, a material having a thermal conductivity higher than aluminum oxide (such as beryllium oxide and boron nitride) may be used in a layer in the aluminum oxide structure. The thickness of the head gap fill layer formed by the ALD method is in the range from about 5 nm to 100 nm, more preferably from about 10 nm to 40 nm.

Abstract translation: 要解决的问题：为了获得具有高介电击穿电压和磁读头的大步距覆盖层的绝缘层。 解决方案：用于制造磁读头的结构和方法包括通过使用原子层沉积（ALD）方法形成用于磁读头的间隙的填充层的工艺。 填充层包含绝缘材料，优选氧化铝，氮化铝，它们的混合物或分层结构。 或者，可以在氧化铝结构中的层中使用具有高于氧化铝（例如氧化铍和氮化硼）的导热率的材料。 通过ALD法形成的头部间隙填充层的厚度在约5nm至100nm的范围内，更优选在约10nm至40nm的范围内。

公开(公告)号：JP2002161353A

公开(公告)日：2002-06-04

申请号：JP2001324382

申请日：2001-10-23

Applicant: ASM MICROCHEMISTRY OY

Inventor： SKARP JARMO ,  LINNERMO MERVI ,  ASIKAINEN TIMO

IPC: B32B9/00 ,  B32B15/20 ,  C23C14/08 ,  C23C14/58 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C18/12

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing an aluminum oxide thin film on a substrate by an ALD method, which includes a process of bonding a vaporizable organic-aluminum compound to a growth substrate, and of converting the bonded organic-aluminum compound into aluminum oxide. SOLUTION: This method includes converting the bonded aluminum compound into aluminum oxide, by bringing the compound into contact with a source for generating a reactive vapor of oxygen other than water, and keeping the substrate at a temperature below 190 deg.C during the growth process. Thereby a film of high quality is manufactured at a low temperature. The thin film having a dense structure and dielectricity can be used for passivating a surface which has no resistance to high temperature such as a surface of a polymer film. Moreover, the film which is manufactured with an oxygen source other than water, can be used for passivating a surface which is sensitive to water.

公开(公告)号：JP2002009078A

公开(公告)日：2002-01-11

申请号：JP2001144436

申请日：2001-05-15

Applicant: ASM MICROCHEMISTRY OY

Inventor： IBO RAAIEEMAAKAA ,  SOININEN PEKKA T ,  ERNST H A GURANNEMAN ,  HAUKKA SUVI P

IPC: H01L21/28 ,  C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To form a sealing layer before a high conformality ALD layer is formed on a porous layer in an integrated circuit. SOLUTION: A damascene metallization method comprises a step for making a trench in a desired interconnect pattern in a porous insulation layer formed on a semiconductor substrate.

公开(公告)号：JP2001323374A

公开(公告)日：2001-11-22

申请号：JP2001145256

申请日：2001-05-15

Applicant: ASM MICROCHEMISTRY OY

Inventor： KESALA JANNE

IPC: C23C16/448 ,  H01L21/00 ,  H01L21/205

Abstract: PROBLEM TO BE SOLVED: To provide a method and a device for feeding the vapor phase reactant from a source into a vapor phase reaction chamber. SOLUTION: In this method, a reactant as a liquid or a solid at an ambient temperature is vaporized at a vaporizing temperature from a reactant source, and the vaporized reactant is fed to a reaction chamber. The reactant source and the reaction chamber are arranged in individually exhaustible separate vessels. By this invention, new reaction chemical substance can be exchanged and changed without breaking a vacuum in the reaction chamber.