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    MINIATURE MICROWAVE PLASMA TORCH APPLICATION AND METHOD OF USE THEREOF
    1.
    发明申请
    MINIATURE MICROWAVE PLASMA TORCH APPLICATION AND METHOD OF USE THEREOF 审中-公开
    微型微波等离子体转鼓应用及其使用方法

    公开(公告)号：WO2005098083A2

    公开(公告)日：2005-10-20

    申请号：PCT/US2005/011733

    申请日：2005-04-06

    Applicant: MICHIGAN STATE UNIVERSITY ,  ASMUSSEN, Jes ,  GROTJOHN, Timothy ,  ZUO, Shengxi ,  HEMAWAN, Kadek, W.

    Inventor： ASMUSSEN, Jes ,  GROTJOHN, Timothy ,  ZUO, Shengxi ,  HEMAWAN, Kadek, W.

    IPC: C23C16/00

    CPC classification number: B23K26/0096 ,  B23K26/1429 ,  C23C4/134 ,  C23C8/36 ,  H05H1/30

    Abstract: A miniature microwave plasma torch apparatus (10) is described. The microwave plasma torch apparatus (10) is used for a variety of applications where rapid heating of a small amount of material is needed. The miniature microwave plasma torch apparatus (10) operates near or at atmospheric pressure for use in materials processing. The apparatus (10) provides a wide range of flow rates so that discharge properties vary from diffusional flow of radicals for gentle surface processing to high velocity, approaching supersonic, torch discharges for cutting and welding applications. The miniature microwave plasma torch apparatus (10) also has a very small materials processing spot size.

    Abstract translation: 描述了一种微型微波等离子体焰炬装置（10）。 微波等离子体焰炬装置（10）用于需要少量材料的快速加热的各种应用中。 小型微波等离子体焰炬装置（10）在大气压附近工作，用于材料加工。 设备（10）提供了宽范围的流量，使得放电性能随温和表面处理到高速度，接近超音速，焊接放电的切割和焊接应用的自由基的扩散流程而变化。 小型微波等离子体焰炬装置（10）也具有非常小的材料加工点尺寸。

    N-DOPED SINGLE CRYSTAL DIAMOND SUBSTRATES AND METHODS THEREFOR
    2.
    发明申请
    N-DOPED SINGLE CRYSTAL DIAMOND SUBSTRATES AND METHODS THEREFOR 审中-公开
    N-DOPED单晶金刚石基板及其方法

    公开(公告)号：WO2012030897A1

    公开(公告)日：2012-03-08

    申请号：PCT/US2011/049865

    申请日：2011-08-31

    Applicant: BOARD OF TRUSTEES MICHIGAN STATE UNIVERSITY ,  GROTJOHN, Timothy, A. ,  ASMUSSEN, Jes ,  HOGAN, Timothy

    Inventor： GROTJOHN, Timothy, A. ,  ASMUSSEN, Jes ,  HOGAN, Timothy

    IPC: H01L29/15

    CPC classification number: H01L29/0657 ,  H01L21/02376 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/3065 ,  H01L29/1602

    Abstract: The disclosure relates to the formation of n-doped single crystal diamond (SCD). In general, a SCD substrate is preferentially anisotropically etched to provide one or more recesses in the SCD substrate, where the recesses are defined by (1 1 1 ) surface sidewalls resulting from the preferential anisotropic etching process. The recesses generally have a pyramidal shape. N-type doped SCD (e.g., using a phosphorous dopant) is then deposited into the preferentially anisotropically etched recesses. When the SCD substrate is a p-type diamond (e.g., using a boron dopant), the resulting structure can be used as a p-n junction, for example for use in various power electronic apparatus such as diodes, etc.

    Abstract translation: 本公开涉及形成n掺杂单晶金刚石（SCD）。 通常，SCD衬底被优先各向异性蚀刻以在SCD衬底中提供一个或多个凹槽，其中凹陷由优先的各向异性蚀刻工艺产生的（111）表面侧壁限定。 凹槽通常具有金字塔形状。 然后将N型掺杂的SCD（例如，使用磷掺杂剂）沉积到优先各向异性蚀刻的凹槽中。 当SCD衬底是p型金刚石（例如，使用硼掺杂剂）时，所得到的结构可以用作p-n结，例如用于各种电力电子设备例如二极管等。

    IMPROVED MICROWAVE PLASMA REACTORS
    5.
    发明申请
    IMPROVED MICROWAVE PLASMA REACTORS 审中-公开
    改进的微波等离子体反应器

    公开(公告)号：WO2012158532A1

    公开(公告)日：2012-11-22

    申请号：PCT/US2012/037555

    申请日：2012-05-11

    Applicant: BOARD OF TRUSTEES MICHIGAN STATE UNIVERSITY ,  ASMUSSEN, Jes ,  GU, Yajun ,  GROTJOHN, Timothy, A.

    Inventor： ASMUSSEN, Jes ,  GU, Yajun ,  GROTJOHN, Timothy, A.

    IPC: C23C16/511

    CPC classification number: C23C16/517 ,  C23C16/511 ,  C30B25/105 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32256 ,  H01J37/32807 ,  H01J2237/32

    Abstract: Microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed reactors operate at high pressures (>180-320 Torr) and high power densities (> 150W/cm3), and thereby enable high deposition rate CVD processes that rapidly deposit materials. In particular, reactor design examples are described that, when operating in the 180-320 Torr pressure regime, rapidly CVD synthesize high quality polycrystalline (PCD) and single crystal diamond (SCD). The improved reactors include a radial contraction in the vicinity of the plasma chamber (and optionally a combined expansion in the vicinity of the electromagnetic wave source, followed by the contraction) in the main microwave chamber as electromagnetic energy propagates from an electromagnetic wave source to a plasma/deposition chamber.

    Abstract translation: 公开了微波等离子体辅助反应器，例如化学气相沉积（MPCVD）反应器。 所公开的反应器在高压（> 180-320托）和高功率密度（> 150W / cm 3）下工作，从而实现快速沉积材料的高沉积速率CVD工艺。 特别地，描述了反应器设计实例，当在180-320乇压力范围内操作时，快速CVD合成高质量多晶（PCD）和单晶金刚石（SCD）。 改进的反应器包括在主微波室中等离子体室附近的径向收缩（以及可选地在电磁波源附近的组合膨胀，随后是收缩），因为电磁能量从电磁波源传播到 等离子体/沉积室。

    MINIATURE MICROWAVE PLASMA TORCH APPLICATION AND METHOD OF USE THEREOF
    7.
    发明申请
    MINIATURE MICROWAVE PLASMA TORCH APPLICATION AND METHOD OF USE THEREOF 审中-公开
    微型微波等离子体转鼓应用及其使用方法

    公开(公告)号：WO2005098083A3

    公开(公告)日：2006-11-09

    申请号：PCT/US2005011733

    申请日：2005-04-06

    Applicant: UNIV MICHIGAN STATE ,  ASMUSSEN JES ,  GROTJOHN TIMOTHY ,  ZUO SHENGXI ,  HEMAWAN KADEK W

    Inventor： ASMUSSEN JES ,  GROTJOHN TIMOTHY ,  ZUO SHENGXI ,  HEMAWAN KADEK W

    IPC: C23C16/00 ,  B23K26/00 ,  B23K26/14 ,  C23C4/12 ,  C23C8/36 ,  C23F1/00 ,  H01L21/306 ,  H05H1/30

    CPC classification number: B23K26/0096 ,  B23K26/1429 ,  C23C4/134 ,  C23C8/36 ,  H05H1/30

    Abstract: A miniature microwave plasma torch apparatus (10) is described. The microwave plasma torch apparatus (10) is used for a variety of applications where rapid heating of a small amount of material is needed. The miniature microwave plasma torch apparatus (10) operates near or at atmospheric pressure for use in materials processing. The apparatus (10) provides a wide range of flow rates so that discharge properties vary from diffusional flow of radicals for gentle surface processing to high velocity, approaching supersonic, torch discharges for cutting and welding applications. The miniature microwave plasma torch apparatus (10) also has a very small materials processing spot size.

    Abstract translation: 描述了一种微型微波等离子体焰炬装置（10）。 微波等离子体焰炬装置（10）用于需要少量材料的快速加热的各种应用中。 小型微波等离子体焰炬装置（10）在大气压附近工作，用于材料加工。 设备（10）提供了宽范围的流量，使得放电性能随温和表面处理到高速度，接近超音速，焊接放电的切割和焊接应用的自由基的扩散流程而变化。 小型微波等离子体焰炬装置（10）也具有非常小的材料加工点尺寸。

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