公开(公告)号：JP2011040718A

公开(公告)日：2011-02-24

申请号：JP2010127956

申请日：2010-06-03

Applicant: Advanced Ion Beam Technology Inc ,  アドバンスト イオン ビーム テクノロジー インクAdvanced Ion Beam Technology Inc.

Inventor： SHEN CHENG-HUI ,  BERRIAN DON

IPC: H01L21/265 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/31701

Abstract: PROBLEM TO BE SOLVED: To provide a method and apparatus for uniformly implanting ions into a wafer by changing a relative motion and a geometrical relationship between the wafer and an ion beam. SOLUTION: First of all, a belt-like ion beam having a length of a first axis and a width of a second axis is formed on a wafer. The length of the ion beam is longer than the diameter of the wafer and the width is narrower than the diameter of the wafer. The center of the wafer is moved at a certain moving speed along the scanning route which the ion beam passes over, and at the same time, the wafer is rotated at a certain rotational speed. While the wafer is moved while being rotated, when the wafer passes over the ion beam, the wafer is completely covered by the ion beam along the first axis and the maximum rotational speed is several times of the moving speed. The moving speed and the rotational speed are constants or are functions of the location of the wafer with respect to the ion beam. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供通过改变晶片和离子束之间的相对运动和几何关系将离子均匀地注入晶片的方法和装置。 解决方案：首先，在晶片上形成长度为第一轴和第二轴的宽度的带状离子束。 离子束的长度比晶片的直径长，并且宽度比晶片的直径窄。 晶片的中心沿着离子束通过的扫描路径以一定的移动速度移动，同时晶片以一定的转速旋转。 当晶片在旋转时移动，当晶片通过离子束时，晶片沿着第一轴线被离子束完全覆盖，最大转速是移动速度的几倍。 移动速度和转速是常数或晶片相对于离子束的位置的函数。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2007059395A

公开(公告)日：2007-03-08

申请号：JP2006223334

申请日：2006-08-18

Applicant: Advanced Ion Beam Technology Inc ,  アドバンスト イオン ビーム テクノロジー インクAdvanced Ion Beam Technology Inc.

Inventor： CHEN JIONG ,  WHITE NICHOLAS R

IPC: H01J37/317 ,  C23C14/48 ,  H01J37/14 ,  H01J49/30

Abstract: PROBLEM TO BE SOLVED: To provide a new system structure for high-current ion beam generation improved in the uniformity of ion beams without requiring additional structuring elements, even if manufacturing cost is reduced and manufacturing processes are simplified. SOLUTION: This ion implanting device is provided with multiple operating modes. The device has an ion source and an extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implanting device includes a magnetic analyzer for selecting ions with specific mass-to-charge ratios to pass through a mass slit to be projected to a substrate. A multipole lens is provided to control beam uniformity and collimation. This ion implating method is provided with a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The method can change over ion implantation modes from the one-dimensional scanning to two-dimensional scanning of a target, and from a a simple path to an S-shaped path with deceleration. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：即使制造成本降低并且简化了制造工艺，为了提供离子束的均匀性而不需要额外的结构元件的高电流离子束产生的新系统结构。

解决方案：该离子注入装置具有多种工作模式。 该装置具有离子源和用于从其提取带状离子束的提取装置。 离子注入装置包括用于选择具有特定质荷比的离子的磁分析器，以通过质量狭缝以投射到基底。 提供多极镜头以控制光束均匀性和准直。 该离子注入方法具有双路束线，其中第二路径包含并入能量过滤的减速系统。 该方法可以将离子注入模式从目标的一维扫描到二维扫描，以及从简单的路径到具有减速的S形路径。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2014132568A

公开(公告)日：2014-07-17

申请号：JP2013250497

申请日：2013-12-03

Applicant: Advanced Ion Beam Technology Inc ,  アドバンスド イオン ビーム テクノロジー,インコーポレイテッドAdvanced Ion Beam Technology,Inc.

Inventor： WAN ZHIMIN

IPC: H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J2237/047 ,  H01J2237/30472 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/66803

Abstract: PROBLEM TO BE SOLVED: To decrease the set-up time of an ion beam, in high-energy ion injection processing having an ion source, an extraction assembly, and an electrode assembly.SOLUTION: An ion beam 106 having first energy may be generated by using an ion source and an extraction assembly. First voltage may be applied between electrode assemblies 112. The ion beam may enter the electrode assemblies with the first energy, go out from the electrode assemblies with second energy, and inject the ion in a target with the second energy. Second voltage may be applied between the electrode assemblies. The ion beam may enter the electrode assemblies with the first energy, go out from the electrode assemblies with third energy, and inject an ion in a target with the third energy. The third energy may differ from the second energy.

Abstract translation: 要解决的问题：在具有离子源，提取组件和电极组件的高能离子注入处理中，减小离子束的设置时间。解决方案：可以产生具有第一能量的离子束106 通过使用离子源和萃取组件。 可以在电极组件112之间施加第一电压。离子束可以以第一能量进入电极组件，用第二能量从电极组件出来，并将离子注入具有第二能量的靶中。 可以在电极组件之间施加第二电压。 离子束可以以第一能量进入电极组件，用第三能量从电极组件出来，并且用具有第三能量的靶中注入离子。 第三种能量可能与第二种能量不同。

公开(公告)号：JP2013030776A

公开(公告)日：2013-02-07

申请号：JP2012167379

申请日：2012-07-27

Applicant: Advanced Ion Beam Technology Inc ,  アドバンスド イオン ビーム テクノロジー,インコーポレイテッドAdvanced Ion Beam Technology,Inc.

Inventor： DANIEL TANG ,  TZUSHIH YEN

IPC: H01L21/336 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L29/66795 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/30604 ,  H01L21/31053 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/517 ,  H01L29/66803 ,  H01L29/7848 ,  H01L29/785

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a high-concentration source drain that can be highly integrated in a fin FET.SOLUTION: A fin is formed having a source region, a drain region, and a channel region between the source and drain regions. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched and removed while leaving the channel region. A source epitaxy region and a drain epitaxy region are formed on both sides of the channel region that are adjacent to the source and drain regions. The source and drain epitaxy regions are doped in-situ while growing an epitaxial semiconductor.

Abstract translation: 要解决的问题：提供一种形成可以高度集成在鳍式FET中的高浓度源极漏极的方法。 解决方案：在源极区和漏极区之间形成有源极区，漏极区和沟道区的鳍。 形成具有与沟道区域直接接触的绝缘层和与绝缘层直接接触的导电栅极材料的栅极堆叠。 蚀刻并除去源区和漏区，同时留下沟道区。 源极外延区域和漏极外延区域形成在与源极区域和漏极区域相邻的沟道区域的两侧。 源极和漏极外延区域在生长外延半导体的同时原位掺杂。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2014042030A

公开(公告)日：2014-03-06

申请号：JP2013172594

申请日：2013-08-22

Applicant: Advanced Ion Beam Technology Inc ,  アドバンスド イオン ビーム テクノロジー,インコーポレイテッドAdvanced Ion Beam Technology,Inc.

Inventor： DANIEL TANG ,  YEN TZU-SHIH

IPC: H01L21/265 ,  H01L21/336 ,  H01L29/78

CPC classification number: H01L29/66803 ,  H01L21/26586 ,  H01L21/823431 ,  H01L29/785

Abstract: PROBLEM TO BE SOLVED: To dope a non-planar semiconductor device such as FinFET.SOLUTION: In doping a non-planar semiconductor device, a substrate having a non-planar semiconductor body formed thereon is obtained. A first ion implant is performed in a region of the non-planar semiconductor body. The first ion implant has a first implant energy and a first implant angle. A second ion implant is performed in the same region of the non-planar semiconductor body. The second ion implant has a second implant energy and a second implant angle. The first implant energy may be different from the second implant energy. Additionally, the first implant angle may be different from the second implant angle.

Abstract translation: 要解决的问题：掺杂诸如FinFET的非平面半导体器件。解决方案：在掺杂非平面半导体器件中，获得其上形成有非平面半导体体的衬底。 在非平面半导体本体的区域中执行第一离子注入。 第一离子注入具有第一注入能量和第一注入角度。 在非平面半导体本体的相同区域中执行第二离子注入。 第二离子注入具有第二注入能量和第二注入角度。 第一注入能量可以不同于第二注入能量。 另外，第一植入角度可以不同于第二植入角度。

公开(公告)号：JP2007059394A

公开(公告)日：2007-03-08

申请号：JP2006222064

申请日：2006-08-16

Applicant: Advanced Ion Beam Technology Inc ,  アドバンスト イオン ビーム テクノロジー インクAdvanced Ion Beam Technology Inc.

Inventor： CHEN JIONG ,  WHITE NICHOLAS R

IPC: H01J37/317 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To provide a new system structure for high-current ion beam generation improved in the uniformity of ion beams without requiring additional structuring elements, even if manufacturing cost is reduced and manufacturing processes are simplified.
SOLUTION: This ion implanting device is provided with multiple operating modes. The device has an ion source and an extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implanting device includes a magnetic analyzer for selecting ions with specific mass-to-charge ratios to pass through a mass slit to be projected to a substrate. A multipole lens is provided to control beam uniformity and collimation. This ion implating method is provided with a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The method can change over ion implantation modes from the one-dimensional scanning to two-dimensional scanning of a target, and from a a simple path to an S-shaped path with deceleration.
COPYRIGHT: (C)2007,JPO&INPIT

公开(公告)号：JP2014090166A

公开(公告)日：2014-05-15

申请号：JP2013212093

申请日：2013-10-09

Applicant: Advanced Ion Beam Technology Inc ,  アドバンスド イオン ビーム テクノロジー,インコーポレイテッドAdvanced Ion Beam Technology,Inc.

Inventor： YEN TZU-SHIH ,  DANIEL TANG ,  CHENG TSUNGNAN

IPC: H01L21/22 ,  H01L21/265 ,  H01L21/336 ,  H01L29/78

CPC classification number: H01L21/2236 ,  H01L29/66803 ,  H01L29/785

Abstract: PROBLEM TO BE SOLVED: To provide a method of performing plasma doping to a nonplanar semiconductor device.SOLUTION: When plasma doping a nonplanar semiconductor device, a substrate 104 in which a nonplanar semiconductor body is formed is obtained. The substrate having a nonplanar semiconductor body is arranged in a chamber 102. Plasma 120 is formed in the chamber, and contains dopant ions. In order to inject dopant ions into the region of a nonplanar semiconductor body, a first bias voltage is generated. In order to inject dopant ions into the same region, a second bias voltage is formed. In some example, the first bias voltage is different from the second bias voltage.

Abstract translation: 要解决的问题：提供对非平面半导体器件进行等离子体掺杂的方法。解决方案：当等离子体掺杂非平面半导体器件时，获得其中形成非平面半导体主体的衬底104。 具有非平面半导体本体的衬底被布置在室102中。等离子体120形成在室中，并且含有掺杂离子。 为了将掺杂离子注入非平面半导体体的区域，产生第一偏置电压。 为了将掺杂离子注入同一区域，形成第二偏压。 在一些示例中，第一偏置电压与第二偏置电压不同。

公开(公告)号：JP2013058740A

公开(公告)日：2013-03-28

申请号：JP2012167359

申请日：2012-07-27

Applicant: Advanced Ion Beam Technology Inc ,  アドバンスド イオン ビーム テクノロジー,インコーポレイテッドAdvanced Ion Beam Technology,Inc.

Inventor： DANIEL TANG ,  YEN TZU-SHIH

IPC: H01L21/336 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L29/66803 ,  H01L21/02636 ,  H01L29/0673 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/78684

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a finFET by which a manufacturing cost can be reduced and a processing time period can be shortened.SOLUTION: A finFET is formed to have a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed to have an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched for exposing a first region of the fin. Then, a part of the first region is doped by a dopant.

Abstract translation: 解决的问题：提供一种制造可以降低制造成本并缩短处理时间的finFET的方法。 解决方案：finFET形成为具有在源极区和漏极区之间具有源极区，漏极区和沟道区的鳍。 翅片在半导体晶片上蚀刻。 形成栅叠层以具有与沟道区直接接触的绝缘层和与绝缘层直接接触的导电栅极材料。 蚀刻源极和漏极区域以暴露鳍片的第一区域。 然后，第一区域的一部分被掺杂剂掺杂。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2006313750A

公开(公告)日：2006-11-16

申请号：JP2006128484

申请日：2006-05-02

Applicant: Advanced Ion Beam Technology Inc ,  アドバンスト イオン ビーム テクノロジー インクAdvanced Ion Beam Technology Inc.

Inventor： WHITE NICHOLAS R ,  CHEN JIONG

IPC: H01J37/05 ,  H01J37/317

Abstract: PROBLEM TO BE SOLVED: To provide a high resolution magnetic analyzer for an ion implantation device capable of bending ribbon ion beams with a high aspect ratio with an angle between about 45 degrees or larger and about 110 degrees or lower, capable of setting a focus through an analyzing slit for mass analysis. SOLUTION: The high resolution magnetic analyzer has an arch-shaped yoke 110 and an array formed by positioning loop-shaped coils 120, 121 in mirror plane symmetry. Respective loop-shaped coils are extended at an inlet and an outlet of the arch-shaped yoke, and formed into a curved shape known as a side coil at respective rounded end parts. By the above structure, magnetic field leakage is reduced, and a convergence with high quality is realized because a uniform magnetic field is generated in the magnetic field area, and consequently, high resolution, high aspect ratio, and light weight are realized. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决的问题：提供一种用于离子注入装置的高分辨率磁分析器，其能够以约45度以上至约110度以下的角度弯曲具有高纵横比的带状离子束，能够设定 通过分析狭缝进行质量分析的重点。 解决方案：高分辨率磁分析仪具有拱形磁轭110和通过将圆形线圈120,121定位成镜面对称形成的阵列。 各个环形线圈在拱形磁轭的入口和出口处延伸，并在相应的圆形端部处形成为称为侧线圈的弯曲形状。 通过上述结构，磁场泄漏减少，并且由于在磁场区域中产生均匀的磁场而实现了高品质的会聚，从而实现了高分辨率，高纵横比和轻量化。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006278316A

公开(公告)日：2006-10-12

申请号：JP2006025000

申请日：2006-02-01

Applicant: Advanced Ion Beam Technology Inc ,  アドバンスト イオン ビーム テクノロジー インクAdvanced Ion Beam Technology Inc.

Inventor： KAIM ROBERT E ,  WHITE NICHOLAS R

IPC: H01J37/317 ,  C23C14/48 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To provide a hybrid scan type ion implantation device processing a single wafer, capable of uniformly injecting and having a simple structure, excellent durability and reliability.
SOLUTION: A wafer is mounted on a wafer holder 120 attached to an end of an arm 110 connected with a first pivot 150 and bent midway by a second pivot 140. The wafer is tilted by an arbitrary angle with the second pivot and mechanically scanned in a circular arc shape by the first pivot. A ribbon beam 20 whose current density is proportional to the distance from the first pivot is formed with a collimator to irradiate the wafer to achieve uniform injection.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供能够均匀注入并具有简单结构，优异的耐久性和可靠性的单晶片的混合扫描型离子注入装置。 解决方案：将晶片安装在安装在与第一枢轴150连接的臂110的端部并由第二枢轴140中途弯曲的晶片保持器120上。晶片与第二枢轴倾斜任意角度，并且 通过第一枢轴机械扫描成圆弧形。 电流密度与第一枢轴的距离成比例的带状光束20由准直器形成以照射晶片以实现均匀的注入。 版权所有（C）2007，JPO＆INPIT