公开(公告)号：WO2007045658A1

公开(公告)日：2007-04-26

申请号：PCT/EP2006/067509

申请日：2006-10-17

Applicant: STMICROELECTRONICS CROLLES 2 SAS ,  STMICROELECTRONICS SA ,  NXP B.V. ,  MÜLLER, Markus ,  MONDOT, Alexandre ,  BESSON, Pascal

Inventor： MÜLLER, Markus ,  MONDOT, Alexandre ,  BESSON, Pascal

IPC: H01L21/8238 ,  H01L21/311

CPC classification number: H01L21/31111 ,  H01L21/823814 ,  H01L21/823835 ,  H01L29/66545

Abstract: The invention concerns a method of fabricating a device, comprising the steps of forming a first silicon oxide layer within a first region of said device and a second silicon oxide layer within a second region of said device, implanting doping ions of a first type into said first region, implanting doping ions of a second type into said second region, and etching said first and second regions for a determined duration such that said first silicon oxide layer is removed and at least a part of said second silicon oxide layer remains.

Abstract translation: 本发明涉及一种制造器件的方法，包括以下步骤：在所述器件的第一区域内形成第一氧化硅层，在所述器件的第二区域内形成第二氧化硅层，将第一类型的掺杂离子注入到所述 第一区域，将第二类型的掺杂离子注入到所述第二区域中，并且蚀刻所述第一和第二区域一段确定的持续时间，以使得所述第一氧化硅层被去除并且所述第二氧化硅层的至少一部分保留。