Abstract:
Self-alignment process usable in microelectronics to obtain alignment of at least one group of holes, one of said holes (or large diameter hole) being formed in an upper level and the other hole (or small diameter hole) being formed in a lower level of a stacked structure. The process consists of:providing a conducting layer in the structure, said conducting layer possibly being connected to an external electrical circuit,disposing an insulating layer on said conducting layer,piercing the insulating layer with a hole of said small diameter that penetrates as far as the conducting layer,carrying out an electrolytic deposit of a conducting material in the small diameter hole using the conducting layer as the electrode during the electrolysis procedure, said electrolytic deposit filling the small diameter hole from the conducting layer and causing the deposit to overflow onto said insulating layer to give the electrolytically deposited conducting material the shape of a mushroom whose head rests on said insulating layer, the electrolytic deposition being continued until the diameter of the mushroom head attains the size of the large diameter,depositing on the structure thereby obtained a layer of a different type of material from the electrolytically deposited conducting material,removing the mushroom, thereby leaving a large diameter hole aligned with a small diameter hole in the last layer deposited.
Abstract:
An electron collector having an anode constituted by a substrate (21, 40, 41) on which are deposited conductive strips or tracks (23, 43). A dielectric material layer is deposited on at least one of the edges of each conductive strip.
Abstract:
This invention relates to a triode type cathode structure comprising, in superposition, an electrode forming a cathode (13) and supporting means made of an electron emitting material in the form of a layer (14), an electrical insulation layer (11) and a grid electrode (15), an opening (12) formed in the grid electrode and in the electrical insulation layer exposing the means made of an electron emitting material. The means made of an electron emitting material (14) are located in the central part of the opening of the grid electrode (15), this opening being in the form of a slit and the means made of an electron emitting material exposed by the slit being composed of elements aligned along the longitudinal axis of the slit.
Abstract:
A triode type cathode structure including a cathode assembly composed of a cathode electrode at least one electron emitter and a resistive layer inserted between the cathode electrode and the at least one electron emitter to connect them together electrically. The triode cathode structure also includes a grid electrode separated from the cathode assembly by a layer of electrical insulation. The cathode electrode is arranged in a first plane and the at least one electron emitter is arranged in a second plane parallel to the first plane and the cathode electrode and each electron emitter are separated by a same distance measured in a third plane parallel to the first and second planes.
Abstract:
A device produces an electric field between two electrodes, the electric field having a specified value in the vicinity of a first of the two electrodes. The device includes a means for applying a potential difference between the two electrodes, means forming modulation electrode located near to the first electrode in the vicinity of which the electric field must have specified value. The device also includes control means for applying a potential difference between the means forming modulation electrode and the first electrode located nearby in order to obtain, through the contribution of the potential differences, the specified value of electric field.
Abstract:
A method for manufacturing a triode type cathode structure including depositing and etching: a cathode layer as cathode conductors; a grid layer as grid conductors; an electrical insulation layer and the grid conductors until reaching a resistive layer to provide cavities; and the cathode conductors to have a perforated structure at the intersection of the cathode conductors and grid conductors. Etching the grid conductors and the electrical insulation layer includes: a) depositing a resin layer on the grid layer, b) lithography and development of the resin layer according to a pattern that will form emissive pads, c) etching the grid layer according to the pattern, d) etching the insulation layer subjacent to the grid layer by extending the etching beyond emissive pad patterns, e) etching the grid layer at zones exposed by etching the insulation layer until reaching the resin layer, f) depositing a catalyst layer in openings of the resin layer to form emissive pads at the bottom of the cavities, and g) eliminating the resin layer.
Abstract:
A method and a device for the formation of holes in a layer of photosensitive material, in particular for the manufacture of electron sources.This method is characterized in that a membrane (121) with micro-perforations (122) is laid onto the layer of photosensitive material (120); the layer of photosensitive material is insolated through the membrane (121) in order to print areas (125) corresponding to the micro-perforations (122); the membrane (121) is separated from the layer of photosensitive material (120) thus insolated and the photosensitive layer (120) is then developed in order to form holes in it corresponding to the insolated areas (125).
Abstract:
A method for manufacturing a triode type cathode structure including depositing and etching: a cathode layer as cathode conductors; a grid layer as grid conductors; an electrical insulation layer and the grid conductors until reaching a resistive layer to provide cavities; and the cathode conductors to have a perforated structure at the intersection of the cathode conductors and grid conductors. Etching the grid conductors and the electrical insulation layer includes: a) depositing a resin layer on the grid layer, b) lithography and development of the resin layer according to a pattern that will form emissive pads, c) etching the grid layer according to the pattern, d) etching the insulation layer subjacent to the grid layer by extending the etching beyond emissive pad patterns, e) etching the grid layer at zones exposed by etching the insulation layer until reaching the resin layer, f) depositing a catalyst layer in openings of the resin layer to form emissive pads at the bottom of the cavities, and g) eliminating the resin layer.
Abstract:
A microtip electron source including at least one electron emission zone composed of a plurality of microtips connected electrically to a cathode conductor. At least one gate electrode is positioned opposite the electron emission zone and pierced with apertures located opposite the microtips, to extract the electrons from the microtips. An emitted electron focusing gate is positioned opposite the gate electrode, and includes an aperture unit including at least one slit located opposite at least two successive microtips. A flat display screen can include such a microtip electron source. Further, a manufacturing process of such an electron source is disclosed.
Abstract:
A display screen which includes a microtip electron source which is observerable through the microtip support. The screen includes a cathodoluminescent anode, transparent support and cathode conductors formed on the support. The conductors are meshed according to a first pattern which includes openings. A resistive layer formed on the support is meshed according to a second pattern and includes solid areas located in the openings of the first pattern. Microtips are formed on the solid areas. Grids are meshed according to the second pattern in an unmeshed insulating layer which is transparent and extends above the cathode conductors and the resistive layer in between them and the grids.