公开(公告)号：WO2003041123A3

公开(公告)日：2003-05-15

申请号：PCT/IL2002/000882

申请日：2002-11-06

Applicant: C.I. SYSTEMS LTD. ,  CABIB, Dario ,  BUCKWALD, Robert, A.

Inventor： CABIB, Dario ,  BUCKWALD, Robert, A.

IPC: H01L21/66

Abstract: A method for processing a workpiece and an associated processing chamber (fig. 10) and analytic instrument. A layer of a material such as a low-K dielectric is applied to a workpiece such as a semiconductor wafer. During the application, and/or before or during subsequent processing, a property of the layer is measured by steps including exciting a portion of the layer with incident light and monitoring light such as Raman scattered light that is emitted from that portion of the layer in response to the incident light, via a probehead (fig. 20) that may be inside or outside the chamber housing. The analytic instrument includes the probehead and two sources of excitation light at two different wavelengths.

公开(公告)号：WO1996004534A1

公开(公告)日：1996-02-15

申请号：PCT/US1995008521

申请日：1995-07-12

Applicant: C.I. SYSTEMS LTD. ,  CABIB, Dario ,  BUCKWALD, Robert, A. ,  ADEL, Michael, E.

Inventor： C.I. SYSTEMS LTD.

IPC: G01J05/06

CPC classification number: G01J5/0003

Abstract: An emissivity compensating non-contact system for measuring the temperature of a semiconductor wafer (24). The system includes a semiconductor wafer emissivity compensation station (10) for measuring the reflectivity of the wafer (24) at discrete wavelengths to yield wafer emissivity in specific wavelength bands. The system further includes a measurement probe (13) which is optically coupled to a semiconductor process chamber (12). The probe (13) senses wafer self-emission using one or more optical detectors (40) and a light modulator (42). A background temperature determining mechanism (44) independently senses the temperature of a source (46) of background radiation. Finally, a mechanism (16) calculates the temperature of the semiconductor wafer based on reflectivity and self-emission of the wafer and background temperature.

Abstract translation: 一种用于测量半导体晶片（24）的温度的发射率补偿非接触系统。 该系统包括半导体晶片发射率补偿站（10），用于以离散波长测量晶片（24）的反射率，以产生特定波长带中的晶片辐射率。 该系统还包括光学耦合到半导体处理室（12）的测量探头（13）。 探头（13）使用一个或多个光学检测器（40）和光调制器（42）感测晶片自发射。 背景温度确定机构（44）独立地感测背景辐射源（46）的温度。 最后，机构（16）基于晶片的反射率和自发射以及背景温度来计算半导体晶片的温度。

公开(公告)号：WO2003041123A2

公开(公告)日：2003-05-15

申请号：PCT/IL2002/000882

申请日：2002-11-06

Applicant: C.I. SYSTEMS LTD. ,  CABIB, Dario ,  BUCKWALD, Robert, A.

Inventor： CABIB, Dario ,  BUCKWALD, Robert, A.

IPC: H01L

CPC classification number: G01J3/44 ,  G01N21/211 ,  G01N21/64 ,  G01N21/65 ,  G01N21/9501 ,  G01N2021/656 ,  G01N2021/8427

Abstract: A method for processing a workpiece and an associated processing chamber and analytic instrument. A layer of a material such as a low-K dielectric is applied to a workpiece such as a semiconductor wafer. During the application, and/or before or during subsequent processing, a property of the layer is measured by steps including exciting a portion of the layer with incident light and monitoring light such as Raman scattered light that is emitted from that portion of the layer in response to the incident light, via a probehead that may be inside or outside the chamber housing. The analytic instrument includes the probehead and two sources of excitation light at two different wavelengths.

Abstract translation: 一种用于处理工件和相关处理室和分析仪器的方法。 将诸如低K电介质的材料层施加到诸如半导体晶片的工件上。 在施加期间和/或在后续处理期间和/或在后续处理期间和/或之后或之后，层的性质通过以下步骤测量：包括用入射光激发该层的一部分，并监测从该层的该部分发射的拉曼散射光 通过可能在室外或室外的探头来响应入射光。 分析仪器包括两个不同波长的探头和两个激发光源。