-
1.发明授权Gap fill materials and bottom anti-reflective coatings comprising hyperbranched polymers 有权间隙填充材料和包含超支化聚合物的底部抗反射涂层公开(公告)号：US07745540B2
公开(公告)日：2010-06-29
申请号：US11852137
申请日：2007-09-07
Applicant: Chelladurai Devadoss , Mandar Bhave , Runhui Huang
Inventor： Chelladurai Devadoss , Mandar Bhave , Runhui Huang
CPC classification number: C09D5/34 , C09D201/005 , Y10T428/2462
Abstract: New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a dendritic polymer dispersed or dissolved in a solvent system, and preferably a light attenuating compound, a crosslinking agent, and a catalyst. The inventive compositions can be used to protect contact or via holes from degradation during subsequent etching in the dual damascene process. The inventive compositions can also be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.
Abstract translation: 提供了具有改善的流动性能的新的抗反射或填充组合物。 组合物包含分散或溶解在溶剂体系中的树枝状聚合物，优选光衰减化合物，交联剂和催化剂。 本发明的组合物可用于在双镶嵌工艺中的后续蚀刻期间保护接触或通孔免于降解。 本发明的组合物还可以施加到基底（例如，硅晶片）以形成具有高蚀刻速率的抗反射涂层，其在随后的光致抗蚀剂曝光和显影期间最小化或防止反射。
-
2.发明申请GAP FILL MATERIALS AND BOTTOM ANTI-REFLECTIVE COATINGS COMPRISING HYPERBRANCHED POLYMERS 有权包覆高分子聚合物的气隙填充材料和底部防反射涂层公开(公告)号：US20080213544A1
公开(公告)日：2008-09-04
申请号：US11852137
申请日：2007-09-07
Applicant: Chelladurai Devadoss , Mandar Bhave , Runhui Huang
Inventor： Chelladurai Devadoss , Mandar Bhave , Runhui Huang
CPC classification number: C09D5/34 , C09D201/005 , Y10T428/2462
Abstract: New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a dendritic polymer dispersed or dissolved in a solvent system, and preferably a light attenuating compound, a crosslinking agent, and a catalyst. The inventive compositions can be used to protect contact or via holes from degradation during subsequent etching in the dual damascene process. The inventive compositions can also be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.
Abstract translation: 提供了具有改善的流动性能的新的抗反射或填充组合物。 组合物包含分散或溶解在溶剂体系中的树枝状聚合物，优选光衰减化合物，交联剂和催化剂。 本发明的组合物可用于在双镶嵌工艺中的后续蚀刻期间保护接触或通孔免于降解。 本发明的组合物还可以施加到基底（例如，硅晶片）以形成具有高蚀刻速率的抗反射涂层，其在随后的光致抗蚀剂曝光和显影期间最小化或防止反射。
-
公开(公告)号：US07754818B2
公开(公告)日：2010-07-13
申请号：US11032930
申请日：2005-01-11
Applicant: Chelladurai Devadoss , Mandar Bhave , Runhui Huang
Inventor： Chelladurai Devadoss , Mandar Bhave , Runhui Huang
CPC classification number: C09D5/34 , C09D201/005 , Y10T428/2462
Abstract: New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a dendritic polymer dispersed or dissolved in a solvent system, and preferably a light attenuating compound, a crosslinking agent, and a catalyst. The inventive compositions can be used to protect contact or via holes from degradation during subsequent etching in the dual damascene process. The inventive compositions can also be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.
-
-
Search Results
3
records
(took 0.03 seconds)
