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    METHOD AND APPARATUS FOR CHEMICAL DELIVERY THROUGH THE BRUSH
    1.
    发明申请
    METHOD AND APPARATUS FOR CHEMICAL DELIVERY THROUGH THE BRUSH 审中-公开
    通过BRUSH进行化学交付的方法和装置

    公开(公告)号：WO1997013590A1

    公开(公告)日：1997-04-17

    申请号：PCT/US1996016330

    申请日：1996-10-11

    Applicant: ONTRAK SYSTEMS, INC. ,  DELARIOS, John, M. ,  RAVKIN, Mikhail ,  GARDNER, Douglas, G.

    Inventor： ONTRAK SYSTEMS, INC.

    IPC: B08B01/00

    CPC classification number: H01L21/02052 ,  A46B11/06 ,  B08B1/007 ,  B08B1/04 ,  B08B3/08 ,  H01L21/31111 ,  H01L21/67046 ,  Y10S134/902

    Abstract: A method and apparatus for chemical delivery through the brush (240) used in semiconductor substrate cleaning processes. The chemical solutions (210, 220) are delivered to the core (230) of a brush (240) where the solution is absorbed by the brush (240) and then applied by the brush (240) onto the substrate. This delivery system applies the chemical solutions (210, 220) uniformly to the semiconductor substrate, reduces the volumes of chemical solutions (210, 220) used in a scrubbing process, and helps maintain control of the pH profile of a subtrate. This system is described and illustrated in the manner it is used in conjunction with a scrubber that scrubs both sides of a semiconductor substrate.

    Abstract translation: 一种通过用于半导体衬底清洗工艺中的刷子（240）进行化学传递的方法和装置。 化学溶液（210,220）被输送到刷子（240）的芯部（230），其中溶液被刷子（240）吸收，然后通过刷子（240）施加到基底上。 该递送系统将化学溶液（210,220）均匀地施加到半导体衬底，减少了在洗涤过程中使用的化学溶液（210,220）的体积，并且有助于保持对缓冲液的pH曲线的控制。 该系统以与擦洗半导体衬底的两侧的洗涤器结合使用的方式进行描述和说明。

    METHOD OF DIELECTRIC FILM TREATMENT
    2.
    发明申请
    METHOD OF DIELECTRIC FILM TREATMENT 审中-公开
    电介质膜处理方法

    公开(公告)号：WO2009151656A2

    公开(公告)日：2009-12-17

    申请号：PCT/US2009/035030

    申请日：2009-02-24

    Applicant: LAM RESEARCH CORPORATION ,  YUN, Seokmin ,  ZHU, Ji ,  DELARIOS, John, M. ,  WILCOXSON, Mark

    Inventor： YUN, Seokmin ,  ZHU, Ji ,  DELARIOS, John, M. ,  WILCOXSON, Mark

    CPC classification number: H01L21/67051 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31138

    Abstract: A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.

    Abstract translation: 用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。 工艺参数定义与衬底表面相关的特性，例如待清洁的衬底表面的特性，待除去的污染物，在衬底上形成的特征以及在制造操作中使用的化学品。 基于工艺参数识别多个应用化学物质。 多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。 包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程， 通过其形成特征的低k电介质材料。

    METHOD OF DIELECTRIC FILM TREATMENT
    4.
    发明申请
    METHOD OF DIELECTRIC FILM TREATMENT 审中-公开
    电介质膜处理方法

    公开(公告)号：WO2009151656A3

    公开(公告)日：2010-03-04

    申请号：PCT/US2009035030

    申请日：2009-02-24

    Applicant: LAM RES CORP ,  YUN SEOKMIN ,  ZHU JI ,  DELARIOS JOHN M ,  WILCOXSON MARK

    Inventor： YUN SEOKMIN ,  ZHU JI ,  DELARIOS JOHN M ,  WILCOXSON MARK

    IPC: H01L21/302 ,  H01L21/31

    CPC classification number: H01L21/67051 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31138

    Abstract: A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.

    Abstract translation: 用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。 工艺参数定义与衬底表面相关的特性，例如待清洁的衬底表面的特性，待除去的污染物，在衬底上形成的特征以及在制造操作中使用的化学品。 基于工艺参数识别多个应用化学物质。 多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。 包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程， 通过其形成特征的低k电介质材料。

    SINGLE PHASE PROXIMITY HEAD HAVING A CONTROLLED MENISCUS FOR TREATING A SUBSTRATE
    5.
    发明申请
    SINGLE PHASE PROXIMITY HEAD HAVING A CONTROLLED MENISCUS FOR TREATING A SUBSTRATE 审中-公开
    具有用于处理基板的控制菜单的单相位近端头

    公开(公告)号：WO2009008982A2

    公开(公告)日：2009-01-15

    申请号：PCT/US2008/008199

    申请日：2008-06-30

    Applicant: LAM RESEARCH CORPORATION ,  RAVKIN, Michael ,  KABANSKY, Alex ,  DELARIOS, John, M.

    Inventor： RAVKIN, Michael ,  KABANSKY, Alex ,  DELARIOS, John, M.

    IPC: F26B21/00 ,  F26B21/06

    CPC classification number: B08B3/04 ,  H01L21/67028 ,  H01L21/67051 ,  Y10S134/902

    Abstract: A system for processing a substrate is described. The system includes a proximity head, a mechanism, and a liquid supply. The proximity head is configured to generate a controlled meniscus. Specifically, the proximity head has a plurality of dispensing nozzles formed on a face of the proximity head. The dispensing nozzles are configured to supply a liquid to the meniscus and the suction holes are added to remove a used liquid from the meniscus. The mechanism moves the proximity head or the substrate with respect to each other while maintaining contact between the meniscus and a surface of the substrate. The movement causes a thin layer of the liquid to remain on the surface after being contacted by the meniscus. The liquid supply is in fluid communication with the dispensing nozzles, and is configured to balance an amount of the liquid delivered to the meniscus with an amount of liquid removed from the meniscus, the amount of liquid removed from the meniscus including at least the thin layer of the liquid remaining on the surface of the substrate.

    Abstract translation: 描述用于处理衬底的系统。 该系统包括接近头，机构和液体供应。 邻近头部被配置为产生受控弯液面。 具体而言，邻近头部具有形成在邻近头部的表面上的多个分配喷嘴。 分配喷嘴被配置为向弯月面供应液体，并且添加吸入孔以从弯月面去除使用过的液体。 该机构相对于彼此移动邻近头部或衬底，同时保持弯月面和衬底的表面之间的接触。 该运动导致薄层的液体在与弯液面接触之后保留在表面上。 液体供应与分配喷嘴流体连通，并且被配置为平衡输送到弯液面的液体量与从弯月面移除的液体量，从弯液面移除的液体量至少包括薄层 残留在基材表面上的液体。

    SUBSTRATE CLEANING TECHNIQUES EMPLOYING MULTI-PHASE SOLUTION
    6.
    发明申请
    SUBSTRATE CLEANING TECHNIQUES EMPLOYING MULTI-PHASE SOLUTION 审中-公开
    使用多相解决方案的基板清洗技术

    公开(公告)号：WO2008136895A1

    公开(公告)日：2008-11-13

    申请号：PCT/US2008/004488

    申请日：2008-04-04

    Applicant: LAM RESEARCH CORPORATION ,  FREER, Erik, M. ,  DELARIOS, John, M. ,  RAVKIN, Michael ,  KOROLIK, Mikhail ,  REDEKER, Fritz, C.

    Inventor： FREER, Erik, M. ,  DELARIOS, John, M. ,  RAVKIN, Michael ,  KOROLIK, Mikhail ,  REDEKER, Fritz, C.

    IPC: H01L21/465

    CPC classification number: H01L21/02057 ,  H01L21/02052 ,  H01L21/67034 ,  H01L21/67057 ,  H01L21/67751

    Abstract: A method and system for cleaning opposed surfaces of a semiconductor wafer having particulate matter thereon. The method includes generating relative movement between a fluid and the substrate. The relative movement is in a direction that is transverse to a normal to one of the opposed surfaces and creates two spaced-apart flows. Each of the flows is adjacent to one of the opposed surfaces that is different from the opposed surface that is adjacent to the remaining flow of the plurality of flows. The fluid has coupling elements entrained therein, and the relative movement is established to impart sufficient drag upon a subset of the coupling elements to create movement of the coupling elements of the subset within the fluid. In this manner, a quantity of the drag is imparted upon the particulate matter to cause the particulate matter to move with respect to the substrate.

    Abstract translation: 一种用于清洁其上具有颗粒物质的半导体晶片的相对表面的方法和系统。 该方法包括产生流体和衬底之间的相对运动。 相对运动在与相对表面之一的法线横向的方向上，并且产生两个间隔开的流动。 每个流体与相对于与多个流动的剩余流动相邻的相对表面不同的一个相对表面相邻。 流体具有夹带在其中的耦合元件，并且建立相对运动以在联接元件的子集上施加足够的阻力以产生该流体内该子集的耦合元件的运动。 以这种方式，将一定量的阻力赋予颗粒物质以使颗粒物质相对于基底移动。

    SINGLE PHASE PROXIMITY HEAD HAVING A CONTROLLED MENISCUS FOR TREATING A SUBSTRATE
    7.
    发明申请
    SINGLE PHASE PROXIMITY HEAD HAVING A CONTROLLED MENISCUS FOR TREATING A SUBSTRATE 审中-公开
    具有受控弯头的单相接近头用于处理基板

    公开(公告)号：WO2009008982A3

    公开(公告)日：2009-04-09

    申请号：PCT/US2008008199

    申请日：2008-06-30

    Applicant: LAM RES CORP ,  RAVKIN MICHAEL ,  KABANSKY ALEX ,  DELARIOS JOHN M

    Inventor： RAVKIN MICHAEL ,  KABANSKY ALEX ,  DELARIOS JOHN M

    IPC: F26B21/00 ,  F26B21/06

    CPC classification number: B08B3/04 ,  H01L21/67028 ,  H01L21/67051 ,  Y10S134/902

    Abstract: A system for processing a substrate is described. The system includes a proximity head, a mechanism, and a liquid supply. The proximity head is configured to generate a controlled meniscus. Specifically, the proximity head has a plurality of dispensing nozzles formed on a face of the proximity head. The dispensing nozzles are configured to supply a liquid to the meniscus and the suction holes are added to remove a used liquid from the meniscus. The mechanism moves the proximity head or the substrate with respect to each other while maintaining contact between the meniscus and a surface of the substrate. The movement causes a thin layer of the liquid to remain on the surface after being contacted by the meniscus. The liquid supply is in fluid communication with the dispensing nozzles, and is configured to balance an amount of the liquid delivered to the meniscus with an amount of liquid removed from the meniscus, the amount of liquid removed from the meniscus including at least the thin layer of the liquid remaining on the surface of the substrate.

    Abstract translation: 描述了用于处理基板的系统。 该系统包括一个临近头，一个机构和一个液体供应。 接近头被配置为生成受控弯月面。 具体而言，接近头具有形成在接近头的表面上的多个分配喷嘴。 分配喷嘴构造成向弯月面供应液体，并且添加抽吸孔以从弯月面移除使用过的液体。 该机构使接近头或基底相对于彼此移动，同时保持弯月面与基底表面之间的接触。 该运动使液体薄层在与弯月面接触后保留在表面上。 液体供应装置与分配喷嘴流体连通，并且被配置为平衡输送到弯月面的液体的量与从弯月面移除的一定量的液体，从弯月面移除的液体的量包括至少薄层 剩余在基材表面上的液体。

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