公开(公告)号：WO2005043599A3

公开(公告)日：2005-07-14

申请号：PCT/US2004036406

申请日：2004-10-29

Applicant: APPLIED MATERIALS INC ,  DEMOS ALEXANDER T ,  PONNEKANTI HARI K ,  ZHAO JUN ,  ARMER HELEN R

Inventor： DEMOS ALEXANDER T ,  PONNEKANTI HARI K ,  ZHAO JUN ,  ARMER HELEN R

IPC: H01J37/077

CPC classification number: H01J37/317 ,  H01J3/025 ,  H01J37/077

Abstract: One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) a chamber; (b) a cathode (122) having a surface of relatively large area that is exposed to an inside of the chamber; (c) an anode (126) having holes therein that is disposed inside the chamber and spaced apart from the cathode by a working distance; (d) a wafer holder (130) disposed inside the chamber facing the anode; (e) a source of negative voltage (129) whose output is applied to the cathode to provide a cathode voltage; (f) a source of voltage whose output is applied to the anode (131); (g) a gas inlet (129) adapted to admit gas into the chamber at an introduction rate; and (h) a pump (139) adapted to exhaust gas from the chamber at an exhaust rate, the introduction rate and the exhaust rate providing a gas pressure in the chamber; wherein values of cathode voltage, gas pressure, and the working distance are such that there is no arcing between the cathode and anode and the working distance is greater than an electron mean free path.

Abstract translation: 本发明的一个实施例是一种电子束处理装置，包括：（a）室; （b）具有暴露于所述腔室内部的相对较大面积表面的阴极（122）; （c）其中具有孔的阳极（126），其设置在所述室内并与所述阴极间隔开工作距离; （d）设置在所述室内面向所述阳极的晶片保持器（130） （e）负电压源（129），其输出被施加到阴极以提供阴极电压; （f）其输出端施加到阳极（131）的电压源; （g）气体入口（129），其适于以引入速率将气体引入所述腔室; 和（h）适于以排气速率从所述室排出气体的泵（139），所述引入速率和排气速率在所述室中提供气体压力; 其中阴极电压，气体压力和工作距离的值使得阴极和阳极之间没有电弧，并且工作距离大于电子平均自由程。

公开(公告)号：WO2005043599A2

公开(公告)日：2005-05-12

申请号：PCT/US2004/036406

申请日：2004-10-29

Applicant: APPLIED MATERIALS, INC. ,  DEMOS, Alexander, T. ,  PONNEKANTI, Hari, K. ,  ZHAO, Jun ,  ARMER, Helen, R.

Inventor： DEMOS, Alexander, T. ,  PONNEKANTI, Hari, K. ,  ZHAO, Jun ,  ARMER, Helen, R.

IPC: H01L

CPC classification number: H01J37/317 ,  H01J3/025 ,  H01J37/077

Abstract: One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) a chamber; (b) a cathode having a surface of relatively large area that is exposed to an inside of the chamber; (c) an anode having holes therein that is disposed inside the chamber and spaced apart from the cathode by a working distance; (d) a wafer holder disposed inside the chamber facing the anode; (e) a source of negative voltage whose output is applied to the cathode to provide a cathode voltage; (f) a source of voltage whose output is applied to the anode; (g) a gas inlet adapted to admit gas into the chamber at an introduction rate; and (h) a pump adapted to exhaust gas from the chamber at an exhaust rate, the introduction rate and the exhaust rate providing a gas pressure in the chamber; wherein values of cathode voltage, gas pressure, and the working distance are such that there is no arcing between the cathode and anode and the working distance is greater than an electron mean free path.

Abstract translation: 本发明的一个实施例是一种电子束处理装置，包括：（a）室; （b）具有暴露于所述室内部的相对较大面积的表面的阴极; （c）其中具有孔的阳极，其设置在室内并与阴极间隔开工作距离; （d）设置在面向阳极的腔室内的晶片保持器; （e）负电压源，其输出被施加到阴极以提供阴极电压; （f）其输出端施加到阳极的电压源; （g）气体入口，其适于以引入速率将气体进入腔室; 以及（h）适于以排气速度从所述室排出气体的泵，所述引入速率和排气速率在所述室中提供气体压力; 其中阴极电压，气体压力和工作距离的值使得阴极和阳极之间没有电弧，并且工作距离大于电子平均自由程。