MEASUREMENT OF COMPOSITION FOR THIN FILMS
    1.
    发明申请
    MEASUREMENT OF COMPOSITION FOR THIN FILMS 审中-公开
    薄膜组合物的测定

    公开(公告)号:WO2013003122A3

    公开(公告)日:2013-06-06

    申请号:PCT/US2012043157

    申请日:2012-06-19

    CPC classification number: G01N21/211 G01N21/8422 G01N2021/213

    Abstract: The present invention includes generating a three-dimensional design of experiment (DOE) for a plurality of semiconductor wafers, a first dimension of the DOE being a relative amount of a first component of the thin film, a second dimension of the DOE being a relative amount of a second component of the thin film, a third dimension of the DOE being a thickness of the thin film, acquiring a spectrum for each of the wafers, generating a set of optical dispersion data by extracting a real component (n) and an imaginary component (k) of the complex index of refraction for each of the acquired spectrum, identifying one or more systematic features of the set of optical dispersion data; and generating a multi-component Bruggeman effective medium approximation (BEMA) model utilizing the identified one or more systematic features of the set of optical dispersion data.

    Abstract translation: 本发明包括生成多个半导体晶片的实验(DOE)的三维设计,DOE的第一维度是薄膜的第一分量的相对量,DOE的第二维度是相对的 量的第二分量,DOE的第三维度是薄膜的厚度,获取每个晶片的光谱,通过提取实数分量(n)和生成一组光散射数据,生成一组光散射数据 用于识别所述光学色散数据集合中的一个或多个系统特征的每个所获取的光谱的复折射率的虚分量(k); 以及使用所述一组或多个光学色散数据的一个或多个系统特征来生成多分量Bruggeman有效中等近似(BEMA)模型。

    MEASUREMENT OF COMPOSITION FOR THIN FILMS
    2.
    发明申请
    MEASUREMENT OF COMPOSITION FOR THIN FILMS 审中-公开
    薄膜组成的测量

    公开(公告)号:WO2013003122A2

    公开(公告)日:2013-01-03

    申请号:PCT/US2012/043157

    申请日:2012-06-19

    CPC classification number: G01N21/211 G01N21/8422 G01N2021/213

    Abstract: The present invention includes generating a three-dimensional design of experiment (DOE) for a plurality of semiconductor wafers, a first dimension of the DOE being a relative amount of a first component of the thin film, a second dimension of the DOE being a relative amount of a second component of the thin film, a third dimension of the DOE being a thickness of the thin film, acquiring a spectrum for each of the wafers, generating a set of optical dispersion data by extracting a real component (n) and an imaginary component (k) of the complex index of refraction for each of the acquired spectrum, identifying one or more systematic features of the set of optical dispersion data; and generating a multi-component Bruggeman effective medium approximation (BEMA) model utilizing the identified one or more systematic features of the set of optical dispersion data.

    Abstract translation: 本发明包括为多个半导体晶片产生实验的三维设计(DOE),DOE的第一维度是薄膜的第一组分的相对量, 所述DOE的第二维度是所述薄膜的第二分量的相对量,所述DOE的第三维度是所述薄膜的厚度,获取每个晶片的光谱,通过提取 识别所获取的光谱中的每一个的复折射率的实数分量(n)和虚分量(k),识别该组光学色散数据的一个或多个系统特征; 以及利用所述一组光学色散数据的所识别的一个或多个系统特征来生成多分量Bruggeman有效介质近似(BEMA)模型。

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