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    Metamorphic layers in multijunction solar cells
    1.
    发明专利
    Metamorphic layers in multijunction solar cells 有权
    多功能太阳能电池中的多晶层

    公开(公告)号：JP2011071548A

    公开(公告)日：2011-04-07

    申请号：JP2010280287

    申请日：2010-12-16

    Applicant: Emcore Solar Power Inc ,  エムコア ソーラー パワー インコーポレイテッド

    Inventor： CORNFELD ARTHUR ,  STAN MARK A

    IPC: H01L31/04

    CPC classification number: H01L31/06 ,  H01L31/03046 ,  H01L31/06875 ,  H01L31/0693 ,  H01L31/184 ,  H01L31/1844 ,  Y02E10/544

    Abstract: PROBLEM TO BE SOLVED: To provide integrated semiconductor structures including a multijunction solar cell having a metamorphic layer.
    SOLUTION: A method of forming a multijunction solar cell comprising an upper subcell, a middle subcell, and a lower subcell includes steps of: providing a first substrate for epitaxial growth of semiconductor material; forming a first solar subcell having a first band gap on the substrate; forming a second solar subcell having a second band gap smaller than the first band gap over the first subcell; forming a grading interlayer over the second subcell, which has a third band gap larger than the second band gap; and forming a third solar subcell having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供包括具有变质层的多结太阳能电池的集成半导体结构。 解决方案：一种形成包括上部子电池，中间子电池和下部子电池的多结太阳能电池的方法包括以下步骤：提供用于半导体材料外延生长的第一衬底; 在所述基板上形成具有第一带隙的第一太阳能子电池; 形成具有比所述第一子电池上的所述第一带隙小的第二带隙的第二太阳能子电池; 在所述第二子电池上形成具有比所述第二带隙大的第三带隙的分级中间层; 以及形成具有小于所述第二带隙的第四带隙的第三太阳能子电池，使得所述第三子电池相对于所述第二子电池晶格失配。 版权所有（C）2011，JPO＆INPIT

    Multi-junction solar cell and method of manufacturing the same
    3.
    发明专利
    Multi-junction solar cell and method of manufacturing the same 有权
    多功能太阳能电池及其制造方法

    公开(公告)号：JP2014195118A

    公开(公告)日：2014-10-09

    申请号：JP2014120291

    申请日：2014-06-11

    Applicant: Emcore Solar Power Inc ,  エムコア ソーラー パワー インコーポレイテッド

    Inventor： CORNFELD ARTHUR ,  STAN MARK A ,  VARGHESE TANSEN ,  NEWMAN FRED

    IPC: H01L31/0687 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/0735

    CPC classification number: H01L31/1852 ,  H01L31/022425 ,  H01L31/06875 ,  H01L31/0693 ,  H01L31/1844 ,  Y02E10/544

    Abstract: PROBLEM TO BE SOLVED: To provide a multi-junction solar cell including a metamorphic layer, and a method of manufacturing the same.SOLUTION: In a method of manufacturing a multi-junction solar cell including an upper sub-cell, a middle sub-cell, and a lower sub-cell, the method includes the steps of: preparing a first substrate for epitaxial growth of a semiconductor material; forming a first solar sub-cell having a first band gap on the substrate; forming a second solar sub-cell having a second band gap smaller than the first band gap on the first solar sub-cell; forming a burier layer on the second sub-cell to prevent threading dislocations; forming a grading middle layer having a third band gap larger than the second band gap on the barrier layer; and forming a third solar sub-cell, on the grading middle layer, having a fourth band gap smaller than the second band gap and lattice-mismatched to the second sub-cell.

    Abstract translation: 要解决的问题：提供一种包括变质层的多结太阳能电池及其制造方法。解决方案：在制造包括上部子电池的多结太阳能电池的方法中， 电池和下部子电池，该方法包括以下步骤：制备用于半导体材料的外延生长的第一衬底; 在所述基板上形成具有第一带隙的第一太阳能子电池; 形成具有小于第一太阳能子电池上的第一带隙的第二带隙的第二太阳能子电池; 在第二子单元上形成公里层以防止穿透位错; 形成具有比阻挡层上的第二带隙大的第三带隙的分级中间层; 以及在所述分级中间层上形成具有比所述第二带隙小的第四带隙并与所述第二子单元格子失配的第三太阳能子电池。

    MULTI-JUNCTION SOLAR BATTERY
    5.
    发明专利
    MULTI-JUNCTION SOLAR BATTERY 审中-公开

    公开(公告)号：JP2013254956A

    公开(公告)日：2013-12-19

    申请号：JP2013117666

    申请日：2013-06-04

    Applicant: EMCORE SOLAR POWER INC

    Inventor： PRAVIN PATEL ,  BENJAMIN CHO

    IPC: H01L31/04

    Abstract: PROBLEM TO BE SOLVED: To improve a metamorphic multi-junction solar battery having at least two InGaAs solar battery sub-cells in its performance under AM0 environment.SOLUTION: The multi-junction solar battery comprises: a first solar battery sub-cell 3 having a first band gap and a first short-circuit current; a second solar battery sub-cell 5 having a second band gap larger than the first band gap and a second short-circuit current larger than the first short-circuit current by an amount within a range between 2% and 6% inclusive; a third solar battery sub-cell 9 having a third band gap larger than the second band gap and a third short-circuit current smaller than the first short-circuit current by an amount within a range between 2% and 6% inclusive; and a fourth solar battery sub-cell 13 having a fourth band gap larger than the third band gap and a fourth short-circuit current smaller than the third short-circuit current by an amount within a range between 6% and 10% inclusive.

    Four junction inverted metamorphic multijunction solar cell with two metamorphic layers
    6.
    发明专利
    Four junction inverted metamorphic multijunction solar cell with two metamorphic layers 审中-公开
    具有两个元素层的四连体反相多晶多晶太阳能电池

    公开(公告)号：JP2010118667A

    公开(公告)日：2010-05-27

    申请号：JP2009276955

    申请日：2009-11-13

    Applicant: Emcore Solar Power Inc ,  エムコア ソーラー パワー インコーポレイテッド

    Inventor： CORNFELD ARTHUR ,  CHO BENJAMIN

    IPC: H01L31/04

    CPC classification number: H01L31/06875 ,  H01L31/078 ,  H01L31/1844 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

    Abstract: PROBLEM TO BE SOLVED: To manufacture a solar cell which is commercially practical and has high efficiency of energy using a manufacturing method commercially established for manufacturing an inversion metamorphic multijunction cell structure.
    SOLUTION: The multijunction-type solar cell includes an upper first solar subcell having a first band gap, a second solar subcell having a second band gap smaller than the first band gap adjacent to the first solar subcell, a first slope interlayer having a third band gap larger than the second band gap adjacent to the second solar subcell, a third solar subcell in a lattice unmatched state to the second subcell having a fourth band gap smaller than the second band gap adjacent to the first slope interlayer. A second slope interlayer is adjacent to the third solar subcell. The second slope interlayer has a fifth band gap larger than the fourth band gap. A lower fourth solar subcell is adjacent to the second slope interlayer. The lower fourth solar subcell has a sixth band gap smaller than the fourth band gap. The lower fourth solar subcell is constituted to be in the lattice unmatched state to the third subcell.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：使用商业上建立的用于制造反转变质多结单元结构的制造方法来制造商业上可用且具有高能量效率的太阳能电池。 解决方案：多结型太阳能电池包括具有第一带隙的上部第一太阳能子电池，具有小于与第一太阳能子电池相邻的第一带隙的第二带隙的第二太阳能子电池，第一斜面中间层， 与第二太阳能子电池相邻的第二带隙大的第三带隙，与第二子电池相比格子不匹配状态的第三太阳能子电池具有小于与第一斜坡中间层相邻的第二带隙的第四带隙。 第二斜坡中间层与第三太阳能子电池相邻。 第二斜率中间层具有大于第四带隙的第五带隙。 较低的第四太阳能子电池与第二斜坡中间层相邻。 较低的第四太阳能子电池具有小于第四带隙的第六带隙。 下部第四太阳能子电池构成为与第三子电池处于格子不匹配状态。 版权所有（C）2010，JPO＆INPIT

    Receiver structure for photovoltaic concentrator system comprising group iii-v compound semiconductor solar cell
    8.
    发明专利
    Receiver structure for photovoltaic concentrator system comprising group iii-v compound semiconductor solar cell 审中-公开
    包含III-V族化合物半导体太阳能电池的光电集中器系统的接收器结构

    公开(公告)号：JP2011003896A

    公开(公告)日：2011-01-06

    申请号：JP2010130070

    申请日：2010-06-07

    Applicant: Emcore Solar Power Inc ,  エムコア ソーラー パワー インコーポレイテッド

    Inventor： SEEL STEVE ,  BUIE DAMIEN ,  BLUMENFELD PHILIP ,  FORESI JAMES ,  NAGYVARY JOHN ,  HOFFMANN W RICHARD JR

    IPC: H01L31/042 ,  H01L31/04

    CPC classification number: H01L31/18 ,  H01L31/03046 ,  H01L31/052 ,  H01L31/0543 ,  H01L31/0547 ,  Y02E10/52 ,  Y02E10/544 ,  Y02P70/521

    Abstract: PROBLEM TO BE SOLVED: To provide a receiver structure for a photovoltaic concentrator system comprising compound semiconductor solar cells, wherein the receiver structure is designed to gather concentrated solar energy toward upper surfaces of the solar cells, and has high energy efficiency.SOLUTION: The receiver structure 100 for use in a concentrating photovoltaic system includes a ceramic substrate 126, a III-V compound semiconductor solar cell 102, and a heat sink 120. The ceramic substrate has a first metallized surface and an opposing second metallized surface. The first metallized surface of the ceramic substrate has a plurality of separated conductive regions. The solar cell has a conductive first surface connected to a first one of the conductive regions of the ceramic substrate and an opposing second surface having a conductive contact connected to a second one of the conductive regions. The heat sink is bonded to the second metallized surface of the ceramic substrate with a thermally conductive attach media, such as a metal-filled epoxy adhesive.

    Abstract translation: 要解决的问题：为了提供一种包含化合物半导体太阳能电池的光伏集中器系统的接收机结构，其中接收机结构被设计成将太阳能集中聚集到太阳能电池的上表面，并且具有高能量效率。解决方案：接收器 集中光伏系统中使用的结构100包括陶瓷衬底126，III-V族化合物半导体太阳能电池102和散热片120.陶瓷衬底具有第一金属化表面和相对的第二金属化表面。 陶瓷基板的第一金属化表面具有多个分离的导电区域。 太阳能电池具有连接到陶瓷衬底的第一导电区域的导电第一表面和相对的第二表面，其具有连接到第二导电区域的导电触点。 散热器通过诸如填充有金属的环氧树脂粘合剂之类的导热附着介质结合到陶瓷衬底的第二金属化表面上。

    Alternative substrate of inversion altered multi-junction solar battery
    9.
    发明专利
    Alternative substrate of inversion altered multi-junction solar battery 审中-公开
    反相多功能太阳能电池的替代基板

    公开(公告)号：JP2010118666A

    公开(公告)日：2010-05-27

    申请号：JP2009276954

    申请日：2009-11-13

    Applicant: Emcore Solar Power Inc ,  エムコア ソーラー パワー インコーポレイテッド

    Inventor： NEWMAN FRED

    IPC: H01L31/04 ,  H01L31/078

    CPC classification number: H01L31/0392 ,  H01L31/022425 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/06875 ,  H01L31/0693 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

    Abstract: PROBLEM TO BE SOLVED: To provide the new method of manufacturing a solar battery. SOLUTION: In the method, a solar battery is manufactured by preparing a first substrate, forming a solar battery by depositing a layer formed by laminating the first substrate and a semiconductor substance in this sequence, attaching and adhering an alternate second substrate constituted of a substances having thermal expansion coefficient substantially similar to that of a semiconductor layer of the upper portion of the sequentially laminated layer, and removing the first substrate. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供制造太阳能电池的新方法。 解决方案：在该方法中，通过制备第一基板来制造太阳能电池，通过以下述顺序沉积通过层叠第一基板和半导体物质形成的层来形成太阳能电池，从而将构成的第二基板 具有与顺序层叠层的上部的半导体层的热膨胀系数基本相似的热膨胀系数的物质，以及除去第一基板。 版权所有（C）2010，JPO＆INPIT

    Plural exponentially doped layers in inverted metamorphic multijunction solar cells
    10.
    发明专利
    Plural exponentially doped layers in inverted metamorphic multijunction solar cells 有权
    逆转多元多功能太阳能电池中的多余指数层

    公开(公告)号：JP2013165299A

    公开(公告)日：2013-08-22

    申请号：JP2013105060

    申请日：2013-05-17

    Applicant: Emcore Solar Power Inc ,  エムコア ソーラー パワー インコーポレイテッド

    Inventor： STAN MARK A ,  CORNFELD ARTHUR ,  LEY VANCE

    IPC: H01L31/04

    CPC classification number: H01L31/06875 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/0693 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

    Abstract: PROBLEM TO BE SOLVED: To provide multijunction solar cells including a metamorphic layer.SOLUTION: A method of manufacturing a multijunction solar cell including an upper subcell, a middle subcell and a lower subcell includes: providing first substrate for the epitaxial growth of semiconductor material; forming on the substrate a first solar subcell having a first band gap; forming over the first solar subcell a second solar subcell having a second band gap smaller than the first band gap; forming over the second subcell a grading interlayer having a third band gap greater than the second band gap; and forming over the grading interlayer a third solar subcell having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell, where at least one of the bases has an exponentially doped profile.

    Abstract translation: 要解决的问题：提供包括变质层的多结太阳能电池。解决方案：制造包括上部子电池，中间子电池和下部子电池的多结太阳能电池的方法包括：提供用于半导体材料的外延生长的第一衬底; 在所述基板上形成具有第一带隙的第一太阳能子电池; 在所述第一太阳能子电池上形成具有小于所述第一带隙的第二带隙的第二太阳能子电池; 在所述第二子电池上形成具有大于所述第二带隙的第三带隙的分级中间层; 以及在所述分级中间层上形成具有小于所述第二带隙的第四带隙的第三太阳能子电池，使得所述第三子电池相对于所述第二子电池晶格失配，其中所述基极中的至少一个具有指数型掺杂分布。

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