公开(公告)号：DE60208294T2

公开(公告)日：2006-08-31

申请号：DE60208294

申请日：2002-09-30

Applicant: EUDYNA DEVICES USA INC ,  EUDYNA DEVICES INC ,  FUJITSU LTD

Inventor： DAWN DEBASIS ,  CAMARGO EDMAR ,  OHASHI YOJI

IPC: H01P5/107

Abstract: A planar structure is provided for coupling electromagnetic signals between a planar transmission line and a waveguide (10). The planar structure comprises a shielded patch antenna (24) and one or more capacitive diaphragms (28) disposed adjacent to the patch antenna (24). This structure is advantageous to MMIC (monolithic microwave integrated circuit) modules in connecting from a planar transmission line of a substrate carrying an MMIC to an external waveguide without the need of a non-planar back metal short, which is normally essential to avoid back scattering from waveguide and also normally needed to achieve impedance matching. The disclosed patch antenna (24) radiates into the waveguide (10) while the antenna's ground plane reduces back scattering from the waveguide (10). The one or more capacitive diaphragms (28) provide impedance matching between the microstrip and the waveguide (10).

公开(公告)号：DE60229820D1

公开(公告)日：2008-12-24

申请号：DE60229820

申请日：2002-09-11

Applicant: EUDYNA DEVICES INC

Inventor： KAWANO TAKETO ,  IWAIDA KOICHI ,  UGAI ATSUSHI

IPC: G02B6/36 ,  G02B6/38

Abstract: An optical fiber device includes a rigid pipe (4) provided to cover the outer peripheries of a fixing joint portion (2) and an optical fiber (1). The tip portion (4a) of the rigid pipe (4) has a gap for providing flexibility between the optical fiber (1) and the tip portion (4a). Therefore, the rigid pipe (4) suppresses bending of the optical fiber (1) to avoid concentration of stress in the fixing joint portion (2) for fixing the optical fiber (1) to an optical unit section, thereby avoiding breakage of the optical fiber (1) in the fixing joint portion (2). The optical fiber device also includes a ferrule (3a) and is used to connect the optical fiber (1) to an optical unit (3b).

公开(公告)号：DE60120035T2

公开(公告)日：2006-10-26

申请号：DE60120035

申请日：2001-03-01

Applicant: EUDYNA DEVICES INC

Inventor： TOKUMITSU TSUNEO ,  BABA OSAMU

IPC: H03B5/18 ,  H03B5/12

Abstract: In a microwave voltage controlled oscillator, a negative resistance circuit (5) having an output terminal is connected to a first terminal of a strip shaped resonator (1). The anode of a variable capacitance diode (2) is connected to a second terminal of the strip shaped resonator via a capacitor (1').The cathode of the variable capacitance diode is grounded. One terminal of a high impedance strip shaped line (3) is connected to the anode of the variable capacitance diode (2). The other terminal of the strip shaped line is grounded via a capacitor (4). The capacitor (4) has sufficiently low impedance at an oscillation frequency. The microwave VCO may be applied to an automobile radar.

公开(公告)号：WO2005084288A2

公开(公告)日：2005-09-15

申请号：PCT/US2005006521

申请日：2005-02-28

Applicant: EUDYNA DEVICES INC ,  BOS THOMAS A ,  CAMARGO EDMAR

Inventor： BOS THOMAS A ,  CAMARGO EDMAR

IPC: H01Q11/12 ,  H03K9/00 ,  H04B1/04 ,  H04B1/28 ,  H04B1/30 ,  H04L27/06

CPC classification number: H04B1/30 ,  H04B1/0475 ,  H04B1/28

Abstract: A sub-harmonic mixer having at least one diode ring array used for up-conversion in a transmitter and for down-conversion in a receiver. Each diode ring array has a plurality of (e.g., four) diode rings arranged in parallel. The diode ring array may be connected in parallel or series with the signal flowing in the circuit. In a transmitter, a local oscillator (LO) generates an LO frequency signal. The sub-harmonic mixer generates a signal having twice the LO frequency using the LO frequency signal, and multiplies it to an intermediate frequency (IF) signal to generate a radio frequency (RF) signal for transmission. The sub­harmonic mixer may be a sub-harmonic image rejection mixer having two diode ring arrays (i.e., sub-harmonic mixers) that are coupled together through a 90 hybrid at an input and a 90 hybrid at an output. In a receiver, the sub-harmonic mixer receives an input RF signal and generates an output IF signal in a reverse process.

Abstract translation: 具有至少一个二极管环形阵列的次谐波混频器，用于发射机中的上变频和接收机中的下变频。 每个二极管环形阵列具有多个（例如四个）并联排列的二极管环。 二极管环形阵列可以与在电路中流动的信号并联或串联连接。 在发射机中，本地振荡器（LO）产生LO频率信号。 次谐波混频器使用LO频率信号生成具有两倍LO频率的信号，并将其乘以中频（IF）信号以生成用于传输的射频（RF）信号。 分谐波混频器可以是具有两个二极管环形阵列（即子谐波混频器）的亚谐波镜像抑制混频器，其通过输入端的90°混合器和输出端的90°混合器耦合在一起。 在接收器中，次谐波混频器接收输入RF信号并且以相反的过程产生输出IF信号。

公开(公告)号：WO2005084288A3

公开(公告)日：2005-09-15

申请号：PCT/US2005/006521

申请日：2005-02-28

Applicant: EUDYNA DEVICES, INC. ,  BOS, Thomas, A. ,  CAMARGO, Edmar

Inventor： BOS, Thomas, A. ,  CAMARGO, Edmar

IPC: H04B1/04

Abstract: A sub-harmonic mixer having at least one diode ring array used for up-conversion in a transmitter and for down-conversion in a receiver. Each diode ring array has a plurality of (e.g., four) diode rings arranged in parallel. The diode ring array may be connected in parallel or series with the signal flowing in the circuit. In a transmitter, a local oscillator (LO) generates an LO frequency signal. The sub-harmonic mixer generates a signal having twice the LO frequency using the LO frequency signal, and multiplies it to an intermediate frequency (IF) signal to generate a radio frequency (RF) signal for transmission. The sub­harmonic mixer may be a sub-harmonic image rejection mixer having two diode ring arrays (i.e., sub-harmonic mixers) that are coupled together through a 90 ° hybrid at an input and a 90 ° hybrid at an output. In a receiver, the sub-harmonic mixer receives an input RF signal and generates an output IF signal in a reverse process.

公开(公告)号：WO2006017806A1

公开(公告)日：2006-02-16

申请号：PCT/US2005/028061

申请日：2005-08-03

Applicant: EUDYNA DEVICES, INC. ,  PIERNAS, Belinda

Inventor： PIERNAS, Belinda

IPC: H01P5/18

CPC classification number: H01P5/187

Abstract: A broadside 90° microwave coupler is composed of three metal layers in a homogeneous dielectric media. The coupler is constructed in a multi-layer configuration with two conductor strips arranged on top of each other so as to be electro-magnetically coupled. A ground plane formed with a third metal layer below the coupled conductor strips is opened so that it is separated from the conductor strips by a gap. The two conductor strips are fully embedded into the dielectric layer. The characteristic physical dimensions of the coupler are determined to achieve the desired coupling coefficient while maintaining low reflection, high isolation and phase balance at the output ports of the coupler.

Abstract translation: 宽边90°微波耦合器由均匀介电介质中的三个金属层组成。 耦合器构造成多层结构，其中两个导体条布置在彼此的顶部上，以便电磁耦合。 在耦合的导体条下方形成有第三金属层的接地平面被打开，使得它与导体条分开一个间隙。 两个导体条完全嵌入电介质层。 确定耦合器的特征物理尺寸以实现期望的耦合系数，同时保持耦合器的输出端口处的低反射，高隔离度和相位平衡。

公开(公告)号：DE602007009151D1

公开(公告)日：2010-10-28

申请号：DE602007009151

申请日：2007-05-29

Applicant: EUDYNA DEVICES INC

Inventor： TOKUMITSU TSUNEO ,  TANGO HIDEKI ,  ANEGAWA OSAMU

IPC: H01P5/02 ,  H01P5/08

公开(公告)号：DE602007000418D1

公开(公告)日：2009-02-12

申请号：DE602007000418

申请日：2007-03-26

Applicant: EUDYNA DEVICES INC

Inventor： ISHIKAWA TSUTOMU

IPC: H01S5/0625 ,  H01S5/026 ,  H01S5/125

公开(公告)号：JP2009177140A

公开(公告)日：2009-08-06

申请号：JP2008308984

申请日：2008-12-03

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： ISHIKAWA TSUTOMU ,  MACHIDA TOYOTOSHI ,  TANAKA HIROKAZU

IPC: H01S5/0687

Abstract: PROBLEM TO BE SOLVED: To provide a method of testing a wavelength-tunable laser that prevents an increase in the number of components, the number of assembling processes or the like, and detects the optimal operation point, and to provide a method of controlling the wavelength-tunable laser and a laser device. SOLUTION: The method is provided for testing a wavelength-tunable laser (10) with a resonator including wavelength selection portions (11, 12) having wavelength property peaks different from each other. The method includes: a first step of oscillating the wavelength-tunable laser at a predetermined wavelength based on an initial set value; a second step of detecting a discontinuity point of gain condition change of the wavelength-tunable laser while changing the wavelength property of the wavelength selection portions; and a third step of calculating a stable operation point of the wavelength selection portions based on a limiting point of an oscillation condition at the predetermined wavelength, the limiting point being a point when the discontinuity point is detected. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种测试波长可调激光器的方法，其防止部件数量的增加，组装过程的数量等，并且检测最佳操作点，并且提供一种方法 控制波长可调激光器和激光器件。 解决方案：提供了一种用包括具有波长特性峰值彼此不同的波长选择部分（11,12）的谐振器来测试波长可调激光器（10）的方法。 该方法包括：基于初始设定值使波长可调激光器以预定波长振荡的第一步骤; 第二步骤，在改变波长选择部分的波长特性的同时检测波长可调激光器的增益条件变化的不连续点; 以及第三步骤，基于所述预定波长的振荡条件的限制点计算所述波长选择部分的稳定操作点，所述限制点是当检测到所述不连续点时的点。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009055002A

公开(公告)日：2009-03-12

申请号：JP2008177391

申请日：2008-07-07

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： SAKASHITA TAKESHI ,  SAITO MASANORI

IPC: H01S5/22

Abstract: PROBLEM TO BE SOLVED: To provide an optical semiconductor device capable of suppressing a lowering of reliability and suppressing defects created on a surface of a compound semiconductor layer and method of manufacturing the same.
SOLUTION: An optical semiconductor device has a compound semiconductor layer 22 that is provided on a substrate 10 and includes a first conductivity type cladding layer 12, activation layer 14 and a second conductivity type cladding layer 16 that is the opposite of the first conductivity type. The method includes the sequential steps of: forming a diffusion source layer 42 on the compound semiconductor layer; forming a first diffusion region 23 in the compound semiconductor layer by carrying out a first heat treatment so that the first diffusion region 23 includes a light emitting facet 38 for emitting light from the activation layer, removing the diffusion source layer; forming an SiN film 46 having a refractive index of 1.9 or higher on the compound semiconductor layer; and turning the first diffusion region 23 into the second diffusion region 24 by carrying out a second heat treatment.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 解决的问题：提供能够抑制可靠性降低并抑制在化合物半导体层的表面上产生的缺陷的光半导体装置及其制造方法。 解决方案：光学半导体器件具有设置在基板10上的化合物半导体层22，其包括第一导电型包覆层12，活性层14和与第一导电型层相反的第二导电型包覆层16 导电类型。 该方法包括以下顺序步骤：在化合物半导体层上形成扩散源层42; 通过进行第一热处理，使第一扩散区23包括用于从活化层发射光的发光面38，除去扩散源层，从而在化合物半导体层中形成第一扩散区23; 在化合物半导体层上形成折射率为1.9以上的SiN膜46; 并通过进行第二热处理将第一扩散区域23转变成第二扩散区域24。 版权所有（C）2009，JPO＆INPIT