公开(公告)号：DE602007000418D1

公开(公告)日：2009-02-12

申请号：DE602007000418

申请日：2007-03-26

Applicant: EUDYNA DEVICES INC

Inventor： ISHIKAWA TSUTOMU

IPC: H01S5/0625 ,  H01S5/026 ,  H01S5/125

公开(公告)号：DE602007004759D1

公开(公告)日：2010-04-01

申请号：DE602007004759

申请日：2007-03-20

Applicant: EUDYNA DEVICES INC

Inventor： ISHIKAWA TSUTOMU

IPC: H01S5/026 ,  G02F1/01 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/12 ,  H01S5/227 ,  H01S5/32

Abstract: An optical semiconductor device (100) has a semiconductor substrate (101), an optical semiconductor region (102) and a heater (103). The optical semiconductor region (102) is provided on the semiconductor substrate (101) and has a width smaller than that of the semiconductor substrate (101). The heater (103) is provided on the optical semiconductor region (102). The optical semiconductor region (102) has a cladding region (104), an optical waveguide layer (105) and a low thermal conductivity layer (106). The optical waveguide layer (105) is provided in the cladding region (104) and has a refractive index higher than that of the cladding region (104). The low thermal conductivity layer (106) is provided between the optical waveguide layer (105) and the semiconductor substrate (101) and has a thermal conductivity lower than that of the cladding region (104).

公开(公告)号：JP2009177140A

公开(公告)日：2009-08-06

申请号：JP2008308984

申请日：2008-12-03

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： ISHIKAWA TSUTOMU ,  MACHIDA TOYOTOSHI ,  TANAKA HIROKAZU

IPC: H01S5/0687

Abstract: PROBLEM TO BE SOLVED: To provide a method of testing a wavelength-tunable laser that prevents an increase in the number of components, the number of assembling processes or the like, and detects the optimal operation point, and to provide a method of controlling the wavelength-tunable laser and a laser device. SOLUTION: The method is provided for testing a wavelength-tunable laser (10) with a resonator including wavelength selection portions (11, 12) having wavelength property peaks different from each other. The method includes: a first step of oscillating the wavelength-tunable laser at a predetermined wavelength based on an initial set value; a second step of detecting a discontinuity point of gain condition change of the wavelength-tunable laser while changing the wavelength property of the wavelength selection portions; and a third step of calculating a stable operation point of the wavelength selection portions based on a limiting point of an oscillation condition at the predetermined wavelength, the limiting point being a point when the discontinuity point is detected. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种测试波长可调激光器的方法，其防止部件数量的增加，组装过程的数量等，并且检测最佳操作点，并且提供一种方法 控制波长可调激光器和激光器件。 解决方案：提供了一种用包括具有波长特性峰值彼此不同的波长选择部分（11,12）的谐振器来测试波长可调激光器（10）的方法。 该方法包括：基于初始设定值使波长可调激光器以预定波长振荡的第一步骤; 第二步骤，在改变波长选择部分的波长特性的同时检测波长可调激光器的增益条件变化的不连续点; 以及第三步骤，基于所述预定波长的振荡条件的限制点计算所述波长选择部分的稳定操作点，所述限制点是当检测到所述不连续点时的点。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2007273650A

公开(公告)日：2007-10-18

申请号：JP2006096163

申请日：2006-03-30

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： ISHIKAWA TSUTOMU

IPC: H01S5/12

CPC classification number: H01S5/0612 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/125

Abstract: PROBLEM TO BE SOLVED: To provide an optical semiconductor device capable of causing a heater to sufficiently generate heat even with low voltage and reducing the heat radiation quantity from an electrode.
SOLUTION: The semiconductor device includes a first semiconductor region having an optical waveguide (3), the heater (9) provided on the first semiconductor region and having a plurality of coupled or divided heater segments, single first wirings (10) commonly connected to each of adjacent one ends of the heater segments adjacent to each other, and a plurality of second wirings (11) each differently provided on each of the other ends of the heater segments adjacent to each other.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 解决的问题：提供一种能够使加热器即使在低电压下也能充分产生热量并减少来自电极的热辐射量的光半导体器件。 解决方案：半导体器件包括具有光波导（3）的第一半导体区域，加热器（9）设置在第一半导体区域上并且具有多个耦合或分隔的加热器段，通常单个第一布线（10） 连接到彼此相邻的加热器段的相邻一端中的每一个，以及多个第二布线（11），每个第二布线彼此不同地设置在彼此相邻的加热器段的每个另一端上。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2009026968A

公开(公告)日：2009-02-05

申请号：JP2007188880

申请日：2007-07-19

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： MACHIDA TOYOTOSHI ,  ISHIKAWA TSUTOMU ,  TANAKA HIROKAZU

IPC: H01S5/0687

CPC classification number: H01S5/024 ,  H01S5/02415 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/0612 ,  H01S5/0617 ,  H01S5/06256 ,  H01S5/06804 ,  H01S5/0683 ,  H01S5/0687

Abstract: PROBLEM TO BE SOLVED: To provide a method of controlling a semiconductor laser in which desired optical characteristics can be obtained even if the heater has deteriorated.
SOLUTION: The method controls a semiconductor laser (10) having a wavelength-selection portion (11) whose refractive index is controllable with a heater (14). The method includes: a starting sequence having a first step for adjusting the heat value of the heater until it reaches a given value; and a wavelength control sequence having a second step for correcting the wavelength of the semiconductor laser according to the detection result of the oscillation wavelength of the semiconductor laser after the starting sequence.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种控制半导体激光器的方法，其中即使加热器已经劣化，也可以获得期望的光学特性。 解决方案：该方法控制具有可由加热器（14）控制的折射率的波长选择部分（11）的半导体激光器（10）。 该方法包括：启动顺序，具有用于调节加热器的热值直到达到给定值的第一步骤; 以及波长控制序列，其具有根据所述半导体激光器在所述起始序列之后的振荡波长的检测结果来校正所述半导体激光器的波长的第二步骤。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2007273735A

公开(公告)日：2007-10-18

申请号：JP2006097707

申请日：2006-03-31

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： ISHIKAWA TSUTOMU ,  FUJII TAKUYA

IPC: H01S5/12 ,  H01S5/0687

CPC classification number: H01S5/02276 ,  G02F1/0147 ,  H01L2224/48091 ,  H01S5/024 ,  H01S5/0261 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/06256 ,  H01S5/06804 ,  H01S5/1209 ,  H01S5/125 ,  H01L2924/00014

Abstract: PROBLEM TO BE SOLVED: To provide an optical semiconductor device capable of more correctly controlling an oscillation wavelength, and a control method thereof.
SOLUTION: The optical semiconductor device has a wavelength variable semiconductor laser chip (40) provided with a first optical waveguide (4), and a second optical waveguide (3) provided with a heater (9) on its surface and optically coupled to the first optical waveguide (4); a mount carrier (30) for mounting the wavelength variable semiconductor laser chip; a first temperature sensor (35) arranged on a first region (54), a region on the mount carrier, of any one of both sides of the wavelength variable semiconductor chip biased to the first optical waveguide rather than the second optical waveguide of the wavelength semiconductor laser chips; and a wire (37) to be connected to the heater provided so as to extend to a region of the mount carrier other than the first region.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 解决的问题：提供能够更正确地控制振荡波长的光半导体装置及其控制方法。 解决方案：光学半导体器件具有设置有第一光波导（4）的波长可变半导体激光器芯片（40）和在其表面上设置有加热器（9）的第二光波导（3），并且光耦合 到第一光波导（4）; 用于安装波长可变半导体激光芯片的安装载体（30）; 第一温度传感器（35），布置在第一区域（54）上，安装载体上的区域，偏振到第一光波导的波长可变半导体芯片的两侧中的任一侧，而不是波长的第二光波导 半导体激光芯片; 以及连接到加热器的导线（37），其被设置成延伸到除了第一区域之外的安装载体的区域。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2009044141A

公开(公告)日：2009-02-26

申请号：JP2008179731

申请日：2008-07-10

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： ISHIKAWA TSUTOMU ,  MACHIDA TOYOTOSHI ,  TANAKA HIROKAZU

IPC: H01S5/0683 ,  G02B6/12 ,  G02B6/122 ,  G02F1/01 ,  G02F1/313

Abstract: PROBLEM TO BE SOLVED: To provide an optical device and a control method thereof, which ensure desired optical characteristics even when a heater deteriorates. SOLUTION: The optical device includes an optical element (10) the temperature of which is controlled by a temperature controller (20) and having an optical waveguide the refractive index of which is controlled by means of a heater (14), a detecting section (17) for measuring a current flowing through the heater (14) and/or a voltage being applied to the heater, and a control section (50) for maintaining the power being supplied to the heater (14) at a constant level based on the measurements from the detecting section (17). The control method of the optical device controls the temperature of the optical element (10) having an optical waveguide, the refractive index of which is varied by means of the heater (14), by means of the temperature controller (20), and controls the power being supplied to the heater so as to be maintained at a constant level based on a current flowing through the heater (14) and/or a voltage being applied to the heater. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 解决的问题：提供一种光学装置及其控制方法，其即使在加热器劣化时也确保期望的光学特性。 解决方案：光学装置包括光学元件（10），其温度由温度控制器（20）控制，并具有通过加热器（14）控制其折射率的光波导， 检测部分（17），用于测量流过加热器（14）的电流和/或施加到加热器的电压;以及控制部分（50），用于将供应给加热器（14）的功率保持在恒定水平 基于来自检测部（17）的测量。 光学装置的控制方法通过温度控制器（20）控制具有通过加热器（14）折射率变化的光波导的光学元件（10）的温度，并且控制 电力被供给到加热器，以便基于流过加热器（14）的电流和/或施加到加热器的电压将其维持在恒定水平。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009044024A

公开(公告)日：2009-02-26

申请号：JP2007208816

申请日：2007-08-10

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： ISHIKAWA TSUTOMU ,  MACHIDA TOYOTOSHI ,  TANAKA HIROKAZU

IPC: H01S5/0687

Abstract: PROBLEM TO BE SOLVED: To provide a laser device and a control method of a semiconductor laser, which can control wavelength variation when the heater temperature is corrected.
SOLUTION: The semiconductor laser device (100) includes a semiconductor laser (10) having a section (11) for varying the select wavelength by means of a heater (14), and a controller (50) performing temperature control for causing the heater (14) to generate heat with a predetermined heating value, and correction temperature control for correcting the heating value of the heater (14) within a predetermined limit value.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种半导体激光器的激光装置和控制方法，其可以在校正加热器温度时控制波长变化。 解决方案：半导体激光器件（100）包括具有用于通过加热器（14）改变选择波长的部分（11）的半导体激光器（10）和执行温度控制的控制器（50），用于引起 用于以预定的热值产生热量的加热器（14），以及用于将加热器（14）的加热值校正在预定极限值内的校正温度控制。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2007273644A

公开(公告)日：2007-10-18

申请号：JP2006096075

申请日：2006-03-30

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： ISHIKAWA TSUTOMU

IPC: H01S5/026 ,  H01S5/187

CPC classification number: H01S5/0612 ,  H01S5/02453 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/3211 ,  H01S2301/173

Abstract: PROBLEM TO BE SOLVED: To provide an optical semiconductor device capable of efficiently heating an optical waveguide using heat generated in a heater, and to provide a laser chip and a laser module.
SOLUTION: The optical semiconductor device (100) includes a semiconductor substrate (101), an optical semiconductor region (102) provided on the semiconductor substrate and having a width smaller than the width of the semiconductor substrate, and a heater (103) provided on the optical semiconductor region. The optical semiconductor region includes a clad region (104), an optical waveguide layer (105) provided in the clad region and having a refractive index larger than the refractive index of the clad region, and a low thermal conductivity layer (106) provided between the optical waveguide layer and the semiconductor substrate and having a thermal conductivity smaller than the thermal conductivity of the clad layer.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 解决的问题：提供能够使用在加热器中产生的热量有效地加热光波导的光半导体装置，并提供激光芯片和激光模块。 解决方案：光半导体器件（100）包括半导体衬底（101），设置在半导体衬底上并且具有小于半导体衬底的宽度的宽度的光学半导体区域（102）和加热器（103 ）设置在光学半导体区域上。 所述光学半导体区域包括包层区（104），设置在所述包层区中并具有大于所述包层区的折射率的折射率的光波导层（105）和设置在所述包层区之间的低导热层（106） 所述光波导层和所述半导体基板的热导率小于所述包覆层的导热率。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2009026996A

公开(公告)日：2009-02-05

申请号：JP2007189340

申请日：2007-07-20

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： TANAKA HIROKAZU ,  ISHIKAWA TSUTOMU ,  MACHIDA TOYOTOSHI

IPC: H01S5/0687

CPC classification number: H01S5/0612 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/1212 ,  H01S5/125

Abstract: PROBLEM TO BE SOLVED: To provide a method of controlling a semiconductor laser which can give a desired oscillating wavelength even when temperature is controlled by a temperature control device.
SOLUTION: The method of controlling the semiconductor laser (10) mounted in a temperature control device (20), the method directed for controlling a semiconductor laser having a plurality of wavelength selection parts (11, 12) with different wavelength characteristics, includes a first step of correcting a temperature of the temperature control device according to the detection results of output wavelength of the semiconductor laser and a second step of minimizing differences in wavelength characteristics of a plurality of wavelength selection parts which vary with the temperature corrected by the control device for at least one of the wavelength selection parts.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种控制半导体激光器的方法，即使当温度由温度控制装置控制时也能够产生期望的振荡波长。 解决方案：一种控制安装在温度控制装置（20）中的半导体激光器（10）的方法，该方法旨在控制具有不同波长特性的多个波长选择部分（11,12）的半导体激光器， 包括根据半导体激光器的输出波长的检测结果来校正温度控制装置的温度的第一步骤和使由多个波长选择部件的波长特性变化的波长特性最小化的第二步骤， 用于至少一个波长选择部分的控制装置。 版权所有（C）2009，JPO＆INPIT