CHEMICAL-MECHANICAL POLISHING (CMP) SLURRY AND METHOD OF PLANARIZING SURFACES
    10.
    发明申请
    CHEMICAL-MECHANICAL POLISHING (CMP) SLURRY AND METHOD OF PLANARIZING SURFACES 审中-公开
    化学机械抛光(CMP)浆料和平面化表面的方法

    公开(公告)号:WO2005035678A1

    公开(公告)日:2005-04-21

    申请号:PCT/US2004/031751

    申请日:2004-09-28

    CPC classification number: C09G1/02 C09K3/1409 C09K3/1463 H01L21/3212

    Abstract: Compositions and methods for planarizing or polishing a surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) purified clay; and optional additives, such as (c) a chemical accelerator; and (d) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the metal and/or insulating material removed during the polishing process. The complexing or coupling agent carries away the removed metal and/or silicon dioxide insulator particles, during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing a surface comprising contacting the surface with the compositions.

    Abstract translation: 用于平坦化或抛光表面,特别是半导体晶片表面的组合物和方法。 本文所述的抛光组合物包含(a)液体载体; (b)纯化粘土; 和任选的添加剂,例如(c)化学加速剂; 和(d)能够与在抛光过程中除去的金属和/或绝缘材料化学或离子络合或耦合的络合或偶联剂。 络合或偶联剂在抛光过程中携带去除的金属和/或二氧化硅绝缘体颗粒,以防止分离的颗粒返回到它们被除去的表面。 还公开了平面化或抛光表面的方法,包括使表面与组合物接触。

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