Abstract:
Nucleotide sequences are described which can be used for target RNA-specific construction of asymmetric hammerhead ribozymes having high catalytic activity. Further, methods for the production of these asymmetric ribozymes and DNA sequences encoding them as well as compositions containing such ribozymes or DNA sequences are described.
Abstract:
The present invention relates to nucleic acids comprising a nucleotide sequence encoding at least a portion of an enzyme which catalyzes the synthesis of chitin in arthropods, a screening to assay and identify new, and method for developing chitin synthesis inhibitors.
Abstract:
The present invention relates to nucleic acids comprising a nucleotide sequence encoding at least a portion of an enzyme which catalyzes the synthesis of chitin in arthropods, inhibitors directed to said enzyme, and a method for developing said inhibitors.
Abstract:
The present invention relates to nucleic acids comprising a nucleotide sequence encoding at least a portion of an enzyme which catalyzes the synthesis of chitin in arthropods, a screening to assay and identify new, and method for developing chitin synthesis inhibitors.
Abstract:
Nucleotide sequences are described which can be used for target RNA-specific construction of asymmetric hammerhead ribozymes having high catalytic activity. Further, methods for the production of these asymmetric ribozymes and DNA sequences encoding them as well as compositions containing such ribozymes or DNA sequences are described.
Abstract:
The present invention relates to a method and a device for removal of any kind of superficial encrustation from surfaces, by the synchronous use of the fundamental and one of the harmonic frequencies of a short-pulse laser system (in the order of 1- 40 ns). This is embodied by temporal and spatial overlapping of the two beams in various ratios of energy density values between them. The present invention relates to a problem of major concern, related to the cleaning of stone-sculpted surfaces of historic and/or artistic value without any alteration to the underlying authentic surfaces. The invention can be employed in other materials such as façades, metallic surfaces, glass, paper, wood etc. as well as in other applications of industrial or medical interest, such as the removal of radioactive residues from any type of surfaces or the removal of deposits from any kind of animal tissues. The success of this method is based on the combined action of two discrete mechanisms for the removal of surface deposits, embodied by the use of laser pulses of two different wavelengths simultaneously. The suggested device is based on the spatial and temporal overlapping of the fundamental frequency with one of its harmonics, as well as the possibility to adjust the energy of each one of the two radiations individually.
Abstract:
An integrated fabrication procedure of optoelectronic (OE) system, comprising light-emitting diodes (Lasers or LEDs) as well as photodetectors fabricated with III-V compound semiconductor epitaxial layers deposited on a crystalline wafer bonded on a Silicon wafer on which the CMOS/BiCMOS integrated circuits have been fabricated, characterized in that the bonding of the wafer containing the III-V epitaxial layers with the Silicon wafer is achieved either with an adhesive epoxy or with a Wafer Bonding procedure through the employment of an intermediate layer of SOG, SiO 2 or Si 3 N 4 (or a combination of them); the intermediate layers are deposited at low temperature (below 450°C) and the bonding is accomplished at even lower temperature (below 250°C). The invention is characterized in that the integration of the microelectronic with the optoelectronic components is achieved in a three-dimensional arrangement using a wafer scale fabrication procedure.
Abstract:
An integrated fabrication procedure of optoelectronic (OE) system, comprising light-emitting diodes (Lasers or LEDs) as well as photodetectors fabricated with III-V compound semiconductor epitaxial layers deposited on a crystalline wafer bonded on a Silicon wafer on which the CMOS/BiCMOS integrated circuits have been fabricated, characterized in that the bonding of the wafer containing the III-V epitaxial layers with the Silicon wafer is achieved either with an adhesive epoxy or with a Wafer Bonding procedure through the employment of an intermediate layer of SOG, SiO 2 or Si 3 N 4 (or a combination of them); the intermediate layers are deposited at low temperature (below 450°C) and the bonding is accomplished at even lower temperature (below 250°C). The invention is characterized in that the integration of the microelectronic with the optoelectronic components is achieved in a three-dimensional arrangement using a wafer scale fabrication procedure.
Abstract:
The present invention relates to a method and a device for removal of any kind of superficial encrustation from surfaces, by the synchronous use of the fundamental and one of the harmonic frequencies of a short-pulse laser system (in the order of 1- 40 ns). This is embodied by temporal and spatial overlapping of the two beams in various ratios of energy density values between them. The present invention relates to a problem of major concern, related to the cleaning of stone-sculpted surfaces of historic and/or artistic value without any alteration to the underlying authentic surfaces. The invention can be employed in other materials such as façades, metallic surfaces, glass, paper, wood etc. as well as in other applications of industrial or medical interest, such as the removal of radioactive residues from any type of surfaces or the removal of deposits from any kind of animal tissues. The success of this method is based on the combined action of two discrete mechanisms for the removal of surface deposits, embodied by the use of laser pulses of two different wavelengths simultaneously. The suggested device is based on the spatial and temporal overlapping of the fundamental frequency with one of its harmonics, as well as the possibility to adjust the energy of each one of the two radiations individually.