公开(公告)号：DE2755399A1

公开(公告)日：1978-06-22

申请号：DE2755399

申请日：1977-12-13

Applicant: FROESCHLE ERNST PROF DIPL PHYS

Inventor： FROESCHLE ERNST PROF DIPL PHYS

IPC: H01J37/30 ,  H01J37/302 ,  H01J37/317

Abstract: The substrate is coated with an electron sensitive varnish, and the structure to be produced is illuminated in the usual way. In addition a compensation illumination is applied by which at least parts of structure surrounds which are normally not illuminated, are so illuminated by electrons that the dose component of scattered back electrons is at least partly componesated by illumination of the surrounds of the structure. The sum of parts of compensation illumination and the part of structure illumination due to the scattered back electrons is at every point of the structure and its surround the same, irrespective of whether this point was illuminated during structure illumination or not.

公开(公告)号：DE2600137A1

公开(公告)日：1977-07-07

申请号：DE2600137

申请日：1976-01-03

Applicant: FROESCHLE ERNST PROF DIPL PHYS

Inventor： FROESCHLE ERNST PROF DIPL PHYS

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/312 ,  H01J3/08 ,  H01J37/28

Abstract: The electron beam irradiation is used in semiconductor elements production, applying photolithographic methods, utilising electron beam sensitive lacquers. For this purpose the photolacquer mask structures are irradiated by electron beams of different energy, ie the edge zones of the photolacquer masks are irradiated with electron beams of higher energy. Preferably these edge zones are irradiated with an energy corresponding to an acceleration voltage of 15 k V or more. Typically the edge zones irradiated with a higher energy are narrower than 015 microns. The diameter of the electron beam for the edge zones irradiation is smaller than that of the beam for inner zones irradiation.