公开(公告)号：WO2005034200A2

公开(公告)日：2005-04-14

申请号：PCT/US2004032404

申请日：2004-09-30

Applicant: IBM ,  GEFFKEN ROBERT M ,  MOTSIFF WILLIAM T

Inventor： GEFFKEN ROBERT M ,  MOTSIFF WILLIAM T

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L

CPC classification number: H01L21/76831 ,  H01L21/76811 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An adjustable self aligned low capacitance integrated circuit air gap structure comprises a first interconnect (64a) adjacent a second interconnect (64b) on an interconnect level, spacers (60b, 60c) formed along adjacent sides of the first and second interconnects, and an air gap (68) formed between the first and second interconnects. The air gap extends above an upper surface (74a, 74b) of at least one of the first and second interconnects and below a lower surface (76a, 76b) of at least one of the first and second interconnects, and the distance between the spacers defines the width of the air gap. The air gap is self-aligned to the adjacent sides of the first and second interconnects.

Abstract translation: 可调整的自对准低电容集成电路气隙结构包括邻近互连层上的第二互连（64b）的第一互连（64a），沿第一和第二互连的相邻侧形成的间隔物（60b，60c） 间隙（68）形成在第一和第二互连之间。 空气间隙延伸到第一和第二互连中的至少一个的上表面（74a，74b）上方，并且位于第一和第二互连中的至少一个互连的下表面（76a，76b）的下方以及间隔件之间的距离 定义气隙的宽度。 气隙与第一和第二互连的相邻侧自对准。

公开(公告)号：WO2005122224A2

公开(公告)日：2005-12-22

申请号：PCT/US2005/019316

申请日：2005-06-02

Applicant: EPION CORPORATION ,  GEFFKEN, Robert, M. ,  HAUTALA, John, J.

Inventor： GEFFKEN, Robert, M. ,  HAUTALA, John, J.

IPC: H01L21/302

CPC classification number: H01L21/31144 ,  H01J2237/0812 ,  H01L21/02046 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76831

Abstract: Methods for forming a dual damascene dielectric structure in a porous ultra-low-k (ULK) dielectric material by using gas-cluster ion-beam processing are disclosed. These methods minimize hard-mask layers during dual damascene ULK processing and eliminate hard-masks in the final ULK dual damascene structure. Methods for gas-cluster ion-beam etching, densification, pore sealing and ashing are described that allow simultaneous removal of material and densification of the ULK interfaces. A novel ULK dual damascene structure is disclosed with densified interfaces and no hard-masks.

Abstract translation: 公开了通过使用气体簇离子束处理在多孔超低k（ULK）介电材料中形成双镶嵌介质结构的方法。 这些方法在双镶嵌ULK处理期间使硬掩模层最小化，并在最终的ULK双镶嵌结构中消除硬掩模。 描述了气体簇离子束蚀刻，致密化，孔密封和灰化的方法，其允许同时去除材料和ULK界面的致密化。 公开了一种新颖的ULK双镶嵌结构，其具有致密的界面并且没有硬掩模。

公开(公告)号：WO2005034200A3

公开(公告)日：2005-04-14

申请号：PCT/US2004/032404

申请日：2004-09-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GEFFKEN, Robert, M. ,  MOTSIFF, William, T.

Inventor： GEFFKEN, Robert, M. ,  MOTSIFF, William, T.

IPC: H01L21/76

Abstract: An adjustable self aligned low capacitance integrated circuit air gap structure comprises a first interconnect (64a) adjacent a second interconnect (64b) on an interconnect level, spacers (60b, 60c) formed along adjacent sides of the first and second interconnects, and an air gap (68) formed between the first and second interconnects. The air gap extends above an upper surface (74a, 74b) of at least one of the first and second interconnects and below a lower surface (76a, 76b) of at least one of the first and second interconnects, and the distance between the spacers defines the width of the air gap. The air gap is self-aligned to the adjacent sides of the first and second interconnects.

公开(公告)号：WO2006052958A3

公开(公告)日：2007-04-12

申请号：PCT/US2005040414

申请日：2005-11-08

Applicant: EPION CORP ,  GEFFKEN ROBERT M ,  HAUTALA JOHN J ,  SHERMAN STEVEN R ,  LEARN ARTHUR J

Inventor： GEFFKEN ROBERT M ,  HAUTALA JOHN J ,  SHERMAN STEVEN R ,  LEARN ARTHUR J

IPC: H01L21/44 ,  H01L23/40 ,  H01L23/48 ,  H01L23/52

CPC classification number: H01L21/76867 ,  C23C14/0605 ,  C23C14/0635 ,  C23C14/0652 ,  C23C14/221 ,  C23C16/26 ,  C23C16/325 ,  C23C16/345 ,  C23C16/513 ,  H01J2237/0812 ,  H01L21/02074 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/321 ,  H01L21/32136 ,  H01L21/76822 ,  H01L21/76825 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76865 ,  H01L21/76883 ,  H01L21/76886 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Capping layer (614) or layers on a surface of a copper interconnect wiring layer (602) for use in interconnect structures for integrated circuits and methods of forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion-beam processing. Reduced copper diffusion and improved electromigration lifetime result and the use of selective metal capping techniques and their attendant yield problems are avoided.

Abstract translation: 用于集成电路的互连结构的铜互连布线层（602）的表面上的覆盖层（614）或层，以及通过应用气体簇离子束处理形成用于集成电路的改进的集成互连结构的方法。 减少铜扩散和改善电迁移寿命，避免使用选择性金属封盖技术及其伴随产量问题。

公开(公告)号：WO2005122224A3

公开(公告)日：2006-11-09

申请号：PCT/US2005019316

申请日：2005-06-02

Applicant: EPION CORP ,  GEFFKEN ROBERT M ,  HAUTALA JOHN J

Inventor： GEFFKEN ROBERT M ,  HAUTALA JOHN J

IPC: H01L21/302 ,  H01L21/26 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/324 ,  H01L21/42 ,  H01L21/44 ,  H01L21/477 ,  H01L21/768

CPC classification number: H01L21/31144 ,  H01J2237/0812 ,  H01L21/02046 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76831

Abstract: Methods for forming a dual damascene dielectric structure in a porous ultra-low-k (ULK) dielectric material (504) by using gas- cluster ion-beam processing are disclosed. These methods minimize hard-mask layers during dual damascene ULK processing and eliminate hard-masks in the final ULK dual damascene structure. Methods for gas-cluster ion-beam etching, densification, pore sealing and ashing are described that allow simultaneous removal of material and densification of the ULK interfaces. A novel UL dual damascene structure (512) is disclosed with densified interfaces and no hard-masks.

Abstract translation: 公开了通过使用气体簇离子束处理在多孔超低k（ULK）介电材料（504）中形成双镶嵌介质结构的方法。 这些方法在双镶嵌ULK处理期间使硬掩模层最小化，并在最终的ULK双镶嵌结构中消除硬掩模。 描述了气体簇离子束蚀刻，致密化，孔密封和灰化的方法，其允许同时去除材料和ULK界面的致密化。 公开了一种新颖的UL双镶嵌结构（512），其具有致密的界面并且没有硬掩模。

公开(公告)号：WO2006052958A2

公开(公告)日：2006-05-18

申请号：PCT/US2005/040414

申请日：2005-11-08

Applicant: EPION CORPORATION ,  GEFFKEN, Robert, M. ,  HAUTALA, John, J. ,  SHERMAN, Steven, R. ,  LEARN, Arthur, J.

Inventor： GEFFKEN, Robert, M. ,  HAUTALA, John, J. ,  SHERMAN, Steven, R. ,  LEARN, Arthur, J.

IPC: H01L21/44

CPC classification number: H01L21/76867 ,  C23C14/0605 ,  C23C14/0635 ,  C23C14/0652 ,  C23C14/221 ,  C23C16/26 ,  C23C16/325 ,  C23C16/345 ,  C23C16/513 ,  H01J2237/0812 ,  H01L21/02074 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/321 ,  H01L21/32136 ,  H01L21/76822 ,  H01L21/76825 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76865 ,  H01L21/76883 ,  H01L21/76886 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods of forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion-beam processing. Reduced copper diffusion and improved electromigration lifetime result and the use of selective metal capping techniques and their attendant yield problems are avoided.

Abstract translation: 在用于集成电路的互连结构中的铜互连布线层的表面上的覆盖层或层，以及通过应用气体簇离子束处理形成用于集成电路的改进的集成互连结构的方法。 减少铜扩散和改善电迁移寿命，避免使用选择性金属封盖技术及其伴随的产量问题。