公开(公告)号：WO2018082051A1

公开(公告)日：2018-05-11

申请号：PCT/CN2016/104739

申请日：2016-11-04

Applicant: GOERTEK.INC

Inventor： WU, Li-Te ,  LIN, Ching-Tzung ,  CHEN, Ssu-Ying

IPC: G01L9/00

Abstract: A signal processing device (100), an air pressure sensor (101) assembly and an electronics apparatus are disclosed. The signal processing device (100) for a sensing signal comprises: an input unit, which is configured to receive the sensing signal；and a processing unit (310), which is configured to attenuate a higher frequency component of the sensing signal so that the value of the higher frequency component when the sensing signal is stable is lower than that when the sensing signal is changing. According to the device, it can reduce the noise in a sensing signal from an air pressure sensor (101) during a stable state.

Abstract translation: 公开了一种信号处理装置（100），气压传感器（101）组件和电子设备。 用于感测信号的信号处理设备（100）包括：输入单元，其被配置为接收感测信号;以及处理单元（310），其被配置为衰减感测信号的较高频率分量，使得 当感测信号稳定时较高频率分量的值低于感测信号改变时的值。 根据该装置，可以在稳定状态期间降低来自气压传感器（101）的感测信号中的噪声。

公开(公告)号：WO2017107097A1

公开(公告)日：2017-06-29

申请号：PCT/CN2015/098429

申请日：2015-12-23

Applicant: GOERTEK.INC

Inventor： ZOU, Quanbo

IPC: H01L33/48 ,  H01L21/677 ,  H01L21/60

CPC classification number: H01L21/67144 ,  H01L21/67132 ,  H01L25/0753

Abstract: A micro-LED transfer method and a manufacturing method are disclosed. The micro-LED transfer method comprises: coating a sacrificial layer on a carrier substrate, wherein micro-LEDs are bonded on the carrier substrate through a first bonding layer (S1100); patterning the sacrificial layer to expose micro-LEDs to be picked up (S1200); bonding the micro-LEDs to be picked up with a pickup substrate through a second bonding layer (S1300); removing the sacrificial layer by undercutting (S1400); lifting-off the micro-LEDs to be picked up from the carrier substrate (S1500); bonding the micro-LEDs on the pickup substrate with a receiving substrate through a third bonding layer (S1600); and lifting-off the micro-LEDs from the pickup substrate(S1700).

Abstract translation: 公开了一种微LED传输方法和制造方法。 该微型LED传输方法包括：在载体基板上涂覆牺牲层，其中微型LED通过第一接合层接合在载体基板上（S1100）; 图案化牺牲层以暴露待拾取的微LED（S1200）; 通过第二结合层将要拾取的微型LED与拾取基板结合（S1300）; 通过底切去除牺牲层（S1400）; 抬起要从载体基板拾取的微型LED（S1500）; 通过第三键合层将拾取基板上的微型LED与接收基板键合（S1600）; 并从拾取基板上提起微型LED（S1700）。

公开(公告)号：WO2018191883A1

公开(公告)日：2018-10-25

申请号：PCT/CN2017/081063

申请日：2017-04-19

Applicant: GOERTEK.INC

Inventor： ZOU, Quanbo ,  ZHANG, Xiaoyang ,  CHEN, Peixuan ,  FENG, Xiangxu ,  GAN, Tao ,  WANG, Zhe

IPC: H01L33/00

CPC classification number: H01L21/7813 ,  H01L27/156

Abstract: It is disclosed a micro-LED transfer method, manufacturing method and display device. The method for transferring a micro-LED array (204) comprises: patterning conductive resist (205)on a receiving substrate (202) to cover electrodes (206) for the micro-LED array (204) to be transferred； bonding the micro-LED array (204) on a first substrate (201) with the receiving substrate (202) through the conductive resist (205), wherein the first substrate (201) is laser (207) transparent; irradiating laser (207) onto the micro-LED array (204) from a side of the first substrate (201) to lift-off the micro-LED array(204) from the first substrate (201). According to an embodiment, the performance of a micro-LED device may be improved.

公开(公告)号：WO2017206148A1

公开(公告)日：2017-12-07

申请号：PCT/CN2016/084543

申请日：2016-06-02

Applicant: GOERTEK.INC

Inventor： ZOU, Quanbo

IPC: H01L27/14 ,  G01P15/093 ,  G01N21/64

CPC classification number: G01N21/255 ,  G01N21/05 ,  G01N21/64 ,  G01N21/7703 ,  G01N2021/0346 ,  G01N2201/062 ,  G01N2201/0626

Abstract: The present invention discloses a monolithic integration device and micro Total Analysis System. The monolithic integration device for sensing comprises: a micro-LED; an optical detector; and a sensing channel, wherein the micro-LED is coupled with the sensing channel and is configured for emitting light into the sensing channel, and the optical detector is coupled with the sensing channel and is configured for sensing the light which is emitted by the micro-LED and travels through at least one part of the sensing channel. An embodiment of this invention proposes a new monolithic integration device for sensing with built-in light source and optical detection system.

Abstract translation: 本发明公开了一种单片集成装置和微全分析系统。 用于感测的单片集成装置包括：微型LED; 一个光学检测器; 以及一感测通道，其中该微型发光二极管耦接于该感测通道，且用以发射光线进入该感测通道，且该光学检测器耦接于该感测通道，且用以感测该微型发射光源 -LED并且穿过至少一部分感测通道。 本发明的一个实施例提出了一种用于利用内置光源和光学检测系统进行感测的新型单片集成装置。

公开(公告)号：WO2017066921A1

公开(公告)日：2017-04-27

申请号：PCT/CN2015/092313

申请日：2015-10-20

Applicant: GOERTEK.INC

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L33/08

CPC classification number: H01L25/0753 ,  B81C3/001 ,  H01L21/673 ,  H01L21/67781 ,  H01L33/0079 ,  H01L2224/95

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronics apparatus of micro-LED. The method for transferring micro-LED at wafer level comprises: temporarily bonding micro-LEDs on a laser-transparent original substrate onto a carrier substrate via a first bonding layer; irradiating the original substrate with laser, to lift-off selected micro-LESs; performing a partial release on the first bonding layer, to transfer the selected micro-LEDs to the carrier substrate; temporarily bonding the micro-LEDs on the carrier substrate onto a transfer head substrate via a second bonding layer; performing a full release on the first bonding layer, to transfer the micro-LEDs to the transfer head substrate; bonding the micro-LEDs on the transfer head substrate onto a receiving substrate; and removing the transfer head substrate by releasing the second bonding layer, to transfer the micro-LEDs to the receiving substrate.

Abstract translation: 本发明公开了一种微型LED的传输方法，制造方法，装置和电子设备。 在晶圆级上传输微型LED的方法包括：通过第一接合层将激光透明的原始衬底上的微型LED暂时接合到载体衬底上; 用激光照射原始衬底，剥离选定的微型LES; 在所述第一键合层上执行部分释放，以将所选择的微型LED转移到所述载体基板; 通过第二键合层将载体衬底上的微型LED暂时键合到转移头衬底上; 在所述第一结合层上执行完全释放，以将所述微型LED传输到所述传输头基板; 将转移头基板上的微型LED结合到接收基板上; 通过释放第二键合层去除转移头基板，将微型LED转移到接收基板。

公开(公告)号：WO2017066934A1

公开(公告)日：2017-04-27

申请号：PCT/CN2015/092406

申请日：2015-10-21

Applicant: GOERTEK.INC

Inventor： ZOU, Quanbo ,  WANG, Zhe ,  LI, Jun

IPC: H04R17/00

CPC classification number: H04R17/00 ,  H04R31/00 ,  H04R2201/003 ,  H04R2201/401 ,  H04R2307/025 ,  H04R2499/11 ,  H04R2499/15

Abstract: The present invention discloses a micro-speaker, the manufacturing method thereof, a speaker device and an electronic apparatus. The micro-speaker includes: a case, wherein the case has an opening; and a piezoelectric layer, wherein one or more electrodes are provided on the piezoelectric layer, wherein the piezoelectric layer is pre-buckled in its rest position, wherein the piezoelectric layer covers the opening and is bonded onto the case, to form a speaker rear cavity together with the case. The micro-speaker of the present invention has a relatively low speaker profile.

Abstract translation: 本发明公开了一种微型扬声器及其制造方法，扬声器装置和电子设备。 微型扬声器包括：壳体，其中壳体具有开口; 以及压电层，其中，所述压电层上设置有一个或多个电极，其中，所述压电层在其静止位置预先屈曲，其中，所述压电层覆盖所述开口并粘合到所述外壳上，以形成扬声器后腔 连同案件。 本发明的微型扬声器具有相对较低的扬声器轮廓。

公开(公告)号：WO2017028207A1

公开(公告)日：2017-02-23

申请号：PCT/CN2015/087415

申请日：2015-08-18

Applicant: GOERTEK.INC

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L33/00 ,  H01L27/15

CPC classification number: H01L21/67144 ,  H01L24/83 ,  H01L24/95 ,  H01L27/15 ,  H01L33/0095 ,  H01L33/405 ,  H01L2924/12042

Abstract: A pre-screening method, manufacturing method, device and electronic apparatus of micro-LED. The method for pre-screening defect micro-LEDs comprises: obtaining a defect pattern of defect micro-LEDs on a laser-transparent substrate (S6100); and irradiating the laser-transparent substrate with laser from the laser-transparent substrate side in accordance with the defect pattern (S6200), to lift-off the defect micro-LEDs from the laser-transparent substrate.

Abstract translation: 微型LED的预筛选方法，制造方法，装置和电子装置。 用于预筛选缺陷微型LED的方法包括：在激光透明基板上获得缺陷微型LED的缺陷图案（S6100）; 并根据缺陷图案从激光透明基板侧照射激光透明基板（S6200），以从激光透明基板剥离缺陷微型LED。

公开(公告)号：WO2016183844A1

公开(公告)日：2016-11-24

申请号：PCT/CN2015/079507

申请日：2015-05-21

Applicant: GOERTEK.INC

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L33/48 ,  H01L33/00

CPC classification number: H01L24/97 ,  H01L24/00 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/81005 ,  H01L2224/81143 ,  H01L2224/81815 ,  H01L2224/83005 ,  H01L2224/83143 ,  H01L2224/83851 ,  H01L2224/95001 ,  H01L2224/95144 ,  H01L2224/95145 ,  H01L2924/12041 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: A transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED, comprises: forming micro-LEDs(202) on a laser-transparent original substrate(201), providing an anisotropic conductive layer(203) on a receiving substrate(204), bringing the micro-LEDs(202) into contact with the anisotropic conductive layer(203) on the receiving substrate(204), irradiating the original substrate(201) with laser from the original substrate side to lift-off the micro-LEDs(202) from the original substrate(201), and processing the anisotropic conductive layer(203), to electrically connect the micro-LEDs(202) with the pads(205`) on the receiving substrate(204).

Abstract translation: 微型LED的转印方法，制造方法，装置和电子装置。 用于转移微型LED的方法包括：在激光透明的原始衬底（201）上形成微型LED（202），在接收衬底（204）上提供各向异性导电层（203），使微型LED（ 202）与接收基板（204）上的各向异性导电层（203）接触，用原始基板侧的激光照射原始基板（201），以从原始基板（...）剥离微型LED（202） 201），并且处理各向异性导电层（203）以将微型LED（202）与接收衬底（204）上的焊盘（205）电连接。

公开(公告)号：WO2016154956A1

公开(公告)日：2016-10-06

申请号：PCT/CN2015/075642

申请日：2015-04-01

Applicant: GOERTEK.INC

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L33/36

CPC classification number: H01L25/0753 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/62 ,  H01L2933/0066

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED comprises: forming a micro-LED on a laser-transparent original substrate; bringing the micro-LED into contact with a pad preset on a receiving substrate; and irradiating the original substrate with laser from the original substrate side to lift-off the micro-LED from the original substrate.

Abstract translation: 本发明公开了一种微型LED的转印方法，制造方法，装置和电子装置。 微型LED的转移方法包括：在激光透明的原始基板上形成微型LED; 使微型LED与预置在接收基板上的焊盘接触; 并用原始衬底侧的激光照射原始衬底，以从原始衬底剥离微型LED。

公开(公告)号：EP3316596A1

公开(公告)日：2018-05-02

申请号：EP15897026.9

申请日：2015-12-08

Applicant: GOERTEK.INC

Inventor： DONG, Wenqiang ,  XING, Mingxing

IPC: H04R9/06 ,  H04R9/02

CPC classification number: H04R1/025 ,  H04R1/02 ,  H04R7/12 ,  H04R7/18 ,  H04R9/025 ,  H04R9/06 ,  H04R2209/022 ,  H04R2400/11 ,  H04R2499/11 ,  H05K9/0075

Abstract: The present invention discloses a speaker structure, including a vibration assembly, a magnetic circuit system, a speaker housing and shields, wherein the speaker housing is configured to carry the vibration assembly and the magnetic circuit system; the shields are disposed on the speaker housing; the shields are made of a magnetically conductive material to form a magnetic shield surrounding the speaker structure; and the shield may be embedded inside the speaker housing and/or mounted on an outer surface of the speaker housing. The speaker structure provided by the present invention can effectively prevent a magnetic flux leakage phenomenon without affecting its sound performance; and meanwhile, the shields do not additionally occupy a space inside an electronic device where it is mounted.

Abstract translation: 本发明公开了一种扬声器结构，包括振动组件，磁路系统，扬声器壳体和屏蔽罩，其中扬声器壳体构造成承载振动组件和磁路系统; 屏蔽件设置在扬声器壳体上; 屏蔽由导磁材料制成以形成围绕扬声器结构的磁屏蔽; 并且屏蔽件可以嵌入扬声器壳体内部和/或安装在扬声器壳体的外表面上。 本发明提供的扬声器结构能够有效地防止漏磁现象而不影响其声音性能; 同时，屏蔽罩不会额外占据安装电子设备的内部空间。