公开(公告)号：WO2006071556A3

公开(公告)日：2006-07-06

申请号：PCT/US2005/045541

申请日：2005-12-15

Applicant: LAM RESEARCH CORPORATION ,  MAGNI, Enrico ,  KELLY, Michael ,  HEFTY, Robert ,  LUPAN, Michelle

Inventor： MAGNI, Enrico ,  KELLY, Michael ,  HEFTY, Robert ,  LUPAN, Michelle

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

Abstract: Methods for removing black silicon or black silicon carbide from a plasma-exposed surface of an upper electrode of a plasma processing chamber are provided. The methods include forming a plasma using a gas composition containing a fluorine-containing gas, and removing the black silicon or black silicon carbide from the surface with the plasma. The methods can also remove black silicon or black silicon carbide from surfaces of the components in the chamber in addition to the upper electrode.

公开(公告)号：WO2008121656A1

公开(公告)日：2008-10-09

申请号：PCT/US2008/058319

申请日：2008-03-26

Applicant: LAM RESEARCH CORPORATION ,  HUANG, Chung-Ho ,  HEFTY, Robert ,  LUI, Andrew ,  HUMBIRD, Dave ,  POTTER, Charles

Inventor： HUANG, Chung-Ho ,  HEFTY, Robert ,  LUI, Andrew ,  HUMBIRD, Dave ,  POTTER, Charles

IPC: H01L21/3065

CPC classification number: G05B19/41875 ,  G05B2219/31443 ,  G05B2219/32007 ,  G05B2219/32097 ,  G05B2219/45031 ,  H01L21/67276 ,  Y02P90/20 ,  Y02P90/22 ,  Y10S715/961

Abstract: A computer-implemented method for performing recipe evaluation is provided. The computer-implemented method includes integrating a plurality of data sources into a single recipe report card framework. The recipe report card framework includes an editor for interacting with the plurality of data sources. The computer-implemented method also includes displaying a plurality of graphical displays. Each graphical display of the plurality of graphical displays is configured to present a signal parameter of a set of signal parameters for at least a substrate. The computer-implemented method further includes providing a plurality of criteria for each of the set of signal parameters. The computer-implemented method yet also includes providing a plurality of ranges for the each of the set of signal parameters. The computer-implemented method yet further includes providing an expert guide, which is configured to provide guidance in analyzing a recipe.

Abstract translation: 提供了一种用于执行配方评估的计算机实现的方法。 计算机实现的方法包括将多个数据源集成到单个配方报告卡框架中。 配方报告卡框架包括用于与多个数据源交互的编辑器。 计算机实现的方法还包括显示多个图形显示。 多个图形显示器的每个图形显示被配置为呈现用于至少一个基板的一组信号参数的信号参数。 计算机实现的方法还包括为该组信号参数中的每一个提供多个标准。 计算机实现的方法还包括为该组信号参数中的每一个提供多个范围。 计算机实现的方法还包括提供专家指南，其被配置为在分析食谱时提供指导。

公开(公告)号：WO2006049954A3

公开(公告)日：2006-05-11

申请号：PCT/US2005/038373

申请日：2005-10-26

Applicant: LAM RESEARCH CORPORATION ,  CHEN, Wan-lin ,  TAKESHITA, Kenji ,  ASO, Tsuyoshi ,  KAWAGUCHI, Seiji ,  MCCLARD, Thomas ,  MAGNI, Enrico ,  KELLY, Michael ,  LUPAN, Michelle ,  HEFTY, Robert

Inventor： CHEN, Wan-lin ,  TAKESHITA, Kenji ,  ASO, Tsuyoshi ,  KAWAGUCHI, Seiji ,  MCCLARD, Thomas ,  MAGNI, Enrico ,  KELLY, Michael ,  LUPAN, Michelle ,  HEFTY, Robert

IPC: H01L21/302

Abstract: Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.

公开(公告)号：WO2007008509A2

公开(公告)日：2007-01-18

申请号：PCT/US2006/026095

申请日：2006-07-05

Applicant: LAM RESEARCH CORPORATION ,  LARSON, Dean, J. ,  HEFTY, Robert, C. ,  TIETZ, James, V. ,  KENNEDY, William, S. ,  LENZ, Eric, H. ,  DENTY, William, M., Jr. ,  MAGNI, Enrico

Inventor： LARSON, Dean, J. ,  HEFTY, Robert, C. ,  TIETZ, James, V. ,  KENNEDY, William, S. ,  LENZ, Eric, H. ,  DENTY, William, M., Jr. ,  MAGNI, Enrico

IPC: G01F25/00

CPC classification number: G01F1/42 ,  G01F1/36 ,  G01F25/0007 ,  G05D7/0652

Abstract: ABSTRACT OF THE DISCLOSURE Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice. In this method, any flow controller set point can be flowed at any time and at any chamber condition, such as during plasma processing operations. Gas supply systems are also disclosed.

Abstract translation: 本发明摘要提供了在向等离子体处理室供给气体的气体供给系统中测定气体流量的方法。 在差分流动方法中，流量控制器以不同的设定流量运行，并且在环境条件下测量设定流量的上游孔口压力。 测量的孔口压力参考二次流量验证方法，该方法为不同的设定流量产生相应的实际气体流速。 上游孔压力可以用作在室的任何温度条件下进行的随后的孔口压力测量的差分比较。 在绝对流动方法中，预定了所选择的气体和孔口的一些参数，并且在气体以流量控制器以设定流量通过孔口流动时，测量气体的其它参数。 在该方法中，任何流量控制器设定点可以在任何时间和任何室条件下流动，例如在等离子体处理操作期间。 还公开了供气系统。

公开(公告)号：WO2006071556A2

公开(公告)日：2006-07-06

申请号：PCT/US2005045541

申请日：2005-12-15

Applicant: LAM RES CORP ,  MAGNI ENRICO ,  KELLY MICHAEL ,  HEFTY ROBERT ,  LUPAN MICHELLE

Inventor： MAGNI ENRICO ,  KELLY MICHAEL ,  HEFTY ROBERT ,  LUPAN MICHELLE

IPC: C23F1/00 ,  B44C1/22 ,  C03C25/68 ,  C23F3/00

CPC classification number: B08B7/0035 ,  H01J37/32 ,  H01J37/32862

Abstract: Methods for removing black silicon or black silicon carbide from a plasma-exposed surface of an upper electrode of a plasma processing chamber are provided. The methods include forming a plasma using a gas composition containing a fluorine-containing gas, and removing the black silicon or black silicon carbide from the surface with the plasma. The methods can also remove black silicon or black silicon carbide from surfaces of the components in the chamber in addition to the upper electrode.

Abstract translation: 提供了从等离子体处理室的上电极的等离子体暴露表面去除黑色硅或黑色碳化硅的方法。 所述方法包括使用含有含氟气体的气体组合物形成等离子体，并用等离子体从表面除去黑色硅或黑色碳化硅。 除了上电极之外，这些方法还可以从室中的部件的表面除去黑色硅或黑色碳化硅。

公开(公告)号：WO2006049954A2

公开(公告)日：2006-05-11

申请号：PCT/US2005038373

申请日：2005-10-26

Applicant: LAM RES CORP ,  CHEN WAN-LIN ,  TAKESHITA KENJI ,  ASO TSUYOSHI ,  KAWAGUCHI SEIJI ,  MCCLARD THOMAS ,  MAGNI ENRICO ,  KELLY MICHAEL ,  LUPAN MICHELLE ,  HEFTY ROBERT

Inventor： CHEN WAN-LIN ,  TAKESHITA KENJI ,  ASO TSUYOSHI ,  KAWAGUCHI SEIJI ,  MCCLARD THOMAS ,  MAGNI ENRICO ,  KELLY MICHAEL ,  LUPAN MICHELLE ,  HEFTY ROBERT

IPC: B44C1/22 ,  B08B6/00 ,  H01L21/311

CPC classification number: B08B7/0035 ,  B05D1/62 ,  H01J37/32559 ,  H01L21/31116

Abstract: Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.

Abstract translation: 提供了在等离子体处理室的硅或碳化硅电极上形成保护性聚合物涂层的方法。 相对于暴露于等离子体和气态反应物的组分，聚合物涂层为电极的下表面提供保护。 可以在清洁室的过程中或在用于蚀刻室中的半导体衬底的工艺期间执行这些方法。

公开(公告)号：WO2010117964A3

公开(公告)日：2011-01-13

申请号：PCT/US2010030008

申请日：2010-04-05

Applicant: LAM RES CORP ,  JI BING ,  TAKESHITA KENJI ,  BAILEY ANDREW D III ,  HUDSON ERIC A ,  MORAVEJ MARYAM ,  SIRARD STEPHEN M ,  KO JUNGMIN ,  LE DANIEL ,  HEFTY ROBERT C ,  CHENG YU ,  DELGADINO GERARDO A ,  YEN BI-MING

Inventor： JI BING ,  TAKESHITA KENJI ,  BAILEY ANDREW D III ,  HUDSON ERIC A ,  MORAVEJ MARYAM ,  SIRARD STEPHEN M ,  KO JUNGMIN ,  LE DANIEL ,  HEFTY ROBERT C ,  CHENG YU ,  DELGADINO GERARDO A ,  YEN BI-MING

IPC: H01L21/3065 ,  H05H1/34

CPC classification number: H01L21/31116 ,  H01L21/02063 ,  H01L21/31138

Abstract: A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.

Abstract translation: 通过本发明的实施例提供了一种用于蚀刻位于有机掩模下方的低k电介质层中的特征的方法。 通过有机掩模将特征蚀刻到低k电介质层中。 在低k电介质层上沉积氟碳层。 氟碳层被固化。 剥去有机面膜。

公开(公告)号：WO2007008509A3

公开(公告)日：2009-04-23

申请号：PCT/US2006026095

申请日：2006-07-05

Applicant: LAM RES CORP ,  LARSON DEAN J ,  HEFTY ROBERT C ,  TIETZ JAMES V ,  KENNEDY WILLIAM S ,  LENZ ERIC H ,  DENTY WILLIAM M JR ,  MAGNI ENRICO

Inventor： LARSON DEAN J ,  HEFTY ROBERT C ,  TIETZ JAMES V ,  KENNEDY WILLIAM S ,  LENZ ERIC H ,  DENTY WILLIAM M JR ,  MAGNI ENRICO

IPC: G01F25/00

CPC classification number: G01F1/42 ,  G01F1/36 ,  G01F25/0007 ,  G05D7/0652

Abstract: Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber (12) are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice.

Abstract translation: 提供了一种测量用于向等离子体处理室（12）供应气体的气体供应系统中的气体流量的方法。 在差分流动方法中，流量控制器以不同的设定流量运行，并且在环境条件下测量设定流量的上游孔口压力。 测量的孔口压力参考二次流量验证方法，该方法为不同的设定流量产生相应的实际气体流速。 上游孔压力可以用作在室的任何温度条件下进行的随后的孔口压力测量的差分比较。 在绝对流动方法中，预定了所选择的气体和孔口的一些参数，并且在气体以流量控制器以设定流量通过孔口流动时，测量气体的其它参数。

公开(公告)号：WO2010117964A2

公开(公告)日：2010-10-14

申请号：PCT/US2010/030008

申请日：2010-04-05

Applicant: LAM RESEARCH CORPORATION ,  JI, Bing ,  TAKESHITA, Kenji ,  BAILEY, Andrew D., III ,  HUDSON, Eric A. ,  MORAVEJ, Maryam ,  SIRARD, Stephen M. ,  KO, Jungmin ,  LE, Daniel ,  HEFTY, Robert C. ,  CHENG, Yu ,  DELGADINO, Gerardo A. ,  YEN, Bi-Ming

Inventor： JI, Bing ,  TAKESHITA, Kenji ,  BAILEY, Andrew D., III ,  HUDSON, Eric A. ,  MORAVEJ, Maryam ,  SIRARD, Stephen M. ,  KO, Jungmin ,  LE, Daniel ,  HEFTY, Robert C. ,  CHENG, Yu ,  DELGADINO, Gerardo A. ,  YEN, Bi-Ming

IPC: H01L21/3065 ,  H05H1/34

CPC classification number: H01L21/31116 ,  H01L21/02063 ,  H01L21/31138

Abstract: A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.

Abstract translation: 通过本发明的实施例提供了一种用于蚀刻位于有机掩模下方的低k电介质层中的特征的方法。 通过有机掩模将特征蚀刻到低k电介质层中。 在低k电介质层上沉积氟碳层。 氟碳层被固化。 剥去有机面膜。