公开(公告)号：WO2011025800A3

公开(公告)日：2011-04-21

申请号：PCT/US2010046568

申请日：2010-08-25

Applicant: GLOBALFOUNDRIES INC ,  BEYER SVEN ,  CARTER RICK ,  HELLMICH ANDREAS ,  REIMER BERTHOLD

Inventor： BEYER SVEN ,  CARTER RICK ,  HELLMICH ANDREAS ,  REIMER BERTHOLD

IPC: H01L21/28

CPC classification number: H01L21/28247 ,  H01L21/0206 ,  H01L21/02244 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/7848

Abstract: In semiconductor devices, integrity of a titanium nitride material (152) may be increased by exposing the material to an oxygen plasma (110) after forming a thin silicon nitride -based material. The oxygen plasma (110) may result in an additional passivation of any minute surface portions which may not be appropriately covered by the silicon nitride-based material. Consequently, efficient cleaning recipes, such as cleaning processes (111) based on SPM, may be performed after the additional passivation without undue material loss of the titanium nitride material (152). In this manner, sophisticated high-k metal gate stacks may be formed with a very thin protective liner material on the basis of efficient cleaning processes without unduly contributing to a pronounced yield loss in an early manufacturing stage.

Abstract translation: 在半导体器件中，氮化钛材料（152）的完整性可以通过在形成薄的氮化硅基材料之后将材料暴露于氧等离子体（110）而增加。 氧等离子体（110）可能导致任何微小表面部分的附加钝化，这些微小表面部分可能不被氮化硅基材料适当地覆盖。 因此，可以在附加钝化之后进行有效的清洁配方，例如基于SPM的清洁过程（111），而不会导致氮化钛材料（152）的不必要的材料损失。 以这种方式，可以在有效的清洁过程的基础上形成具有非常薄的保护衬垫材料的复杂的高k金属栅极堆叠，而不会在早期制造阶段中过度地造成显着的产量损失。

公开(公告)号：WO2011025800A2

公开(公告)日：2011-03-03

申请号：PCT/US2010/046568

申请日：2010-08-25

Applicant: GLOBALFOUNDRIES INC. ,  BEYER, Sven ,  CARTER, Rick ,  HELLMICH, Andreas ,  REIMER, Berthold

Inventor： BEYER, Sven ,  CARTER, Rick ,  HELLMICH, Andreas ,  REIMER, Berthold

IPC: H01L21/28

CPC classification number: H01L21/28247 ,  H01L21/0206 ,  H01L21/02244 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/7848

Abstract: In semiconductor devices, integrity of a titanium nitride material (152) may be increased by exposing the material to an oxygen plasma (110) after forming a thin silicon nitride -based material. The oxygen plasma (110) may result in an additional passivation of any minute surface portions which may not be appropriately covered by the silicon nitride-based material. Consequently, efficient cleaning recipes, such as cleaning processes (111) based on SPM, may be performed after the additional passivation without undue material loss of the titanium nitride material (152). In this manner, sophisticated high-k metal gate stacks may be formed with a very thin protective liner material on the basis of efficient cleaning processes without unduly contributing to a pronounced yield loss in an early manufacturing stage.

Abstract translation: 在半导体器件中，在形成基于氮化硅的薄基材料之后，通过将材料暴露于氧等离子体（110）可以增加氮化钛材料（152）的完整性。 氧等离子体（110）可导致任何可能未被氮化硅基材料适当覆盖的微小表面部分的附加钝化。 因此，有效的清洁配方，例如基于SPM的清洁工艺（111），可以在附加钝化之后进行，而不会过度损失氮化钛材料（152）。 以这种方式，基于高效清洁工艺，可以用非常薄的保护性内衬材料形成精密的高k金属栅极叠层，而不会过度地促成早期制造阶段的明显的良率损失。