公开(公告)号：EP3183802A2

公开(公告)日：2017-06-28

申请号：EP15759996.0

申请日：2015-08-20

Applicant: Mcgowan, John Lewis ,  Holmes, Steven K.

Inventor： Mcgowan, John Lewis ,  Holmes, Steven K.

IPC: H02K49/04 ,  B61H7/08 ,  B60L7/28

CPC classification number: B60L7/28 ,  A62B1/08 ,  B60T7/128 ,  B60T13/748 ,  B61B3/00 ,  B61H7/083 ,  F16D63/002 ,  F16D63/008 ,  H02K49/046 ,  H02K2213/09 ,  Y02T10/641

Abstract: An apparatus has a first truck that includes a frame. A roller is rotatably attached to the frame and a lever arm is pivotably connected to the frame. The lever arm includes a load point, a magnet, and a non-ferrous conductive material. A biasing element biases the lever arm into a first angular position. A load applied to the load point drives the lever arm against a biasing force of the biasing element, and towards a second angular position.

Abstract translation: 一种设备具有其上设置有第一元件的磁制动系统的第一部分。 第一部分围绕轴线旋转。 第一个元素的位置与轴的距离是固定的。 磁制动系统的第二部分具有设置在其上的第二元件。 弹簧使可旋转的第一部分偏离第二部分第一距离。 在对其中一个部分施加力时，可旋转的第一部分到第二部分的相对位置被减小到小于第一距离的第二距离。

公开(公告)号：EP3183039A1

公开(公告)日：2017-06-28

申请号：EP15759997.8

申请日：2015-08-20

Applicant: Mcgowan, John Lewis ,  Holmes, Steven K.

Inventor： Mcgowan, John Lewis ,  Holmes, Steven K.

IPC: A62B1/08 ,  H02K49/04

CPC classification number: B60L7/28 ,  A62B1/08 ,  B60T7/128 ,  B60T13/748 ,  B61B3/00 ,  B61H7/083 ,  F16D63/002 ,  F16D63/008 ,  H02K49/046 ,  H02K2213/09 ,  Y02T10/641

Abstract: An apparatus has a first portion of a magnetic braking system with a first element disposed thereon. The first portion rotates about an axis. The position of the first element is a fixed distance from the axis. A second portion of the magnetic braking system has a second element disposed thereon. A spring biases the rotatable first portion a first distance from the second portion. Upon application of a force to one of the portions, the relative position of the rotatable first portion to the second portion is reduced to a second distance less than the first distance.

Abstract translation: 一种设备具有其上设置有第一元件的磁制动系统的第一部分。 第一部分围绕轴线旋转。 第一个元素的位置与轴的距离是固定的。 磁制动系统的第二部分具有设置在其上的第二元件。 弹簧使可旋转的第一部分偏离第二部分第一距离。 在对其中一个部分施加力时，可旋转的第一部分到第二部分的相对位置被减小到小于第一距离的第二距离。

公开(公告)号：GB9209611D0

公开(公告)日：1992-06-17

申请号：GB9209611

申请日：1992-05-05

Applicant: HOLMES STEVEN J

公开(公告)号：GB9821731D0

公开(公告)日：1998-12-02

申请号：GB9821731

申请日：1998-10-07

Applicant: HOLMES STEVEN W

公开(公告)号：GB9712724D0

公开(公告)日：1997-08-20

申请号：GB9712724

申请日：1997-06-18

Applicant: HOLMES STEVEN ,  WRIGHT DAVID J

IPC: A63F13/00 ,  A63F13/12 ,  G06T17/40 ,  H04N5/44 ,  H04N7/16

公开(公告)号：WO2013023124A2

公开(公告)日：2013-02-14

申请号：PCT/US2012/050267

申请日：2012-08-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CHEN, Kuang-jung ,  HOLMES, Steven, J. ,  HUANG, Wu-song ,  LIU, Sen

Inventor： CHEN, Kuang-jung ,  HOLMES, Steven, J. ,  HUANG, Wu-song ,  LIU, Sen

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/09 ,  C09D133/04

CPC classification number: G03F7/0382 ,  C09J133/14 ,  G03F7/091 ,  G03F7/094 ,  G03F7/095

Abstract: A negative developable bottom antireflective coating (NDBARC) material includes a polymer containing an aliphatic alcohol moiety, an aromatic moiety, and a carboxylic acid moiety. The NDBARC composition is insoluble in a typical resist solvent such as propylene glycol methyl ether acetate (PGMEA) after coating and baking. The NDBARC material also includes a photoacid generator, and optionally a crosslinking compound. In the NDBARC material, the carboxylic acid provides the developer solubility, while the alcohol alone, the carboxylic acid alone, or their combination provides the PGMEA resistance. The NDBARC material has resistance to the resist solvent, and thus, intermixing does not occur between NDBARC and resist during resist coating over NDBARC. After exposure and bake, the lithographically exposed portions of both the negative photoresist (30E) and the NDBARC layer (20E) become insoluble in developer due to the chemically amplified crosslinking of the polymers in negative resist and NDBARC layer in the lithographically exposed portions.

Abstract translation: 负显影底部抗反射涂层（NDBARC）材料包括含有脂族醇部分，芳族部分和羧酸部分的聚合物。 在涂布和烘烤后，NDBARC组合物不溶于典型的抗蚀剂溶剂如丙二醇甲基醚乙酸酯（PGMEA）中。 NDBARC材料还包括光酸产生剂和任选的交联化合物。 在NDBARC材料中，羧酸提供显影剂溶解性，而单独的醇，单独的羧酸或其组合提供PGMEA抗性。 NDBARC材料对抗蚀剂溶剂具有抗性，因此在NDBARC上抗蚀剂涂覆期间NDBARC和抗蚀剂之间不会发生混合。 在曝光和烘烤之后，由于光刻曝光部分中的负抗蚀剂和NDBARC层中的聚合物的化学放大交联，负光刻胶（30E）和NDBARC层（20E）的光刻曝光部分变得不溶于显影剂。 / p>

公开(公告)号：WO2008128897A2

公开(公告)日：2008-10-30

申请号：PCT/EP2008054306

申请日：2008-04-09

Applicant: IBM ,  IBM UK ,  CANNON ETHAN HARRISON ,  FURUKAWA TOSHIHARU ,  GAUDIELLO JOHN GERARD ,  HAKEY MARK CHARLES ,  HOLMES STEVEN JOHN ,  HORAK DAVID VACLAV ,  KOBURGER III CHARLES WILLIAM ,  MANDELMAN JACK ALLAN ,  TONTI WILLIAM ROBERT

Inventor： CANNON ETHAN HARRISON ,  FURUKAWA TOSHIHARU ,  GAUDIELLO JOHN GERARD ,  HAKEY MARK CHARLES ,  HOLMES STEVEN JOHN ,  HORAK DAVID VACLAV ,  KOBURGER III CHARLES WILLIAM ,  MANDELMAN JACK ALLAN ,  TONTI WILLIAM ROBERT

CPC classification number: H01L21/76264

Abstract: Hybrid substrates characterized by semiconductor islands of different crystal orientations and methods of forming such hybrid substrates. The methods involve using a SIMOX process to form an insulating layer. The insulating layer may divide the islands of at least one of the different crystal orientations into mutually aligned device and body regions. The body regions may be electrically floating relative to the device regions.

Abstract translation: 以不同晶体取向的半导体岛为特征的混合衬底以及形成这种混合衬底的方法。 这些方法涉及使用SIMOX工艺来形成绝缘层。 绝缘层可以将不同晶体取向中的至少一个的岛分成相互对准的器件区和体区。 本体区域可以相对于器件区域电浮动。

公开(公告)号：WO2007051716A1

公开(公告)日：2007-05-10

申请号：PCT/EP2006/067580

申请日：2006-10-19

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  IBM UNITED KINGDOM LIMITED ,  HORAK, David, Vaclav ,  HAKEY, Mark, Charles ,  HOLMES, Steven, John ,  FURUKAWA, Toshiharu ,  KOBURGER, Charles, William, III ,  TONTI, William, Robert

Inventor： HORAK, David, Vaclav ,  HAKEY, Mark, Charles ,  HOLMES, Steven, John ,  FURUKAWA, Toshiharu ,  KOBURGER, Charles, William, III ,  TONTI, William, Robert

IPC: H01L21/60 ,  H01L21/336

CPC classification number: H01L21/76897 ,  H01L21/28052 ,  H01L21/28061 ,  H01L21/28114

Abstract: A structure and a method for forming the same. The structure includes (a) a semiconductor layer including a channel region disposed between first and second S/D regions; (b) a gate dielectric region on the channel region; (c) a gate region on the gate dielectric region and electrically insulated from the channel region by the gate dielectric region; (d) a protection umbrella region on the gate region, wherein the protection umbrella region comprises a first dielectric material, and wherein the gate region is completely in a shadow of the protection umbrella region; and (e) a filled contact hole (i) directly above and electrically connected to the second S/D region and (ii) aligned with an edge of the protection umbrella region, wherein the contact hole is physically isolated from the gate region by an inter-level dielectric (ILD) layer which comprises a second dielectric material different from the first dielectric material.

Abstract translation: 一种结构及其形成方法。 该结构包括（a）包括设置在第一和第二S / D区之间的沟道区的半导体层; （b）沟道区上的栅介质区; （c）栅极电介质区域上的栅极区域，并且通过栅极电介质区域与沟道区域电绝缘; （d）栅极区域上的保护伞区域，其中保护伞区域包括第一介电材料，并且其中栅极区域完全处于保护伞区域的阴影中; 和（e）直接在第二S / D区域上方并电连接到第二S / D区域的填充接触孔（i）和（ii）与保护伞区域的边缘对准，其中接触孔通过一个 层间介电层（ILD）层，其包括不同于第一介电材料的第二电介质材料。

公开(公告)号：WO2006061318A1

公开(公告)日：2006-06-15

申请号：PCT/EP2005/056117

申请日：2005-11-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  IBM UNITED KINGDOM LIMITED ,  FURUKAWA, Toshiharu ,  HAKEY, Mark, Charles ,  HOLMES, Steven, John ,  HORAK, David, Vaclav ,  KOBURGER, III, Charles, William ,  MITCHELL, Peter

Inventor： FURUKAWA, Toshiharu ,  HAKEY, Mark, Charles ,  HOLMES, Steven, John ,  HORAK, David, Vaclav ,  KOBURGER, III, Charles, William ,  MITCHELL, Peter

IPC: H01L21/768 ,  H01L23/522

CPC classification number: B82Y10/00 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10S977/742 ,  Y10S977/842 ,  H01L2924/00

Abstract: A dielectric in an integrated circuit is formed by creating oriented cylindrical voids in a conventional dielectric material. Preferably, voids are formed by first forming multiple relatively long, thin carbon nanotubes perpendicular to a surface of an integrated circuit wafer, by depositing a conventional dielectric on the surface to fill the area between the carbon nanotubes, and by then removing the carbon nanotubes to produce voids in place of the carbon nanotubes. A layer of dielectric and voids thus formed can be patterned or otherwise processed using any of various conventional processes. The use of a conventional dielectric material having numerous air voids substantially reduces the dielectric constant, leaving a dielectric structure which is both structurally strong and can be constructed compatibly with conventional processes and materials.

Abstract translation: 集成电路中的电介质通过在常规电介质材料中产生取向的圆柱形空隙来形成。 优选地，通过首先通过在表面上沉积常规电介质以填充碳纳米管之间的区域，然后通过将碳纳米管去除以形成多个相对较长的薄碳纳米管，形成集成电路晶片的表面，形成空隙 产生代替碳纳米管的空隙。 可以使用各种常规方法中的任何一种来形成如此形成的电介质层和空隙层。 使用具有多个空气空隙的常规电介质材料基本上降低了介电常数，留下了在结构上很强并且可以与常规工艺和材料相容地构造的电介质结构。

公开(公告)号：WO2006010684A1

公开(公告)日：2006-02-02

申请号：PCT/EP2005/053002

申请日：2005-06-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  IBM UNITED KINGDOM LIMITED ,  FURUKAWA, Toshiharu ,  HAKEY, Mark, Charles ,  HOLMES, Steven, John ,  HORAK, David, Vaclav ,  KOBURGER, III, Charles, William ,  MITCHELL, Peter

Inventor： FURUKAWA, Toshiharu ,  HAKEY, Mark, Charles ,  HOLMES, Steven, John ,  HORAK, David, Vaclav ,  KOBURGER, III, Charles, William ,  MITCHELL, Peter

IPC: H01L51/30

CPC classification number: H01L21/7685 ,  B82Y10/00 ,  H01L21/32051 ,  H01L21/76838 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53276 ,  H01L51/0048 ,  H01L51/0052 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/778 ,  Y10S977/842 ,  H01L2924/00

Abstract: A conductive layer in an integrated circuit is formed as a sandwich having multiple sublayers, including at least one sublayer of oriented carbon nanotubes. The conductive layer sandwich preferably contains two sublayers of carbon nanotubes, in which the carbon nanotube orientation in one sublayer is substantially perpendicular to that of the other layer. The conductive layer sandwich preferably contains one or more additional sublayers of a conductive material, such as a metal. In one embodiment, oriented carbon nanotubes are created by forming a series of parallel surface ridges, covering the top and one side of the ridges with a catalyst inhibitor, and growing carbon nanotubes horizontally from the uncovered vertical sides of the ridges. In another embodiment, oriented carbon nanotubes are grown on the surface of a conductive material in the presence of a directional flow of reactant gases and a catalyst.

Abstract translation: 集成电路中的导电层形成为具有多个子层的夹层，包括至少一个定向碳纳米管子层。 导电层夹层优选包含两个碳纳米管子层，其中一个子层中的碳纳米管取向基本上垂直于另一层的碳纳米管取向。 导电层夹层优选地包含一种或多种另外的导电材料的子层，例如金属。 在一个实施方案中，通过形成一系列平行的表面脊，通过用催化剂抑制剂覆盖脊的顶部和一侧并从脊的未覆盖的垂直侧水平生长碳纳米管来产生定向碳纳米管。 在另一个实施方案中，定向碳纳米管在反应物气体和催化剂的定向流的存在下在导电材料的表面上生长。