公开(公告)号：WO2011112802A3

公开(公告)日：2012-01-05

申请号：PCT/US2011027881

申请日：2011-03-10

Applicant: APPLIED MATERIALS INC ,  GANGULY UDAYAN ,  RANISH JOSEPH M ,  HUNTER AARON M ,  TANG JING ,  OLSEN CHRISTOPHER S ,  SCOTNEY-CASTLE MATTHEW D ,  NGUYEN VICKY ,  SRINIVASAN SWAMINATHAN ,  LIU WEI ,  SWENBERG JOHANES F ,  SUN SHIYU

Inventor： GANGULY UDAYAN ,  RANISH JOSEPH M ,  HUNTER AARON M ,  TANG JING ,  OLSEN CHRISTOPHER S ,  SCOTNEY-CASTLE MATTHEW D ,  NGUYEN VICKY ,  SRINIVASAN SWAMINATHAN ,  LIU WEI ,  SWENBERG JOHANES F ,  SUN SHIYU

IPC: H01L21/3065

CPC classification number: H01L21/76232 ,  H01L21/0223 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68785 ,  H01L27/11521

Abstract: Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

Abstract translation: 本文描述了用于制造适用于窄间距应用的半导体器件的设备和方法及其制造方法。 公开了被配置为通过氧化材料层的表面以形成氧化物层来形成和/或成形材料层的各种单室; 通过蚀刻工艺去除至少一些氧化物层; 并且循环地重复氧化和去除过程直到材料层形成为期望的形状。 在一些实施例中，材料层可以是半导体器件的浮置栅极。

公开(公告)号：WO2010059701A3

公开(公告)日：2010-08-12

申请号：PCT/US2009064956

申请日：2009-11-18

Applicant: APPLIED MATERIALS INC ,  ADERHOLD WOLFGANG ,  JALLEPALLY RAVI ,  RAMACHANDRAN BALASUBRAMANIAN ,  HUNTER AARON M ,  ILIOPOULOS ILIAS

Inventor： ADERHOLD WOLFGANG ,  JALLEPALLY RAVI ,  RAMACHANDRAN BALASUBRAMANIAN ,  HUNTER AARON M ,  ILIOPOULOS ILIAS

IPC: H01L21/66 ,  H01L21/324

CPC classification number: G01J5/0003 ,  G01J5/0007 ,  G01J5/08 ,  G01J5/0846 ,  G01J2005/0081

Abstract: Methods and systems for determining a radial differential metrology profile of a substrate heated in a process chamber is provided. Methods and systems for determining an angular or azimuthal differential metrology profile of a rotating substrate in a processing chamber are also provided. The radial and azimuthal differential metrology profiles are applied to adjust a reference metrology profile to provide a virtual metrology of the process chamber. The virtual metrology is applied to control the performance of the process chamber.

Abstract translation: 提供了用于确定在处理室中加热的衬底的径向微分计量学轮廓的方法和系统。 还提供了用于确定处理室中的旋转衬底的角度或方位差分测量轮廓的方法和系统。 应用径向和方位差分计量分析来调整参考计量学概况，以提供处理室的虚拟计量。 应用虚拟计量来控制处理室的性能。

公开(公告)号：WO2010054076A3

公开(公告)日：2010-07-29

申请号：PCT/US2009063394

申请日：2009-11-05

Applicant: APPLIED MATERIALS INC ,  SORABJI KHURSHED ,  RANISH JOSEPH M ,  ADERHOLD WOLFGANG ,  HUNTER AARON M ,  KOELMEL BLAKE R ,  LERNER ALEXANDER N ,  MERRY NIR

Inventor： SORABJI KHURSHED ,  RANISH JOSEPH M ,  ADERHOLD WOLFGANG ,  HUNTER AARON M ,  KOELMEL BLAKE R ,  LERNER ALEXANDER N ,  MERRY NIR

IPC: H01L21/324 ,  H01L21/68 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01L21/67259 ,  C23C16/46 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/68 ,  H01L21/681 ,  H01L21/6835 ,  H01L21/68742

Abstract: Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.

Abstract translation: 描述了包括将衬底轴向对准衬底支撑件或经验确定的位置的用于快速热处理平面衬底的方法和装置。 所述方法和装置包括确定衬底和衬底支撑件的相对取向的传感器系统。

公开(公告)号：WO2010059701A2

公开(公告)日：2010-05-27

申请号：PCT/US2009/064956

申请日：2009-11-18

Applicant: APPLIED MATERIALS, INC. ,  ADERHOLD, Wolfgang ,  JALLEPALLY, Ravi ,  RAMACHANDRAN, Balasubramanian ,  HUNTER, Aaron M. ,  ILIOPOULOS, Ilias

Inventor： ADERHOLD, Wolfgang ,  JALLEPALLY, Ravi ,  RAMACHANDRAN, Balasubramanian ,  HUNTER, Aaron M. ,  ILIOPOULOS, Ilias

IPC: H01L21/66 ,  H01L21/324

CPC classification number: G01J5/0003 ,  G01J5/0007 ,  G01J5/08 ,  G01J5/0846 ,  G01J2005/0081

Abstract: Methods and systems for determining a radial differential metrology profile of a substrate heated in a process chamber is provided. Methods and systems for determining an angular or azimuthal differential metrology profile of a rotating substrate in a processing chamber are also provided. The radial and azimuthal differential metrology profiles are applied to adjust a reference metrology profile to provide a virtual metrology of the process chamber. The virtual metrology is applied to control the performance of the process chamber.

Abstract translation: 提供了用于确定在处理室中加热的衬底的径向差分度量分布的方法和系统。 还提供了用于确定处理室中的旋转衬底的角度或方位差分度量分布的方法和系统。 应用径向和方位差分度量分布图来调整参考度量分布图以提供处理室的虚拟度量。 虚拟计量被用于控制处理室的性能。

公开(公告)号：WO2010006156A2

公开(公告)日：2010-01-14

申请号：PCT/US2009/050085

申请日：2009-07-09

Applicant: APPLIED MATERIALS, INC. ,  SORABJI, Khurshed ,  RANISH, Joseph, M. ,  ADERHOLD, Wolfgang ,  HUNTER, Aaron, M. ,  LERNER, Alexander, N.

Inventor： SORABJI, Khurshed ,  RANISH, Joseph, M. ,  ADERHOLD, Wolfgang ,  HUNTER, Aaron, M. ,  LERNER, Alexander, N.

IPC: H01L21/324

CPC classification number: H01L21/67109 ,  C23C16/4404 ,  C23C16/45512 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/4584 ,  C23C16/481 ,  F27B17/0025 ,  H01L21/67098 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/67207

Abstract: Apparatus and methods for thermally processing a substrate are provided. A chamber containing a levitating support assembly configured to position the substrate at different distances from a plate during the heating and cooling of a substrate. In one embodiment a plurality of openings on the surface of the plate are configured to evenly distribute gas across a radial surface of the substrate. The distribution of gas may couple radiant energy not reflected back to the substrate during thermal processing with an absorptive region of the plate to begin the cooling of the substrate. The method and apparatus provided within allows for a controllable and effective means for thermally processing a substrate rapidly.

Abstract translation: 提供了用于热处理基板的设备和方法。 包含悬浮支撑组件的腔室，其构造成在衬底的加热和冷却期间将衬底定位在与板不同的距离处。 在一个实施例中，板的表面上的多个开口构造成均匀地分布气体穿过衬底的径向表面。 气体的分布可以在热处理期间将具有未反射回衬底的辐射能量与板的吸收区域耦合以开始冷却衬底。 所提供的方法和装置允许用于快速热处理基板的可控和有效的装置。

公开(公告)号：WO2009120729A1

公开(公告)日：2009-10-01

申请号：PCT/US2009/038156

申请日：2009-03-25

Applicant: APPLIED MATERIALS, INC. ,  SORABJI, Khurshed ,  LERNER, Alexander, N. ,  RANISH, Joseph, M. ,  HUNTER, Aaron, M. ,  ADAMS, Bruce, E. ,  BEHDJAT, Mehran ,  RAMANUJAM, Rajesh, S.

Inventor： SORABJI, Khurshed ,  LERNER, Alexander, N. ,  RANISH, Joseph, M. ,  HUNTER, Aaron, M. ,  ADAMS, Bruce, E. ,  BEHDJAT, Mehran ,  RAMANUJAM, Rajesh, S.

IPC: H01L21/324 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01L21/67109 ,  H01L21/67115 ,  H01L21/67248

Abstract: Apparatus and methods for achieving uniform heating or cooling of a substrate during a rapid thermal process are disclosed. More particularly, apparatus and methods for controlling the temperature of an edge ring supporting a substrate and/or a reflector plate during a rapid thermal process to improve temperature uniformity across the substrate are disclosed, which include a thermal mass or plate adjacent the edge ring to heat or cool the edge ring.

Abstract translation: 公开了用于在快速热处理期间实现基板的均匀加热或冷却的装置和方法。 更具体地，公开了用于在快速热处理期间控制支撑衬底和/或反射板的边缘环的温度以改善衬底上的温度均匀性的装置和方法，其包括邻近边缘环到 加热或冷却边缘环。

公开(公告)号：WO2012021464A3

公开(公告)日：2012-02-16

申请号：PCT/US2011/046987

申请日：2011-08-09

Applicant: APPLIED MATERIALS, INC. ,  KOELMEL, Blake R. ,  HUNTER, Aaron M. ,  LERNER, Alexander N.

Inventor： KOELMEL, Blake R. ,  HUNTER, Aaron M. ,  LERNER, Alexander N.

IPC: H01L21/324

Abstract: The present invention generally relates to methods and apparatus for processing substrates. Embodiments of the invention include apparatuses for processing a substrate comprising a ceramic reflector plate, which may be optically transparent. The reflector plate may include a reflective coating and be part of a reflector plate assembly in which the reflector plate is assembled to a baseplate.

公开(公告)号：WO2010025228A8

公开(公告)日：2011-04-07

申请号：PCT/US2009055162

申请日：2009-08-27

Applicant: APPLIED MATERIALS INC ,  HUNTER AARON M ,  LI JIPING ,  RAMANUJAM RAJESH S ,  HAW THOMAS

Inventor： HUNTER AARON M ,  LI JIPING ,  RAMANUJAM RAJESH S ,  HAW THOMAS

IPC: H01L21/324 ,  H01L21/66

CPC classification number: H01L21/67248 ,  H01L21/67115

Abstract: Embodiments of the invention are directed to methods and apparatus for rapid thermal processing of a substrate over an extended temperature range, including low temperatures. Systems and methods for using an extended temperature pyrometry system employing a transmitted radiation detector system are disclosed. Systems combining transmitted radiation detector systems and emitted radiation detector systems are also described.

Abstract translation: 本发明的实施例涉及用于在包括低温的扩展温度范围内快速热处理衬底的方法和装置。 公开了使用采用透射辐射探测器系统的扩展温度测温系统的系统和方法。 还描述了组合透射辐射检测器系统和发射的辐射探测器系统的系统。

公开(公告)号：WO2009137773A2

公开(公告)日：2009-11-12

申请号：PCT/US2009043305

申请日：2009-05-08

Applicant: APPLIED MATERIALS INC ,  RANISH JOSEPH M ,  SORABJI KHURSHED ,  LERNER ALEXANDER N ,  HUNTER AARON M

Inventor： RANISH JOSEPH M ,  SORABJI KHURSHED ,  LERNER ALEXANDER N ,  HUNTER AARON M

IPC: H01L21/324

CPC classification number: H01L21/324 ,  H01L21/67115 ,  H01L21/67248

Abstract: Methods and apparatus for hyperbaric rapid thermal processing of a substrate are described. Methods of processing a substrate in a rapid thermal processing chamber are described that include passing a substrate from outside the chamber through an access port onto a support in the interior region of the processing chamber, closing a port door sealing the chamber, pressurizing the chamber to a pressure greater than 1.5 atmospheres absolute and directing radiant energy toward the substrate. Hyperbaric rapid thermal processing chambers are described which are constructed to withstand pressures greater than at least about 1.5 atmospheres absolute or, optionally, 2 atmospheres of absolute pressure. Processing chambers may include pressure control valves to control the pressure within the chamber.

Abstract translation: 描述了用于衬底高压快速热处理的方法和装置。 描述了在快速热处理室中处理基板的方法，其包括将基板从室外通过进入端口传送到处理室的内部区域中的支撑件上，关闭密封该室的端口门，将该室加压至 绝对压力大于1.5个大气压，并将辐射能量引向基板。 描述了高压快速热处理室，其被构造为承受大于至少约1.5大气压绝对压力或任选地大气压绝压的压力。 处理室可以包括压力控制阀，以控制室内的压力。

公开(公告)号：WO2011112812A2

公开(公告)日：2011-09-15

申请号：PCT/US2011027900

申请日：2011-03-10

Applicant: APPLIED MATERIALS INC ,  GANGULY UDAYAN ,  RANISH JOSEPH M ,  HUNTER AARON M ,  TANG JING ,  OLSEN CHRISTOPHER S ,  SCOTNEY-CASTLE MATTHEW D ,  NGUYEN VICKY ,  SRINIVASAN SWAMINATHAN ,  SWENBERG JOHANES F ,  WANG ANCHUAN ,  INGLE NITIN K ,  HEMKAR MANISH ,  MARIN JOSE A

Inventor： GANGULY UDAYAN ,  RANISH JOSEPH M ,  HUNTER AARON M ,  TANG JING ,  OLSEN CHRISTOPHER S ,  SCOTNEY-CASTLE MATTHEW D ,  NGUYEN VICKY ,  SRINIVASAN SWAMINATHAN ,  SWENBERG JOHANES F ,  WANG ANCHUAN ,  INGLE NITIN K ,  HEMKAR MANISH ,  MARIN JOSE A

IPC: H01L21/3065

CPC classification number: H01L21/67115 ,  H01L21/0223 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76232 ,  H01L27/11521

Abstract: Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.